公开(公告)号：US08618625B2

公开(公告)日：2013-12-31

申请号：US13038470

申请日：2011-03-02

申请人： Vipulkumar Patel ,  Prakash Gothoskar ,  Mark Webster ,  Christopher J. Lang

发明人： Vipulkumar Patel ,  Prakash Gothoskar ,  Mark Webster ,  Christopher J. Lang

IPC分类号： H01L31/0224

CPC分类号： H01L31/101 ,  H01L31/1085

摘要： A planar, waveguide-based silicon Schottky barrier photodetector includes a third terminal in the form of a field plate to improve the responsivity of the detector. Preferably, a silicide used for the detection region is formed during a processing step where other silicide contact regions are being formed. The field plate is preferably formed as part of the first or second layer of CMOS metallization and is controlled by an applied voltage to modify the electric field in the vicinity of the detector's silicide layer. By modifying the electric field, the responsivity of the device is “tuned” so as to adjust the momentum of “hot” carriers (electrons or holes, depending on the conductivity of the silicon) with respect to the Schottky barrier of the device. The applied potential functions to align with the direction of momentum of the “hot” carriers in the preferred direction “normal” to the silicon-silicide interface, allowing for an increased number to move over the Schottky barrier and add to the generated photocurrent.

摘要翻译： 平面的基于波导的硅肖特基势垒光电检测器包括场板形式的第三端子，以提高检测器的响应度。 优选地，在其中形成其它硅化物接触区域的处理步骤期间形成用于检测区域的硅化物。 场板优选地形成为第一或第二CMOS金属化层的一部分，并且通过施加的电压来控制，以修改检测器硅化物层附近的电场。 通过修改电场，器件的响应度被“调谐”，以相对于器件的肖特基势垒调节“热”载流子（电子或空穴，取决于硅的导电性）的动量。 所施加的电位功能与“硅”载体的优势方向“正常”硅硅化物界面的动量方向相一致，允许增加的数量移动到肖特基势垒上并增加产生的光电流。

公开(公告)号：US07701985B2

公开(公告)日：2010-04-20

申请号：US12291246

申请日：2008-11-06

申请人： Mark Webster ,  David Piede ,  Prakash Gothoskar

发明人： Mark Webster ,  David Piede ,  Prakash Gothoskar

IPC分类号： H01S3/10 ,  H01S3/13

CPC分类号： H01S5/141 ,  H01S5/021 ,  H01S5/02248 ,  H01S5/02268 ,  H01S5/06256

摘要： A silicon-on-insulator (SOI)-based tunable laser is formed to include the gain medium (such as a semiconductor optical amplifier) disposed within a cavity formed within the SOI substrate. A tunable wavelength reflecting element and associated phase matching element are formed on the surface of the SOI structure, with optical waveguides formed in the surface SOI layer providing the communication between these components. The tunable wavelength element is controlled to adjust the optical wavelength. Separate discrete lensing elements may be disposed in the cavity with the gain medium, providing efficient coupling of the optical signal into the SOI waveguides. Alternatively, the gain medium itself may be formed to include spot converting tapers on its endfaces, the tapers used to provide mode matching into the associated optical waveguides.

摘要翻译： 形成绝缘体上硅（SOI）的可调谐激光器以包括设置在形成于SOI衬底内的空腔内的增益介质（例如半导体光放大器）。 在SOI结构的表面上形成可调波长反射元件和相关的相位匹配元件，其中形成在表面SOI层中的光波导提供这些部件之间的连通。 可调波长元件被控制以调节光学波长。 单独的离散透镜元件可以用增益介质设置在空腔中，从而提供光信号到SOI波导的有效耦合。 或者，增益介质本身可以被形成为包括其端面上的点变换锥度，用于向相关联的光波导提供模式匹配的锥度。

公开(公告)号：US20090135861A1

公开(公告)日：2009-05-28

申请号：US12291246

申请日：2008-11-06

申请人： Mark Webster ,  David Piede ,  Prakash Gothoskar

发明人： Mark Webster ,  David Piede ,  Prakash Gothoskar

IPC分类号： H01S3/10

CPC分类号： H01S5/141 ,  H01S5/021 ,  H01S5/02248 ,  H01S5/02268 ,  H01S5/06256

摘要： A silicon-on-insulator (SOI)-based tunable laser is formed to include the gain medium (such as a semiconductor optical amplifier) disposed within a cavity formed within the SOI substrate. A tunable wavelength reflecting element and associated phase matching element are formed on the surface of the SOI structure, with optical waveguides formed in the surface SOI layer providing the communication between these components. The tunable wavelength element is controlled to adjust the optical wavelength. Separate discrete lensing elements may be disposed in the cavity with the gain medium, providing efficient coupling of the optical signal into the SOI waveguides. Alternatively, the gain medium itself may be formed to include spot converting tapers on its endfaces, the tapers used to provide mode matching into the associated optical waveguides.

摘要翻译： 形成绝缘体上硅（SOI）的可调谐激光器以包括设置在形成于SOI衬底内的空腔内的增益介质（例如半导体光放大器）。 在SOI结构的表面上形成可调波长反射元件和相关的相位匹配元件，其中形成在表面SOI层中的光波导提供这些部件之间的连通。 可调波长元件被控制以调节光学波长。 单独的离散透镜元件可以用增益介质设置在空腔中，从而提供光信号到SOI波导的有效耦合。 或者，增益介质本身可以被形成为包括其端面上的点变换锥度，用于向相关联的光波导提供模式匹配的锥度。

公开(公告)号：US20080089634A1

公开(公告)日：2008-04-17

申请号：US11973440

申请日：2007-10-09

申请人： Paulius Mosinskis ,  Robert Montgomery ,  Prakash Gothoskar

发明人： Paulius Mosinskis ,  Robert Montgomery ,  Prakash Gothoskar

IPC分类号： G02F1/035

CPC分类号： G02F1/2255 ,  G02F1/0121 ,  H04B10/5051 ,  H04B10/50575

摘要： An optical modulator is formed to include an adjustable drive arrangement for dynamically adjusting the effective length of the optical signals path(s) within the modulator. Each modulator arm is partitioned into a plurality of segments, with each segment coupled to a separate electrical signal driver. Therefore, the effective length of each modulator arm will be a function of the number of drivers that are activated for each arm at any given point in time. A feedback arrangement may be used with the plurality of drivers to dynamically adjust the operation of the modulator by measuring the extinction ratio as a function of optical power, turning “on” or “off” individual drivers accordingly.

摘要翻译： 光学调制器被形成为包括可调驱动装置，用于动态地调节调制器内的光信号路径的有效长度。 每个调制器臂被分割成多个段，每个段耦合到单独的电信号驱动器。 因此，每个调制器臂的有效长度将是在任何给定时间点为每个臂激活的驱动器的数量的函数。 反馈装置可以与多个驱动器一起使用，以通过测量作为光功率的函数的消光比来相应地“打开”或“关闭”个别驱动器来动态地调节调制器的操作。