公开(公告)号：US20200004465A1

公开(公告)日：2020-01-02

申请号：US16566545

申请日：2019-09-10

申请人： Micron Technology, Inc.

发明人： Michael G. Miller ,  Kishore Kumar Muchherla ,  Harish Reddy Singidi ,  Sampath Ratnam ,  Renato Padilla, JR. ,  Gary F. Besinga ,  Peter Sean Feeley

IPC分类号： G06F3/06 ,  G11C16/10

摘要： Devices and techniques for correcting for power loss in NAND memory devices are disclosed herein. The NAND memory devices may comprise a number of physical pages. For example, a memory controller may detect a power loss indicator at the NAND flash memory. The memory controller may identify a last-written physical page and determine whether the last-written physical page comprises more than a threshold number of low-read-margin cells. If the last-written physical page comprises more than the threshold number of low-read-margin cells, the memory controller may provide a programming voltage to at least the low-read-margin cells.

公开(公告)号：US10446197B2

公开(公告)日：2019-10-15

申请号：US15692407

申请日：2017-08-31

申请人： Micron Technology, Inc.

发明人： Kishore Kumar Muchherla ,  Ashutosh Malshe ,  Harish Singidi ,  Gianni Stephen Alsasua ,  Gary F. Besinga ,  Sampath Ratnam ,  Peter Sean Feeley

IPC分类号： G11C7/00 ,  G11C7/10 ,  G11C8/10 ,  G11C29/02

摘要： A variety of applications can include apparatus and/or methods of operating the apparatus that include a memory device having read levels that can be calibrated. A calibration controller implemented with the memory device can trigger a read level calibration based on inputs from one or more trackers monitoring parameters associated with the memory device and a determination of an occurrence of at least one event from a set of events related to the monitored parameters. The monitored parameters can include parameters related to a selected time interval and measurements of read, erase, or write operations of the memory device. Additional apparatus, systems, and methods are disclosed.

公开(公告)号：US20190122705A1

公开(公告)日：2019-04-25

申请号：US16230251

申请日：2018-12-21

申请人： Micron Technology, Inc.

发明人： Kishore Kumar Muchherla ,  Ashutosh Malshe ,  Harish Reddy Singidi ,  Gianni Stephen Alsasua ,  Gary F. Besinga ,  Sampath Ratnam ,  Peter Sean Feeley

IPC分类号： G11C7/10 ,  G11C8/10

摘要： A variety of applications can include apparatus and/or methods of operating the apparatus that include a memory device having read levels that can be calibrated. A calibration controller implemented with the memory device can trigger a read level calibration based on inputs from one or more trackers monitoring parameters associated with the memory device and a determination of an occurrence of at least one event from a set of events related to the monitored parameters. The monitored parameters can include parameters related to a selected time interval and measurements of read, erase, or write operations of the memory device. Additional apparatus, systems, and methods are disclosed.