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1.发明授权Method of fabricating transducer structure employing vertically walled diaphragms with quasi rectangular active areas 失效使用具有准矩形有源区域的垂直壁隔膜制造换能器结构的方法
公开(公告)号：US4443293A
公开(公告)日：1984-04-17
申请号：US399422
申请日：1982-07-19
申请人： Joseph R. Mallon , Anthony D. Kurtz
发明人： Joseph R. Mallon , Anthony D. Kurtz
IPC分类号： G01L9/00 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： G01L9/0042 , G01L9/0054
摘要： There is disclosed a rectangular diaphragm employing a quasi rectangular active area. The diaphragm as configured has an aspect ratio which is the length to width ratio of greater than 3:1. The active area of the diaphragm, which is the area which most readily deflects upon application of a force to the diaphragm, is formed by an anisotropic etching technique to provide steep vertical sidewalls. The diaphragm structure thus described exhibits as a response to an applied force or pressure, a maximum longitudinal stress and a minimum transverse stress and can accommodate piezoresistive elements located within the active area of the diaphragm.
摘要翻译： 公开了采用准矩形有源区的矩形隔膜。 构造的隔膜具有长宽比大于3:1的纵横比。 通过各向异性蚀刻技术形成膜片的有效面积，其是在向膜片施加力时最容易偏转的区域，以提供陡峭的垂直侧壁。 如此描述的隔膜结构表现为对施加的力或压力，最大纵向应力和最小横向应力的响应，并且可以适应位于隔膜的有效区域内的压阻元件。
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公开(公告)号：US4333349A
公开(公告)日：1982-06-08
申请号：US194034
申请日：1980-10-06
申请人： Joseph R. Mallon , Anthony D. Kurtz
发明人： Joseph R. Mallon , Anthony D. Kurtz
CPC分类号： G01L9/0054 , G01L1/2281 , G01L9/06
摘要： There is disclosed a balancing network for a piezoresistive semiconductor bridge configuration. The balancing network comprises a plurality of series resistors arranged in series with the sensing elements in the bridge configuration. Each resistor differs from the previous one according to a power of two to form a binary ladder arrangement. The individual resistors are associated with terminals to allow the transducer manufacturer to selectively short one or more resistors to provide zero balance compensation. The resistors are located on the nonactive portion of the semiconductor substrate and are fabricated by the same techniques employed for fabrication of the semiconductor piezoresistive sensing elements to assure temperature tracking of the unit with the desired temperature operating range.
摘要翻译： 公开了一种用于压阻半导体桥结构的平衡网络。 平衡网络包括与桥式结构中的感测元件串联布置的多个串联电阻器。 每个电阻器根据两者的功率而不同于前一个电阻器，以形成二进制梯形布置。 各个电阻器与端子相关联，以允许换能器制造商选择性地短路一个或多个电阻器以提供零平衡补偿。 电阻器位于半导体衬底的非活性部分上，并且通过用于制造半导体压阻式感测元件的相同技术制造，以确保具有所需温度操作范围的单元的温度跟踪。
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公开(公告)号：US4236137A
公开(公告)日：1980-11-25
申请号：US21960
申请日：1979-03-19
CPC分类号： G01L9/0054 , G01L9/0042
摘要： A pressure transducer employs a semiconductor diaphragm with a top surface having located thereon a central boss area of a trapezoidal cross section surrounded or "framed" by a continuous groove of a predetermined width. Piezoresistive sensors are formed on the bottom surface of said diaphragm with a first sensor adjacent the outer edge of said groove and another sensor parallel to said first sensor and adjacent the inner edge of said groove, said groove operative as a stress concentrating area to enable said sensors to provide a relatively large linear output upon application of a force to said diaphragm.
摘要翻译： 压力传感器采用半导体膜片，其上表面具有由预定宽度的连续凹槽包围或“框起”的梯形横截面的中心凸台区域。 压电传感器形成在所述隔膜的底表面上，第一传感器邻近所述槽的外边缘，另一个传感器平行于所述第一传感器并与所述槽的内边缘相邻，所述凹槽用作应力集中区域，以使所述 传感器，以在向所述隔膜施加力时提供相对较大的线性输出。
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公开(公告)号：US4063209A
公开(公告)日：1977-12-13
申请号：US573624
申请日：1975-05-01
申请人： Anthony D. Kurtz , Joseph R. Mallon
发明人： Anthony D. Kurtz , Joseph R. Mallon
CPC分类号： G01L19/147 , G01L9/0042 , G01L9/0054 , H01C10/10 , H01C17/00
摘要： A transducer of an H-shaped cross section employs a depression relatively equal to the line width of a diffused piezoresistor located in said depression. The depression is sealed by means of a glass member which acts as a "stop" for the transducer for all forces in excess of a rated force which causes a maximum diaphragm deflection relatively equal to the depth of said depression as selected in accordance with said resistor line width and the overall diaphragm diameter.
