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176 条记录 (耗时 0.028 秒)

    Spin-injection devices on silicon material for conventional BiCMOS technology
    74.
    发明授权
    Spin-injection devices on silicon material for conventional BiCMOS technology 有权
    用于常规BiCMOS技术的硅材料上的旋转注入器件

    公开(公告)号：US06963091B1

    公开(公告)日：2005-11-08

    申请号：US10743845

    申请日：2003-12-22

    申请人： Vladislav Vashchenko ,  Michael Mian ,  Peter J. Hopper

    发明人： Vladislav Vashchenko ,  Michael Mian ,  Peter J. Hopper

    IPC分类号： H01L27/06 ,  H01L29/45 ,  H01L29/66

    CPC分类号： H01L29/66984 ,  H01L27/0623 ,  H01L29/456

    摘要： Spin-based microelectronic devices can be realized by utilizing ferromagnetic structures that make good ohmic contact with silicon, in order to avoid the Schottky barrier problem plaguing existing approaches to spin-based microelectronics, while allowing the devices to be based on silicon substrates, which are well-known and used in the industry. Thin layers of metal silicide, such as CoSi2 and NiSi2, are used as an intermediate layer between ferromagnetic contacts, such as cobalt and nickel contacts, and the silicon substrate. The thin silicide layers provide good ohmic contact between the ferromagnetic contacts and silicon, such that spin-polarized carriers can be injected into the silicon, and detected out of the silicon, without loss of spin polarization.

    摘要翻译： 可以通过利用与硅进行良好的欧姆接触的铁磁结构来实现基于旋转的微电子器件，以避免肖特基势垒问题困扰现有的基于旋转的微电子学方法，同时允许器件基于硅衬底 闻名于世的行业。 金属硅化物的薄层，例如CoSi 2和NiSi 2，被用作铁磁性触点（例如钴和镍触点）和硅衬底之间的中间层。 薄硅化物层在铁磁触点和硅之间提供良好的欧姆接触，使得自旋极化载流子可以注入硅中，并从硅中检测出，而不损失自旋极化。

    Non-volatile memory cell with gated diode and MOS transistor and method for using such cell
    75.
    发明授权
    Non-volatile memory cell with gated diode and MOS transistor and method for using such cell 有权
    具有门控二极管和MOS晶体管的非易失性存储单元及其使用方法

    公开(公告)号：US06862216B1

    公开(公告)日：2005-03-01

    申请号：US10880176

    申请日：2004-06-29

    申请人： Peter J. Hopper ,  Yuri Mirgorodski ,  Vladislav Vashchenko

    发明人： Peter J. Hopper ,  Yuri Mirgorodski ,  Vladislav Vashchenko

    IPC分类号： G11C16/04 ,  H01L29/788 ,  H01L29/861 ,  G11C16/06

    CPC分类号： G11C16/0416 ,  H01L29/7881 ,  H01L29/8616

    摘要： A non-volatile memory cell including a gated diode and a single readout transistor, methods for programming and reading out such a cell, and a memory including an array of such cells. The readout transistor is an MOS transistor. The transistor and gated diode are formed in a volume of semiconductor material of one type, and share a source region, a control gate, and a floating gate. The transistor has a drain region formed of semiconductor material of one type and the diode has a drain region formed of semiconductor material of the opposite type.

    摘要翻译： 包括门控二极管和单个读出晶体管的非易失性存储单元，用于编程和读出这样的单元的方法以及包括这种单元阵列的存储器。 读出晶体管是MOS晶体管。 晶体管和门控二极管形成为一种类型的半导体材料的体积，并且共享源极区域，控制栅极和浮动栅极。 晶体管具有由一种类型的半导体材料形成的漏极区域，并且二极管具有由相反类型的半导体材料形成的漏极区域。

    Bipolar transistor-based electrostatic discharge (ESD) protection structure with a heat sink
    80.
    发明授权
    Bipolar transistor-based electrostatic discharge (ESD) protection structure with a heat sink 有权
    双极晶体管静电放电（ESD）保护结构，带散热片

    公开(公告)号：US06777784B1

    公开(公告)日：2004-08-17

    申请号：US09690580

    申请日：2000-10-17

    申请人： Vladislav Vashchenko ,  Peter J. Hopper

    发明人： Vladislav Vashchenko ,  Peter J. Hopper

    IPC分类号： H01L27082

    CPC分类号： H01L27/0259

    摘要： An ESD protection structure for use with bipolar or BiCMOS ICs that is relatively immune to thermal overheating and, thus, stable during an ESD event. This immunity is achieved by employing a heat sink region adjacent to a polysilicon emitter within a distance of less than 2 microns. Such a heat sink region provides temporal heat capacity to locally dissipate the heat generated during an ESD event. Bipolar transistor-based ESD protection structures according to the present invention include a semiconductor substrate and a bipolar transistor in and on the semiconductor. The bipolar transistor includes a base region, a collection region and a polysilicon emitter. The bipolar transistor-based ESD protection structures also include a heat sink region disposed above the semiconductor substrate adjacent to the polysilicon emitter. The heat sink region is formed of a material with a heat capacity and/or thermal conductivity that is greater than the heat capacity and/or thermal conductivity of the material (typically an SiO2-based material) which conventionally covers the ESD protection structures. The heat sink region can be formed, for example, of metal and/or polysilicon. In one embodiment, the heat sink region is floating and disposed adjacent to the polysilicon. In another embodiment, the heat sink region is integrated with a metal contact to the polysilicon emitter, thereby making the otherwise conventional metal contact bulkier. By locally providing extra heat capacity (i.e., a floating heat sink region or a bulky metal contact), heat is dissipated during an ESD event, thereby increasing ESD protection capability and reliability.

    摘要翻译： 用于双相或BiCMOS IC的ESD保护结构，其相对地不受热过热的影响，因此在ESD事件期间是稳定的。 通过在小于2微米的距离内使用与多晶硅发射器相邻的散热区来实现该抗扰度。 这样的散热区域提供时间热容量以局部消散在ESD事件期间产生的热量。 根据本发明的基于双极晶体管的ESD保护结构包括在半导体中和半导体上的半导体衬底和双极晶体管。 双极晶体管包括基极区域，收集区域和多晶硅发射极。 基于双极晶体管的ESD保护结构还包括设置在与多晶硅发射极相邻的半导体衬底之上的散热片区域。 散热区域由热容量和/或导热系数大于材料（通常为SiO 2基材料）的热容量和/或热导率（通常覆盖ESD保护结构）的材料形成。 散热区域可以由例如金属和/或多晶硅形成。 在一个实施例中，散热区域是浮置的并且与多晶硅相邻地设置。 在另一个实施例中，散热片区域与金属接触件一体化到多晶硅发射器，从而使常规的金属接触体积更大。 通过局部地提供额外的热容量（即，浮动散热区域或庞大的金属接触），在ESD事件期间散热，从而增加ESD保护能力和可靠性。