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公开(公告)号：US06475812B2
公开(公告)日：2002-11-05
申请号：US09802650
申请日：2001-03-09
IPC分类号： H01L2100
CPC分类号： H01L27/222 , B82Y10/00 , G11C11/16
摘要： A method for cladding two or three sides of a top conductor for a magnetic memory device in ferromagnetic material includes forming a trench with side walls in a coating layer above the memory device. A first ferromagnetic material is deposited along the side walls of the trench. Any ferromagnetic material in a bottom of the trench can be removed. A conductor material is deposited in the trench over the memory device. A second ferromagnetic material is deposited over the conductor material in the trench to form a cladding of the ferromagnetic material around three side of the conductor.
摘要翻译： 用于包覆铁磁材料中的磁存储器件的顶部导体的两侧或三侧的方法包括在存储器件上方的涂层中形成具有侧壁的沟槽。 第一铁磁材料沿沟槽的侧壁沉积。 可以去除沟槽底部的任何铁磁材料。 导体材料沉积在存储器件上的沟槽中。 第二铁磁材料沉积在沟槽中的导体材料上，以形成围绕导体三侧的铁磁材料的包层。
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公开(公告)号：US06456525B1
公开(公告)日：2002-09-24
申请号：US09663752
申请日：2000-09-15
IPC分类号： G11C1114
CPC分类号： H01L27/222 , G11C11/16 , G11C13/0004
摘要： A data storage device includes a resistive cross point array of memory cells. Each memory cell includes a memory element and a resistive element connected in series with the memory element. The resistive elements substantially attenuate any sneak path currents flowing through shorted memory elements during read operations. The data storage device may be a Magnetic Random Access Memory (“MRAM”) device.
摘要翻译： 数据存储装置包括存储单元的电阻交叉点阵列。 每个存储单元包括与存储元件串联连接的存储元件和电阻元件。 电阻元件在读取操作期间基本上衰减流过短路存储器元件的任何潜行路径电流。 数据存储装置可以是磁随机存取存储器（“MRAM”）装置。
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73.发明授权公开(公告)号：US06404674B1
公开(公告)日：2002-06-11
申请号：US09825461
申请日：2001-04-02
申请人： Thomas C. Anthony , Manish Sharma
发明人： Thomas C. Anthony , Manish Sharma
IPC分类号： G11C1115
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/222
摘要： A magnetic memory cell having read-write conductor that is wholly clad with a high magnetic permeability soft magnetic material for a pinned-on-the-fly soft ferromagnetic reference layer is disclosed. The magnetic memory cell includes a ferromagnetic data layer, an intermediate layer formed on the ferromagnetic data layer, and a soft ferromagnetic reference layer having a non-pinned orientation of magnetization formed on the intermediate layer. The soft ferromagnetic reference layer includes a read-write conductor and a ferromagnetic cladding that completely surrounds the read-write conductor to form a cladded read-write conductor. During a read operation, a read current flowing through the read-write conductor generates a read magnetic field that does not saturate the ferromagnetic cladding. During a write operation, a write current flowing through the read-write conductor generates a write magnetic field that saturates the ferromagnetic cladding and extends to the ferromagnetic data layer.
摘要翻译： 公开了一种具有读写导体的磁存储单元，该导体全部用高导磁率的软磁材料包覆在一个固定的软铁磁参考层上。 磁存储单元包括铁磁数据层，形成在铁磁数据层上的中间层和在中间层上形成的具有非磁化取向的磁化铁磁参考层。 软铁磁参考层包括完全包围读写导体以形成包层读写导体的读写导体和铁磁包层。 在读操作期间，流经读写导体的读电流产生不使铁磁包层饱和的读磁场。 在写入操作期间，流过读写导体的写入电流产生使铁磁包层饱和并延伸到铁磁数据层的写入磁场。
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公开(公告)号：US06324093B1
公开(公告)日：2001-11-27
申请号：US09663016
申请日：2000-09-15
IPC分类号： G11C1114
CPC分类号： G11C17/146 , G11C11/14
摘要： A data storage device includes a group of memory cells. Write-once operations may be performed by damaging the thin-film barriers of at least some of the memory cells. The data storage device may be a Magnetic Random Access Memory (“MRAM”) device.
摘要翻译： 数据存储装置包括一组存储单元。 可以通过损坏至少一些存储器单元的薄膜屏障来执行一次写入操作。 数据存储装置可以是磁随机存取存储器（“MRAM”）装置。
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公开(公告)号：US6072717A
公开(公告)日：2000-06-06
申请号：US146819
申请日：1998-09-04
摘要： A stabilized magnetic memory cell including a data storage layer having an interior region and a pair of end regions near a pair of opposing edges of the data storage layer and a stabilizing material that pins a magnetization in the end regions to a predetermined direction. A method for stabilizing a magnetic memory cell includes the steps of applying a magnetic field that rotates a magnetization in a pair of opposing side regions of a data storage layer of the magnetic memory cell toward a predetermined direction and that reduces free poles in a pair of opposing end regions of the magnetic memory cell, thereby reducing the likelihood of unpredictable switching behavior in the end regions.
摘要翻译： 一种稳定磁存储单元，包括具有在数据存储层的一对相对边缘附近的内部区域和一对端部区域的数据存储层，以及稳定材料，其将端部区域中的磁化引导至预定方向。 一种用于稳定磁存储单元的方法包括以下步骤：施加磁场，该磁场将磁存储单元的数据存储层的一对相对侧区域的磁化旋转到预定方向，并且减小一对 磁存储单元的相对的端部区域，从而降低端部区域中不可预测的开关行为的可能性。
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