公开(公告)号：US20100103563A1

公开(公告)日：2010-04-29

申请号：US12289517

申请日：2008-10-29

申请人： Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Toshiyuki Ayukawa

发明人： Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Toshiyuki Ayukawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

摘要： A magnetoresistive element includes first and second shield portions and an MR stack. Each of the first and second shield portions includes a shield bias magnetic field applying layer, and a closed-magnetic-path-forming portion that forms a closed magnetic path in conjunction of the shield bias magnetic field applying layer. The closed-magnetic-path-forming portion includes a single magnetic domain portion. The MR stack is sandwiched between the respective single magnetic domain portions of the first and second shield portions. The closed-magnetic-path-forming portion includes a magnetic-path-expanding portion that forms a magnetic path, the magnetic path being a portion of the closed magnetic path and located between the shield bias magnetic field applying layer and the single magnetic domain portion. The magnetic-path-expanding portion has two end portions located at both ends of the magnetic path, and a middle portion located between the two end portions. A cross section of the magnetic path at the middle portion is greater in width than a cross section of the magnetic path at each of the two end portions.

摘要翻译： 磁阻元件包括第一和第二屏蔽部分和MR堆叠。 第一和第二屏蔽部分中的每一个包括屏蔽偏置磁场施加层和闭合磁路形成部分，其结合屏蔽偏置磁场施加层形成闭合磁路。 封闭磁路形成部分包括单个磁畴部分。 MR堆叠被夹在第一和第二屏蔽部分的相应单个磁畴部分之间。 闭磁路形成部分包括形成磁路的磁路扩展部分，磁路是封闭磁路的一部分，位于屏蔽偏置磁场施加层和单磁畴部分之间 。 磁路扩展部分具有位于磁路两端的两个端部和位于两个端部之间的中间部分。 在中间部分处的磁路的横截面的宽度大于在两个端部中的每一个处的磁路的横截面。

公开(公告)号：US20100097722A1

公开(公告)日：2010-04-22

申请号：US12255105

申请日：2008-10-21

申请人： Tsutomu Chou ,  Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Hironobu Matsuzawa

发明人： Tsutomu Chou ,  Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Hironobu Matsuzawa

IPC分类号： G11B5/48 ,  G11B5/33

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3254 ,  H01L43/10

摘要： The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR.

摘要翻译： 在本发明的巨磁阻器件（CPP-GMR器件）中形成间隔层的一部分的半导体氧化物层由纤锌矿结构的氧化锌组成，该氧化锌掺杂有由至少一种选自以下的金属元素所赋予的掺杂剂： 的Zn，Ge，V和Cr的含量为0.05〜0.90原子％：具有获得更高MR比可以实现的优点，同时阻止面积电阻率AR的增加。

公开(公告)号：US20100039734A1

公开(公告)日：2010-02-18

申请号：US12222543

申请日：2008-08-12

申请人： Shinji Hara ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Takahiko Machita

发明人： Shinji Hara ,  Yoshihiro Tsuchiya ,  Tsutomu Chou ,  Daisuke Miyauchi ,  Takahiko Machita

IPC分类号： G11B5/33

CPC分类号： G11B5/3912 ,  B82Y25/00 ,  G01R31/318536 ,  G01R31/318541 ,  G01R33/093

摘要： A thin film magnetic head includes a magneto-resistance (MR) laminated body, a lower shield layer and an upper shield layer that face the first MR magnetic layer. The lower and upper shield layers respectively have first and second exchange coupling magnetic field application layers and first and second antiferromagnetic layers. An exchange coupling intensity relating to an antiferromagnetic coupling between the second exchange coupling magnetic field application layer and the second antiferromagnetic layer is greater in the peripheral area of a projection area than that of the projection area of the upper shield layer side end surface of the MR laminated body to the film surface's orthogonal direction.

