公开(公告)号：US20020029734A1

公开(公告)日：2002-03-14

申请号：US09864936

申请日：2001-05-25

发明人： Masahiko Mizuta ,  Tokuji Maeda ,  Masato Tabuchi

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B29/06 ,  C30B15/26

摘要： In pulling a single crystal by CZ method, stable pulling up is carried out in a pulling rate as fast as possible while a crystal deformation is controlled to an aimed value and density of grown-in defects is suppressed to a value below an upper limit value. As an index of deformation of the single crystal from a perfect circle, the aimed value of the crystal deformation is previously determined. The upper limit value of a pulling rate necessary to suppress a defect density to an allowable range is previously calculated from distribution of grown-in defects in the crystal section, the single crystal is pulled up according to a predetermined pulling rate, and then deviation of the achieved value from the aimed value of the crystal deformation in pulling is calculated. The deviation is converted to a correction of the pulling rate. This correction is added to a set value of the pulling rate in the pulling and the result is used as a temporary set value of the pulling rate in the next pulling. The temporary set value is compared with the upper limit value of the above described pulling rate and the smaller value is determined as the pulling rate in the next runs.

摘要翻译： 在通过CZ法拉取单晶时，以尽可能快的拉伸速度进行稳定的拉伸，同时将晶体变形控制为目标值，并且将生长的缺陷的密度抑制在低于上限值的值 。 作为单晶从正圆变形的指标，预先确定晶体变形的目标值。 将缺陷密度抑制到容许范围所需的拉拔速度的上限值是从晶体截面中的生长缺陷的分布预先计算出来的，单晶根据规定的拉伸速度被拉起，然后偏离 计算从牵引中的晶体变形的目标值得到的值。 该偏差被转换为拉动速率的校正。 将该校正加到牵引中的拉动速度的设定值，将结果作为下次牵引中的牵引速度的临时设定值。 将临时设定值与上述牵引速度的上限值进行比较，并将较小的值确定为下次运行中的牵引速率。

公开(公告)号：US20020000187A1

公开(公告)日：2002-01-03

申请号：US09229086

申请日：1999-01-08

发明人： EIICHI IINO

IPC分类号： C30B015/00

CPC分类号： C30B29/06 ,  C30B15/36

摘要： There is disclosed a method of producing a silicon monocrystal which comprises preparing a silicon seed crystal having a sharp tip end, and melting down a part of the silicon seed crystal from a tip end to a position having a predetermined thickness, followed by performing a necking operation to form a tapered necking part and a neck portion, and subsequently pulling a monocrystal ingot after increasing a diameter, wherein said part to be melted down is a part from a tip end to a position in which a thickness is twice as large as the diameter of the neck portion to be formed or more; said necking operation is performed in such a way that a tapered necking part is formed at an early stage by pulling a crystal with gradually decreasing the diameter to a minimum diameter of 5 mm or more, and then a neck portion is formed, subsequently the monocrystal ingot is pulled with increasing a diameter. There can be provided a method of producing a silicon monocrystal ingot which enables growing of monocrystal ingot without lowering rate of success in making a crystal dislocation free in the case that a thick neck is formed, and thereby improves productivity of a heavy silicon monocrystal having a large diameter.

摘要翻译： 公开了一种制造硅单晶的方法，其包括制备具有尖锐尖端的硅晶种，并将硅晶种的一部分从尖端熔化到具有预定厚度的位置，然后进行缩颈 操作以形成锥形颈缩部分和颈部部分，并且随后在增加直径之后拉动单晶锭，其中待熔化的部分是从尖端到厚度为两倍的部分的部分 要形成的颈部的直径或更多; 所述颈缩操作是这样一种方式进行的：通过将直径逐渐减小到最小直径为5mm以上的晶体，在早期形成锥形颈缩部，然后形成颈部，随后单晶 锭子随着直径的增加而拉动。 可以提供一种制造单晶硅锭的方法，其可以在形成厚的颈部的情况下生长单晶锭而不降低成形的结晶位错的成功率，从而提高重晶硅单晶的生产率，具有 直径大

公开(公告)号：US20010054376A1

公开(公告)日：2001-12-27

申请号：US09883955

申请日：2001-06-20

申请人： TOSHIBA CERAMICS CO., LTD.

发明人： Hiroyuki Miura ,  Yasuyuki Iwata ,  Shinsuke Kondoh

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B15/20

摘要： A single crystal pulling apparatus comprising, a laser unit 46 emitting a beam with a wavelength of 550 nm or less to form a spot on the surface of said melt, a spot camera 47 capturing the spot to produce electrical image signals corresponding thereto, an image processor 50 processing the electrical image signals to produce image data, and a control unit 49 receiving the image data and calculating a current melt level so that a crucible shaft lift 8 moves a crucible shaft up and down to adjust the melt level in accordance with the predetermined melt level.

