Linear type vibration motor having magnet casing
    82.
    发明授权
    Linear type vibration motor having magnet casing 失效
    具有磁铁外壳的线型振动电机

    公开(公告)号:US08446055B2

    公开(公告)日:2013-05-21

    申请号:US12815826

    申请日:2010-06-15

    CPC classification number: H02K1/34 H02K33/16

    Abstract: A linear type vibration motor having a magnet casing is disclosed. The linear type vibration motor in accordance with an embodiment of the present invention includes a magnet assembly having a pair of magnets, in which same magnetic poles thereof face each other, a magnet casing, which has a hollow part formed therein and houses the magnet assembly in the hollow part, a base, which has a bobbin formed thereon and in which the magnet casing is inserted into the bobbin, a coil, which is coupled to the bobbin, a weight, which is coupled to both ends of the magnet casing, and a pair of elastic bodies, which are interposed between either end of the base and either end of the weight, respectively. Thus, the operating lifetime of the linear type vibration motor can be extended, and this arrangement can prevent the linear type vibration motor from being damaged by an external shock.

    Abstract translation: 公开了一种具有磁体壳体的直线型振动电动机。 根据本发明的实施例的线型振动电动机包括具有一对磁体的磁体组件,其中相同的磁极彼此面对,具有形成在其中的中空部分并且容纳磁体组件的磁体壳体 在中空部分中,具有形成在其上并且磁体壳体插入到线轴中的线轴的基座,联接到线轴的线圈,耦合到磁体壳体的两端的重物, 以及分别插入基座的任一端和重物的任一端之间的一对弹性体。 因此,可以延长线型振动电动机的工作寿命,并且这种布置可以防止线型振动电动机被外部冲击损坏。

    CMOS image sensor
    86.
    发明授权
    CMOS image sensor 失效
    CMOS图像传感器

    公开(公告)号:US08309995B2

    公开(公告)日:2012-11-13

    申请号:US12820787

    申请日:2010-06-22

    Abstract: A unit pixel of a CMOS image sensor include a photodiode that transforms light to an electric charge, and accumulates the electric charge, and a plurality of transistors that generate an electric signal based on the accumulated electric charge. The photodiode has a slope shape based on incident angle of the light in a semiconductor substrate.

    Abstract translation: CMOS图像传感器的单位像素包括将光转换成电荷并累积电荷的光电二极管,以及基于累积电荷产生电信号的多个晶体管。 光电二极管具有基于半导体衬底中的光的入射角的斜率形状。

    IMAGE SENSOR INCLUDING GUARD RING AND NOISE BLOCKING AREA TO BLOCK NOISE AND METHOD OF MANUFACTURING THE SAME
    88.
    发明申请
    IMAGE SENSOR INCLUDING GUARD RING AND NOISE BLOCKING AREA TO BLOCK NOISE AND METHOD OF MANUFACTURING THE SAME 有权
    图像传感器包括防护环和噪声阻塞区域到阻塞噪声及其制造方法

    公开(公告)号:US20120104534A1

    公开(公告)日:2012-05-03

    申请号:US13286786

    申请日:2011-11-01

    CPC classification number: H01L27/1464 H01L27/1463 H01L27/14632 H01L27/14687

    Abstract: An image sensor including a deep guard ring and a noise blocking area and a method of manufacturing the same. The image sensor includes the deep guard ring and a deep P well surrounding the noise blocking area, thereby preventing crosstalk between adjacent pixels. In addition, an ion implantation layer is divided by the noise blocking area, so that substrate crosstalk is effectively eliminated.

    Abstract translation: 包括深保护环和噪声阻挡区域的图像传感器及其制造方法。 图像传感器包括深保护环和围绕噪声阻挡区域的深P阱,从而防止相邻像素之间的串扰。 此外,离子注入层被噪声阻挡区域分割,从而有效地消除了衬底串扰。

    UNIT PIXEL ARRAY AND IMAGE SENSOR HAVING THE SAME
    89.
    发明申请
    UNIT PIXEL ARRAY AND IMAGE SENSOR HAVING THE SAME 有权
    单元像素阵列和图像传感器

    公开(公告)号:US20120050600A1

    公开(公告)日:2012-03-01

    申请号:US13218550

    申请日:2011-08-26

    Abstract: A unit pixel array of an image sensor includes a semiconductor substrate having a plurality of unit pixels, an interlayer insulating layer disposed on a front side of the semiconductor substrate, a plurality of color filters disposed on a back side of the semiconductor substrate, a plurality of light path converters, each of the light path converters being disposed adjacent to at least one color filter and having a pair of slanted side edges extending from opposing ends of a horizontal bottom edge, and a plurality of micro lenses disposed on the color filters.

    Abstract translation: 图像传感器的单位像素阵列包括具有多个单位像素的半导体衬底,设置在半导体衬底的前侧的层间绝缘层,设置在半导体衬底背面的多个滤色器,多个 每个光路转换器设置成与至少一个滤色器相邻,并且具有从水平底部边缘的相对端延伸的一对倾斜侧边缘和设置在滤色器上的多个微透镜。

    SEMICONDUCTOR DEVICE
    90.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20120049278A1

    公开(公告)日:2012-03-01

    申请号:US13290535

    申请日:2011-11-07

    Abstract: The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over substrate to contact each other; a second conductive-type anti-diffusion region configured in an interface where the first conductive-type first well contacts the second conductive-type second well over the substrate; and a gate electrode configured to simultaneously cross the first conductive-type first well, the second conductive-type anti-diffusion region, and the second conductive-type second well over the substrate.

    Abstract translation: 半导体器件包括:第一导电型第一阱和第二导电类型的第二阱,被配置在衬底上以彼此接触; 第二导电型防扩散区,其配置在所述第一导电型第一阱与所述第二导电型第二阱相接触的界面处; 以及栅电极,其被配置为在所述衬底上同时与所述第一导电型第一阱,所述第二导电型反扩散区和所述第二导电型第二阱交叉。

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