公开(公告)号：US20130146583A1

公开(公告)日：2013-06-13

申请号：US13315829

申请日：2011-12-09

申请人： Eugen Wilde

发明人： Eugen Wilde

IPC分类号： H05B3/68 ,  H05K13/00 ,  H05B1/00

CPC分类号： H05B3/68 ,  H05B3/686 ,  H05B3/74 ,  Y10T29/49002

摘要： An electrical heating device for a cooking field with a cooking field plate is arranged beneath the cooking field plate and comprises a support, wherein along a rim of said support a rim part in ring form is placed. The heating device comprises a longitudinal heating element for generating heating power for said cooking field to keep food warm that is placed in a saucepan upon it above the heating device. The heating element is arranged in a circumferential groove in said support. In a direction radially inwardly to a central region over the support a gap is provided between the rim part and the support for heating power from said heating element to exit into the central region as a heating of the cooking field plate above the heating device.

摘要翻译： 用于具有烹饪场板的烹饪场的电加热装置布置在烹饪场板的下方，并且包括支撑件，其中沿着所述支撑件的边缘放置环形的边缘部分。 加热装置包括纵向加热元件，用于产生用于所述烹饪场的加热功率，以将放置在平底锅中的食物保持在加热装置上方。 加热元件布置在所述支撑件中的周向凹槽中。 在径向向内延伸到支撑件上方的中心区域的方向上，在边缘部分和支撑件之间设置有间隙，用于加热来自所述加热元件的功率，作为加热装置上方的烹饪场板的加热而退出到中心区域。

公开(公告)号：US20130136920A1

公开(公告)日：2013-05-30

申请号：US13576705

申请日：2011-02-10

申请人： Stephane Tuffe ,  Jean-Francois Pierson

发明人： Stephane Tuffe ,  Jean-Francois Pierson

IPC分类号： C09D5/00 ,  H05B1/00

CPC分类号： C09D5/00 ,  A47J36/02 ,  C23C8/02 ,  C23C12/00 ,  C23C12/02 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/0664 ,  H05B1/00 ,  Y10T428/265

摘要： Provided is a food-cooking surface for a culinary article or domestic electrical cooking appliance, consisting in depositing Zr and/or Nb and/or Ti on a substrate, the production process including a step of carburizing and/or nitriding at least one of the aforementioned elements, characterized in that the cooking surface also includes depositing Si so as to produce (Zr/Nb/Ti)—Si—(N/C) coatings. Also provided is a culinary article or domestic electrical or gas cooking appliance comprising such a cooking surface.

摘要翻译： 本发明提供一种用于烹饪用品或家用电烹饪器具的食物烹饪表面，其包括在基底上沉积Zr和/或Nb和/或Ti，该生产方法包括渗碳和/或氮化至少一种 上述元件，其特征在于烹饪表面还包括沉积Si以产生（Zr / Nb / Ti）-Si-（N / C）涂层。 还提供了包括这种烹饪表面的烹饪用品或家用电气或燃气烹饪器具。

公开(公告)号：US20130126509A1

公开(公告)日：2013-05-23

申请号：US13351741

申请日：2012-01-17

申请人： QIYANG HE ,  Yiying Zhang

发明人： QIYANG HE ,  Yiying Zhang

IPC分类号： H05B1/00

CPC分类号： H01L21/67115 ,  H01L21/67248 ,  H01L21/6831

摘要： This invention discloses a reaction apparatus for wafer treatment, an electrostatic chuck and a wafer temperature control method, in the field of semiconductor processing. The electrostatic chuck comprises an insulating layer for supporting a wafer and a lamp array disposed in the insulating layer. Each lamp of the lamp array can be independently controlled to turn on and off and/or to adjust the output power. By controlling the on/off switch and/or output power of each lamp of the lamp array the temperature of the wafer held on the ESC is adjusted and temperature non-uniformity can be more favourably adjusted, greatly improving wafer temperature uniformity, particularly alleviating non-radial temperature non-uniformity.

