公开(公告)号：US08143093B2

公开(公告)日：2012-03-27

申请号：US12405897

申请日：2009-03-17

申请人： Yan Ye

发明人： Yan Ye

IPC分类号： H01L21/84 ,  H01L29/786

CPC分类号： H01L29/7869

摘要： The present invention generally relates to thin film transistors (TFTs) and methods of making TFTs. The active channel of the TFT may comprise one or more metals selected from the group consisting of zinc, gallium, tin, indium, and cadmium. The active channel may also comprise nitrogen and oxygen. To protect the active channel during source-drain electrode patterning, an etch stop layer may be deposited over the active layer. The etch stop layer prevents the active channel from being exposed to the plasma used to define the source and drain electrodes. The etch stop layer and the source and drain electrodes may be used as a mask when wet etching the active material layer that is used for the active channel.

摘要翻译： 本发明一般涉及薄膜晶体管（TFT）以及制造TFT的方法。 TFT的有源沟道可以包括一种或多种选自锌，镓，锡，铟和镉的金属。 活性通道还可以包含氮和氧。 为了在源极 - 漏极电极图案化期间保护有源沟道，可以在有源层上沉积蚀刻停止层。 蚀刻停止层防止有源沟道暴露于用于限定源极和漏极的等离子体。 当湿蚀刻用于有源沟道的活性材料层时，蚀刻停止层和源电极和漏电极可用作掩模。

公开(公告)号：US08121418B2

公开(公告)日：2012-02-21

申请号：US12840229

申请日：2010-07-20

申请人： Yan Ye ,  Yiliang Bao

发明人： Yan Ye ,  Yiliang Bao

IPC分类号： G06K9/36

CPC分类号： H04N19/34 ,  H04N19/13 ,  H04N19/14 ,  H04N19/46 ,  H04N19/61

摘要： A method for decoding significance coefficients in an encoded video sequence is described. An encoded video bitstream is received. Codebook table information is retrieved from the bitstream. Significance symbols are decoded using the retrieved codebook table information. Significance coefficients are decoded using the significance symbols. A plurality of transform coefficients is dequantized. An inverse transform is applied to a residual signal. A video sequence is constructed. A method for coding significance coefficients in a video sequence is also described.

摘要翻译： 描述了一种用于对编码视频序列中的有效系数进行解码的方法。 接收编码视频位流。 从比特流中检索码本表信息。 使用检索到的码本表信息对意义符号进行解码。 使用有效符号对重要性系数进行解码。 多个变换系数被去量化。 对残差信号进行逆变换。 构建视频序列。 还描述了用于对视频序列中的有效系数进行编码的方法。

公开(公告)号：US20120000773A1

公开(公告)日：2012-01-05

申请号：US13231182

申请日：2011-09-13

申请人： Yan Ye ,  Ankur Kadam ,  Yanping Li ,  Allen Ka-Ling Lau ,  Makoto Inagawa ,  Bradley O. Stimson ,  Akihiro Hosokawa

发明人： Yan Ye ,  Ankur Kadam ,  Yanping Li ,  Allen Ka-Ling Lau ,  Makoto Inagawa ,  Bradley O. Stimson ,  Akihiro Hosokawa

IPC分类号： C23C14/34

CPC分类号： C23C14/564 ,  C23C14/0063 ,  C23C14/35 ,  H01J37/3244 ,  H01J37/34 ,  H01J37/3438

摘要： The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.

摘要翻译： 本发明通常包括一个或多个冷却的阳极，其遮蔽一个或多个气体导入管，其中冷却的阳极和气体引入管都跨越在溅射室内的一个或多个溅射靶和一个或多个衬底之间限定的处理空间。 气体导入管可以具有引导从一个或多个基底引入的气体的气体出口。 气体引入管可以将诸如氧的反应性气体引入到用于通过反应溅射沉积TCO膜的溅射室中。 在多步骤溅射处理中，可以改变气体流动（即，气体的量和气体的类型），靶和基板之间的间隔以及DC功率以实现期望的结果。

公开(公告)号：US20110306169A1

公开(公告)日：2011-12-15

申请号：US13215013

申请日：2011-08-22

申请人： Yan Ye

发明人： Yan Ye

IPC分类号： H01L21/336

CPC分类号： H01L29/7869 ,  H01L21/02521 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

摘要： A capping layer may be deposited over the active channel of a thin film transistor (TFT) in order to protect the active channel from contamination. The capping layer may affect the performance of the TFT. If the capping layer contains too much hydrogen, nitrogen, or oxygen, the threshold voltage, sub threshold slope, and mobility of the TFT may be negatively impacted. By controlling the ratio of the flow rates of the nitrogen, oxygen, and hydrogen containing gases, the performance of the TFT may be optimized. Additionally, the power density, capping layer deposition pressure, and the temperature may also be controlled to optimize the TFT performance.

