公开(公告)号：US08455277B2

公开(公告)日：2013-06-04

申请号：US13523767

申请日：2012-06-14

申请人： Je-Hun Lee ,  Sung-Jin Kim ,  Hee-Joon Kim ,  Chang-Oh Jeong

发明人： Je-Hun Lee ,  Sung-Jin Kim ,  Hee-Joon Kim ,  Chang-Oh Jeong

IPC分类号： H01L21/84

CPC分类号： G02F1/13439 ,  G02F1/13458 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

摘要： A thin film transistor array panel is provided, which includes a plurality of gate lines, a plurality of common electrodes, a gate insulating layer covering the gate lines and the common electrodes, a plurality of semiconductor layers formed on the gate insulating layer, a plurality of data lines including a plurality of source electrodes and formed on the semiconductor layer, a plurality of drain electrodes formed on the semiconductor layer, and a plurality of pixel electrodes overlapping the common electrodes and connected to the drain electrodes. Because the common electrodes are made of ITON, IZON, or a-ITON, or a double layer of ITO/ITON, IZO/IZON, or a-a-ITO/a-ITON, when H2 or SiH4 are injected to form a silicon nitride (SiNX) layer on the common electrodes, the opaque metal Sn or Zn is not produced on the surfaces of the common electrode.

摘要翻译： 提供薄膜晶体管阵列面板，其包括多个栅极线，多个公共电极，覆盖栅极线和公共电极的栅极绝缘层，形成在栅极绝缘层上的多个半导体层，多个 包括多个源电极并形成在半导体层上的数据线，形成在半导体层上的多个漏电极以及与公共电极重叠并连接到漏电极的多个像素电极。 由于公共电极由ITON，IZON或者-IONON制成，或者是将双重层的ITO / ITON，IZO / IZON或者a-ITO / a-ITON，当注入H 2或SiH 4以形成氮化硅时 SiNX）层，在公共电极的表面上不产生不透明金属Sn或Zn。

公开(公告)号：US08450850B2

公开(公告)日：2013-05-28

申请号：US13193413

申请日：2011-07-28

申请人： Hong Long Ning ,  Chang-Oh Jeong ,  Ji-Young Park ,  Sang-Gab Kim ,  Sung-Haeng Cho ,  Yeon-Hong Kim ,  Jin-Su Byun

发明人： Hong Long Ning ,  Chang-Oh Jeong ,  Ji-Young Park ,  Sang-Gab Kim ,  Sung-Haeng Cho ,  Yeon-Hong Kim ,  Jin-Su Byun

IPC分类号： H01L23/52

CPC分类号： H01L29/458 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/76877 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/78684 ,  H01L51/0048 ,  H01L2221/1094

摘要： Provided are a thin-film transistor (TFT) substrate and a method of manufacturing the same. The method includes: forming a passivation film by forming an insulating film on a substrate; forming a photoresist pattern by forming a photoresist film on the passivation film, exposing the photoresist film to light, and developing the photoresist film; performing a first dry-etching by dry-etching the passivation film using the photoresist pattern as an etch mask; performing a baking to reduce a size of the photoresist pattern; performing a second dry-etching to form a contact hole by dry-etching the passivation film again using the photoresist pattern as a mask; removing the photoresist pattern; and forming a pixel electrode of a carbon composition that includes carbon nanotubes and/or graphene on a top surface of the passivation film.

摘要翻译： 提供一种薄膜晶体管（TFT）基板及其制造方法。 该方法包括：通过在基板上形成绝缘膜来形成钝化膜; 通过在钝化膜上形成光致抗蚀剂膜形成光致抗蚀剂图案，将光致抗蚀剂膜曝光并使光致抗蚀剂膜显影; 通过使用光致抗蚀剂图案作为蚀刻掩模来干蚀刻钝化膜来执行第一干蚀刻; 进行烘烤以减小光致抗蚀剂图案的尺寸; 通过使用光致抗蚀剂图案作为掩模再次干蚀刻钝化膜来进行第二次干蚀刻以形成接触孔; 去除光致抗蚀剂图案; 以及在钝化膜的顶表面上形成包括碳纳米管和/或石墨烯的碳组合物的像素电极。