摘要翻译： 本发明公开了一种在半导体处理领域中的晶片处理用反应装置，静电卡盘和晶片温度控制方法。 静电卡盘包括用于支撑晶片的绝缘层和设置在绝缘层中的灯阵列。 灯阵列的每个灯可以被独立地控制以打开和关闭和/或调节输出功率。 通过控制灯阵列的每个灯的开/关开关和/或输出功率，调节保持在ESC上的晶片的温度，并且可以更好地调节温度不均匀性，极大地提高晶片温度均匀性，特别是减轻非 - 镭温度不均匀。

公开(公告)号：US08445819B2

公开(公告)日：2013-05-21

申请号：US12819863

申请日：2010-06-21

申请人： Patrick Ferguson

发明人： Patrick Ferguson

IPC分类号： H05B1/00

CPC分类号： A61F7/007 ,  A61F2007/0001 ,  A61F2007/0073 ,  A61F2007/0078 ,  A61F2007/0226 ,  A61F2007/0261 ,  H05B3/342 ,  H05B2203/003 ,  H05B2203/013 ,  H05B2203/017

摘要： A breathable electrical heater element for a topical application device such as a wound dressing or a therapeutic heating pad is disclosed. The heater element is formed by photochemically etching a track pattern onto a porous metallised fabric (e.g. nickel coated woven polyester). The heater element has a skin or wound contact layer laminated to the front face of the heater element. An adhesive layer is laminated to the back face of the heater element. The adhesive layer forms an overhang to provide an adhesive border around the wound contact layer to adhere the device to the skin of a patient. Therapeutically active drugs (optionally microencapsulated) may be incorporated into the skin or wound contact layer. Operation of the heater element causes the skin or wound contact layer to release the active drugs to the skin or wound of the patient.

摘要翻译： 公开了一种用于局部施用装置例如伤口敷料或治疗加热垫的透气电加热器元件。 加热器元件通过光学化学地将轨迹图案蚀刻到多孔金属化织物（例如镀镍织造聚酯）上而形成。 加热器元件具有层压到加热器元件的前表面上的皮肤或缠绕的接触层。 将粘合剂层层压到加热元件的背面。 粘合剂层形成悬垂部以在伤口接触层周围提供粘合剂边界，以将装置粘附到患者的皮肤上。 可将治疗活性药物（任选地微胶囊化）并入皮肤或伤口接触层中。 加热器元件的操作使得皮肤或伤口接触层将活性药物释放到患者的皮肤或伤口。

公开(公告)号：US20130098888A1

公开(公告)日：2013-04-25

申请号：US13807243

申请日：2011-07-15

申请人： Koji Ebara ,  Tetsuya Oka ,  Shuji Takahashi

发明人： Koji Ebara ,  Tetsuya Oka ,  Shuji Takahashi

IPC分类号： H05B1/00

CPC分类号： H05B1/00 ,  C30B29/06 ,  C30B33/02 ,  H01L21/324 ,  H01L21/67115

摘要： The present invention is a method for heat-treating a wafer, the method by which heat treatment at a predetermined temperature with rapid rise and fall of temperature is performed by performing heating by a heating source in a state in which a principal surface (a first principal surface) of a wafer is supported by a supporting member, the method in which heat treatment is performed with control of the heating source being performed in such a way that the temperature of the first principal surface supported by the supporting member becomes 1 to 25° C. higher than the temperature of a principal surface (a second principal surface) opposite to the first principal surface of the wafer. As a result, a method for heat-treating a wafer, the method that can reliably suppress a slip dislocation generated from a wafer supporting position when heat treatment is performed on a silicon wafer, is provided.

摘要翻译： 本发明是一种对晶片进行热处理的方法，其特征在于，通过在主表面（第一 晶片的主表面）由支撑构件支撑，其中通过控制加热源进行热处理的方法是这样一种方式，使得由支撑构件支撑的第一主表面的温度变为1至25 高于与晶片的第一主表面相对的主表面（第二主表面）的温度。 结果，提供了一种用于对晶片进行热处理的方法，当对硅晶片进行热处理时，可以可靠地抑制从晶片支撑位置产生的滑移位错的方​​法。

公开(公告)号：US08426775B2

公开(公告)日：2013-04-23

申请号：US12795488

申请日：2010-06-07

申请人： Lisa Frank

发明人： Lisa Frank

IPC分类号： H05B1/00 ,  H05B3/00

CPC分类号： A63H33/3055

摘要： The present disclosure provides a toy electric oven including an insulated housing containing a heating chamber, a door that latches to prevent access to the heating chamber while hot, a cooling system with a fan, a timer, and a window for viewing the heating chamber when the door is closed, the window remaining at a safe temperature for touching while the toy electric oven is operating. The window may be a double-paned structure wherein the vapor space between the windows is vented using the cooling fan.

