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公开(公告)号：US07706644B2
公开(公告)日：2010-04-27
申请号：US12218367
申请日：2008-07-15
申请人： Mark Webster , Prakash Gothoskar , Vipulkumar Patel , David Piede
发明人： Mark Webster , Prakash Gothoskar , Vipulkumar Patel , David Piede
IPC分类号： G02B6/26
CPC分类号： G02B6/30 , G02B6/3598 , G02B6/3636 , G02B6/3652 , G02B6/3692 , G02B6/4249
摘要： One or more nanotaper coupling waveguides formed within an optical substrate allows for straightforward, reproducible offset launch conditions to be achieved between an incoming signal and the core region of a multimode fiber (which may be disposed along an alignment fixture formed in the optical substrate), fiber array or other multimode waveguiding structure. Offset launching of a single mode signal into a multimode fiber couples the signal into favorable spatial modes which reduce the presence of differential mode dispersion along the fiber. This approach to providing single mode signal coupling into legacy multimode fiber is considered to be an improvement over the prior art which required the use of an interface element between a single mode fiber and multimode fiber, limiting the number of propagating signals and applications for the legacy multimode fiber. An optical switch may be used to select the specific nanotaper(s) for coupling into the multimode fiber.
摘要翻译： 形成在光学衬底内的一个或多个纳米锥耦合波导允许在多模光纤（其可以沿着形成在光学衬底中的对准夹具设置）的入射信号和芯区域之间实现简单，可再现的偏移发射条件， 光纤阵列或其他多模波导结构。 偏移将单模信号发射到多模光纤中将信号耦合到有利的空间模式，这降低了沿着光纤的差分色散的存在。 将单模信号耦合提供给传统多模光纤的这种方法被认为是对需要使用单模光纤和多模光纤之间的接口元件的现有技术的改进，限制了传播信号的数量和遗留的应用 多模光纤 可以使用光学开关来选择用于耦合到多模光纤的特定纳米锥。
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公开(公告)号：US20110222812A1
公开(公告)日：2011-09-15
申请号：US13029342
申请日：2011-02-17
申请人： Mark Webster , Vipulkumar Patel , Prakash Gothoskar , David Piede
发明人： Mark Webster , Vipulkumar Patel , Prakash Gothoskar , David Piede
IPC分类号： G02F1/01
摘要： A high speed silicon-based optical modulator with control of the dopant profiles in the body and gate regions of the device reduces the series resistance of the structure without incurring substantial optical power loss. That is, the use of increased dopant values in areas beyond the active region will allow for the series resistance to be reduced (and thus increase the modulating speed of the device) without incurring too large a penalty in signal loss. The dopant profiles within the gate and body regions are tailored to exhibit an intermediate value between the high dopant concentration in the contact areas and the low dopant concentration in the carrier integration window area.
摘要翻译： 具有控制器件的主体和栅极区域中的掺杂剂分布的高速硅基光学调制器降低了结构的串联电阻而不会引起实质的光功率损耗。 也就是说，在有源区域之外的区域中使用增加的掺杂剂值将允许降低串联电阻（从而增加器件的调制速度），而不会在信号损失中造成太大的惩罚。 调整栅极和体区内的掺杂剂分布，以显示接触区域中的高掺杂剂浓度与载流子集成窗口区域中的低掺杂剂浓度之间的中间值。
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公开(公告)号：US20090103850A1
公开(公告)日：2009-04-23
申请号：US12287366
申请日：2008-10-08
IPC分类号： G02F1/035
CPC分类号： G02F1/0121 , G02F1/2255 , G02F1/2257 , G02F2001/0152
摘要： A silicon-insulator-silicon capacitive (SISCAP) optical modulator is configured to provide analog operation for applications which previously required the use of relatively large, power-consuming and expensive lithium niobate devices. An MZI-based SISCAP modulator (preferably a balanced arrangement with a SISCAP device on each arm) is responsive to an incoming high frequency electrical signal and is biased in a region where the capacitance of the device is essentially constant and the transform function of the MZI is linear.