摘要翻译： 可以在薄膜晶体管（TFT）的有源沟道上沉积覆盖层，以保护有源沟道免受污染。 封盖层可能会影响TFT的性能。 如果封盖层含有太多的氢，氮或氧，则TFT的阈值电压，次阈值斜率和迁移率可能受到负面影响。 通过控制氮气，氧气和含氢气体的流量比，可以优化TFT的性能。 此外，还可以控制功率密度，覆盖层沉积压力和温度以优化TFT性能。

公开(公告)号：US07988470B2

公开(公告)日：2011-08-02

申请号：US12884572

申请日：2010-09-17

申请人： Yan Ye

发明人： Yan Ye

IPC分类号： H01L21/00 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78606

摘要： The present invention generally relates to thin film transistors (TFTs) and methods of making TFTs. The active channel of the TFT may comprise one or more metals selected from the group consisting of zinc, gallium, tin, indium, and cadmium. The active channel may also comprise nitrogen and oxygen. To protect the active channel during source-drain electrode patterning, an etch stop layer may be deposited over the active layer. The etch stop layer prevents the active channel from being exposed to the plasma used to define the source and drain electrodes. The etch stop layer and the source and drain electrodes may be used as a mask when wet etching the active material layer that is used for the active channel.

摘要翻译： 本发明一般涉及薄膜晶体管（TFT）以及制造TFT的方法。 TFT的有源沟道可以包括一种或多种选自锌，镓，锡，铟和镉的金属。 活性通道还可以包含氮和氧。 为了在源极 - 漏极电极图案化期间保护有源沟道，可以在有源层上沉积蚀刻停止层。 蚀刻停止层防止有源沟道暴露于用于限定源极和漏极的等离子体。 当湿蚀刻用于有源沟道的活性材料层时，蚀刻停止层和源电极和漏电极可用作掩模。

公开(公告)号：US20110175084A1

公开(公告)日：2011-07-21

申请号：US13074783

申请日：2011-03-29

申请人： Yan Ye

发明人： Yan Ye

IPC分类号： H01L29/02 ,  C23C14/06

CPC分类号： H01L27/016 ,  C23C14/0036 ,  C23C14/0676 ,  H01L21/02521 ,  H01L21/02554 ,  H01L21/0257 ,  H01L21/02631 ,  H01L29/22 ,  H01L29/7869

摘要： The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995 atomic percent or greater), which may be doped with aluminum (about 1 atomic percent to about 20 atomic percent) or other doping metals. The zinc target may be reactively sputtered by introducing nitrogen and oxygen to the chamber. The amount of nitrogen may be significantly greater than the amount of oxygen and argon gas. The amount of oxygen may be based upon a turning point of the film structure, the film transmittance, a DC voltage change, or the film conductivity based upon measurements obtained from deposition without the nitrogen containing gas. The reactive sputtering may occur at temperatures from about room temperature up to several hundred degrees Celsius. After deposition, the semiconductor film may be annealed to further improve the film mobility.

摘要翻译： 本发明通常包括半导体膜和用于沉积半导体膜的反应性溅射工艺。 溅射靶可以包括纯锌（即99.995原子％或更大），其可以掺杂有铝（约1原子％至约20原子％）或其它掺杂金属。 锌靶可以通过将氮和氧引入室来进行反应溅射。 氮的量可以显着大于氧气和氩气的量。 氧气的量可以基于膜结构的转折点，膜透射率，直流电压变化或基于通过不含氮气气体的沉积获得的测量值的膜电导率。 反应性溅射可以在约室温至几百摄氏度的温度下进行。 在沉积之后，半导体膜可以退火以进一步提高膜迁移率。

公开(公告)号：US07927713B2

公开(公告)日：2011-04-19

申请号：US11829037

申请日：2007-07-26

申请人： Yan Ye

发明人： Yan Ye

IPC分类号： H01L29/12

CPC分类号： H01L27/016 ,  C23C14/0036 ,  C23C14/0676 ,  H01L21/02521 ,  H01L21/02554 ,  H01L21/0257 ,  H01L21/02631 ,  H01L29/22 ,  H01L29/7869

摘要： The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995 atomic percent or greater), which may be doped with aluminum (about 1 atomic percent to about 20 atomic percent) or other doping metals. The zinc target may be reactively sputtered by introducing nitrogen and oxygen to the chamber. The amount of nitrogen may be significantly greater than the amount of oxygen and argon gas. The amount of oxygen may be based upon a turning point of the film structure, the film transmittance, a DC voltage change, or the film conductivity based upon measurements obtained from deposition without the nitrogen containing gas. The reactive sputtering may occur at temperatures from about room temperature up to several hundred degrees Celsius. After deposition, the semiconductor film may be annealed to further improve the film mobility.

