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    Method of fabrication of metal oxide semiconductor field effect transistor
    1.
    发明授权
    Method of fabrication of metal oxide semiconductor field effect transistor 有权
    金属氧化物半导体场效应晶体管的制造方法

    公开(公告)号：US08058133B2

    公开(公告)日：2011-11-15

    申请号：US12273517

    申请日：2008-11-18

    申请人： Chen-Hua Tsai ,  Bang-Chiang Lan ,  Yu-Hsin Lin ,  Yi-Cheng Liu ,  Cheng-Tzung Tsai

    发明人： Chen-Hua Tsai ,  Bang-Chiang Lan ,  Yu-Hsin Lin ,  Yi-Cheng Liu ,  Cheng-Tzung Tsai

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7834 ,  Y10S438/931 ,  Y10S438/933 ,  Y10S438/938

    摘要： A method of fabrication of a metal oxide semiconductor field effect transistor includes first providing a substrate on which a gate structure is formed. Afterwards, a portion of the substrate is removed to form a first recess in the substrate at both ends of the gate structure. Additionally, a source/drain extension layer is deposited in the first recess and a number of spacers are formed at both ends of the gate structure. Subsequently, a portion of the source/drain extension and the substrate are removed to form a second recess in the source/drain extension and a portion of the substrate outside of the spacer. In addition, a source/drain layer is deposited in the second recess. Because the source/drain extension and the source/drain layer have specific materials and structures, short channel effect is improved and the efficiency of the metal oxide semiconductor field effect transistor is improved.

    摘要翻译： 制造金属氧化物半导体场效应晶体管的方法包括首先提供其上形成有栅极结构的衬底。 之后，去除衬底的一部分以在栅极结构的两端形成衬底中的第一凹槽。 另外，源极/漏极延伸层沉积在第一凹槽中，并且在栅极结构的两端形成多个间隔物。 随后，去除源极/漏极延伸部分和衬底的一部分以在源极/漏极延伸部中形成第二凹部，并且在衬垫的外部形成衬底的一部分。 另外，源极/漏极层沉积在第二凹部中。 由于源极/漏极延伸部和源极/漏极层具有特定的材料和结构，因此提高了沟道效应，提高了金属氧化物半导体场效应晶体管的效率。

    METHOD OF FABRICATION OF METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
    2.
    发明申请
    METHOD OF FABRICATION OF METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR 审中-公开
    金属氧化物半导体场效应晶体管的制备方法

    公开(公告)号：US20120199849A1

    公开(公告)日：2012-08-09

    申请号：US13446124

    申请日：2012-04-13

    申请人： Chen-Hua Tsai ,  Bang-Chiang Lan ,  Yu-Hsin Lin ,  Yi-Cheng Liu ,  Cheng-Tzung Tsai

    发明人： Chen-Hua Tsai ,  Bang-Chiang Lan ,  Yu-Hsin Lin ,  Yi-Cheng Liu ,  Cheng-Tzung Tsai

    IPC分类号： H01L29/161 ,  H01L29/772

    CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7834 ,  Y10S438/931 ,  Y10S438/933 ,  Y10S438/938

    摘要： A method of fabrication of a metal oxide semiconductor field effect transistor includes first providing a substrate on which a gate structure is formed. Afterwards, a portion of the substrate is removed to form a first recess in the substrate at both ends of the gate structure. Additionally, a source/drain extension layer is deposited in the first recess and a number of spacers are formed at both ends of the gate structure. Subsequently, a portion of the source/drain extension and the substrate are removed to form a second recess in the source/drain extension and a portion of the substrate outside of the spacer. In addition, a source/drain layer is deposited in the second recess. Because the source/drain extension and the source/drain layer have specific materials and structures, short channel effect is improved and the efficiency of the metal oxide semiconductor field effect transistor is improved.

    摘要翻译： 制造金属氧化物半导体场效应晶体管的方法包括首先提供其上形成有栅极结构的衬底。 之后，去除衬底的一部分以在栅极结构的两端形成衬底中的第一凹槽。 另外，源极/漏极延伸层沉积在第一凹槽中，并且在栅极结构的两端形成多个间隔物。 随后，去除源极/漏极延伸部分和衬底的一部分以在源极/漏极延伸部中形成第二凹部，并且在衬垫的外部形成衬底的一部分。 另外，源极/漏极层沉积在第二凹部中。 由于源极/漏极延伸部和源极/漏极层具有特定的材料和结构，因此提高了沟道效应，提高了金属氧化物半导体场效应晶体管的效率。

