Electromagnetic valve
    71.
    发明授权
    Electromagnetic valve 有权
    电磁阀

    公开(公告)号:US06527249B2

    公开(公告)日:2003-03-04

    申请号:US09864209

    申请日:2001-05-25

    IPC分类号: F16K3102

    CPC分类号: F16K31/0613 Y10T137/8671

    摘要: An electromagnetic valve comprises a case having a cylindrical portion, a yoke having a large diameter portion and a small diameter portion, and a sleeve having at least two ports and receiving a valve member therein so as to perform reciprocating motion. The large diameter portion of the yoke is fluid-tightly pressed into the inner circumferential surface of the cylindrical portion of the case, and the inner circumferential surface of the sleeve is fluid-tightly pressed onto the outer circumferential surface of the small diameter portion of the yoke.

    摘要翻译: 电磁阀包括具有圆柱形部分的壳体,具有大直径部分和小直径部分的轭,以及具有至少两个端口并且在其中容纳阀构件以便执行往复运动的套筒。 轭的大直径部分被流体地压入壳体的圆筒部的内周面,并且套筒的内周面被流体地压紧到位于壳体的小直径部的外周面上 轭。

    Brake disk
    72.
    发明授权
    Brake disk 失效
    制动盘

    公开(公告)号:US06491142B2

    公开(公告)日:2002-12-10

    申请号:US09820917

    申请日:2001-03-30

    IPC分类号: F16D6512

    摘要: A brake disk having a disk body formed of a titanium alloy, and inner and outer friction members formed of a stainless steel and bonded to opposite surfaces of the disk body by a brazing method is disclosed. The friction members can be simply bonded to the opposite surfaces of the disk body in a manner that provides a lightweight brake disk while simultaneously suppressing cost.

    摘要翻译: 公开了一种具有由钛合金形成的盘体的制动盘,以及由不锈钢形成并通过钎焊方法结合到盘体的相对表面的内摩擦构件和外摩擦构件。 摩擦构件可以简单地结合到盘体的相对表面,从而提供轻便的制动盘同时抑制成本。

    Method of manufacturing semiconductor memory device having a capacitor
    73.
    发明授权
    Method of manufacturing semiconductor memory device having a capacitor 失效
    具有电容器的半导体存储器件的制造方法

    公开(公告)号:US06333226B1

    公开(公告)日:2001-12-25

    申请号:US09425172

    申请日:1999-10-22

    IPC分类号: H01L218242

    CPC分类号: H01L27/10852 H01L27/10817

    摘要: Disclosed herein is a semiconductor memory device. In the semiconductor memory device, a transfer transistor having a drain region and a source region is formed on an Si semiconductor substrate. A lower end of a storage node is electrically connected to the drain region through a drain contact hole defined in an interlayer insulator. The storage node has an on-film extending portion which extends on an upper surface of the interlayer insulator, and a fin-shaped electrode portion which protrudes from the on-film extending portion. Structurally, the fin-shaped electrode portion is provided within a capacitor region so as to extend within a region smaller than the capacitor region and is spaced away from the on-film extending portion on the side of a bit line contact hole defined in the interlayer insulator.

    摘要翻译: 这里公开了一种半导体存储器件。 在半导体存储器件中,在Si半导体衬底上形成具有漏极区域和源极区域的转移晶体管。 存储节点的下端通过限定在层间绝缘体中的漏极接触孔电连接到漏极区域。 存储节点具有在层间绝缘体的上表面上延伸的膜上延伸部分和从膜上延伸部分突出的鳍状电极部分。 在结构上,鳍状电极部分设置在电容器区域内,以便在小于电容器区域的区域内延伸,并且与位于中间层中限定的位线接触孔侧的膜上延伸部分间隔开 绝缘子。

    Process for synthesizing metallocene compounds
    75.
    发明授权
    Process for synthesizing metallocene compounds 失效
    合成茂金属化合物的方法

    公开(公告)号:US5892075A

    公开(公告)日:1999-04-06

    申请号:US936169

    申请日:1997-09-23

    IPC分类号: C07F17/00 C07F7/00

    CPC分类号: C07F17/00 Y10S526/943

    摘要: The object of the invention resides in the development of an improved process for synthesizing metallocene compounds useful as olefin polymerization catalysts.A new process for synthesizing metallocene compounds of formulae (IV) and (IV') comprises a reaction of formula (I) with formula (II) or (II') to afford formula (III) or (III'), and then a reaction of a halogenating agent.In formulae (IV) and (IV') described below, M.sup.1 is a group IV transition-metal atom, L.sup.1 and L.sup.2 can be each other identical or different and are substituted or unsubstituted cyclopentadienyl, substituted or unsubstituted indenyl or substituted or unsubstituted fluorenyl groups, B is a hydrocarbon having 1-20 carbon atoms, silylene having 1-20 carbon atoms, oligosilylene or germylene groups, binding to L.sup.1 and L.sup.2, Y can be identical or different and is each independently of one another a halogen atom. Further, M.sup.1 can be coordinated with an ether or an amine at any coordination number. ##STR1##