摘要翻译： 一种单晶拉制装置，包括：发射波长为550nm以下的光束的激光单元46，以在所述熔体的表面上形成点;拍摄所述光斑以产生与其对应的电图像信号的光点照相机47;图像 处理器50处理电图像信号以产生图像数据，以及控制单元49，其接收图像数据并计算当前的熔融水平，使得坩埚轴升降机8上下移动坩埚轴，以根据 预定熔融度。

公开(公告)号：US20010047748A1

公开(公告)日：2001-12-06

申请号：US09851229

申请日：2001-05-08

申请人： WACKER-CHEMIE GmbH

发明人： Axel Frauenknecht ,  Matthaus Schantz ,  Viktor Beer

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B15/02 ,  C30B13/08 ,  C30B13/285 ,  Y10S117/911 ,  Y10T117/1032 ,  Y10T117/1072

摘要： A charging material made from semiconductor material, is used for charging or recharging a melting crucible during the Czochralski crucible-pulling process. This charging material has a polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue, which rods are coupled by means of a tongue-and-groove connection. There is also a holding system for holding a polycrystalline silicon rod during the Czochralski crucible-pulling process or the float zone process, which has a tongue-and-groove connection between the polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue.

摘要翻译： 由半导体材料制成的充电材料用于在切克劳斯基坩埚拉拔过程中对熔化坩埚进行充电或再充电。 该充电材料具有一端具有凹槽的多晶硅半导体棒和一端具有舌状物的单晶半导体棒，这些棒通过榫槽连接而联接。 还有一种在切克劳斯基坩埚拉拔过程或浮区过程中保持多晶硅棒的保持系统，其在一端具有凹槽的多晶半导体棒之间具有榫槽连接， 单晶半导体棒，其一端具有舌头。

公开(公告)号：US20010039916A1

公开(公告)日：2001-11-15

申请号：US09874487

申请日：2001-06-05

发明人： Luciano Mule' Stagno ,  Lu Fei ,  Joseph C. Holzer ,  Harold W. Korb ,  Falster J. Falster

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  Y10T117/1004

摘要： The present invention is directed to a set of epitaxial silicon wafers assembled in a wafer cassette, boat or other wafer carrier. Each wafer comprises a single crystal silicon substrate having an axially symmetric region in which silicon self-interstitials are the predominant intrinsic point defect and which is substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a surface of the substrate and which is substantially free of grown-in defects caused by the presence of agglomerated silicon self-interstitial defects on the substrate surface upon which the epitaxial layer is deposited.

公开(公告)号：US20010020696A1

公开(公告)日：2001-09-13

申请号：US09748777

申请日：2000-12-27

发明人： Alok Mani Srivastava ,  Holly Ann Comanzo ,  Douglas Allen Doughty ,  William Winder Beers

IPC分类号： C30B015/00 ,  C30B011/14

CPC分类号： H01J61/44 ,  C09K11/7703 ,  C09K11/7706 ,  C09K11/7712 ,  C09K11/7721 ,  C09K11/7749 ,  C09K11/7774 ,  G21K2004/06 ,  H01J29/20

摘要： A SrAl12O19 green luminescent material is doped with Mn2null activator ions and at least one trivalent rare earth sensitizer ion species. Preferably, the material contains four rare earth ions: Ce3null, Pr3null, Gd3null and Tb3null. Optionally, a portion of the aluminum may be substituted with magnesium. The material may be used as a display device or lamp phosphor or as an X-ray diagnostic or laser scintillator.

摘要翻译： SrAl12O19绿色发光材料掺杂有Mn2 +活化剂离子和至少一种三价稀土敏化剂离子物质。 优选地，该材料含有四种稀土离子：Ce 3+，Pr 3+，Gd 3+和Tb 3+。 任选地，一部分铝可以被镁取代。 该材料可以用作显示装置或灯荧光体或X射线诊断或激光闪烁体。

公开(公告)号：US20010020436A1

公开(公告)日：2001-09-13

申请号：US09798750

申请日：2001-03-02

申请人： NGK Insulators, Ltd.

发明人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

IPC分类号： C30B015/00

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30

摘要： A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A fibrous seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A shoulder portion 14A is produced following the seed crystal, and a planar body 14B is produced following the shoulder portion. In this case, differences in lattice constants between each crystal axis of the seed crystal and each corresponding crystal axis of the shoulder portion are controlled at 1% or less, respectively.

