公开(公告)号：US20060067014A1

公开(公告)日：2006-03-30

申请号：US10954803

申请日：2004-09-29

申请人： James Freitag ,  Mustafa Pinarbasi

发明人： James Freitag ,  Mustafa Pinarbasi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3932

摘要： A magnetoresistive sensor having hard bias layers constructed of CoPtCrB, which high coercivity when deposited over crystalline materials such as an AFM layer or other sensor material. The bias layer material exhibits high coercivity and high moment even when deposited over a crystalline structure such as that of an underlying sensor material by not assuming the crystalline structure of the underlying crystalline layer. The bias layer material is especially beneficial for use in a partial mill sensor design wherein a portion of the sensor layers extends beyond the active area of the sensor and the bias layer must be deposited on the extended portion of sensor material.

摘要翻译： 具有由CoPtCrB构成的硬偏置层的磁致电阻传感器，其在诸如AFM层或其它传感器材料的结晶材料上沉积时具有高的矫顽力。 即使当沉积在诸如下面的传感器材料的结晶结构上时，偏置层材料通过不假定下面的晶体层的晶体结构，表现出高的矫顽力和高的力矩。 偏置层材料特别有利于在部分磨机传感器设计中使用，其中传感器层的一部分延伸超出传感器的有效区域，并且偏置层必须沉积在传感器材料的延伸部分上。

公开(公告)号：US20060023371A1

公开(公告)日：2006-02-02

申请号：US10903097

申请日：2004-07-30

申请人： Phong Chau ,  James Freitag ,  Mustafa Pinarbasi ,  Hua Zeng

发明人： Phong Chau ,  James Freitag ,  Mustafa Pinarbasi ,  Hua Zeng

IPC分类号： G11B5/127 ,  G11B5/33 ,  C23F1/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T428/1107

摘要： A method of manufacturing a GMR, TMR or CPP GMR sensor having a smooth interface between magnetic and non-magnetic layers to improve sensor performance by exposing a layer to a low energy ion beam prior to depositing a subsequent layer.

摘要翻译： 一种制造具有磁性和非磁性层之间平滑界面的GMR，TMR或CPP GMR传感器的方法，以在沉积后续层之前将层暴露于低能量离子束来提高传感器性能。

公开(公告)号：US06980404B2

公开(公告)日：2005-12-27

申请号：US10289105

申请日：2002-11-06

申请人： James Mac Freitag ,  Mustafa Pinarbasi

发明人： James Mac Freitag ,  Mustafa Pinarbasi

IPC分类号： G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

摘要： A giant magnetoresistance (GMR) head for magnetic storage systems, the GMR head having a free layer with improved soft magnetic properties while retaining giant magnetoresistance (GMR) effects. The free layer comprises an alloy comprising Cox, Fey, and Cuz, wherein x, y, and z represent the atomic weight percentage of Co, Fe, and Cu, respectively.

摘要翻译： 用于磁存储系统的巨磁阻（GMR）磁头，GMR磁头具有改善的软磁特性的自由层，同时保持巨磁阻（GMR）效应。 自由层包含合金，其中x，y和z代表原子重量百分比 的Co，Fe和Cu。

公开(公告)号：US20050128652A1

公开(公告)日：2005-06-16

申请号：US10732200

申请日：2003-12-10

申请人： James Freitag ,  Hardayal Gill ,  Jih-Shiuan Luo ,  Mustafa Pinarbasi

发明人： James Freitag ,  Hardayal Gill ,  Jih-Shiuan Luo ,  Mustafa Pinarbasi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/33 ,  G11B5/3932 ,  G11B2005/3996

摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.

