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    Polycrystalline diamond compacts including a cemented carbide substrate
    72.
    发明授权
    Polycrystalline diamond compacts including a cemented carbide substrate 有权

    公开(公告)号：US12054992B1

    公开(公告)日：2024-08-06

    申请号：US18129362

    申请日：2023-03-31

    Applicant: US SYNTHETIC CORPORATION

    Inventor： Debkumar Mukhopadhyay

    IPC: B24D18/00 ,  E21B10/42 ,  E21B10/55 ,  E21B10/567

    CPC classification number: E21B10/567 ,  E21B10/42 ,  E21B10/55

    Abstract: Embodiments relate to a polycrystalline diamond compact (“PDC”) including a polycrystalline diamond (“PCD”) table bonded to a cemented carbide substrate including tungsten carbide grains having a fine average grain size to provide one or more of enhanced wear resistance, corrosion resistance, or erosion resistance, and a PDC with enhanced impact resistance. In an embodiment, a PDC includes a cemented carbide substrate having a cobalt-containing cementing constituent cementing tungsten carbide grains together exhibiting an average grain size of about 1.5 μm or less. The substrate includes an interfacial surface and a depletion zone depleted of the cementing constituent that extends inwardly from the interfacial surface to a depth of, for example, about 30 μm to about 60 μm. The PDC includes a PCD table bonded to the interfacial surface of the substrate. The PCD table includes diamond grains bonded together exhibiting an average grain size of about 40 μm or less.

    Polycrystalline diamond compacts including a cemented carbide substrate and applications therefor
    73.
    发明授权
    Polycrystalline diamond compacts including a cemented carbide substrate and applications therefor 有权

    公开(公告)号：US11746601B1

    公开(公告)日：2023-09-05

    申请号：US16585639

    申请日：2019-09-27

    Applicant: US SYNTHETIC CORPORATION

    Inventor： Debkumar Mukhopadhyay ,  Greg Carlos Topham ,  Renato Ventura

    IPC: E21B10/567 ,  B24D18/00 ,  B24D3/06

    CPC classification number: E21B10/567 ,  B24D3/06 ,  B24D18/0009

    Abstract: Embodiments relate to a polycrystalline diamond compact (“PDC”) including a polycrystalline diamond (“PCD”) table having at least two regions and being bonded to a fine grained cemented tungsten carbide substrate. In an embodiment, a PDC includes a cemented carbide substrate having a cobalt-containing cementing constituent cementing tungsten carbide grains together that exhibit an average grain size of about 1.5 μm or less, and a PCD table having at least one upper region including diamond grains exhibiting an upper average grain size and at least one lower region adjacent to the upper region a lower average grain size that may be at least two times greater than the upper average grain size. The cemented carbide substrate includes an interfacial surface and a depletion zone depleted of the cementing constituent that extends inwardly from the interfacial surface to a depth of, for example, about 30 μm to about 60 μm.

    POLYCRYSTALLINE DIAMOND COMPACTS
    75.
    发明申请
    POLYCRYSTALLINE DIAMOND COMPACTS 审中-公开

    公开(公告)号：US20190242193A1

    公开(公告)日：2019-08-08

    申请号：US16385262

    申请日：2019-04-16

    Applicant: US SYNTHETIC CORPORATION

    Inventor： Debkumar Mukhopadhyay ,  Kenneth E. Bertagnolli ,  Jair J. Gonzalez

    IPC: E21B10/573 ,  E21B10/55 ,  B24D3/10 ,  E21B10/567 ,  C22C26/00 ,  B22F7/06

    CPC classification number: E21B10/5735 ,  B22F7/06 ,  B22F2005/001 ,  B24D3/10 ,  C22C26/00 ,  E21B10/55 ,  E21B10/567 ,  Y10T428/24777

    Abstract: In an embodiment, a polycrystalline diamond compact includes a substrate, and a polycrystalline diamond (“PCD”) table bonded to the substrate and including an exterior working surface, at least one lateral surface, and a chamfer extending between the exterior working surface and the at least one lateral surface. The PCD table includes bonded diamond grains defining interstitial regions. The PCD table includes a first region adjacent to the substrate and a second leached region adjacent to the first region and extending inwardly from the exterior working surface to a selected depth. At least a portion of the interstitial regions of the first region include an infiltrant disposed therein. The interstitial regions of the second leached region are substantially free of metal-solvent catalyst. The second region is defined by the exterior working surface, the lateral surface, the chamfer, and a generally horizontal boundary located below the chamfer.

    Methods of fabricating a polycrystalline diamond compact
    76.
    发明授权
    Methods of fabricating a polycrystalline diamond compact 有权

    公开(公告)号：US10287822B2

    公开(公告)日：2019-05-14

    申请号：US13789099

    申请日：2013-03-07

    Applicant: US SYNTHETIC CORPORATION

    Inventor： Kenneth E. Bertagnolli ,  David P. Miess ,  Jiang Qian ,  Jason K. Wiggins ,  Michael A. Vail ,  Debkumar Mukhopadhyay

    IPC: B24D18/00 ,  E21B10/36 ,  B22F7/08 ,  C22C26/00 ,  E21B10/573 ,  F16C33/04

    Abstract: In an embodiment, a method of fabricating a polycrystalline diamond compact is disclosed. The method includes sintering a plurality of diamond particles in the presence of a metal-solvent catalyst to form a polycrystalline diamond body; leaching the polycrystalline diamond body to at least partially remove the metal-solvent catalyst therefrom, thereby forming an at least partially leached polycrystalline diamond body; and subjecting an assembly of the at least partially leached polycrystalline diamond body and a cemented carbide substrate to a high-pressure/high-temperature process at a pressure to infiltrate the at least partially leached polycrystalline diamond body with an infiltrant. The pressure of the high-pressure/high-temperature process is less than that employed in the act of sintering of the plurality of diamond particles.

    Polycrystalline diamond compacts including a cemented carbide substrate and applications therefor
    77.
    发明授权
    Polycrystalline diamond compacts including a cemented carbide substrate and applications therefor 有权

    公开(公告)号：US10030451B1

    公开(公告)日：2018-07-24

    申请号：US14539015

    申请日：2014-11-12

    Applicant: US Synthetic Corporation

    Inventor： Debkumar Mukhopadhyay ,  Greg Carlos Topham ,  Renato Ventura

    IPC: B24D3/02 ,  C09C1/68 ,  C09K3/14 ,  E21B10/567 ,  B24D3/06 ,  B24D18/00

    Abstract: Embodiments relate to a polycrystalline diamond compact (“PDC”) including a polycrystalline diamond (“PCD”) table having at least two regions and being bonded to a fine grained cemented tungsten carbide substrate. In an embodiment, a PDC includes a cemented carbide substrate having a cobalt-containing cementing constituent cementing tungsten carbide grains together that exhibit an average grain size of about 1.5 μm or less, and a PCD table having at least one upper region including diamond grains exhibiting an upper average grain size and at least one lower region adjacent to the upper region a lower average grain size that may be at least two times greater than the upper average grain size. The cemented carbide substrate includes an interfacial surface and a depletion zone depleted of the cementing constituent that extends inwardly from the interfacial surface to a depth of, for example, about 30 μm to about 60 μm.

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