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公开(公告)号：US06947313B2
公开(公告)日：2005-09-20
申请号：US10649076
申请日：2003-08-27
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15
摘要： Method and apparatus for coupling conductors in magnetic memory. In some embodiments, the memory element comprises: a first magnetic memory element, a first group of conductors magnetically coupled to the first magnetic memory element, a second magnetic memory element, a second group of conductors magnetically coupled to the second magnetic memory element, where the second magnetic memory element is substantially vertical to the first, and the first and second group of conductors have at least one conductor in common.
摘要翻译： 在磁存储器中耦合导体的方法和装置。 在一些实施例中，存储元件包括：第一磁存储元件，磁耦合到第一磁存储元件的第一组导体，第二磁存储元件，与第二磁存储器元件磁耦合的第二组导体， 第二磁存储元件基本上垂直于第一磁存储元件，并且第一和第二组导体具有至少一个共同的导体。
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公开(公告)号：US06865107B2
公开(公告)日：2005-03-08
申请号：US10601895
申请日：2003-06-23
CPC分类号： G11C11/15
摘要： A magnetic memory array is described having a plurality of bit cells. Each bit cell includes at least one magnetic layer having free magnetic poles with a corresponding demagnetization field. A magnetic flux absorbing layer is disposed between at least two of the plurality of bit cells.
摘要翻译： 描述了具有多个位单元的磁存储器阵列。 每个位单元包括至少一个具有相应去磁场的具有自由磁极的磁性层。 磁通量吸收层设置在多个位单元中的至少两个位单元之间。
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公开(公告)号：US07102921B2
公开(公告)日：2006-09-05
申请号：US10843787
申请日：2004-05-11
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/1675
摘要： The present invention provides a magnetic memory device that includes a magnetic memory cell switchable between two states by the application of a magnetic field wherein the magnetic field for such switching is dependent in part on a memory cell temperature. The device further includes at least one heater element proximate to the magnetic memory cell and series connected with the magnetic memory cell for heating of the magnetic memory cell. The device also includes a circuit for selectively applying the electrical current through the at least one heater element so as to heat the cell and facilitate cell state-switching.
摘要翻译： 本发明提供了一种磁存储器件，其包括通过施加磁场在两个状态之间切换的磁存储器单元，其中用于这种切换的磁场部分地取决于存储单元温度。 该装置还包括靠近磁存储器单元的至少一个加热器元件，并且与磁存储单元连接的用于加热磁存储单元的串联。 该装置还包括用于选择性地施加电流通过至少一个加热器元件以便加热电池并促进电池状态切换的电路。
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4.发明授权公开(公告)号：US06930370B2
公开(公告)日：2005-08-16
申请号：US10681483
申请日：2003-10-08
IPC分类号： H01L27/10 , G11C7/18 , G11C11/15 , H01L21/00 , H01L21/82 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L29/76 , H01L31/062 , H01L43/08 , G11O11/00
CPC分类号： H01L27/222 , G11C11/15
摘要： A memory includes an array of magnetic memory cells, each magnetic memory cell being adapted to store a bit of information, interconnects in communication with the magnetic memory cells, and conductors in communication with the magnetic memory cells and the interconnects, the conductors filling spaces between adjacent magnetic memory cells of the array.
摘要翻译： 存储器包括磁存储器单元阵列，每个磁存储单元适于存储信息位，与磁存储单元通信的互连以及与磁存储单元和互连通信的导体，导体之间填充空间 阵列的相邻磁存储单元。
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公开(公告)号：US07057920B2
公开(公告)日：2006-06-06
申请号：US10832912
申请日：2004-04-26
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/1675
摘要： A method of performing a thermally assisted write operation on a selected two conductor spin valve memory (SVM) cell having a material wherein the coercivity is decreased upon an increase in temperature. In a particular embodiment, a first write magnetic field is established by a first write current flowing from a first voltage potential to a second voltage potential as applied to the first conductor. A second write magnetic field is established by a second write current flowing from a third voltage potential to a fourth voltage potential as applied to the second conductor. The voltage potential of the first conductor is greater than the voltage potential of the second conductor. As a result, a third current, flows from the first conductor through the SVM cell to the second conductor. The SVM cell has an internal resistance such that the flowing current generates heat within the SVM cell. As the SVM cell is self heated, the coercivity of the SVM cell falls below the combined write magnetic fields.
摘要翻译： 在具有其中矫顽力在温度升高时减小的材料的所选择的两个导体自旋阀存储器（SVM）单元上进行热辅助写入操作的方法。 在特定实施例中，当施加到第一导体时，通过从第一电压电位流向第二电压电位的第一写入电流建立第一写入磁场。 第二写入磁场通过施加到第二导体的从第三电压电位流向第四电压电位的第二写入电流来建立。 第一导体的电压电位大于第二导体的电压电位。 结果，第三电流从第一导体流过SVM电池流到第二导体。 SVM单元具有内部电阻，使得流动电流在SVM单元内产生热量。 由于SVM单元是自加热的，所以SVM单元的矫顽力低于组合的写入磁场。
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公开(公告)号：US06937506B2
公开(公告)日：2005-08-30
申请号：US10753539
申请日：2004-01-08
申请人： Thomas C. Anthony , Frederick A. Perner , Heon Lee
发明人： Thomas C. Anthony , Frederick A. Perner , Heon Lee
IPC分类号： G11C11/02 , G11C11/14 , G11C11/15 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L43/08
CPC分类号： G11C11/15
摘要： A random access memory (MRAM) that includes a magnetic memory cell that is switchable between two states under the influence of a magnetic field. The MARAM also includes an electrical bit line coupled to the magnetic memory cell for generating the magnetic field. The electrical bit line includes a conductive component and a magnetic component to guide magnetic flux associated with the magnetic field towards the magnetic memory cell. A thermal insulator is positioned between the conductive portion and the magnetic memory cell, and the magnetic component has at least one guiding portion that extends from the conductive component towards the magnetic memory cell to guide the magnetic flux around at least a portion of the thermal insulator.