公开(公告)号：US08372701B2

公开(公告)日：2013-02-12

申请号：US12576217

申请日：2009-10-08

申请人： Je-Hun Lee ,  Yang-Ho Bae ,  Beom-Seok Cho ,  Chang-Oh Jeong

发明人： Je-Hun Lee ,  Yang-Ho Bae ,  Beom-Seok Cho ,  Chang-Oh Jeong

IPC分类号： H01L21/00

CPC分类号： H01L27/1214 ,  H01L27/1225 ,  H01L27/124

摘要： The present invention provides a thin film transistor array panel comprising an insulating substrate; a gate line formed on the insulating substrate; a gate insulating layer formed on the gate line; a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode being adjacent to the source electrode with a gap therebetween; and a pixel electrode coupled to the drain electrode, wherein at least one of the gate line, the data line, and the drain electrode comprises a first conductive layer comprising a conductive oxide and a second conductive layer comprising copper (Cu).

公开(公告)号：US08330916B2

公开(公告)日：2012-12-11

申请号：US12344075

申请日：2008-12-24

申请人： Je-Hun Lee ,  Do-Hyun Kim ,  Tae-Sang Kim ,  Kyung-Seok Son ,  Chang-Oh Jeong

发明人： Je-Hun Lee ,  Do-Hyun Kim ,  Tae-Sang Kim ,  Kyung-Seok Son ,  Chang-Oh Jeong

IPC分类号： G02F1/1343

CPC分类号： H01L33/0095 ,  G02F1/133512 ,  G02F1/133516 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/133397 ,  G02F2001/136222 ,  G02F2001/136231 ,  G02F2001/13685 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458

摘要： A liquid crystal display (LCD) includes thin film transistors (TFTs) each having spaced apart source/drain electrodes and an oxide-type semiconductive film disposed over and between the source/drain electrodes to define an active layer. Each of the source/drain electrodes includes a portion of a subdivided transparent conductive layer where one subdivision of the transparent conductive layer continues from within its one of the source/drain electrodes to define an optically exposed pixel-electrode that is reliably connected integrally to the one source/drain electrode. Mass production costs can be reduced and production reliability increased because a fewer number of photolithographic masks can be used to form the TFTs.

摘要翻译： 液晶显示器（LCD）包括薄膜晶体管（TFT），每个薄膜晶体管具有间隔开的源/漏电极和设置在源/漏电极之间和之间的氧化物型半导体膜，以限定有源层。 源/漏电极中的每一个包括细分透明导电层的一部分，其中透明导电层的一个细分从其源极/漏极之一内延伸，以限定光学曝光的像素电极，其可靠地与 一个源/漏电极。 由于可以使用较少数量的光刻掩模来形成TFT，所以可以降低批量生产成本并提高生产可靠性。

公开(公告)号：US08288771B2

公开(公告)日：2012-10-16

申请号：US13204553

申请日：2011-08-05

申请人： Je-Hun Lee ,  Sung-Jin Kim ,  Hee-Joon Kim ,  Chang-Oh Jeong

发明人： Je-Hun Lee ,  Sung-Jin Kim ,  Hee-Joon Kim ,  Chang-Oh Jeong

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L21/84

CPC分类号： G02F1/13439 ,  G02F1/13458 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

摘要： A thin film transistor array panel is provided, which includes a substrate, a plurality of gate line formed on the substrate, a plurality of common electrodes having a transparent conductive layer on the substrate, a gate insulating layer covering the gate lines and the common electrodes, a plurality of semiconductor layers formed on the gate insulating layer, a plurality of data lines including a plurality of source electrodes and formed on the semiconductor layer and the gate insulating layer, a plurality of drain electrodes formed on the semiconductor layer and the gate insulating layer, and a plurality of pixel electrodes overlapping the common electrodes and connected to the drain electrodes. Because the common electrodes are made of ITON, IZON, or a-ITON, or a double layer of ITO/ITON, IZO/IZON, or a-a-ITO/a-ITON, when H2 or SiH4 are injected to form a silicon nitride (SiNX) layer on the common electrodes, the opaque metal Sn or Zn in which the metal component is reduced in the IZO, ITO, or a-ITO is not produced on the surfaces of the common electrode.

