Gas leak detection apparatus and methods
    81.
    发明授权
    Gas leak detection apparatus and methods 失效
    气体泄漏检测装置及方法

    公开(公告)号:US4766763A

    公开(公告)日:1988-08-30

    申请号:US46167

    申请日:1987-05-05

    申请人: Anthony D. Kurtz

    发明人: Anthony D. Kurtz

    IPC分类号: G01L19/04 G01M3/26

    CPC分类号: G01M3/26 G01L9/065

    摘要: There is disclosed a gas leak detector employing pressure transducers. In one embodiment the pressure in a vessel is monitored by means of a pressure transducer. The output of the pressure transducer is coupled to an operational amplifier whereby the amplifier has a gain which is proportional to 1/T absolute. In this manner, since the gain is inversely proportional to temperature, the amplifier will produce an output which is independent of temperature but which is capable of providing a pressure indication when there is a gas leak in the container.

    摘要翻译: 公开了一种使用压力传感器的气体泄漏检测器。 在一个实施例中,通过压力传感器监测容器中的压力。 压力传感器的输出耦合到运算放大器,由此放大器具有与1 / T绝对成比例的增益。 以这种方式,由于增益与温度成反比,所以放大器将产生与温度无关的输出,但是当容器中存在气体泄漏时能够提供压力指示。

    Transducer housing employing crimped leads
    82.
    发明授权
    Transducer housing employing crimped leads 失效
    使用压接引线的传感器外壳

    公开(公告)号:US4513623A

    公开(公告)日:1985-04-30

    申请号:US530525

    申请日:1983-09-09

    IPC分类号: G01L9/00 G01L19/14 G01L9/06

    摘要: A transducer housing consists of a first and a second section. The first section contains an internal hollow into which a transistor header is mounted. The header, as mounted in the first section, is firmly secured within the section by means of a locking ring or other arrangement. Located in the internal hollow of the first section is a printed circuit board which has a plurality of apertures on the surface thereof each of which communicates with an extending tubular post on the opposite surface. Leads from the header are directed through the apertures in the printed circuit board and extend into the tubular posts. The second housing section is emplaced on the first section and contains a series of hollow metal tubular connectors or posts. These are inserted over the metal tubular posts of the header containing the leads and are crimped so that the posts of the transistor header as well as the leads are connected both electrically and mechanically to the tubular posts extending from the second housing section. Based on the above noted configuration, the housing sections serve to hold the transducer as mounted in the header in a firm and fixed position while enabling installation and interconnection of the transistor header in a rapid and simple manner based on the fact that the leads emanating from the header are crimped internally within the housing sections.

    摘要翻译: 传感器外壳由第一和第二部分组成。 第一部分包含安装晶体管集管的内部空心。 安装在第一部分中的头部通过锁定环或其他布置牢固地固定在该部分内。 位于第一部分的内部中空部分中的印刷电路板在其表面上具有多个孔,每个孔与相对表面上的延伸管状柱连通。 从集管引出的引导通过印刷电路板中的孔并延伸到管状柱中。 第二壳体部分放置在第一部分上并且包含一系列中空金属管状连接器或柱。 这些插入到包含引线的插头的金属管状柱上,并且被压接,使得晶体管集管的端子以及引线电连接和机械连接到从第二壳体部分延伸的管状柱体。 基于上述配置,壳体部分用于将固定在集管中的换能器固定在固定位置,同时能够以快速且简单的方式安装和互连晶体管集管,基于以下事实:从 插头内部压接在外壳部分内。

    Tubular transducer structures
    83.
    发明授权
    Tubular transducer structures 失效
    管状传感器结构

    公开(公告)号:US4483196A

    公开(公告)日:1984-11-20

    申请号:US472851

    申请日:1983-03-07

    IPC分类号: G01L9/00 G01L9/06

    CPC分类号: G01L9/0052 G01L9/0002

    摘要: A pressure transducer employs a tubular glass structure of a "D" shaped cross section, with the arcuate section of the "D" shaped configuration being substantially thicker than the base section. A sensor array is positioned on the underside of the base section while a pressure conducting fluid is directed through the tubular member to provide deflection of the base to cause the sensor array to provide an output indicative of pressure variations in the fluid medium. The sensor array as positioned on the underside of the base is both electrically and mechanically isolated from the pressure conducting medium.