摘要翻译： 本发明通常包括半导体膜和用于沉积半导体膜的反应性溅射工艺。 溅射靶可以包括纯锌（即99.995原子％或更大），其可以掺杂有铝（约1原子％至约20原子％）或其它掺杂金属。 锌靶可以通过将氮和氧引入室来进行反应溅射。 氮的量可以显着大于氧气和氩气的量。 氧气的量可以基于薄膜结构的转折点，膜透射率，直流电压变化或基于通过不含氮气气体的沉积获得的测量值的膜电导率。 反应性溅射可以在约室温至几百摄氏度的温度下进行。 在沉积之后，半导体膜可以退火以进一步提高膜迁移率。

公开(公告)号：US07768765B2

公开(公告)日：2010-08-03

申请号：US11683994

申请日：2007-03-08

申请人： Andrew Nguyen ,  Wing Lau Cheng ,  Hiroji Hanawa ,  Semyon L. Kats ,  Kartik Ramaswamy ,  Yan Ye ,  Kwok Manus Wong ,  Daniel J. Hoffman ,  Tetsuya Ishikawa ,  Brian C. Lue

发明人： Andrew Nguyen ,  Wing Lau Cheng ,  Hiroji Hanawa ,  Semyon L. Kats ,  Kartik Ramaswamy ,  Yan Ye ,  Kwok Manus Wong ,  Daniel J. Hoffman ,  Tetsuya Ishikawa ,  Brian C. Lue

IPC分类号： H01T23/00

CPC分类号： H01L21/67109

摘要： A support for a substrate processing chamber comprises a fluid circulating reservoir comprising a channel having serpentine convolutions. A fluid inlet supplies a heat transfer fluid to the fluid circulating reservoir and a fluid outlet discharges the heat transfer fluid. In one version, the channel is doubled over to turn back upon itself.

摘要翻译： 用于衬底处理室的支撑件包括流体循环容器，其包括具有蛇形卷积的通道。 流体入口将传热流体供应到流体循环储存器，并且流体出口排出传热流体。 在一个版本中，频道翻倍翻转自己。

公开(公告)号：US20100177822A1

公开(公告)日：2010-07-15

申请号：US12687487

申请日：2010-01-14

申请人： MARTA KARCZEWICZ ,  Giovanni Motta ,  Peisong Chen ,  Yan Ye

发明人： MARTA KARCZEWICZ ,  Giovanni Motta ,  Peisong Chen ,  Yan Ye

IPC分类号： H04N7/32

CPC分类号： H04N19/86 ,  H04N19/117 ,  H04N19/14 ,  H04N19/196 ,  H04N19/46 ,  H04N19/463 ,  H04N19/61 ,  H04N19/80 ,  H04N19/82

摘要： This disclosure describes techniques associated with filtering of video data in a video encoding and/or decoding process. In accordance with this disclosure, filtering is applied at an encoder, and filter information is encoded in the bitstream to identify the filtering that was applied at the encoder. Different types of filtering may be applied based on an activity metric determined for the video data. Moreover, in accordance with this disclosure, the manner in which the filter information is encoded into the bitstream may be dependent on the activity metric. In particular, for a first range of the activity metric, one or more filters are encoded directly, and for a second range of the activity metric, one or more filters are predictively encoded.

摘要翻译： 本公开描述与视频编码和/或解码过程中的视频数据的过滤相关联的技术。 根据本公开，在编码器处应用滤波，并且将滤波器信息编码在比特流中以识别在编码器处应用的滤波。 可以基于为视频数据确定的活动度量来应用不同类型的过滤。 此外，根据本公开，过滤器信息被编码到比特流中的方式可以取决于活动度量。 特别地，对于活动度量的第一范围，一个或多个过滤器被直接编码，并且对于活动度量的第二范围，一个或多个过滤器被预测编码。

公开(公告)号：US20100118970A1

公开(公告)日：2010-05-13

申请号：US12694522

申请日：2010-01-27

申请人： Yan Ye ,  Gokce Dane ,  Yen-Chi Lee ,  Ming-Chang Tsai ,  Nien-Chung Feng ,  Karl Ni

发明人： Yan Ye ,  Gokce Dane ,  Yen-Chi Lee ,  Ming-Chang Tsai ,  Nien-Chung Feng ,  Karl Ni

IPC分类号： H04N7/26

CPC分类号： H04N7/50 ,  H04N19/513 ,  H04N19/61 ,  H04N19/895

摘要： Methods and systems for processing video data are described. A set of candidate motion vectors is selected from motion vectors associated with macroblocks in a first frame of video data and from motion vectors associated with macroblocks in a second frame of the video data. A statistical measure of the set is determined. The statistical measure defines a motion vector for a macroblock of interest in the second frame.

摘要翻译： 描述用于处理视频数据的方法和系统。 从与视频数据的第一帧中的宏块相关联的运动向量和与视频数据的第二帧中的宏块相关联的运动矢量中选择一组候选运动矢量。 确定集合的统计量度。 统计度量定义第二帧中感兴趣的宏块的运动矢量。