摘要翻译： 硅 - 绝缘体 - 硅电容（SISCAP）光调制器被配置为为先前需要使用相对较大，耗电和昂贵的铌酸锂器件的应用提供模拟操作。 基于MZI的SISCAP调制器（优选地，在每个臂上具有SISCAP器件的平衡布置）响应于输入的高频电信号，并且被偏置在器件的电容基本上恒定的区域中，并且MZI的变换函数 是线性的
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公开(公告)号：US07701985B2
公开(公告)日：2010-04-20
申请号：US12291246
申请日：2008-11-06
申请人： Mark Webster , David Piede , Prakash Gothoskar
发明人： Mark Webster , David Piede , Prakash Gothoskar
CPC分类号： H01S5/141 , H01S5/021 , H01S5/02248 , H01S5/02268 , H01S5/06256
摘要： A silicon-on-insulator (SOI)-based tunable laser is formed to include the gain medium (such as a semiconductor optical amplifier) disposed within a cavity formed within the SOI substrate. A tunable wavelength reflecting element and associated phase matching element are formed on the surface of the SOI structure, with optical waveguides formed in the surface SOI layer providing the communication between these components. The tunable wavelength element is controlled to adjust the optical wavelength. Separate discrete lensing elements may be disposed in the cavity with the gain medium, providing efficient coupling of the optical signal into the SOI waveguides. Alternatively, the gain medium itself may be formed to include spot converting tapers on its endfaces, the tapers used to provide mode matching into the associated optical waveguides.
摘要翻译： 形成绝缘体上硅（SOI）的可调谐激光器以包括设置在形成于SOI衬底内的空腔内的增益介质（例如半导体光放大器）。 在SOI结构的表面上形成可调波长反射元件和相关的相位匹配元件，其中形成在表面SOI层中的光波导提供这些部件之间的连通。 可调波长元件被控制以调节光学波长。 单独的离散透镜元件可以用增益介质设置在空腔中，从而提供光信号到SOI波导的有效耦合。 或者，增益介质本身可以被形成为包括其端面上的点变换锥度，用于向相关联的光波导提供模式匹配的锥度。
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5.发明申请Coupling between free space and optical waveguide using etched coupling surfaces 有权使用蚀刻的耦合表面在自由空间和光波导之间耦合公开(公告)号：US20090162013A1
公开(公告)日：2009-06-25
申请号：US12316540
申请日：2008-12-11
申请人： Mark Webster , Vipulkumar Patel , Mary Nadeau , Prakash Gothoskar , David Piede
发明人： Mark Webster , Vipulkumar Patel , Mary Nadeau , Prakash Gothoskar , David Piede
IPC分类号： G02B6/42
摘要： A plasma-based etching process is used to specifically shape the endface of an optical substrate supporting an optical waveguide into a contoured facet which will improve coupling efficiency between the waveguide and a free space optical signal. The ability to use standard photolithographic techniques to pattern and etch the optical endface facet allows for virtually any desired facet geometry to be formed—and replicated across the surface of a wafer for the entire group of assemblies being fabricated. A lens may be etched into the endface using a properly-defined photolithographic mask, with the focal point of the lens selected with respect to the parameters of the optical waveguide and the propagating free space signal. Alternatively, an angled facet may be formed along the endface, with the angle sufficient to re-direct reflected/scattered signals away from the optical axis.