    摘要翻译: 压力传感器采用“D”形横截面的管状玻璃结构,“D”形构造的弓形部分基本上比基部部分厚。 传感器阵列定位在基部的下侧,同时压力传导流体被引导通过管状构件以提供基部的偏转,以使传感器阵列提供指示流体介质中的压力变化的输出。 位于基座下侧的传感器阵列与导电介质电气和机械隔离。

    Method of fabricating transducer structure employing vertically walled
diaphragms with quasi rectangular active areas
    84.
    发明授权
    Method of fabricating transducer structure employing vertically walled diaphragms with quasi rectangular active areas 失效
    使用具有准矩形有源区域的垂直壁隔膜制造换能器结构的方法

    公开(公告)号:US4443293A

    公开(公告)日:1984-04-17

    申请号:US399422

    申请日:1982-07-19

    CPC分类号: G01L9/0042 G01L9/0054

    摘要: There is disclosed a rectangular diaphragm employing a quasi rectangular active area. The diaphragm as configured has an aspect ratio which is the length to width ratio of greater than 3:1. The active area of the diaphragm, which is the area which most readily deflects upon application of a force to the diaphragm, is formed by an anisotropic etching technique to provide steep vertical sidewalls. The diaphragm structure thus described exhibits as a response to an applied force or pressure, a maximum longitudinal stress and a minimum transverse stress and can accommodate piezoresistive elements located within the active area of the diaphragm.

    摘要翻译: 公开了采用准矩形有源区的矩形隔膜。 构造的隔膜具有长宽比大于3:1的纵横比。 通过各向异性蚀刻技术形成膜片的有效面积,其是在向膜片施加力时最容易偏转的区域,以提供陡峭的垂直侧壁。 如此描述的隔膜结构表现为对施加的力或压力,最大纵向应力和最小横向应力的响应,并且可以适应位于隔膜的有效区域内的压阻元件。

    Binary balancing apparatus for semiconductor transducer structures
    85.
    发明授权
    Binary balancing apparatus for semiconductor transducer structures 失效
    用于半导体传感器结构的二进制平衡装置

    公开(公告)号:US4333349A

    公开(公告)日:1982-06-08

    申请号:US194034

    申请日:1980-10-06

    摘要: There is disclosed a balancing network for a piezoresistive semiconductor bridge configuration. The balancing network comprises a plurality of series resistors arranged in series with the sensing elements in the bridge configuration. Each resistor differs from the previous one according to a power of two to form a binary ladder arrangement. The individual resistors are associated with terminals to allow the transducer manufacturer to selectively short one or more resistors to provide zero balance compensation. The resistors are located on the nonactive portion of the semiconductor substrate and are fabricated by the same techniques employed for fabrication of the semiconductor piezoresistive sensing elements to assure temperature tracking of the unit with the desired temperature operating range.

    摘要翻译: 公开了一种用于压阻半导体桥结构的平衡网络。 平衡网络包括与桥式结构中的感测元件串联布置的多个串联电阻器。 每个电阻器根据两者的功率而不同于前一个电阻器,以形成二进制梯形布置。 各个电阻器与端子相关联,以允许换能器制造商选择性地短路一个或多个电阻器以提供零平衡补偿。 电阻器位于半导体衬底的非活性部分上,并且通过用于制造半导体压阻式感测元件的相同技术制造,以确保具有所需温度操作范围的单元的温度跟踪。

    Semiconductor transducers employing flexure frames
    86.
    发明授权
    Semiconductor transducers employing flexure frames 失效
    采用挠性框架的半导体传感器

    公开(公告)号:US4236137A

    公开(公告)日:1980-11-25

    申请号:US21960

    申请日:1979-03-19

    IPC分类号: G01L9/00 G01L1/22

    CPC分类号: G01L9/0054 G01L9/0042

    摘要: A pressure transducer employs a semiconductor diaphragm with a top surface having located thereon a central boss area of a trapezoidal cross section surrounded or "framed" by a continuous groove of a predetermined width. Piezoresistive sensors are formed on the bottom surface of said diaphragm with a first sensor adjacent the outer edge of said groove and another sensor parallel to said first sensor and adjacent the inner edge of said groove, said groove operative as a stress concentrating area to enable said sensors to provide a relatively large linear output upon application of a force to said diaphragm.