    Metal oxide semiconductor field effect transistor with strained source/drain extension layer
    3.
    发明授权
    Metal oxide semiconductor field effect transistor with strained source/drain extension layer 有权
    具有应变源极/漏极延伸层的金属氧化物半导体场效应晶体管

    公开(公告)号：US08207523B2

    公开(公告)日：2012-06-26

    申请号：US11308718

    申请日：2006-04-26

    申请人： Chen-Hua Tsai ,  Bang-Chiang Lan ,  Yu-Hsin Lin ,  Yi-Cheng Liu ,  Cheng-Tzung Tsai

    发明人： Chen-Hua Tsai ,  Bang-Chiang Lan ,  Yu-Hsin Lin ,  Yi-Cheng Liu ,  Cheng-Tzung Tsai

    IPC分类号： H01L29/06 ,  H01L31/00

    CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7834 ,  Y10S438/931 ,  Y10S438/933 ,  Y10S438/938

    摘要： A method of fabrication of a metal oxide semiconductor field effect transistor is disclosed. At first, a substrate on which a gate structure is formed is provided. Afterward, a portion of the substrate is removed to form a first recess in the substrate at both ends of the gate structure. Additionally, a source/drain extension layer is deposited in the first recess and a plurality of spacers are formed at both ends of the gate structure. Subsequently, a portion of the source/drain extension and the substrate are removed to form a second recess in the source/drain extension and a portion of the substrate outside of the spacer. In addition, a source/drain layer is deposited in the second recess. Because the source/drain extension and the source/drain layer have specific materials and structures, short channel effect is improved and the efficiency of the metal oxide semiconductor field effect transistor is improved.

    摘要翻译： 公开了一种制造金属氧化物半导体场效应晶体管的方法。 首先，设置形成有栅极结构的基板。 之后，去除衬底的一部分以在栅极结构的两端形成衬底中的第一凹部。 此外，源极/漏极延伸层沉积在第一凹槽中，并且在栅极结构的两端形成多个间隔物。 随后，去除源极/漏极延伸部分和衬底的一部分以在源极/漏极延伸部中形成第二凹部，并且在衬垫的外部形成衬底的一部分。 另外，源极/漏极层沉积在第二凹部中。 由于源极/漏极延伸部和源极/漏极层具有特定的材料和结构，因此提高了沟道效应，提高了金属氧化物半导体场效应晶体管的效率。

    METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATION THEREOF
    4.
    发明申请
    METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATION THEREOF 有权
    金属氧化物半导体场效应晶体管及其制造方法

    公开(公告)号：US20070254421A1

    公开(公告)日：2007-11-01

    申请号：US11308718

    申请日：2006-04-26

    申请人： Chen-Hua Tsai ,  Bang-Chiang Lan ,  Yu-Hsin Lin ,  Yi-Cheng Liu ,  Cheng-Tzung Tsai

    发明人： Chen-Hua Tsai ,  Bang-Chiang Lan ,  Yu-Hsin Lin ,  Yi-Cheng Liu ,  Cheng-Tzung Tsai

    IPC分类号： H01L21/8234 ,  H01L21/336

    CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7834 ,  Y10S438/931 ,  Y10S438/933 ,  Y10S438/938

    摘要： A method of fabrication of a metal oxide semiconductor field effect transistor is disclosed. At first, a substrate on which a gate structure is formed is provided. Afterward, a portion of the substrate is removed to form a first recess in the substrate at both ends of the gate structure. Additionally, a source/drain extension layer is deposited in the first recess and a plurality of spacers are formed at both ends of the gate structure. Subsequently, a portion of the source/drain extension and the substrate are removed to form a second recess in the source/drain extension and a portion of the substrate outside of the spacer. In addition, a source/drain layer is deposited in the second recess. Because the source/drain extension and the source/drain layer have specific materials and structures, short channel effect is improved and the efficiency of the metal oxide semiconductor field effect transistor is improved.