摘要翻译： H形横截面的换能器采用相对于位于所述凹陷中的扩散压电电感器的线宽度的凹陷。 凹陷被玻璃构件密封，该玻璃构件作为超过额定力的所有力的换能器的“停止”，这导致相对于根据所述电阻器选择的所述凹陷的深度的最大隔膜偏转 线宽和整个膜片直径。
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公开(公告)号：US4739298A
公开(公告)日：1988-04-19
申请号：US706889
申请日：1985-02-28
CPC分类号： G01L9/0055 , Y10T29/49103
摘要： A high temperature transducer consists of a first section having a base layer of monocrystalline silicon which layer is coated with an oxide. A thin layer of a high temperature glass is sputtered on the oxide layer of the base layer. A second section is formed by diffusing a wafer of N type silicon to form a p+ layer. The first and second sections are bonded together by an anodic bond where the p+ layer is secured to the glass layer to form a composite structure. The N type material is then removed and piezoresistive deivces are formed in the p+ layer. This structure provides a high temperature transducer which exhibits stable operating parameters over a wide operating range.
摘要翻译： 高温换能器由具有单层硅基底层的第一部分组成，该层被氧化物涂覆。 将高温玻璃的薄层溅射在基底层的氧化物层上。 通过扩散N型硅晶片形成p +层来形成第二部分。 第一和第二部分通过阳极结合在一起，其中p +层被固定到玻璃层以形成复合结构。 然后去除N型材料并在p +层中形成压阻电流。 该结构提供了一个在宽工作范围内表现出稳定运行参数的高温换能器。
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公开(公告)号：US4412203A
公开(公告)日：1983-10-25
申请号：US301108
申请日：1981-09-10
申请人： Anthony D. Kurtz , Joseph R. Mallon
发明人： Anthony D. Kurtz , Joseph R. Mallon
CPC分类号： G01L19/0084 , G01L19/143
摘要： A housing comprises a first top cylindrical section having an internal hollow which is manifested by three concentric sections, each of a larger diameter to give the sidewall of the housing a step-like cross section. A transducer assembly is positioned within the hollow of the top section and bonded to the inner wall. An annular ring is positioned in the hollow within the second section and accommodates small diameter wires directed from said transducer assembly through the aperture and bonded to metallized land areas on the undersurface of the annular member. The metallized areas also contain a separate conductive post which is directed from the land areas. A second bottom housing accommodates tubular conductive members which are aligned with the post member. When the second housing is emplaced within the first housing the posts are positioned within the tubular conductor members where they are welded to the tubular members to form a permanent assembly. The housing provided is extremely rugged and is adapted for operation in deleterious environments.
摘要翻译： 壳体包括具有内部空心的第一顶部圆柱形部分，其由三个同心部分表现，每个具有较大的直径，以使壳体的侧壁呈阶梯状横截面。 换能器组件定位在顶部的中空部内并且结合到内壁。 环形环位于第二部分内的中空部分中，并容纳从所述换能器组件通过孔引导的小直径线，并且接合到环形构件的下表面上的金属化区域。 金属化区域还包含从陆地区域引导的单独的导电柱。 第二底部壳体容纳与柱构件对准的管状导电构件。 当第二壳体放置在第一壳体内时，柱被定位在管状导体构件内，在它们中焊接到管状构件以形成永久性组件。 所提供的外壳非常坚固，适用于有害环境中的操作。
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7.发明授权Semiconductor pressure transducer or other product employing layers of single crystal silicon 失效半导体压力传感器或采用单晶硅层的其他产品
公开(公告)号：US4406992A
公开(公告)日：1983-09-27
申请号：US255461
申请日：1981-04-20
CPC分类号： G01L1/2293 , G01L9/0055
摘要： A monocrystalline silicon substrate has formed on a surface a grating pattern manifested by a series of parallel grooves, a layer of dielectric is thermally grown on said surface to replicate said pattern on an opposite surface of said dielectric and a layer of silicon deposited on said opposite surface of said dielectric is single crystal silicon determined by said grating. The structure formed enables the deposited single crystal layer to be selectively treated to provide at least one piezoresistive sensing element to thereby provide a transducer having both the force collector or substrate and the sensing elements of single crystal silicon and dielectrically isolated by means of said dielectric layer.
