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    SOLUTION DEPOSITION OF METAL SALTS TO FORM METAL OXIDES
    71.
    发明公开
    SOLUTION DEPOSITION OF METAL SALTS TO FORM METAL OXIDES 审中-公开

    公开(公告)号：US20230416105A1

    公开(公告)日：2023-12-28

    申请号：US18464678

    申请日：2023-09-11

    申请人： Oregon State University

    发明人： Cory K. Perkins ,  Douglas A. Keszler

    IPC分类号： C01G19/02 ,  C01G30/00 ,  C23C18/12

    CPC分类号： C01G19/02 ,  C01G30/007 ,  C23C18/1216

    摘要： Certain disclosed embodiments concern an organic solution suitable for forming metal oxide films, particularly thins films, comprising a metal salt selected from a Sn salt, an Sb salt, a dopant, and combinations thereof. The salt often is a halide salt, such as SnCl2 or SbCl3. Certain disclosed compositions are preferably formed using substantially pure reagents and may include a dopant, such as a fluoride dopant. Described solutions may be used to form thin films, such as a thin film comprising SnO2, Sb:SnO2, F:SnO2, or (Sb,F):SnO2. Such thin films may have any desired thickness, such as a thickness of from 200 or 700 nm, and are extremely smooth, such as having an RMS surface roughness >3 nm, such as 3 nm to 10 nm, with certain embodiments having an RMS surface roughness

    Sols, Multifunctional Applications of Sols, and Associated Products
    75.
    发明申请
    Sols, Multifunctional Applications of Sols, and Associated Products 有权

    公开(公告)号：US20220250920A1

    公开(公告)日：2022-08-11

    申请号：US17629293

    申请日：2020-07-24

    申请人： Sol-Gel Materials & Applications LTD

    发明人： Fanya Ismail

    IPC分类号： C01B33/14 ,  C01G19/02 ,  C01G23/053 ,  C01G25/02 ,  C08J3/21 ,  C09D1/00 ,  C09D5/02 ,  D21H17/28 ,  D21H19/54

    摘要： The use of a sol comprising a solvent, an alkoxide and a catalyst to prepare a water impermeable product is provided. Also provided is a water impermeable fibre-based product prepared using a sol. Further provided is a sol comprising a solvent, an alkoxide, a biopolymer, and a catalyst. A method of making a sol comprising a solvent, an alkoxide, a biopolymer, and a catalyst is also provided. The method comprises: a) dispersing a biopolymer in a solution comprising a catalyst and then adding an alkoxide; b) dispersing an alkoxide in a solvent, adding a catalyst and then adding a biopolymer; or c) dispersing an alkoxide in a solution comprising a catalyst and then adding a biopolymer. Yet further provided is a coated product wherein the product has been coated with a sol comprising a solvent, an alkoxide, a biopolymer, and a catalyst. A powder derived from a sol as described herein is also disclosed.

    MICRON SCALE TIN OXIDE-BASED SEMICONDUCTOR DEVICES
    76.
    发明申请
    MICRON SCALE TIN OXIDE-BASED SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20220209015A1

    公开(公告)日：2022-06-30

    申请号：US17568372

    申请日：2022-01-04

    申请人： Cornell University

    发明人： Jisung Park

    IPC分类号： H01L29/786 ,  H01L29/45 ,  H01L29/24 ,  H01L29/51 ,  H01L29/49 ,  C01G19/02 ,  C04B35/468 ,  H01L21/3065 ,  H01L21/311 ,  H01L51/00

    摘要： Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.

    METAL OXIDE NANOPARTICLES AS FILLABLE HARDMASK MATERIALS
    77.
    发明申请
    METAL OXIDE NANOPARTICLES AS FILLABLE HARDMASK MATERIALS 有权

    公开(公告)号：US20220093399A1

    公开(公告)日：2022-03-24

    申请号：US17544684

    申请日：2021-12-07

    申请人： Intel Corporation

    发明人： Marie KRYSAK ,  Florian GSTREIN ,  Manish CHANDHOK

    IPC分类号： H01L21/033 ,  C01G27/02 ,  H01L21/311 ,  C01G19/02 ,  C01G23/04 ,  C01F7/02 ,  C01G25/02 ,  H01L21/02 ,  C01F7/00 ,  H01L21/768

    摘要： A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material.