摘要:
A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.
摘要:
In certain aspects, the disclosure relates to a projection objective, in particular for a microlithography exposure apparatus, serving to project an image of an object field in an object plane onto an image field in an image plane. The projection objective includes a system aperture stop and refractive and/or reflective optical elements that are arranged relative to an optical system axis. The centroid of the image field is arranged at a lateral distance from the optical system axis). The system aperture stop has an inner aperture stop border which encloses an aperture stop opening and whose shape is defined by a border contour curve. The border contour curve runs at least in part outside of a plane that spreads orthogonally to the optical system axis.
摘要:
A projection objective for imaging a pattern provided in an object surface onto an image surface of the projection objective has an object-side imaging subsystem for creating a final intermediate image closest to the image surface from radiation coming from the object surface and an image-side imaging subsystem for directly imaging the final intermediate image onto the image surface. The image-side imaging subsystem includes at least one aspheric primary correcting lens having an aspheric primary correcting surface. The object-side imaging subsystem includes a secondary correcting group having at least one secondary correcting lens having an aspheric secondary correcting surface. Conditions involving maximum incidence angles and subaperture offsets at the correcting surfaces are given which should be observed to obtain sufficient aberration correction at very high image-side numerical apertures NA.
摘要:
In certain aspects, the disclosure relates to a projection objective, in particular for a microlithography exposure apparatus, serving to project an image of an object field in an object plane onto an image field in an image plane. The projection objective includes a system aperture stop and refractive and/or reflective optical elements that are arranged relative to an optical system axis. The centroid of the image field is arranged at a lateral distance from the optical system axis). The system aperture stop has an inner aperture stop border which encloses an aperture stop opening and whose shape is defined by a border contour curve. The border contour curve runs at least in part outside of a plane that spreads orthogonally to the optical system axis.
摘要:
A projection objective for imaging a pattern provided in an object surface onto an image surface of the projection objective has an object-side imaging subsystem for creating a final intermediate image closest to the image surface from radiation coming from the object surface and an image-side imaging subsystem for directly imaging the final intermediate image onto the image surface. The image-side imaging subsystem includes at least one aspheric primary correcting lens having an aspheric primary correcting surface. The object-side imaging subsystem includes a secondary correcting group having at least one secondary correcting lens having an aspheric secondary correcting surface. Conditions involving maximum incidence angles and subaperture offsets at the correcting surfaces are given which should be observed to obtain sufficient aberration correction at very high image-side numerical apertures NA.
摘要:
The invention relates to a projection exposure apparatus with a projection objective that serves to project a structure onto a substrate coated with a light-sensitive resist, wherein an immersion liquid is arranged between an optical element of the projection objective and the resist-coated substrate. As an immersion liquid saturated cyclic or polycyclic hydrocarbons can be used, such as for example cyclo-alkanes comprising up to 12 carbon atoms, saturated polycyclic hydrocarbons with 2 to 6 rings, bridged polycyclic hydrocarbons, cyclic ethers and derivatives of these substances.
摘要:
A very high-aperture, purely refractive projection objective having a multiplicity of optical elements has a system diaphragm (5) arranged at a spacing in front of the image plane. The optical element next to the image plane (3) of the projection objective is a planoconvex lens (34) having a substantially spherical entrance surface and a substantially flat exit surface. The planoconvex lens has a diameter that is at least 50% of the diaphragm diameter of the system diaphragm (5). It is preferred to arrange only positive lenses (32, 33, 34) between the system diaphragm (5) and image plane (3). The optical system permits imaging in the case of very high apertures of NA≧0.85, if appropriate of NA≧1.
摘要:
A microlithographic projection exposure apparatus contains an illumination system (12) for generating projection light (13) and a projection lens (20; 220; 320; 420; 520; 620; 720; 820; 920; 1020; 1120) with which a reticle (24) that is capable of being arranged in an object plane (22) of the projection lens can be imaged onto a light-sensitive layer (26) that is capable of being arranged in an image plane (28) of the projection lens. The projection lens is designed for immersion mode, in which a final lens element (L5; L205; L605; L705; L805; L905; L1005; L1105) of the projection lens on the image side is immersed in an immersion liquid (34; 334a; 434a; 534a). A terminating element (44; 244; 444; 544; 644; 744; 844; 944; 1044; 1144) that is transparent in respect of the projection light (13) is fastened between the final lens element on the image side and the light-sensitive layer.
摘要:
A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.