公开(公告)号：US5296719A

公开(公告)日：1994-03-22

申请号：US915311

申请日：1992-07-20

Applicant: Yoshihiko Hirai ,  Juro Yasui ,  Yasuaki Terui ,  Kiyoshi Morimoto ,  Atsuo Wada ,  Kenji Okada ,  Shin Hashimoto ,  Shinji Odanaka ,  Masaaki Niwa ,  Kaoru Inoue

Inventor： Yoshihiko Hirai ,  Juro Yasui ,  Yasuaki Terui ,  Kiyoshi Morimoto ,  Atsuo Wada ,  Kenji Okada ,  Shin Hashimoto ,  Shinji Odanaka ,  Masaaki Niwa ,  Kaoru Inoue

IPC: H01L21/265 ,  H01L21/335 ,  H01L29/12 ,  H01L29/423 ,  H01L29/49 ,  H01L21/308 ,  H01L27/08

CPC classification number: H01L29/4908 ,  B82Y10/00 ,  H01L21/26586 ,  H01L29/125 ,  H01L29/66439 ,  H01L29/78 ,  Y10S438/962

Abstract: A quantum wire is formed at the top of triangular protrusion of silicon substrate. A quantum wire is isolated from the substrate by silicon oxide layers. A quantum wire is isolated from the substrate by impurity layers of a conduction type different from that of the substrate. An insulator film and a gate electrode are formed at the edge of triangular protrusion of a silicon substrate, and a quantum wire is induced by applying a voltage to the gate electrode. A quantum wire structure is fabricated by forming saw-tooth-like protrusions having (111) side planes by performing anisotropic crystalline etching and by oxidizing the silicon substrate with use of the oxide protection film to remain only around the top of the protrusions unoxidized. In another method, an oxide film is formed except around the top of the protrusions whereby a quantum wire is formed at the unoxidized region. In a different method, impurity layers are formed except around the top of the protrusions by ion implantation.

Abstract translation: 量子线形成在硅衬底的三角形突起的顶部。 量子线通过氧化硅层与衬底隔离。 通过不同于衬底的导电类型的杂质层将量子线与衬底隔离。 绝缘膜和栅电极形成在硅衬底的三角形突起的边缘处，并且通过向栅电极施加电压来诱导量子线。 通过形成具有（111）侧面的锯齿形突起，通过进行各向异性的结晶蚀刻，并且通过使用氧化物保护膜氧化硅衬底而制成量子线结构，仅保留在未氧化的突起的顶部。 在另一种方法中，除了突起的顶部之外形成氧化物膜，从而在未氧化区域形成量子线。 在不同的方法中，通过离子注入除了突起的顶部之外形成杂质层。