摘要翻译： 薄膜磁头包括面对第一MR磁性层的磁阻（MR）层叠体，下屏蔽层和上屏蔽层。 下屏蔽层和上屏蔽层分别具有第一和第二交换耦合磁场施加层以及第一和第二反铁磁层。 与第二交换耦合磁场施加层和第二反铁磁性层之间的反铁磁耦合有关的交换耦合强度在投影区域的周边区域中大于MR的上屏蔽层侧端面的投影面积 层压体到膜表面的正交方向。

公开(公告)号：US20090310244A1

公开(公告)日：2009-12-17

申请号：US12140670

申请日：2008-06-17

申请人： Koji Shimazawa ,  Tsutomu Chou ,  Yoshihiro Tsuchiya

发明人： Koji Shimazawa ,  Tsutomu Chou ,  Yoshihiro Tsuchiya

IPC分类号： G11B21/02 ,  G11B5/127 ,  G11B5/48

CPC分类号： G11B5/314 ,  G11B2005/0024

摘要： Provided is a thin-film magnetic head that can stably generate electromagnetic field with a desired frequency, even under the existence of significantly strong write field with frequently reversed direction. The head comprises an electromagnetic-field generating element between the first and second magnetic poles. The electromagnetic-field generating element comprises a spin-wave excitation layer provided adjacent to the first magnetic pole and having a magnetization with its direction varied according to external magnetic fields, for generating an high frequency electromagnetic field by an excitation of spin wave. And a magnetization of the spin-wave excitation layer is biased in a direction substantially perpendicular to its layer surface by a portion of magnetic field generated from the first magnetic pole, and pin-wave excitation current flows in the electromagnetic-field generating element in a direction from the second pole to the first pole.

摘要翻译： 本发明提供一种薄膜磁头，即使存在具有频繁反转方向的强大写入场，也能够稳定地产生期望频率的电磁场。 头部包括在第一和第二磁极之间的电磁场产生元件。 电磁场产生元件包括与第一磁极相邻设置并具有根据外部磁场而变化的磁化的自旋波激励层，用于通过自旋波的激发产生高频电磁场。 并且自旋波激发层的磁化通过从第一磁极产生的磁场的一部分在基本上垂直于其层表面的方向上偏置，并且针波激励电流在电磁场产生元件中流动 方向从第二极到第一极。

公开(公告)号：US20090303640A1

公开(公告)日：2009-12-10

申请号：US12109651

申请日：2008-04-25

申请人： Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tsutomu Chou ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Tsuyoshi Ichiki

发明人： Tomohito Mizuno ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tsutomu Chou ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Tsuyoshi Ichiki

IPC分类号： G11B5/33

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01L43/08 ,  H01L43/10

摘要： A magneto resistance effect element includes a first magnetic layer, a second magnetic layer and a spacer layer interposed between the first and second magnetic layers. The magneto resistance effect element is configured to allow sense current to flow in a direction that is perpendicular to film planes of the first magnetic layer, the second magnetic layer and the spacer layer so that a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer varies depending on an external magnetic field. The present invention aims at providing a magneto resistance effect element which ensures high resistance to sense current, while limiting the influence of the current limiting layer on the magnetic layer, and which thereby achieves a high magneto resistance ratio.

摘要翻译： 磁阻效应元件包括介于第一和第二磁性层之间的第一磁性层，第二磁性层和间隔层。 磁阻效应元件被配置为允许感测电流在垂直于第一磁性层，第二磁性层和间隔层的膜平面的方向上流动，使得第一磁性层的磁化方向 并且第二磁性层的磁化方向根据外部磁场而变化。 本发明旨在提供一种确保对感应电流的高电阻的磁阻效应元件，同时限制限流层对磁性层的影响，从而实现高的磁阻比。

公开(公告)号：US20090190272A1

公开(公告)日：2009-07-30

申请号：US12019202

申请日：2008-01-24

申请人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

发明人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3912 ,  G11B5/398 ,  H01L43/08

摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer located and formed such that the magnetoresistive unit is sandwiched between them, with a sense current applied in a stacking direction, wherein said magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is interposed between them, wherein said first shield layer, and said second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and said first ferromagnetic layer, and said second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of said first shield layer and said second shield layer. It is thus possible to achieve an antiparallel magnetization state for two ferromagnetic layers (free layers) with simple structure yet without being restricted by the material and specific structure of an intermediate film interposed between the two ferromagnetic layers (free layers). Further, it is possible to make improvements in linear recording densities by the adoption of a structure capable of making the “read gap length” (the gap between the upper and lower shield layers) short (narrow) thereby meeting recent demands for ultra-high recording densities. Furthermore, it is possible to obtain stable magnetoresistive changes so that much higher reliability is achievable.

摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及位于并形成第一屏蔽层和第二屏蔽层，使得磁阻单元夹在它们之间，并施加感应电流 其中所述磁阻单元包括非磁性中间层，以及层叠并形成第一铁磁层和第二铁磁层，使得所述非磁性中间层介于它们之间，其中所述第一屏蔽层和所述第二屏蔽层 在磁化方向上由磁化方向控制装置控制，并且所述第一铁磁层和所述第二铁磁层在磁性的影响下接收作用，使得存在产生相互磁化相反方向的反平行磁化状态 所述第一屏蔽层的动作 和所述第二屏蔽层。 因此，对于具有简单结构的两个铁磁层（自由层）可以实现反平行磁化状态，而不受介于两个铁磁层（自由层）之间的中间膜的材料和特定结构的限制。 此外，通过采用能够使“读取间隙长度”（上下屏蔽层之间的间隙）短（窄）的结构，可以改善线性记录密度，从而满足最近对超高的要求 记录密度 此外，可以获得稳定的磁阻变化，从而可实现更高的可靠性。

公开(公告)号：US20090073616A1

公开(公告)日：2009-03-19

申请号：US11856438

申请日：2007-09-17

申请人： Koji Shimazawa ,  Tsutomu Chou ,  Yoshihiro Tsuchiya

发明人： Koji Shimazawa ,  Tsutomu Chou ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3967 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3912 ,  H01F10/325

摘要： The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, comprising a magneto-resistive effect unit, and an upper shield layer and a lower shield layer located with that magneto-resistive effect unit sandwiched between them, with a sense current applied in a stacking direction, wherein the magneto-resistive effect unit comprises a nonmagnetic metal intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with that nonmagnetic metal intermediate layer sandwiched between them, wherein the first ferromagnetic layer and said second ferromagnetic layer are exchange coupled via the nonmagnetic metal intermediate layer such that where there is no bias magnetic field applied as yet, their magnetizations are anti-parallel with each other, and at least one of the upper shield layer and the lower shield layer has an inclined magnetization structure with its magnetization inclining with respect to a track width direction, so that by the magnetization of that inclined magnetization structure, a bias magnetic field can be applied to the first ferromagnetic layer and the second ferromagnetic layer. It is thus possible to obtain a magneto-resistive effect device of improved reliability that enables a structure capable of having a narrowed read gap (the gap between the upper shield and the lower shield) to be adopted to meet the recently demanded ultra-high recording density, allows a stable bias magnetic field to be applied in simple structure, and obtain a stable magneto-resistive effect change.

摘要翻译： 本发明提供了CPP（电流垂直于平面）结构的磁阻效应器件，包括磁阻效应单元，以及位于它们之间的该磁阻效应单元的上屏蔽层和下屏蔽层， 其中感应电流沿堆叠方向施加，其中所述磁阻效应单元包括非磁性金属中间层，以及与夹在其间的非磁性金属中间层堆叠并形成的第一铁磁层和第二铁磁层，其中所述第一 铁磁层和所述第二铁磁层经由非磁性金属中间层交换耦合，使得在没有施加偏压磁场的情况下，它们的磁化彼此反平行，并且上屏蔽层和 下屏蔽层具有相对于其磁化倾斜的倾斜磁化结构 轨道宽度方向，使得通过该倾斜磁化结构的磁化，可以将偏置磁场施加到第一铁磁层和第二铁磁层。 因此，可以获得具有改善的可靠性的磁阻效应装置，使得能够采用能够具有窄的读取间隙（上屏蔽和下屏蔽之间的间隙）的结构来满足最近要求的超高记录 密度，允许以简单的结构施加稳定的偏置磁场，并获得稳定的磁阻效应变化。

公开(公告)号：US20090059442A1

公开(公告)日：2009-03-05

申请号：US12045927

申请日：2008-03-11

申请人： Tomohito MIZUNO ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Koji Shimazawa ,  Tsutomu Chou