    摘要翻译： 公开了一种制造金属氧化物半导体场效应晶体管的方法。 首先，设置形成有栅极结构的基板。 之后，去除衬底的一部分以在栅极结构的两端形成衬底中的第一凹部。 此外，源极/漏极延伸层沉积在第一凹槽中，并且在栅极结构的两端形成多个间隔物。 随后，去除源极/漏极延伸部分和衬底的一部分以在源极/漏极延伸部中形成第二凹部，并且在衬垫的外部形成衬底的一部分。 另外，源极/漏极层沉积在第二凹部中。 由于源极/漏极延伸部和源极/漏极层具有特定的材料和结构，因此提高了沟道效应，提高了金属氧化物半导体场效应晶体管的效率。

    METHOD OF FABRICATION OF METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
    5.
    发明申请
    METHOD OF FABRICATION OF METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR 有权
    金属氧化物半导体场效应晶体管的制备方法

    公开(公告)号：US20090068810A1

    公开(公告)日：2009-03-12

    申请号：US12273517

    申请日：2008-11-18

    申请人： Chen-Hua Tsai ,  Bang-Chiang Lan ,  Yu-Hsin Lin ,  Yi-Cheng Liu ,  Cheng-Tzung Tsai

    发明人： Chen-Hua Tsai ,  Bang-Chiang Lan ,  Yu-Hsin Lin ,  Yi-Cheng Liu ,  Cheng-Tzung Tsai

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7834 ,  Y10S438/931 ,  Y10S438/933 ,  Y10S438/938

    摘要： A method of fabrication of a metal oxide semiconductor field effect transistor includes first providing a substrate on which a gate structure is formed. Afterwards, a portion of the substrate is removed to form a first recess in the substrate at both ends of the gate structure. Additionally, a source/drain extension layer is deposited in the first recess and a number of spacers are formed at both ends of the gate structure. Subsequently, a portion of the source/drain extension and the substrate are removed to form a second recess in the source/drain extension and a portion of the substrate outside of the spacer. In addition, a source/drain layer is deposited in the second recess. Because the source/drain extension and the source/drain layer have specific materials and structures, short channel effect is improved and the efficiency of the metal oxide semiconductor field effect transistor is improved.

    摘要翻译： 制造金属氧化物半导体场效应晶体管的方法包括首先提供其上形成有栅极结构的衬底。 之后，去除衬底的一部分以在栅极结构的两端形成衬底中的第一凹槽。 另外，源极/漏极延伸层沉积在第一凹槽中，并且在栅极结构的两端形成多个间隔物。 随后，去除源极/漏极延伸部分和衬底的一部分以在源极/漏极延伸部中形成第二凹部，并且在衬垫的外部形成衬底的一部分。 另外，源极/漏极层沉积在第二凹部中。 由于源极/漏极延伸部和源极/漏极层具有特定的材料和结构，因此提高了沟道效应，提高了金属氧化物半导体场效应晶体管的效率。

    Operational amplifier circuits
    9.
    发明授权
    Operational amplifier circuits 有权
    运算放大器电路

    公开(公告)号：US08890611B2

    公开(公告)日：2014-11-18

    申请号：US13612784

    申请日：2012-09-12

    申请人： Hung-Chieh Tsai ,  Chi-Lun Lo ,  Chen-Yen Ho ,  Yu-Hsin Lin

    发明人： Hung-Chieh Tsai ,  Chi-Lun Lo ,  Chen-Yen Ho ,  Yu-Hsin Lin

    IPC分类号： H03F3/45 ,  H03F3/193 ,  H03F1/14 ,  H03F1/32 ,  H03F3/30

    CPC分类号： H03F3/45179 ,  H03F1/14 ,  H03F1/3211 ,  H03F1/483 ,  H03F3/193 ,  H03F3/3023 ,  H03F3/45 ,  H03F3/45076 ,  H03F3/45188 ,  H03F2200/36 ,  H03F2203/45222 ,  H03F2203/45521 ,  H03F2203/45526 ,  H03F2203/45626

    摘要： An operational amplifier circuit includes a first stage amplifier circuit, a second stage amplifier circuit and a first feedforward circuit. The first stage amplifier circuit is coupled to a first input node for receiving a first input signal and amplifying the first input signal to generate a first amplified signal. The second stage amplifier circuit is coupled to the first stage amplifier circuit for receiving the first amplified signal and amplifying the first amplified signal to generate a first output signal at a first output node. The first feedforward circuit is coupled between the first input node and the second stage amplifier circuit for feeding the first input signal forward to the second stage amplifier circuit.

    摘要翻译： 运算放大器电路包括第一级放大器电路，第二级放大器电路和第一前馈电路。 第一级放大器电路耦合到第一输入节点，用于接收第一输入信号并放大第一输入信号以产生第一放大信号。 第二级放大器电路耦合到第一级放大器电路，用于接收第一放大信号并放大第一放大信号以在第一输出节点产生第一输出信号。 第一前馈电路耦合在第一输入节点和第二级放大器电路之间，用于将第一输入信号向前馈送到第二级放大器电路。