公开(公告)号：US20160027679A1

公开(公告)日：2016-01-28

申请号：US14444131

申请日：2014-07-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Cheng Huang ,  Yu-Ting Li ,  Chih-Hsun Lin ,  Kun-Ju Li ,  Wu-Sian Sie ,  Yi-Liang Liu

IPC: H01L21/683 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/02164 ,  H01L21/02227 ,  H01L21/02318 ,  H01L21/02348 ,  H01L21/3086 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/6835 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/76251 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2221/68381

Abstract: A method for repairing an oxide layer and a method for manufacturing a semiconductor structure applying the same are provided. The method for repairing an oxide layer comprises following steps. First, a carrier having a first area and a second area is provided, wherein a repairing oxide layer is formed on the second area. Then, the carrier is attached to a substrate with an oxide layer to be repaired formed thereon, wherein the carrier and the substrate are attached to each other through the repairing oxide layer and the oxide layer to be repaired. Thereafter, the oxide layer to be repaired is bonded with the repairing oxide layer.

Abstract translation: 提供了修复氧化物层的方法和制造施加氧化物层的半导体结构体的方法。 修复氧化物层的方法包括以下步骤。 首先，提供具有第一区域和第二区域的载体，其中在第二区域上形成修复氧化物层。 然后，载体附着到其上形成有待修复的氧化物层的基板上，其中载体和基板通过修复氧化物层和待修复的氧化物层彼此附接。 此后，将要修复的氧化物层与修复氧化物层结合。

公开(公告)号：US20150325574A1

公开(公告)日：2015-11-12

申请号：US14272672

申请日：2014-05-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Cheng Huang ,  Yu-Ting Li ,  Jen-Chieh Lin ,  Kun-Ju Li ,  Chang-Hung Kung ,  Yue-Han Wu ,  Chih-Chien Liu

IPC: H01L27/088 ,  H01L21/8234 ,  H01L21/3105 ,  H01L29/66

CPC classification number: H01L21/3105 ,  H01L21/31055 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823462 ,  H01L27/088 ,  H01L27/0886 ,  H01L29/66 ,  H01L29/66545 ,  H01L29/6681

Abstract: A method for manufacturing a semiconductor device and a device manufactured by the same are provided. According to the embodiment, a substrate having at least a first area with a plurality of first gates and a second area with a plurality of second gates is provided, wherein the adjacent first gates and the adjacent second gates separated by an insulation, and a top surface of the insulation has a plurality of recesses. Then, a capping layer is formed over the first gate, the second gates and the insulation, and filling the recesses. The capping layer is removed until reaching the top surface of the insulation, thereby forming the insulating depositions filling up the recesses, wherein the upper surfaces of the insulating deposition are substantially aligned with the top surface of the insulation.

Abstract translation: 提供了一种制造半导体器件的方法及其制造方法。 根据实施例，提供具有至少具有多个第一栅极的第一区域和具有多个第二栅极的第二区域的衬底，其中相邻的第一栅极和相邻的第二栅极由绝缘体隔开，并且顶部 绝缘体的表面具有多个凹部。 然后，在第一栅极，第二栅极和绝缘体上形成覆盖层，并填充凹部。 去除覆盖层，直到到达绝缘体的顶表面，从而形成填充凹部的绝缘沉积物，其中绝缘沉积物的上表面基本上与绝缘体的顶表面对准。