摘要翻译： 使用基于等离子体的蚀刻工艺来将支撑光波导的光学基板的端面特别地成形为轮廓刻面，这将提高波导与自由空间光信号之间的耦合效率。 使用标准光刻技术对光学端面小平面进行图案化和刻蚀的能力允许形成任何所需的刻面几何形状，并跨越制造的整组组件在晶片的表面上复制。 可以使用适当限定的光刻掩模将透镜蚀刻到端面中，相对于光波导的参数和传播的自由空间信号选择透镜的焦点。 或者，可以沿着端面形成成角度的小面，其角度足以将反射/散射信号重新引导远离光轴。
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6.发明授权Coupling between free space and optical waveguide using etched coupling surfaces 有权使用蚀刻的耦合表面在自由空间和光波导之间耦合公开(公告)号：US08121450B2
公开(公告)日：2012-02-21
申请号：US12316540
申请日：2008-12-11
申请人： Mark Webster , Vipulkumar Patel , Mary Nadeau , Prakash Gothoskar , David Piede
发明人： Mark Webster , Vipulkumar Patel , Mary Nadeau , Prakash Gothoskar , David Piede
摘要： A plasma-based etching process is used to specifically shape the endface of an optical substrate supporting an optical waveguide into a contoured facet which will improve coupling efficiency between the waveguide and a free space optical signal. The ability to use standard photolithographic techniques to pattern and etch the optical endface facet allows for virtually any desired facet geometry to be formed—and replicated across the surface of a wafer for the entire group of assemblies being fabricated. A lens may be etched into the endface using a properly-defined photolithographic mask, with the focal point of the lens selected with respect to the parameters of the optical waveguide and the propagating free space signal. Alternatively, an angled facet may be formed along the endface, with the angle sufficient to re-direct reflected/scattered signals away from the optical axis.
摘要翻译： 使用基于等离子体的蚀刻工艺来将支撑光波导的光学基板的端面特别地成形为轮廓刻面，这将提高波导与自由空间光信号之间的耦合效率。 使用标准光刻技术对光学端面小平面进行图案化和刻蚀的能力允许形成任何所需的刻面几何形状，并跨越制造的整组组件在晶片的表面上复制。 可以使用适当限定的光刻掩模将透镜蚀刻到端面中，相对于光波导的参数和传播的自由空间信号选择透镜的焦点。 或者，可以沿着端面形成成角度的小面，其角度足以将反射/散射信号重新引导远离光轴。
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公开(公告)号：US07657130B2
公开(公告)日：2010-02-02
申请号：US12287366
申请日：2008-10-08
CPC分类号： G02F1/0121 , G02F1/2255 , G02F1/2257 , G02F2001/0152
摘要： A silicon-insulator-silicon capacitive (SISCAP) optical modulator is configured to provide analog operation for applications which previously required the use of relatively large, power-consuming and expensive lithium niobate devices. An MZI-based SISCAP modulator (preferably a balanced arrangement with a SISCAP device on each arm) is responsive to an incoming high frequency electrical signal and is biased in a region where the capacitance of the device is essentially constant and the transform function of the MZI is linear.
摘要翻译： 硅 - 绝缘体 - 硅电容（SISCAP）光调制器被配置为为先前需要使用相对较大，耗电和昂贵的铌酸锂器件的应用提供模拟操作。 基于MZI的SISCAP调制器（优选地，在每个臂上具有SISCAP器件的平衡布置）响应于输入的高频电信号，并且被偏置在器件的电容基本上恒定的区域中，并且MZI的变换函数 是线性的
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公开(公告)号：US20090123114A1
公开(公告)日：2009-05-14
申请号：US12218367
申请日：2008-07-15
申请人： Mark Webster , Prakash Gothoskar , Vipulkumar Patel , David Piede
发明人： Mark Webster , Prakash Gothoskar , Vipulkumar Patel , David Piede
IPC分类号： G02B6/35
CPC分类号： G02B6/30 , G02B6/3598 , G02B6/3636 , G02B6/3652 , G02B6/3692 , G02B6/4249
摘要： One or more nanotaper coupling waveguides formed within an optical substrate allows for straightforward, reproducible offset launch conditions to be achieved between an incoming signal and the core region of a multimode fiber (which may be disposed along an alignment fixture formed in the optical substrate), fiber array or other multimode waveguiding structure. Offset launching of a single mode signal into a multimode fiber couples the signal into favorable spatial modes which reduce the presence of differential mode dispersion along the fiber. This approach to providing single mode signal coupling into legacy multimode fiber is considered to be an improvement over the prior art which required the use of an interface element between a single mode fiber and multimode fiber, limiting the number of propagating signals and applications for the legacy multimode fiber. An optical switch may be used to select the specific nanotaper(s) for coupling into the multimode fiber.