    摘要翻译: 本发明的目的在于开发可用作烯烃聚合催化剂的金属茂化合物的改进方法。 用于合成式(IV)和(IV')的茂金属化合物的新方法包括式(I)与式(II)或(II')的反应,得到式(III)或(III'),然后 卤化剂的反应。 在下述式(IV)和(IV')中,M1是IV族过渡金属原子,L1和L2可以彼此相同或不同,并且是取代或未取代的环戊二烯基,取代或未取代的茚基或取代或未取代的芴基 B是具有1-20个碳原子的烃,具有1-20个碳原子的亚甲硅基,低级亚烯基或亚甲硅烷基,与L1和L2结合,Y可以相同或不同,并且各自独立地为卤素原子。 此外,M1可以任何配位数与醚或胺配位。 反应方案2

    Protecting film for wafer and method for grinding surface of wafer with
the same
    77.
    发明授权
    Protecting film for wafer and method for grinding surface of wafer with the same 失效
    晶圆保护膜及其研磨方法

    公开(公告)号:US5601732A

    公开(公告)日:1997-02-11

    申请号:US555786

    申请日:1995-11-09

    申请人: Masahiro Yoshida

    发明人: Masahiro Yoshida

    摘要: Upon grinding a back of a substrate, a protecting tape made of a material soluble to IPA (isopropanol), for example, a vinyl acetate thermoplastic adhesive is appended on the surface of a pattern-formed layer of a wafer, grinding the back, dipping the wafer in a cleaning vessel containing IPA, and dissolving and removing the protecting tape from the wafer, thereby giving no damages to the wafer, and reducing the number of operation steps.

    摘要翻译: 在研磨基材的背面后,将由可溶于IPA(异丙醇)的材料制成的保护带,例如乙酸乙烯酯热塑性粘合剂附着在晶片的图案形成层的表面上,研磨背面,浸渍 在包含IPA的清洁容器中的晶片,并且从晶片上溶解并除去保护带,从而不会损坏晶片,并且减少操作步骤的数量。

    Processing device for sheet-like media
    78.
    发明授权
    Processing device for sheet-like media 失效
    片状介质处理装置

    公开(公告)号:US5528788A

    公开(公告)日:1996-06-25

    申请号:US469857

    申请日:1995-06-06

    CPC分类号: B08B3/08 B08B3/10

    摘要: A processing device for processing sheet-like media via immersion in a special fluid, for example, for renewing a copy sheet by removing printed material such as toner therefrom. The processing device has a tank accommodating a fluid therein; a sheet feeding device for feeding a sheet into the fluid in the tank, a sheet accommodating device for accommodating a sheet, a sensing device for outputting a signal responsive to a state of the sheet in the sheet accommodating device, and a changing device for changing a relative position between the tank and the sheet accommodating device, the relative position including a retracted position where the sheet accommodating device is positioned outside the tank and an operating position where the sheet accommodating device is positioned within the fluid in the tank, the changing device changing the relative position in response to the signal outputted by the sensing device. The processing device permits a jammed sheet to be easily removed from the device, usually without it being necessary for an operator to touch the fluid in the tank.

    摘要翻译: 一种用于通过浸入特殊流体来处理片状介质的处理装置,例如通过从其中去除诸如调色剂的印刷材料来更新复印纸。 处理装置具有容纳流体的罐; 用于将片材供给到罐中的流体中的片材进给装置,用于容纳片材的片材容纳装置,用于响应于片材容纳装置中的片状态输出信号的感测装置,以及用于改变 所述罐与所述纸张容纳装置之间的相对位置,所述相对位置包括所述纸张容纳装置位于所述储存箱外部的缩回位置以及所述纸张容纳装置位于所述储存器的流体内的操作位置,所述变更装置 响应于由感测装置输出的信号改变相对位置。 处理装置允许卡住的片材容易地从装置移除,通常不需要操作者接触罐中的流体。

    Semiconductor memory device
    79.
    发明授权

    公开(公告)号:US5497353A

    公开(公告)日:1996-03-05

    申请号:US413411

    申请日:1995-03-30

    CPC分类号: G11C7/18 G11C7/1075 G11C8/10

    摘要: A multiport memory is provided which permits both random access and serial access. In order to reduce parasitic capacitance and improve operating speed, the serial input/output lines are each divided into two parts at their middle points. Sense amplifiers for the serial input/output lines are provided at upper and lower ends of the serial access memory elements to respectively amplify signals from the divided lines. Additional features are provided for improving both the serial and random operation. For example, during the serial read mode, the column selector for random access is simultaneously operated, and read data passing through the random access column selector is used as head data for the serial output operation to be delivered through the serial output circuit. Also, a serial selector can be controlled by a select signal formed by a Gray Code counter to improve operating speed. Further features included a redundancy system for relief of defective bits, the use of common bit lines to improve integration density and an improved refreshing arrangement to reduce power consumption during the refresh mode.