摘要翻译： 在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。 第一厚度略大于第二厚度。 如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。

公开(公告)号：US20050120546A1

公开(公告)日：2005-06-09

申请号：US11034351

申请日：2005-01-11

申请人： Michael Parker ,  Mustafa Pinarbasi ,  Robert Schwenker

发明人： Michael Parker ,  Mustafa Pinarbasi ,  Robert Schwenker

IPC分类号： G11B5/31 ,  G11B5/39 ,  H01F10/32 ,  G11B5/127

CPC分类号： B82Y25/00 ,  G11B5/3133 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/32 ,  Y10T29/49025 ,  Y10T29/49032

摘要： The present invention is directed towards increasing the conductivity of the electrical lead material in the read head portion of a magnetic head, such that thinner electrical leads can be fabricated while the current carrying capacity of the leads is maintained. This increase in electrical lead conductivity is accomplished by fabricating the electrical lead upon an epitaxially matched seed layer, such that the crystalline microstructure of the electrical lead material has fewer grain boundaries, whereby the electrical conductivity of the lead material is increased. In a preferred embodiment, the electrical lead material is comprised of Rh, which has an FCC crystal structure, and the seed layer is comprised of a metal, or metal alloy having a BCC crystal structure with unit cell lattice constant dimensions that satisfy the relationship that abcc is approximately equal to 0.816afcc. In various embodiments, the seed layer is comprised of VMo or VW.

摘要翻译： 本发明旨在增加磁头的读头部分中的引线材料的导电性，使得可以在保持导线的载流能力的同时制造更薄的电引线。 通过在外延匹配的种子层上制造电引线，使得引线材料的结晶微结构具有更少的晶界，从而提高引线材料的导电性，从而实现电导线导电性的提高。 在优选实施例中，电引线材料由具有FCC晶体结构的Rh组成，并且种子层由具有单位晶格恒定尺寸的具有BCC晶体结构的金属或金属合金构成，满足以下关系： 一个bcc 大约等于0.816a Fcc 。 在各种实施方案中，种子层由VMo或VW组成。

公开(公告)号：US06891704B2

公开(公告)日：2005-05-10

申请号：US10692977

申请日：2003-10-24

申请人： Mustafa Pinarbasi

发明人： Mustafa Pinarbasi

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/31812

摘要： A method of making provides a smooth surface of a pinned or free layer interfacing a barrier layer in a tunnel junction sensor wherein the smooth surface is an oxidized monolayer of the pinned or free layer. After sputter depositing the pinned or free layer the layer is subjected to an oxygen (O2) atmosphere which is extremely low for a very short duration. In a preferred embodiment of the invention a partial thickness of the barrier layer is provided with a smooth surface by the same process after which a remainder thickness of the barrier layer is deposited and the barrier layer is exposed to oxygen (O2) to form an oxide of the deposited metal.

摘要翻译： 一种制备方法提供了在隧道结传感器中接合阻挡层的钉扎或自由层的光滑表面，其中光滑表面是被钉扎或自由层的氧化单层。 在溅射沉积被钉扎或自由层之后，该层经受非常短的持续时间极低的氧（O 2 O 2）气氛。 在本发明的优选实施例中，阻挡层的部分厚度通过相同的工艺设置有光滑表面，之后沉积阻挡层的剩余厚度，并且阻挡层暴露于氧（O 2 / SUB>）以形成沉积金属的氧化物。

公开(公告)号：US20050068693A1

公开(公告)日：2005-03-31

申请号：US10675832

申请日：2003-09-30

申请人： James Freitag ,  Mustafa Pinarbasi

发明人： James Freitag ,  Mustafa Pinarbasi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/332

摘要： In one illustrative embodiment of the invention, a spin valve sensor of a magnetic head has a free layer structure; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer structure and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer; a second AP pinned layer; an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. At least one of the first and the second AP pinned layers is made of cobalt having no iron content. The other AP pinned layer may be formed of cobalt, cobalt-iron, or other suitable material. The use of cobalt in the AP self-pinned layer structure increases its magnetostriction to increase the self-pinning effect. Preferably, the first AP pinned layer is cobalt-iron and the second AP pinned layer is cobalt which provides for both an increase in magnetostriction and magnetoresistive coefficient Δr/R of the sensor.