摘要翻译： 形成在光学衬底内的一个或多个纳米锥耦合波导允许在多模光纤（其可以沿着形成在光学衬底中的对准夹具设置）的入射信号和芯区域之间实现简单，可再现的偏移发射条件， 光纤阵列或其他多模波导结构。 偏移将单模信号发射到多模光纤中将信号耦合到有利的空间模式，这降低了沿着光纤的差分色散的存在。 将单模信号耦合提供给传统多模光纤的这种方法被认为是对需要使用单模光纤和多模光纤之间的接口元件的现有技术的改进，限制了传播信号的数量和遗留的应用 多模光纤 可以使用光学开关来选择用于耦合到多模光纤的特定纳米锥。
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公开(公告)号：US08363986B2
公开(公告)日：2013-01-29
申请号：US13029342
申请日：2011-02-17
申请人： Mark Webster , Vipulkumar Patel , Prakash Gothoskar , David Piede
发明人： Mark Webster , Vipulkumar Patel , Prakash Gothoskar , David Piede
摘要： A high speed silicon-based optical modulator with control of the dopant profiles in the body and gate regions of the device reduces the series resistance of the structure without incurring substantial optical power loss. That is, the use of increased dopant values in areas beyond the active region will allow for the series resistance to be reduced (and thus increase the modulating speed of the device) without incurring too large a penalty in signal loss. The dopant profiles within the gate and body regions are tailored to exhibit an intermediate value between the high dopant concentration in the contact areas and the low dopant concentration in the carrier integration window area.
摘要翻译： 具有控制器件的主体和栅极区域中的掺杂剂分布的高速硅基光学调制器降低了结构的串联电阻而不会引起实质的光功率损耗。 也就是说，在有源区域之外的区域中使用增加的掺杂剂值将允许降低串联电阻（从而增加器件的调制速度），而不会在信号损失中造成太大的惩罚。 调整栅极和体区内的掺杂剂分布，以显示接触区域中的高掺杂剂浓度与载流子集成窗口区域中的低掺杂剂浓度之间的中间值。
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公开(公告)号：US20090135861A1
公开(公告)日：2009-05-28
申请号：US12291246
申请日：2008-11-06
申请人： Mark Webster , David Piede , Prakash Gothoskar
发明人： Mark Webster , David Piede , Prakash Gothoskar
IPC分类号： H01S3/10
CPC分类号： H01S5/141 , H01S5/021 , H01S5/02248 , H01S5/02268 , H01S5/06256
摘要： A silicon-on-insulator (SOI)-based tunable laser is formed to include the gain medium (such as a semiconductor optical amplifier) disposed within a cavity formed within the SOI substrate. A tunable wavelength reflecting element and associated phase matching element are formed on the surface of the SOI structure, with optical waveguides formed in the surface SOI layer providing the communication between these components. The tunable wavelength element is controlled to adjust the optical wavelength. Separate discrete lensing elements may be disposed in the cavity with the gain medium, providing efficient coupling of the optical signal into the SOI waveguides. Alternatively, the gain medium itself may be formed to include spot converting tapers on its endfaces, the tapers used to provide mode matching into the associated optical waveguides.
摘要翻译： 形成绝缘体上硅（SOI）的可调谐激光器以包括设置在形成于SOI衬底内的空腔内的增益介质（例如半导体光放大器）。 在SOI结构的表面上形成可调波长反射元件和相关的相位匹配元件，其中形成在表面SOI层中的光波导提供这些部件之间的连通。 可调波长元件被控制以调节光学波长。 单独的离散透镜元件可以用增益介质设置在空腔中，从而提供光信号到SOI波导的有效耦合。 或者，增益介质本身可以被形成为包括其端面上的点变换锥度，用于向相关联的光波导提供模式匹配的锥度。
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