公开(公告)号：US08237866B2

公开(公告)日：2012-08-07

申请号：US12592766

申请日：2009-12-02

Applicant: Patricia Chiang Wei Yin

Inventor： Patricia Chiang Wei Yin

IPC: H04N9/78

CPC classification number: H04N9/78

Abstract: A system, apparatus and method are disclosed for separating a current frame of a composite video signal into a luminance signal and a chroma signal. A relative chroma correlation value is generated using a plurality of lines of the current frame. A weighted sum of inter-line pixel differences of the current frame is generated using the relative chroma correlation value. A frame difference signal is generated by subtracting a previous frame of the composite video signal from the current frame. A detected motion signal is generated that corresponds to motion detected in the current frame. The weighted sum of inter-line pixel differences, the frame difference signal, and the detected motion signal are combined to generate the chroma signal. The chroma signal is subtracted from the current frame to generate the luminance signal.

Abstract translation: 公开了一种用于将复合视频信号的当前帧分离为亮度信号和色度信号的系统，装置和方法。 使用当前帧的多行生成相对色度相关值。 使用相对色度相关值产生当前帧的行间像素差的加权和。 通过从当前帧减去复合视频信号的前一帧来产生帧差信号。 产生与当前帧中检测到的运动对应的检测到的运动信号。 线间像素差的加权和，帧差信号和检测到的运动信号被组合以产生色度信号。 从当前帧中减去色度信号以产生亮度信号。

公开(公告)号：US08228972B2

公开(公告)日：2012-07-24

申请号：US12132923

申请日：2008-06-04

Applicant: Davide Tonietto ,  John Hogeboom

Inventor： Davide Tonietto ,  John Hogeboom

IPC: H04B1/38

CPC classification number: H04L25/03343 ,  H04L1/205 ,  H04L1/243 ,  H04L2025/03356

Abstract: A first device transmits data over a first branch of a communications link toward a second device. That second device loops the received data pattern back over a second branch of the communications link. A bit error rate of the looped back data pattern is determined and a pre-emphasis applied to the transmitted data pattern is adjusted in response thereto. The first device further perturbs the data pattern communications signal so as to increase the bit error rate. The pre-emphasis is adjusted so as to reduce the determined bit error rate in the looped back data pattern in the presence of the perturbation. The steps for perturbing the signal and adjusting the pre-emphasis are iteratively performed, with the perturbation of the signal increasing with each iteration and adjustment of the pre-emphasis being refined with each iteration. The signal is perturbing by injecting modulation jitter into the signal (increasing each iteration) and adjusting amplitude of the signal (decreasing each iteration).

Abstract translation: 第一设备通过通信链路的第一分支向第二设备发送数据。 该第二设备将所接收的数据模式循环通过通信链路的第二分支。 确定环回数据模式的误码率，并响应于此来调整应用于发送数据模式的预加重。 第一设备进一步扰乱数据模式通信信号，以增加误码率。 调整预加重，以便在存在扰动的情况下减少确定的循环数据模式中的误码率。 迭代地执行用于干扰信号和调整预加重的步骤，随着每个迭代的信号的扰动增加，并且每次迭代改进预加重的调整。 该信号通过将调制抖动注入到信号（增加每次迭代）并调整信号的幅度（每次迭代减少）来扰乱。

公开(公告)号：US20120176065A1

公开(公告)日：2012-07-12

申请号：US13424481

申请日：2012-03-20

Applicant: Eric Danstrom

Inventor： Eric Danstrom

IPC: H05B37/02

CPC classification number: G09G3/32 ,  G09G2320/0626

Abstract: A plurality of resistive paths are coupled in parallel to a common node. A high side driver is operable responsive to first control signals to selectively supply current to certain ones of the resistive paths. A low side driver, including a plurality of selectively actuated current sink paths, is provided to sink current from the common node. A control logic circuit actuates a current sink path within the low side driver for each resistive path that is selectively supplied current by the high side driver. A substantially constant low side voltage drop through these sink paths is provided regardless of the number of resistive paths that are supplied current by the high side driver. A switched high side and low side configuration operating in an analogous way is also disclosed.

Abstract translation: 多个电阻路径并联耦合到公共节点。 高侧驱动器可响应于第一控制信号而操作以选择性地向某些电阻路径提供电流。 提供包括多个选择性致动的电流吸收通路的低侧驱动器以从公共节点吸收电流。 控制逻辑电路为每个电阻路径驱动低侧驱动器内的电流吸收通道，该电阻通路被高侧驱动器选择性地供电。 无论高侧驱动器提供电流的电阻路径的数量如何，均提供通过这些汇流道的基本上恒定的低侧电压降。 还公开了以类似方式操作的切换的高侧和低侧配置。

公开(公告)号：US08219771B2

公开(公告)日：2012-07-10

申请号：US11583746

申请日：2006-10-19

Applicant: Olivier Le Neel

Inventor： Olivier Le Neel

IPC: G06F12/00 ,  G06F13/00 ,  G06F13/28

CPC classification number: G06F21/6218 ,  G06F19/00 ,  G16H10/65

Abstract: A portable housing capable of being carried by a certain person includes a circuit. The circuit includes a memory for storing private data concerning that certain person, a circuit operable to effectuate storage of the private data in the memory in a secure manner, and a processing unit operable to control access to the memory for purposes of reading private data concerning the certain person from the memory and storing private data concerning the certain person to the memory. The conditions under which access to the memory for read and write operations with respect to the private data is permitted are governed by parameters that are specified by the certain person to whom the stored private data concerns. A biometric sensor may also be included to capture identification information useful in implementing the operations for controlling access to the memory.

