公开(公告)号：US20220076976A1

公开(公告)日：2022-03-10

申请号：US17310680

申请日：2020-02-19

Applicant: Veeco Instruments Inc.

Inventor： Michael W. Pacier ,  Michael J. Sershen ,  Adam F. Bertuch ,  Laurent Lecordier ,  Thousif Ahamad Khan Hosakote Buden ,  Ramesh Prasad Manchaladore Narahari Rao

IPC: H01L21/677 ,  C23C16/52 ,  C23C16/455

Abstract: Fully automated batch production thin film deposition systems configured to deliver uniformity combined with high throughput at a low cost-per-wafer. In some examples, systems of the present disclosure include automated safe wafer handling via low-impact batch transfer via transportable wafer racks loaded with a plurality of wafers. In some examples, systems include a modular pre-heat & cool-down architecture that enables a flexible thermal management solution tailored around particular specifications.

公开(公告)号：US11248295B2

公开(公告)日：2022-02-15

申请号：US16205613

申请日：2018-11-30

Applicant: Veeco Instruments Inc.

Inventor： Sandeep Krishnan ,  Lukas Urban

IPC: C23C16/458 ,  C30B25/12

Abstract: A wafer carrier for use in a chemical vapor deposition (CVD) system includes a plurality of wafer retention pockets, each having a peripheral wall surface surrounding a floor surface and defining a periphery of that wafer retention pocket. Each wafer retention pocket has a periphery with a shape defined by at least a first arc having a first radius of curvature situated around a first arc center and a second arc having a second radius of curvature situated around a second arc center. The second arc is different from the first arc, either by its radius of curvature, arc center, or both.

公开(公告)号：US20210404051A1

公开(公告)日：2021-12-30

申请号：US17475027

申请日：2021-09-14

Applicant: VEECO INSTRUMENTS, INC.

Inventor： Narasimhan SRINIVASAN ,  Tania HENRY ,  Frank CERIO ,  Paul TURNER ,  Vincent IP ,  Rutvik MEHTA

IPC: C23C14/34 ,  H01J37/34 ,  H01L21/3205

Abstract: Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented α(110) grains having a resistivity less than 9 μΩ-cm and thickness less than 300 Å, with no discernable β-phase. A resulting thin ruthenium film has a resistivity less than 10 μΩ-cm and a thickness less than 300 Å.

公开(公告)号：USD921431S1

公开(公告)日：2021-06-08

申请号：US29685939

申请日：2019-04-01

Applicant: Veeco Instruments, Inc.

Designer： Sandeep Krishnan ,  Bojan Mitrovic ,  Aniruddha Bagchi ,  Alexander Gurary ,  Chenghung Paul Chang ,  Ian Kunsch ,  Matthew J. Van Doren

公开(公告)号：US20200248307A1

公开(公告)日：2020-08-06

申请号：US16752661

申请日：2020-01-26

Applicant: Veeco Instruments, Inc.

Inventor： Alexander I. Gurary ,  Sandeep Krishnan ,  Yuliy Rashkovsky ,  Todd Luse ,  Gaurab Samanta

IPC: C23C16/458 ,  H01L21/687

Abstract: A substrate carrier that supports a semiconductor substrate in a chemical vapor deposition system that includes a support having a beveled inner top surface including a top surface and a bottom surface. The top surface has a recessed area for receiving at least one substrate for chemical vapor deposition processing. The bottom surface has a beveled edge that forms a conical interface with the beveled inner top surface of the support at a self-locking angle that prevents substrate carrier movement in a vertical direction at a predetermined temperature equal to a maximum operation temperature. A coefficient of thermal expansion of a material forming the substrate carrier is substantially the same as a coefficient of thermal expansion of a material forming the support.

公开(公告)号：US10718052B2

公开(公告)日：2020-07-21

申请号：US15382216

申请日：2016-12-16

Applicant: Veeco Instruments Inc.

Inventor： Louise S. Barriss ,  Richard A. Comunale ,  Roger P. Fremgen ,  Alexander I. Gurary ,  Todd A. Luse ,  Robert White Milgate ,  John D. Pollock

IPC: C23C16/458 ,  H01L21/687 ,  C30B25/12 ,  C23C16/46 ,  C30B25/08 ,  C30B25/10 ,  C23C16/52

Abstract: A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shaft so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition.

公开(公告)号：US10438795B2

公开(公告)日：2019-10-08

申请号：US15178723

申请日：2016-06-10

Applicant: Veeco Instruments, Inc.

Inventor： Sandeep Krishnan ,  Alexander I. Gurary ,  Chenghung Paul Chang ,  Earl Marcelo

IPC: C23C16/46 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  C23C16/458 ,  C23C16/455 ,  H01L21/285

Abstract: A self-centering wafer carrier system for a chemical vapor deposition (CVD) reactor includes a wafer carrier comprising an edge. The wafer carrier at least partially supports a wafer for CVD processing. A rotating tube comprises an edge that supports the wafer carrier during processing. An edge geometry of the wafer carrier and an edge geometry of the rotating tube being chosen to provide a coincident alignment of a central axis of the wafer carrier and a rotation axis of the rotating tube during process at a desired process temperature.

公开(公告)号：USD858469S1

公开(公告)日：2019-09-03

申请号：US29641930

申请日：2018-03-26

Applicant: Veeco Instruments Inc.

Designer： Sandeep Krishnan ,  Yuliy Rashkovsky ,  Alexander Gurary ,  Leo Chin ,  Mandar Deshpande

公开(公告)号：US10364509B2

公开(公告)日：2019-07-30

申请号：US15960785

申请日：2018-04-24

Applicant: Veeco Instruments Inc.

Inventor： Michael Murphy ,  Richard Hoffman ,  Jonathan Cruel ,  Lev Kadinski ,  Jeffrey C. Ramer ,  Eric A. Armour

IPC: C30B25/14 ,  C23C16/455 ,  C23C16/458 ,  C30B25/16 ,  C30B25/08 ,  C30B25/12 ,  C23C16/52

Abstract: In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.

公开(公告)号：US10316412B2

公开(公告)日：2019-06-11

申请号：US13450062

申请日：2012-04-18

Applicant: Sandeep Krishnan ,  Jeffrey Scott Montgomery ,  Lukas Urban ,  Alexander I. Gurary ,  Yuliy Rashkovsky

Inventor： Sandeep Krishnan ,  Jeffrey Scott Montgomery ,  Lukas Urban ,  Alexander I. Gurary ,  Yuliy Rashkovsky

IPC: C23C16/458 ,  H01L21/687

Abstract: A wafer carrier for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. Each pocket includes a floor surface and a peripheral wall surface surrounding the floor surface and defining a periphery of that pocket. Each pocket has a center situated along a corresponding wafer carrier radial axis. In each of the pockets, a set of bumpers is positioned primarily at a distal portion of the wafer retention pocket opposite the central axis so as to maintain a gap of at least a predefined size between the peripheral wall surface at the distal portion and an edge of a wafer to be placed in the wafer retention pocket.