摘要:
A video camera includes a gate circuit for extracting a sharpness signal relative to an area which is set in a portion of a picture, a focus adjusting device for performing focus adjustment on the basis of the sharpness signal relative to the area, and an area selecting circuit for controlling the gate circuit to vary the area in size and determining a size of the area during a driving of a variator lens in accordance with a size of the area and a focal length used before the driving of the variator lens.
摘要:
It is an object of the present invention to provide an optical apparatus which can avoid the movement of an unnatural image by an image-shake correction function. An optical apparatus comprises a controller which performs an image-shake correcting control based on a signal generated by using an output of a shake detector which detects a shake. The controller performs filtering processing and integrating processing to the signal. The controller changes a cutoff frequency in the filtering processing and the integration constant according to the information on a focal length of an image-taking optical system which forms an object image and information on the object distance.
摘要:
An automatic focus adjusting device in which a distance measuring area is set from a plurality of distance measuring areas including a first distance measuring area and a second distance measuring area which differs in size from the first distance measuring area. A state of focus is discriminated in a distance measuring area before a focus adjusting operation is started by driving an optical element for focus adjustment when the optical element is in an in-focus state, and on the basis of the discrimination, a distance measuring area to be used after the focus adjusting operation is started is selected from the first distance area and the second distance area.
摘要:
An image-shake correcting device includes structure for detecting a vibration, and a device for correcting a motion of an image due to the detected vibration. Limiting circuitry is provided for limiting a frequency response of an output of the detecting structure, and switching structure is provided for switching the correcting device between a stopping state and a driving state. Control circuitry is provided for changing a frequency response characteristic of the limiting circuitry when the correcting device is switched from the stopping state to the driving state by the switching structure.
摘要:
A manufacturing method of a semiconductor device of the present invention comprises the steps of forming an amorphous layer on an upper layer of the impurity diffusion layer made of silicon by virtue of ion-implantation, forming a cobalt film on the impurity diffusion layer, forming a cobalt silicide layer made of Co.sub.2 Si or CoSi on an upper layer of the amorphous layer at a low temperature by reacting the cobalt film to silicon in the impurity diffusion layer in virtue of first annealing, then removing the cobalt film which has not reacted, and changing Co.sub.2 Si or CoSi constituting the cobalt silicide layer into CoSi.sub.2 to have low resistance and also rendering the cobalt silicide layer to enter into a depth identical to or deeper than an initial depth of the amorphous layer in virtue of second annealing.
摘要:
A specimen measurement apparatus and method includes sequentially moving individual specimens, radiating first and second radiation beams on first and second positions spaced apart from each other in a moving direction of the specimens, time-serially detecting light components emerging from specimens passing the first and second positions using the same light detector, and an optical selector, arranged in an optical path between the radiation positions and a light detector, for, when a specimen passes the first position, selectively guiding a light component having a first optical characteristic emerging from the specimen to the light detector, and for, when the specimen passes the second position, selectively guiding a light component having a second optical characteristic emerging from the specimen to the light detector.
摘要:
On a semiconductor substrate with an exposed silicon region, a metal layer such as Co is deposited and a silicide layer is formed by heat treatment. Thereafter, a metal layer such as Ni and a silicon layer are deposited, and one of them is patterned. The metal layer and silicon layer are heated for silicification to form a local interconnect. A semiconductor device manufacturing method is provided which uses salicide technique and can form a local interconnect of good quality.
摘要:
A laser beam from a light source having a laser beam emitting portion and a laser output mirror is applied to an irradiation area in a flow cell by an irradiation optical system. Scattered light and fluorescence radiated by particles flowing through the flow cell are detected by a detector. The vicinity of the laser output mirror which is the fulcrum of the fluctuation of the pointing of the laser beam and the irradiation area are made optically substantially conjugate with each other, and even if the pointing of the laser beam fluctuates, measurement can be effected accurately without being affected thereby.
摘要:
The present invention discloses a dental restorative material comprising 10-50 mass % of (A) a polymerizable monomer, 5-80 mass % of (B) an organic-inorganic composite filler which is prepared by dispersing an inorganic fine filler having an average particle diameter of 1 μm or smaller in an organic matrix and has an average particle diameter of 5.0-50 μm, and 10-60 mass % of (C) a third component, i.e., an inorganic filler having an average particle diameter of 1.1-5.0 μm, wherein the absolute value of the difference between the refractive index [nC] of the inorganic filler (C) and the refractive index [nB] of the organic-inorganic composite filler (B) (i.e., |nC−nB|) is 0.005-0.07 at 32° C. and the absolute value of the difference between the refractive index [nA] of the cured product of the polymerizable monomer (A) and the refractive index [nC] of the inorganic filler (C) (i.e., |nA−nC|) is 0.005-0.05 at 32° C.
摘要:
There is provided a projection device including a device main body, and an open/close unit having a projection lens, the open/close unit being connected to the device main body in a manner openable and closable about an open/close axis formed in a vertical direction of the device main body and in a manner rotatable about a rotation axis that is perpendicular to the open/close axis. The projection lens is, in a closed state in which the open/close unit is closed with respect to the device main body such that the projection lens faces outward, provided on an upper side of the rotation axis of the open/close unit.