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    METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATION THEREOF
    74.
    发明申请
    METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATION THEREOF 有权
    金属氧化物半导体场效应晶体管及其制造方法

    公开(公告)号：US20070254421A1

    公开(公告)日：2007-11-01

    申请号：US11308718

    申请日：2006-04-26

    申请人： Chen-Hua Tsai ,  Bang-Chiang Lan ,  Yu-Hsin Lin ,  Yi-Cheng Liu ,  Cheng-Tzung Tsai

    发明人： Chen-Hua Tsai ,  Bang-Chiang Lan ,  Yu-Hsin Lin ,  Yi-Cheng Liu ,  Cheng-Tzung Tsai

    IPC分类号： H01L21/8234 ,  H01L21/336

    CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7834 ,  Y10S438/931 ,  Y10S438/933 ,  Y10S438/938

    摘要： A method of fabrication of a metal oxide semiconductor field effect transistor is disclosed. At first, a substrate on which a gate structure is formed is provided. Afterward, a portion of the substrate is removed to form a first recess in the substrate at both ends of the gate structure. Additionally, a source/drain extension layer is deposited in the first recess and a plurality of spacers are formed at both ends of the gate structure. Subsequently, a portion of the source/drain extension and the substrate are removed to form a second recess in the source/drain extension and a portion of the substrate outside of the spacer. In addition, a source/drain layer is deposited in the second recess. Because the source/drain extension and the source/drain layer have specific materials and structures, short channel effect is improved and the efficiency of the metal oxide semiconductor field effect transistor is improved.

    摘要翻译： 公开了一种制造金属氧化物半导体场效应晶体管的方法。 首先，设置形成有栅极结构的基板。 之后，去除衬底的一部分以在栅极结构的两端形成衬底中的第一凹部。 此外，源极/漏极延伸层沉积在第一凹槽中，并且在栅极结构的两端形成多个间隔物。 随后，去除源极/漏极延伸部分和衬底的一部分以在源极/漏极延伸部中形成第二凹部，并且在衬垫的外部形成衬底的一部分。 另外，源极/漏极层沉积在第二凹部中。 由于源极/漏极延伸部和源极/漏极层具有特定的材料和结构，因此提高了沟道效应，提高了金属氧化物半导体场效应晶体管的效率。