发明人： Tomohito MIZUNO ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Koji Shimazawa ,  Tsutomu Chou

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer which is sandwiched between the first magnetic layer and the second magnetic layer, the first non-magnetic intermediate layer producing a magnetoresistance effect between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer which is sandwiched between the second magnetic layer and the third magnetic layer, the second non-magnetic intermediate layer allowing the second magnetic layer and the third magnetic layer to be exchange-coupled such that magnetization directions thereof are anti-parallel to each other under no magnetic field, the stack being adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack, the bias magnetic layer applying a bias magnetic field to the stack in a direction that is perpendicular to the air bearing surface.

摘要翻译： 磁场检测元件包括：堆叠，其包括其磁化方向根据外部磁场而变化的第一，第二和第三磁性层，第二磁性层位于第一磁性层和第三磁性层之间，第一非磁性层， 夹在第一磁性层和第二磁性层之间的磁性中间层，在第一磁性层和第二磁性层之间产生磁阻效应的第一非磁性中间层和第二非磁性中间层， 夹在第二磁性层和第三磁性层之间，第二非磁性中间层允许第二磁性层和第三磁性层交换耦合，使得其磁化方向在无磁场下彼此反平行 ，所述堆叠被适配成使得感测电流沿着这样的方向流动 垂直于其膜表面; 以及偏置磁性层，其设置在所述堆叠的一侧，所述侧面与所述堆叠的空气支承表面相对，所述偏置磁性层沿垂直于所述空气轴承的方向向所述堆叠施加偏置磁场 表面。

公开(公告)号：US06791445B2

公开(公告)日：2004-09-14

申请号：US10078947

申请日：2002-02-19

申请人： Kazuhiko Shibata ,  Takashi Nagasaka ,  Junetsu Tamura ,  Yasuhiko Kitajima ,  Hideharu Moro ,  Tsutomu Chou ,  Tsuneo Suzuki

发明人： Kazuhiko Shibata ,  Takashi Nagasaka ,  Junetsu Tamura ,  Yasuhiko Kitajima ,  Hideharu Moro ,  Tsutomu Chou ,  Tsuneo Suzuki

IPC分类号： H01F2702

CPC分类号： H01F17/04 ,  H01F27/027 ,  H01F41/0246 ,  H01F41/127 ,  H01F2017/046 ,  Y10T29/4902 ,  Y10T29/49071

摘要： A coil-embedded dust core and a method for manufacturing the coil-embedded dust core are provided. The coil-embedded dust core comprises a coil formed from a flat conductor wound in a coil configuration, and a green body consisting of insulating material-coated ferromagnetic metal particles. This results in a coil-embedded dust core more compact in size but with larger inductance. A rectangular wire can be used as the flat conductor. In addition, parts of the coil may function as terminal sections. In this case, the terminal sections of the coil may be formed wider than other part of the coil. The coil-embedded dust core is less prone to joint failures between a coil and terminal sections and to insulation failures of the coil and the terminal section with respect to the magnetic powder. The coil-embedded dust core is more compact while achieving larger inductance.

公开(公告)号：US08498083B2

公开(公告)日：2013-07-30

申请号：US13049195

申请日：2011-03-16

申请人： Hayato Koike ,  Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Hironobu Matsuzawa

发明人： Hayato Koike ,  Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Hironobu Matsuzawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996 ,  Y10T428/1121

摘要： A magneto-resistive effect (MR) element includes first and second magnetic layers where a relative angle formed by magnetization directions changes in response to an external magnetic field and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes a main spacer layer that is composed of gallium oxide as a primary component and a bottom layer that is positioned between the main spacer layer and the first magnetic layer and that is composed of partially oxidized copper as a primary component.

摘要翻译： 磁阻效应（MR）元件包括第一和第二磁性层，其中由磁化方向形成的相对角响应于外部磁场而变化，并且间隔层位于第一磁性层和第二磁性层之间。 第一磁性层定位成比第二磁性层更靠近形成MR元件的衬底。 间隔层包括由氧化镓作为主要成分构成的主间隔层和位于主间隔层和第一磁性层之间并由部分氧化的铜作为主要成分的底层。