Abstract:
Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a carrying unit between a second chamber and a loadlock chamber. The carrying unit includes an arm, a blade for supporting the substrate, and a rotation driver for rotating the arm. The carrying unit disposed between the second chamber and the loadlock chamber receives the substrate transferred in the loadlock chamber to transfer the substrate onto a substrate supporter in the second chamber.
Abstract:
The present invention relates to a substrate treating apparatus, and more particularly, to an apparatus treating a substrate using plasma. In an embodiment, a baffle is formed with holes distributing a process gas excited to a plasma state, and has a surface which is treated with a surface treating material comprising a silicon compound.
Abstract:
Provided is a baffle. The baffle has holes for distributing a process gas excited in a plasma state. A surface of the baffle is treated by using a surface treating material containing an aromatic compound.