摘要翻译： 本发明提供了一种玩具电烤炉，其包括：绝热壳体，其包含加热室，门锁定以防止在热时进入加热室;具有风扇的冷却系统，定时器和用于观察加热室的窗口， 门关闭，窗户保持在安全温度下，玩具电烤箱正在操作时触摸。 窗口可以是双层结构，其中使用冷却风扇将窗口之间的蒸汽空间排出。

公开(公告)号：US08399814B2

公开(公告)日：2013-03-19

申请号：US11927010

申请日：2007-10-29

申请人： Stella Stepanian

发明人： Stella Stepanian

IPC分类号： H05B3/44 ,  H05B1/00

CPC分类号： H05B3/342 ,  H05B2203/003 ,  H05B2203/005 ,  H05B2203/014 ,  H05B2203/017

摘要： A uniform heating assembly including at least one first insulative substrate, at least one first common terminal, at least one second common terminal and a multiplicity of conductive filaments at least partially embedded in the at one insulative substrate and extending at least mainly along both electrically parallel and geometrically parallel paths between the at least one first common terminal and the at least one second common terminal.

摘要翻译： 均匀的加热组件，其包括至少一个第一绝缘衬底，至少一个第一公共端子，至少一个第二公共端子和多个导电细丝，其至少部分地嵌入在一个绝缘衬底中并且至少主要沿着电平行延伸 以及所述至少一个第一公共端子和所述至少一个第二公共端子之间的几何平行路径。

公开(公告)号：US08399806B2

公开(公告)日：2013-03-19

申请号：US12631573

申请日：2009-12-04

申请人： Chang-Hyun Son ,  Byung Yong Yoo ,  Ki-Hwan Kim ,  Yun-Geon Baek ,  Sang-Dong Park

发明人： Chang-Hyun Son ,  Byung Yong Yoo ,  Ki-Hwan Kim ,  Yun-Geon Baek ,  Sang-Dong Park

IPC分类号： H05B1/00

CPC分类号： F24C15/101

摘要： Provided is a built-in type cooker including a heat dissipation part connected to an electronic component and exposed to the outside of the cabinet. The built-in type cooker include a cabinet having an upwardly opened polyhedral shape, a top plate covering a top surface of the cabinet, the electronic component installed within the cabinet, and the heat dissipation part in which at least portion thereof is exposed to the side of the cabinet, the heat dissipation part being connected to the electronic component.

摘要翻译： 提供一种内置式炊具，其包括连接到电子部件并暴露于机壳外部的散热部。 内置式炊具包括具有向上开口的多面体形状的机壳，覆盖机壳顶表面的顶板，安装在机壳内的电子部件和散热部分，其中至少部分暴露于 所述散热部连接到所述电子部件。

公开(公告)号：US08395094B2

公开(公告)日：2013-03-12

申请号：US12699120

申请日：2010-02-03

申请人： Michael Long

发明人： Michael Long

IPC分类号： H05B1/00

CPC分类号： H05B1/00

摘要： A heating structure includes an opening that surrounds a heating element and a heat transfer element. Each heat transfer element is disposed between an exterior surface of the heating element and an interior surface of the opening. A clamping mechanism is used to clamp each heating element against a heat transfer element. Each heat transfer element partially surrounds a heating element and is configured to create at least two elongated and spatially separate contact regions along a length of the heating element. The at least two contact regions form a line of contact between the heating element and the interior surface of the opening when the heating element is clamped against the heat transfer element. The at least two contact regions allow the heating element to transfer heat to the opening and to the tooling device. The clamping mechanism may also be used to transfer heat to the tooling device.

摘要翻译： 加热结构包括围绕加热元件和传热元件的开口。 每个传热元件设置在加热元件的外表面和开口的内表面之间。 夹紧机构用于将每个加热元件夹紧在传热元件上。 每个传热元件部分地围绕加热元件，并且构造成沿着加热元件的长度产生至少两个细长的和空间上分离的接触区域。 当加热元件被夹紧在传热元件上时，至少两个接触区域在加热元件和开口的内表面之间形成接触线。 至少两个接触区域允许加热元件将热量传递到开口和加工装置。 夹紧机构也可用于将热量传递到加工装置。

公开(公告)号：US20130043229A1

公开(公告)日：2013-02-21

申请号：US13657265

申请日：2012-10-22

申请人： Dainippon Screen Mfg. Co. Ltd.

发明人： Hiroki Kiyama ,  Kenichi Yokouchi

IPC分类号： H05B1/00

CPC分类号： H01L21/67115

摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.