摘要翻译： 当通过微型拉下法生长氧化物单晶的平面体时，连续稳定地生长具有良好结晶度的平面体。 氧化物单晶的原料在坩埚7中熔融。将纤维状晶种15与熔体18接触，然后通过降低晶种将熔体18从坩埚7的开口13c拉下。 在晶种之后产生肩部14A，并且在肩部之后制造平面体14B。 在这种情况下，将晶种的每个晶轴与肩部的每个相应的晶轴之间的晶格常数的差分别控制在1％以下。

公开(公告)号：US20010007240A1

公开(公告)日：2001-07-12

申请号：US09759030

申请日：2001-01-11

申请人： SEH America, Inc.

发明人： Gerald R. Dietze ,  Sean G. Hanna ,  Zbigniew J. Radzimski

IPC分类号： C30B015/00

CPC分类号： C23C16/455 ,  C23C16/4584 ,  C23C16/481 ,  C30B25/12 ,  C30B31/14 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A low-cost method of manufacturing a silicon wafer is provided. The method comprises providing a crucible for melting silicon; adding silicon to the crucible; melting the silicon to form a melt; applying an electrical potential across the crucible; pulling a silicon crystal from the melt according to the Czochralski technique at a pulling rate of greater than 1.1 mm/min; and forming a silicon wafer from the silicon crystal. The method may also include adding a nitrogen-containing dopant to the crucible. Furthermore, the method may include etching the wafer first in an alkaline etching solution, and then in an acidic etching solution. The method may also include simultaneously depositing an epitaxial first film on the frontside of the wafer and a second film on the backside of the wafer, wherein the second film traps impurities on the backside of the wafer so the impurities do not contaminate the frontside of the wafer while the epitaxial first film is being grown.

摘要翻译： 提供了一种制造硅晶片的低成本方法。 该方法包括提供用于熔化硅的坩埚; 向坩埚中加入硅; 熔化硅以形成熔体; 在坩埚上施加电位; 以Czochralski技术，以大于1.1mm / min的拉伸速率从熔体中拉出硅晶体; 以及从硅晶体形成硅晶片。 该方法还可以包括向坩埚中加入含氮掺杂剂。 此外，该方法可以包括首先在碱性蚀刻溶液中蚀刻晶片，然后在酸性蚀刻溶液中蚀刻晶片。 该方法还可以包括在晶片的前侧同时沉积外延第一膜和在晶片的背面上的第二膜，其中第二膜捕获晶片背面的杂质，使得杂质不会污染晶片的前侧 晶圆，同时外延第一薄膜正在生长。

公开(公告)号：US20010004874A1

公开(公告)日：2001-06-28

申请号：US09746811

申请日：2000-12-26

发明人： Kazuto Igarashi ,  Yoshihiro Tsukuda ,  Hidemi Mitsuyasu ,  Hokuto Yamatsugu ,  Tohru Nunoi ,  Hiroshi Taniguchi ,  Koji Yoshida

IPC分类号： C30B015/00

CPC分类号： C30B29/06 ,  C30B15/007 ,  Y10T117/10

摘要： A high-quality crystal sheet is provided. An apparatus for use in producing a crystal sheet includes a substrate having a main surface on which a crystal sheet is formed, a crucible holding a melt therein, a movable member holding the substrate to move it to bring its main surface into contact with the melt and then move the substrate away from the melt, and cooling means for cooling the movable member.

摘要翻译： 提供高质量的晶片。 用于制造晶片的装置包括：具有形成有晶体片的主表面的基板，保持熔融物的坩埚;保持基板移动以使其主表面与熔体接触的可动部件 然后将基板移离熔体，以及用于冷却可动件的冷却装置。

公开(公告)号：US20010003268A1

公开(公告)日：2001-06-14

申请号：US09344036

申请日：1999-06-25

发明人： ROBERT J. FALSTER ,  VLADIMIR VORONKOV

IPC分类号： C30B015/00

CPC分类号： C30B15/206 ,  C30B15/203 ,  C30B29/06 ,  C30B33/00

摘要： A process for growing a single crystal silicon ingot having an axially symmetric region substantially free of agglomerated intrinsic point defects. The ingot is grown generally in accordance with the Czochralski method; however, the manner by which the ingot is cooled from the temperature of solidification to a temperature which is in excess of about 900null C. is controlled to allow for the diffusion of intrinsic point defects, such that agglomerated defects do not form in this axially symmetric region. Accordingly, the ratio v/G0 is allowed to vary axially within this region, due to changes in v or G0, between a minimum and maximum value by at least 5%.

摘要翻译： 用于生长具有基本上没有附聚的固有点缺陷的轴对称区域的单晶硅锭的方法。 锭通常按照Czochralski法生长; 然而，将锭从凝固温度冷却至超过约900℃的温度的方式被控制以允许本征点缺陷的扩散，使得在该轴向上不形成聚集的缺陷 对称区域。 因此，由于v或G0的变化，最小值与最大值之间的比例v / G0在该区域内轴向变化至少5％。