Abstract translation: 能够由某人携带的便携式外壳包括电路。 该电路包括用于存储关于该特定人的私人数据的存储器，可操作以以安全方式实现存储器中私有数据的存储的电路;以及处理单元，用于控制对存储器的访问，以便读取关于 某人从记忆中存储有关某人的私人数据到记忆体。 允许访问用于对私有数据进行读写操作的存储器的条件由被存储的私有数据涉及的某个人指定的参数来管理。 还可以包括生物测定传感器以捕获在实现用于控制对存储器的访问的操作中有用的识别信息。

公开(公告)号：US20120168896A1

公开(公告)日：2012-07-05

申请号：US12981383

申请日：2010-12-29

Applicant: Ming Fang

Inventor： Ming Fang

IPC: H01L27/24 ,  H01L21/78

CPC classification number: H01L27/24 ,  B41J2/1601 ,  B41J2/1607 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1635 ,  B41J2/1639 ,  B41J2/1643 ,  B81C1/00246 ,  G01P15/00

Abstract: A method of manufacturing double-sided semiconductor die by performing a first plurality of processes to a first side of a wafer and performing a second plurality of processes to a second side of the wafer, thereby forming at least a first semiconductor device on the first side of the wafer and at least a second semiconductor device on the second side of the wafer. The wafer may be cut to form a plurality of die having at least one semiconductor device on each side.

Abstract translation: 一种通过对晶片的第一面执行第一多个工艺并对晶片的第二侧执行第二多个工艺来制造双面半导体管芯的方法，从而在第一侧上形成至少第一半导体器件 以及晶片第二面上的至少第二半导体器件。 可以切割晶片以形成在每一侧具有至少一个半导体器件的多个裸片。

公开(公告)号：US20120166687A1

公开(公告)日：2012-06-28

申请号：US12976189

申请日：2010-12-22

Applicant: James G. Baker

Inventor： James G. Baker

IPC: G06F3/00 ,  G06F13/20

CPC classification number: G06F13/105

Abstract: A shadow hardware system and method is provided. The shadow hardware system provides an interface between an access device and shadowed devices. Shadowed devices are devices that the shadow hardware system provides an interface to the access device although the shadowed device may not actually be present or available to the access device, such as implementing a disk drive as flash memory. The access device, such as a host processor, issues requests to a disk drive and the shadow hardware system converts the requests to requests suitable for the flash memory. A shadow remapper redirects the requests to shadow registers and notifies the shadow controller of the pending request. The shadow controller accesses the shadow registers and modifies the registers (if necessary) before forwarding the registers to the actual hardware devices. Any suitable device may be shadowed.

Abstract translation: 提供影子硬件系统和方法。 影子硬件系统提供访问设备和被遮蔽设备之间的接口。 阴影设备是影子硬件系统为访问设备提供接口的设备，尽管受影响的设备实际上可能不存在或可用于接入设备，例如将磁盘驱动器实现为闪存。 诸如主处理器的访问设备向磁盘驱动器发出请求，并且影子硬件系统将请求转换为适合于闪存的请求。 影子重映射器将请求重定向到影子寄存器，并向影子控制器通知挂起的请求。 影子控制器访问影子寄存器并修改寄存器（如有必要），然后将寄存器转发到实际的硬件设备。 任何合适的设备都可能被遮蔽。

公开(公告)号：US20120154273A1

公开(公告)日：2012-06-21

申请号：US13037775

申请日：2011-03-01

Applicant: Darryn D. McDade, SR. ,  Hamid Mohammadi

Inventor： Darryn D. McDade, SR. ,  Hamid Mohammadi

IPC: G06F3/033 ,  G06F3/041

CPC classification number: G06F3/03547 ,  G06F3/0338 ,  G06F3/041

Abstract: A method and apparatus for touch detection, multi-touch detection and cursor control in which the acceleration of a control surface is sensed to provide sensed signals. The control surface is supported at one or more support positions and moves in response to a force applied by a user at a touch position. The sensed signals are received in a processing unit where they are used to estimate a change in the position of force application. A touch control signal is generated from the estimated change in touch position. The touch control signal may be output to a graphical user interface, where it may be used, for example, to control various elements such as mouse clicks, scroll controls, control of single or multiple cursors, or manipulation of views of an object on a visual display unit, or remote control manipulation of objects themselves.