公开(公告)号：US08252639B2

公开(公告)日：2012-08-28

申请号：US12951981

申请日：2010-11-22

申请人： Je-Hun Lee ,  Beom-Seok Cho ,  Chang-Oh Jeong ,  Joo-Han Kim

发明人： Je-Hun Lee ,  Beom-Seok Cho ,  Chang-Oh Jeong ,  Joo-Han Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  H01L27/1288 ,  H01L29/12 ,  H01L29/458

摘要： The present invention provides a thin film transistor array panel comprising: an insulating substrate; a gate line formed on the insulating substrate and having a gate electrode; a gate insulating layer formed on the gate line; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; diffusion barriers formed on the semiconductor and containing nitrogen; a data line crossing the gate line and having a source electrode partially contacting the diffusion barriers; a drain electrode partially contacting the diffusion barriers and facing the source electrode on the gate electrode; and a pixel electrode electrically connected to the drain electrode.

摘要翻译： 本发明提供一种薄膜晶体管阵列板，包括：绝缘基板; 形成在所述绝缘基板上并具有栅电极的栅极线; 栅极绝缘层，形成在栅极线上; 形成在所述栅极绝缘层上且与所述栅电极重叠的半导体; 在半导体上形成并含有氮的扩散阻挡层; 跨越栅极线并且具有部分地接触扩散阻挡层的源电极的数据线; 漏电极部分地接触扩散阻挡层并面对栅电极上的源电极; 以及电连接到漏电极的像素电极。

公开(公告)号：US20120112346A1

公开(公告)日：2012-05-10

申请号：US13193413

申请日：2011-07-28

申请人： Hong Long NING ,  Chang-Oh Jeong ,  Ji-Young Park ,  Sang-Gab Kim ,  Sung-Haeng Cho ,  Yeon-Hong Kim ,  Jin-Su Byun

发明人： Hong Long NING ,  Chang-Oh Jeong ,  Ji-Young Park ,  Sang-Gab Kim ,  Sung-Haeng Cho ,  Yeon-Hong Kim ,  Jin-Su Byun

IPC分类号： H01L23/532 ,  B82Y40/00 ,  B82Y20/00 ,  H01L21/768

CPC分类号： H01L29/458 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/76877 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/78684 ,  H01L51/0048 ,  H01L2221/1094

摘要： Provided are a thin-film transistor (TFT) substrate and a method of manufacturing the same. The method includes: forming a passivation film by forming an insulating film on a substrate; forming a photoresist pattern by forming a photoresist film on the passivation film, exposing the photoresist film to light, and developing the photoresist film; performing a first dry-etching by dry-etching the passivation film using the photoresist pattern as an etch mask; performing a baking to reduce a size of the photoresist pattern; performing a second dry-etching to form a contact hole by dry-etching the passivation film again using the photoresist pattern as a mask; removing the photoresist pattern; and forming a pixel electrode of a carbon composition that includes carbon nanotubes and/or graphene on a top surface of the passivation film.

摘要翻译： 提供一种薄膜晶体管（TFT）基板及其制造方法。 该方法包括：通过在基板上形成绝缘膜来形成钝化膜; 通过在钝化膜上形成光致抗蚀剂膜形成光致抗蚀剂图案，将光致抗蚀剂膜曝光并使光致抗蚀剂膜显影; 通过使用光致抗蚀剂图案作为蚀刻掩模来干蚀刻钝化膜来执行第一干蚀刻; 进行烘烤以减小光致抗蚀剂图案的尺寸; 通过使用光致抗蚀剂图案作为掩模再次干蚀刻钝化膜来进行第二次干蚀刻以形成接触孔; 去除光致抗蚀剂图案; 以及在钝化膜的顶表面上形成包括碳纳米管和/或石墨烯的碳组合物的像素电极。

公开(公告)号：US20120052638A1

公开(公告)日：2012-03-01

申请号：US13191833

申请日：2011-07-27

申请人： Hyung-Jun KIM ,  Chang-Oh JEONG ,  Il-Yong YOON

发明人： Hyung-Jun KIM ,  Chang-Oh JEONG ,  Il-Yong YOON

IPC分类号： H01L21/336

CPC分类号： H01L21/268 ,  H01L21/02675 ,  H01L21/02678 ,  H01L27/1229 ,  H01L27/1274 ,  H01L29/66765 ,  H01L29/78696

摘要： A method of fabricating a thin-film transistor (TFT) substrate includes forming a gate electrode on a substrate; forming an insulating film on the gate electrode; forming an amorphous semiconductor pattern on the insulating film; and forming a source electrode separated from a drain electrode on the amorphous semiconductor pattern; forming a light-concentrating layer, which includes a protrusion, on the amorphous semiconductor pattern, the source electrode, and the drain electrode; and crystallizing at least part of the amorphous semiconductor pattern by irradiating light to the protrusion of the light-concentrating layer.