摘要翻译： 一种随机存取存储器（MRAM），其包括在磁场影响下在两个状态之间切换的磁存储单元。 MARAM还包括耦合到磁存储单元的电位线，用于产生磁场。 电位线包括导电部件和磁性部件，以将与磁场相关联的磁通量引向磁存储器单元。 热绝缘体位于导电部分和磁存储单元之间，并且磁性部件具有至少一个引导部分，该引导部分从导电部件朝向磁存储器单元延伸，以引导围绕热绝缘体的至少一部分的磁通量 。
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公开(公告)号：US06765819B1
公开(公告)日：2004-07-20
申请号：US10205531
申请日：2002-07-25
IPC分类号： G11C1100
CPC分类号： G11C11/16
摘要： Magnetic memory devices are disclosed. In one embodiment, the device comprises a memory cell having an easy axis aligned along a first direction, the memory cell being configured so as to be most easily switched from one logic state to another when only receiving a magnetic field along the first direction, and a magnetic biasing element associated with the memory cell, the magnetic biasing element having a magnetic orientation aligned along a second direction different from the first direction.
摘要翻译： 公开了磁存储器件。 在一个实施例中，该装置包括具有沿着第一方向对准的容易轴的存储单元，所述存储单元被配置为当仅沿着第一方向接收磁场时最容易从一个逻辑状态切换到另一逻辑状态;以及 与所述存储单元相关联的磁偏置元件，所述磁偏置元件具有沿着不同于所述第一方向的第二方向排列的磁取向。
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8.发明授权One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells 失效一次性可编程存储器，使用保险丝/反熔丝和垂直取向的熔丝单元存储单元公开(公告)号：US06584029B2
公开(公告)日：2003-06-24
申请号：US09924577
申请日：2001-08-09
IPC分类号： G11C700
CPC分类号： H01L23/5252 , G11C13/0004 , G11C17/16 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A one-time programmable (“OTP”) memory includes one or more memory arrays stacked on top of each other. The OTP memory array is a cross-point array where unit memory cells are formed at the cross-points. The unit memory cell may include a fuse and an anti-fuse in series with each other or may include a vertically oriented fuse. Programming the memory may include the steps of selecting unit memory cells, applying a writing voltage such that critical voltage drop across the selected cells occur. This causes the anti-fuse of the cell to break down to a low resistance. The low resistance of the anti-fuse causes a high current pulse to be delivered to the fuse, which in turn melts the fuse to an open state. Reading the memory may include the steps of selecting unit memory cells for reading, applying a reading voltage to the selected memory cells and measuring whether current is present or not. Equipotential sensing may be used to read the memory.
摘要翻译： 一次性可编程（“OTP”）存储器包括堆叠在彼此之上的一个或多个存储器阵列。 OTP存储器阵列是在交叉点处形成单位存储单元的交叉点阵列。 单元存储单元可以包括彼此串联的保险丝和反熔丝，或者可以包括垂直定向的保险丝。 对存储器进行编程可以包括选择单元存储器单元，施加写入电压以使得跨所选单元格出现临界电压降的步骤。 这使得电池的反熔丝分解成低电阻。 反熔丝的低电阻导致高电流脉冲被输送到保险丝，熔丝将熔丝熔化成打开状态。 读取存储器可以包括以下步骤：选择用于读取的单元存储单元，向所选存储单元施加读取电压并测量是否存在电流。 等电位感测可用于读取存储器。
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公开(公告)号：US06839271B1
公开(公告)日：2005-01-04
申请号：US10685618
申请日：2003-10-15
申请人： Thomas C. Anthony , Frederick A. Perner , Heon Lee
发明人： Thomas C. Anthony , Frederick A. Perner , Heon Lee
IPC分类号： H01L27/105 , G11C11/00 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/10 , H01L43/08
CPC分类号： G11C11/16
摘要： A magnetic memory device which comprises a magnetic memory cell that includes a magnetic material switchable between two resistive states on the application of a magnetic field. The device also comprises a wire that is connected to the magnetic memory cell and has a conductive connecting link and a conductive word or bit line which are electrically connected to each other. The connecting link is disposed between the word or bit line and the magnetic memory cell and has a thermal resistance that is larger than that of the word or bit line so as to provide a barrier for heat conduction from the magnetic memory cell to the word or bit line.
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公开(公告)号：US06456525B1
公开(公告)日：2002-09-24
申请号：US09663752
申请日：2000-09-15
IPC分类号： G11C1114
CPC分类号： H01L27/222 , G11C11/16 , G11C13/0004
摘要： A data storage device includes a resistive cross point array of memory cells. Each memory cell includes a memory element and a resistive element connected in series with the memory element. The resistive elements substantially attenuate any sneak path currents flowing through shorted memory elements during read operations. The data storage device may be a Magnetic Random Access Memory (“MRAM”) device.
摘要翻译： 数据存储装置包括存储单元的电阻交叉点阵列。 每个存储单元包括与存储元件串联连接的存储元件和电阻元件。 电阻元件在读取操作期间基本上衰减流过短路存储器元件的任何潜行路径电流。 数据存储装置可以是磁随机存取存储器（“MRAM”）装置。
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