公开(公告)号：US20150243747A1

公开(公告)日：2015-08-27

申请号：US14628541

申请日：2015-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jorge A. Kittl ,  Dharmendar Reddy Palle ,  Mark S. Rodder

IPC: H01L29/417 ,  H01L29/45 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L29/41791 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/45 ,  H01L29/7848 ,  H01L29/7851 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Integrated circuit devices including contacts and methods of forming the same are provided. The devices may include a fin on a substrate, a gate structure on the fin and a source/drain region in the fin at a side of the gate structure. The devices may further include a contact plug covering an uppermost surface of the source/drain region and a sidewall of the gate structure. The contact plug may include an inner portion including a first material and an outer portion including a second material different from the first material. The outer portion may at least partially cover a sidewall of the inner portion, and a portion of the outer portion may be disposed between the sidewall of the gate structure and the sidewall of the inner portion.

Abstract translation: 提供了包括触点的集成电路装置及其形成方法。 器件可以包括衬底上的翅片，翅片上的栅极结构和栅极结构侧的鳍中的源极/漏极区域。 所述装置还可以包括覆盖源极/漏极区域的最上表面和栅极结构的侧壁的接触插塞。 接触插塞可以包括包括第一材料的内部部分和包括不同于第一材料的第二材料的外部部分。 外部部分可以至少部分地覆盖内部部分的侧壁，并且外部部分的一部分可以设置在门结构的侧壁和内部部分的侧壁之间。

公开(公告)号：US20150123075A1

公开(公告)日：2015-05-07

申请号：US14304008

申请日：2014-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ryan M. Hatcher ,  Mark S. Rodder ,  Robert C. Bowen ,  Jorge A. Kittl

IPC: H01L29/10 ,  H01L29/15 ,  H01L29/78

CPC classification number: H01L29/7781 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/122 ,  H01L29/22 ,  H01L29/267 ,  H01L29/66431 ,  H01L29/785

Abstract: Integrated circuit devices including strained channel regions and methods of forming the same are provided. The integrated circuit devices may include enhancement-mode field effect transistors. The enhancement-mode field effect transistors may include a quantum well channel region having a well thickness TW sufficient to yield a strain-induced splitting of a plurality of equivalent-type electron conduction states therein to respective unequal energy levels including a lowermost energy level associated with a lowermost surface roughness scattering adjacent a surface of the channel region when, the surface is biased into a state of inversion.

Abstract translation: 提供包括应变通道区域的集成电路器件及其形成方法。 集成电路器件可以包括增强型场效应晶体管。 增强型场效应晶体管可以包括具有足够的阱厚度TW的量子阱沟道区，其足以产生其中的多个等效电子传导状态的应变引起的分裂到相应的不等能级，包括与 当表面被偏置到反转状态时，邻近通道区域的表面的最低表面粗糙度散射。