摘要翻译： 制造薄膜晶体管（TFT）基板的方法包括在基板上形成栅电极; 在栅电极上形成绝缘膜; 在所述绝缘膜上形成非晶半导体图案; 以及形成与所述非晶半导体图案上的漏电极分离的源电极; 在所述非晶半导体图案，所述源电极和所述漏电极上形成包括突起的聚光层; 以及通过向所述聚光层的所述突起照射光而使所述非晶半导体图案的至少一部分结晶。

公开(公告)号：US08077268B2

公开(公告)日：2011-12-13

申请号：US12140655

申请日：2008-06-17

申请人： Eun-Guk Lee ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Do-Hyun Kim ,  Soon-Kwon Lim

发明人： Eun-Guk Lee ,  Chang-Oh Jeong ,  Je-Hun Lee ,  Do-Hyun Kim ,  Soon-Kwon Lim

IPC分类号： G02F1/13

CPC分类号： H01L27/1225 ,  H01L29/7869

摘要： A thin film transistor array substrate comprising a base substrate, a first wire on the base substrate, a first insulating layer on the base substrate to cover the first wire, a semiconductor layer on the first insulating layer, a second insulating layer on the first insulating layer on which the semiconductor layer is formed, and a second wire on the second insulating layer on the second insulating layer is provided, and a portion of the second wire makes contact with the semiconductor layer through the contact hole.

摘要翻译： 一种薄膜晶体管阵列基板，包括基底基板，在基底基板上的第一布线，在基底基板上覆盖第一布线的第一绝缘层，第一绝缘层上的半导体层，第一绝缘层上的第二绝缘层 设置有半导体层的层，第二绝缘层上的第二绝缘层上的第二布线，第二布线的一部分通过接触孔与半导体层接触。

公开(公告)号：US20110285951A1

公开(公告)日：2011-11-24

申请号：US12897198

申请日：2010-10-04

申请人： Seon-mi YOON ,  Honglong NING ,  Chang-oh JEONG ,  Jae-young CHOI ,  Won-mook CHOI ,  Hyeon-jin SHIN

发明人： Seon-mi YOON ,  Honglong NING ,  Chang-oh JEONG ,  Jae-young CHOI ,  Won-mook CHOI ,  Hyeon-jin SHIN

IPC分类号： G02F1/1343 ,  B05D5/06 ,  H01B1/04 ,  B82Y20/00

CPC分类号： G02F1/13439 ,  B82Y10/00 ,  B82Y30/00 ,  C08L33/02 ,  Y10T428/1064

摘要： A carbon nanotube (“CNT”) composition includes CNTs, a dispersing agent containing a reactive functional group, and at least one kind of dispersion medium. A CNT layer structure includes a substrate and a CNT layer disposed on the substrate, the CNT layer including the CNT composition including the CNTs arranged in a network-shape, and an organic material adsorbed to the CNTs and chemically bonded to the substrate. A liquid crystal display device includes the CNT layer structure. A method of manufacturing the CNT layer structure uses the CNT composition. A method of manufacturing the liquid crystal display device includes forming a pixel electrode on a passivation layer, by using the method of manufacturing the CNT layer structure.

摘要翻译： 碳纳米管（“CNT”）组合物包括CNT，含有反应性官能团的分散剂和至少一种分散介质。 CNT层结构包括基板和设置在基板上的CNT层，CNT层包括CNT网络形状的碳纳米管组合物，以及吸附在CNT上的化学键合到基板上的有机材料。 液晶显示装置包括CNT层结构。 制造CNT层结构的方法使用CNT组合物。 制造液晶显示装置的方法包括：通过使用CNT层结构的制造方法，在钝化层上形成像素电极。