    摘要翻译: 压力传感器采用半导体膜片,其上表面具有由预定宽度的连续凹槽包围或“框起”的梯形横截面的中心凸台区域。 压电传感器形成在所述隔膜的底表面上,第一传感器邻近所述槽的外边缘,另一个传感器平行于所述第一传感器并与所述槽的内边缘相邻,所述凹槽用作应力集中区域,以使所述 传感器,以在向所述隔膜施加力时提供相对较大的线性输出。

    Integral transducer assemblies employing built-in pressure limiting
    87.
    发明授权
    Integral transducer assemblies employing built-in pressure limiting 失效
    采用内置压力限制的积分换能器组件

    公开(公告)号:US4063209A

    公开(公告)日:1977-12-13

    申请号:US573624

    申请日:1975-05-01

    摘要: A transducer of an H-shaped cross section employs a depression relatively equal to the line width of a diffused piezoresistor located in said depression. The depression is sealed by means of a glass member which acts as a "stop" for the transducer for all forces in excess of a rated force which causes a maximum diaphragm deflection relatively equal to the depth of said depression as selected in accordance with said resistor line width and the overall diaphragm diameter.

    摘要翻译: H形横截面的换能器采用相对于位于所​​述凹陷中的扩散压电电感器的线宽度的凹陷。 凹陷被玻璃构件密封,该玻璃构件作为超过额定力的所有力的换能器的“停止”,这导致相对于根据所述电阻器选择的所述凹陷的深度的最大隔膜偏转 线宽和整个膜片直径。

    Transducers employing gap-bridging shim members
    88.
    发明授权
    Transducers employing gap-bridging shim members 失效
    使用间隙桥接垫片的传感器

    公开(公告)号:US3995247A

    公开(公告)日:1976-11-30

    申请号:US624605

    申请日:1975-10-22

    申请人: Anthony D. Kurtz

    发明人: Anthony D. Kurtz

    IPC分类号: G01P15/12 H01L41/10

    CPC分类号: G01P15/123

    摘要: A transducer or accelerometer employs at least one slot or gap located in a seismic mass of a block-like configuration. The relative displacement of the opposing faces of the block, due to the slot, is monitored by means of a shim or similar metallic member, which spans the slot. Secured to the shim is a piezoresistive strain gage whose size and dimensions become relatively independent of the dimension of the slot, therefore enabling accurate and reliable strain detection without attendant temperature problems.

    摘要翻译: 换能器或加速度计采用位于块状构造的地震块中的至少一个槽或间隙。 由于槽而导致的块的相对面的相对位移通过跨越槽的垫片或相似的金属构件来监测。 安装在垫片上的是压阻应变计,其尺寸和尺寸变得相对独立于槽的尺寸,因此能够进行准确可靠的应变检测,而无需伴随着温度问题。

    High temperature transducer using SOI, silicon carbide or gallium nitride electronics

    公开(公告)号:US09915578B2

    公开(公告)日:2018-03-13

    申请号:US14791777

    申请日:2015-07-06

    IPC分类号: G01L9/00 G01L9/06 H01L29/84

    CPC分类号: G01L9/065 H01L29/84

    摘要: There is disclosed a high temperature pressure sensing system which includes a SOI, silicon carbide, or gallium nitride Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI, silicon carbide, or gallium nitride materials. The output of the analog to digital converter is applied to microprocessor, which microprocessor processes the data or output of the bridge to produce a digital output indicative of bridge value. The microprocessor also receives an output from another analog to digital converter indicative of the temperature of the bridge as monitored by a span resistor coupled to the bridge. The microprocessor has a separate memory coupled thereto which is also fabricated from SOI, silicon carbide, or gallium nitride materials and which memory stores various data indicative of the microprocessor also enabling the microprocessor test and system test to be performed.