摘要翻译： 在本发明的一个说明性实施例中，磁头的自旋阀传感器具有自由层结构; 反平行（AP）自固定层结构; 以及在自由层结构和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括第一AP固定层; 第二个AP钉扎层; 形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。 第一和第二AP钉扎层中的至少一个由不含铁含量的钴制成。 另一个AP钉扎层可以由钴，钴 - 铁或其它合适的材料形成。 在AP自固化层结构中使用钴增加其磁致伸缩以增加自固定效应。 优选地，第一AP钉扎层是钴铁，并且第二AP钉扎层是钴，其提供传感器的磁致伸缩系数和磁阻系数Deltar / R的增加。

公开(公告)号：US06856493B2

公开(公告)日：2005-02-15

申请号：US10104124

申请日：2002-03-21

申请人： Mustafa Pinarbasi

发明人： Mustafa Pinarbasi

IPC分类号： G11B5/00 ,  G11B5/31 ,  G11B5/39

CPC分类号： B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/0016

摘要： A spin valve sensor has an antiparallel (AP) pinned layer structure which has ferromagnetic first and second AP pinned layers that are separated by an antiparallel coupling layer. The first and second AP pinned layers are self-pinned antiparallel with respect to one another without the assistance of an antiferromagnetic (AFM) pinning layer. The spin valve sensor further includes an in-stack longitudinal biasing layer structure which is magnetostatically coupled to the free layer for longitudinally biasing a magnetic moment of the free layer parallel to an air bearing surface and parallel to major planes of the layers of the sensor. The only AFM pinning layer employed is in the biasing layer structure so that when the magnetic spins of the AFM pinning layer are set the orientations of the magnetic moments of the AP pinned layer structure are not disturbed.

摘要翻译： 自旋阀传感器具有反平行（AP）钉扎层结构，其具有由反平行耦合层分离的铁磁第一和第二AP钉扎层。 第一和第二AP钉扎层在没有反铁磁（AFM）钉扎层的帮助下相对于彼此反向自平行。 自旋阀传感器还包括叠层纵向偏置层结构，其被静磁耦合到自由层，用于纵向偏置自由层的磁矩平行于空气轴承表面并平行于传感器的各层的主平面。 所采用的唯一的AFM钉扎层在偏置层结构中，使得当设置AFM钉扎层的磁自旋时，AP被钉扎层结构的磁矩的取向不受干扰。

公开(公告)号：US20050024790A1

公开(公告)日：2005-02-03

申请号：US10630817

申请日：2003-07-29

申请人： Mustafa Pinarbasi

发明人： Mustafa Pinarbasi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/127

摘要： A magnetic read head has a current perpendicular to the planes (CPP) sensor with a top cap layer that is ruthenium (Ru) or rhodium (Rh) or a top cap layer structure which includes a first layer of tantulum (Ta) only, a second layer of ruthenium (Ru), rhodium (Rh) or gold (Au) with the first layer being located between a spacer layer and the second layer.

摘要翻译： 磁读头具有垂直于平面（CPP）传感器的电流，其顶盖层为钌（Ru）或铑（Rh）或顶盖层结构，其仅包括第一层（Ta），第 第二层钌（Ru），铑（Rh）或金（Au），其中第一层位于间隔层和第二层之间。

公开(公告)号：US20050007705A1

公开(公告)日：2005-01-13

申请号：US10615554

申请日：2003-07-07

申请人： Elizabeth Dobisz ,  James Freitag ,  Mustafa Pinarbasi ,  Patrick Webb

发明人： Elizabeth Dobisz ,  James Freitag ,  Mustafa Pinarbasi ,  Patrick Webb

IPC分类号： G11B5/39

CPC分类号： G11B5/3906 ,  Y10T29/49032

摘要： The magnetic head of the present invention includes a magnetoresistive read head element in which a magnetic bias layer is deposited across the surface of the wafer above the free magnetic layer. Central portions of the biasing layer that correspond to the read head track width are oxidized to essentially remove the magnetic moment of the bias layer material in those central locations. An oxygen diffusion barrier layer is then deposited upon the oxidized central portions of the biasing layer to prevent diffusion or migration of oxygen from the oxidized central regions of the biasing layer. An insulation layer, a second magnetic shield layer and further structures of the magnetic head are subsequently fabricated.

摘要翻译： 本发明的磁头包括磁阻读头元件，其中磁偏置层跨过自由磁层上的晶片表面。 对应于读头磁道宽度的偏置层的中心部分被氧化以基本上去除那些中心位置处的偏置层材料的磁矩。 然后将氧扩散阻挡层沉积在偏置层的氧化中心部分上，以防止氧从偏置层的氧化中心区域扩散或迁移。 随后制造绝缘层，第二磁屏蔽层和磁头的其它结构。