Abstract translation: 一种用于触摸检测，多点触摸检测和光标控制的方法和装置，其中感测控制表面的加速度以提供感测信号。 控制表面被支撑在一个或多个支撑位置，并响应于使用者在触摸位置施加的力而移动。 感测到的信号被接收在处理单元中，在处理单元中，它们用于估计施加力的位置的变化。 从估计的触摸位置变化产生触摸控制信号。 触摸控制信号可以被输出到图形用户界面，其中例如可以使用它来控制诸如鼠标点击，滚动控件，单个或多个光标的控制或者对一个对象的视图的操纵的各种元素 视觉显示单元或对象本身的远程控制操作。

公开(公告)号：US20120146152A1

公开(公告)日：2012-06-14

申请号：US12963474

申请日：2010-12-08

Applicant: Barry Dove

Inventor： Barry Dove

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/78 ,  H01L21/76232 ,  H01L21/764 ,  H01L29/6656 ,  H01L29/7843 ,  H01L29/7846

Abstract: A shallow trench isolation is formed in a semiconductor substrate adjacent a MOS transistor. The shallow trench is filled with a fill material while other processing steps are performed. The fill material is later removed through a thin well etched into layers above the trench, leaving the trench hollow. A thin strain inducing layer is then formed on the sidewall of the hollow trench. The well is then plugged, leaving the trench substantially hollow except for the thin strain inducing layer on the sidewall of the trench. The strain inducing layer is configured to induce compressive or tensile strain on a channel region of the MOS transistor and thereby to enhance conduction properties of the transistor.

Abstract translation: 在与MOS晶体管相邻的半导体衬底中形成浅沟槽隔离。 浅沟槽填充有填充材料，同时执行其他处理步骤。 填充材料稍后通过蚀刻到沟槽上方的薄的阱中去除，留下沟槽中空。 然后在中空沟槽的侧壁上形成薄的应变诱导层。 然后将孔插入，留下沟槽基本上是中空的，除了沟槽侧壁上的薄应变诱导层。 应变诱导层被配置为在MOS晶体管的沟道区域上引起压缩或拉伸应变，从而增强晶体管的导电特性。

公开(公告)号：US08199707B2

公开(公告)日：2012-06-12

申请号：US12118563

申请日：2008-05-09

Applicant: Wendong Hu

Inventor： Wendong Hu

IPC: H04W72/00 ,  H04W72/04 ,  H04W74/04 ,  H04W28/26

CPC classification number: H04W72/1278 ,  H04W8/005 ,  H04W28/26 ,  H04W48/08 ,  H04W72/1257

Abstract: A self-coexistence window reservation protocol for a plurality of Wireless Regional Area Network (WRAN) cells operating in a WRAN over a plurality of channels includes a sequence of self-coexistence windows that uniquely identifies a transmission period for each WRAN cell. A self-coexistence window reservation protocol is included within the first packet of a Coexistence Beaconing Protocol period identifying when each WRAN cell associated with a particular channel will transmit. When not actively transmitting, a WRAN cells remains in a passive, receiving mode to accept data. As the transmissions of each WRAN cell operating on a particular channel are scheduled, contention for a transmission period is eliminated.

Abstract translation: 用于在多个信道中以WRAN操作的多个无线区域网（WRAN）小区的自共存窗口预约协议包括唯一地标识每个WRAN小区的传输周期的自共存窗口序列。 自共享窗口预留协议包括在共存信标协议周期的第一分组中，以识别与特定信道相关联的每个WRAN小区何时将发送。 当不主动发送时，WRAN信元保持在被动接收模式以接受数据。 当调度在特定信道上操作的每个WRAN小区的传输时，消除了传输周期的争用。

公开(公告)号：US20120142121A1

公开(公告)日：2012-06-07

申请号：US12960736

申请日：2010-12-06

Applicant: Prasanna Khare ,  Nicolas Loubet ,  Qing Liu

Inventor： Prasanna Khare ,  Nicolas Loubet ,  Qing Liu

IPC: H01L21/306

CPC classification number: H01L21/02661 ,  H01L21/02639 ,  H01L29/66628 ,  H01L29/66636

Abstract: A raised source-drain structure is formed using a process wherein a semiconductor structure is received in a process chamber that is adapted to support both an etching process and an epitaxial growth process. This semiconductor structure includes a source region and a drain region, wherein the source and drain regions each include a damaged surface layer. The process chamber is controlled to set a desired atmosphere and set a desired temperature. At the desired atmosphere and temperature, the etching process of process chamber is used to remove the damaged surface layers from the source and drain regions and expose an interface surface. Without releasing the desired atmosphere and while maintaining the desired temperature, the epitaxial growth process of the process chamber is used to grow, from the exposed interface surface, a raised region above each of the source and drain regions.

Abstract translation: 使用其中半导体结构被接收在适于支持蚀刻工艺和外延生长工艺两者的处理室中的工艺来形成凸起的源极 - 漏极结构。 该半导体结构包括源极区和漏极区，其中源区和漏区各自包括受损的表面层。 控制处理室以设定所需的气氛并设定所需的温度。 在所需的气氛和温度下，处理室的蚀刻过程用于从源极和漏极区域去除损坏的表面层并暴露界面。 在不释放期望的气氛的同时保持期望的温度，处理室的外延生长过程用于从暴露的界面表面生长在源极和漏极区之上的凸起区域。