摘要翻译： 单晶硅衬底在表面上形成由一系列平行凹槽表现的光栅图案，电介质层在所述表面上热生长以在所述电介质的相对表面上复制所述图案，并且沉积在所述相对面上的硅层 所述电介质的表面是由所述光栅确定的单晶硅。 所形成的结构使得能够选择性地处理沉积的单晶层以提供至少一个压阻感测元件，从而提供具有集电器或基板以及单晶硅的感测元件的换能器，并通过所述介电层介电隔离 。
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公开(公告)号：US4222277A
公开(公告)日：1980-09-16
申请号：US65886
申请日：1979-08-13
申请人： Anthony D. Kurtz , Joseph R. Mallon
发明人： Anthony D. Kurtz , Joseph R. Mallon
CPC分类号： G01L9/0054 , G01L15/00
摘要： There is disclosed an absolute pressure transducer which is adaptable for use in various deleterious mediums. A single wafer contains a gage sensor configuration on one portion and an absolute sensor configuration on another adjacent portion. An active diaphragm area is defined for each sensor configuration by forming a depression beneath the sensor locations. A base member is bonded or secured to the wafer at the side containing the depressions. An aperture is directed through the base member to communicate with the depression associated with the gage sensor configuration and is employed as an external pressure port. The top surface of the wafer which contains the sensors is exposed to a relatively clean source of pressure to thereby enable the absolute sensor section to monitor this pressure, while the gage sensor section responds to both pressures.
摘要翻译： 公开了一种适用于各种有害介质的绝对压力传感器。 单个晶片在一个部分上包含量规传感器配置，并且在另一个相邻部分上包含绝对传感器配置。 通过在传感器位置下方形成凹陷来为每个传感器配置定义活动隔膜区域。 在包含凹陷部分的一侧将基底部件粘合或固定在晶片上。 孔径被引导通过基部构件以与与量规传感器构造相关联的凹陷连通并且被用作外部压力端口。 包含传感器的晶片的顶表面暴露于相当干净的压力源，从而使得绝对传感器部分能够监测该压力，而量规传感器部分响应于两个压力。
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9.发明授权Methods of fabricating transducers employing flat bondable surfaces with buried contact areas 失效使用具有埋入接触区域的平坦可结合表面的传感器的制造方法
公开(公告)号：US4208782A
公开(公告)日：1980-06-24
申请号：US950589
申请日：1978-10-12
申请人： Anthony D. Kurtz , Joseph R. Mallon
发明人： Anthony D. Kurtz , Joseph R. Mallon
CPC分类号： B81C1/00333 , G01L9/0042 , G01L9/0054 , H01L29/84 , G01B2210/64 , Y10T29/42 , Y10T29/49103
摘要： A semiconductor pressure transducer includes a base member fabricated from n-type silicon. The base member has a central depression defining an active area and located on a bottom, surface; diffused in the top surface, is at least one contact area which is directed from the active region towards the periphery of said base member. A piezoresistive sensor is located on said top surface and in contact with said contact area within said active region. A layer of epitaxial material surrounds the active region and has an aperture on the surface which is in communication with the contact area outside said active region. The epitaxial layer is polished at a top surface and a housing is coupled to the region by means of a suitable bond. Alternate methods of fabricating the transducer are shown employing both polycrystalline and monocrystalline epitaxial layers.
摘要翻译： 半导体压力传感器包括由n型硅制成的基底构件。 基座部件具有限定活动区域并位于底部表面上的中心凹部; 在顶表面中扩散的至少一个接触区域从有源区域朝向所述基底构件的周边引导。 压阻传感器位于所述顶表面上并与所述有源区域内的所述接触区域接触。 一层外延材料围绕有源区域，并且在表面上具有与所述有源区域外部的接触区域连通的孔。 外延层在顶表面被抛光，壳体通过合适的键连接到该区域。 示出了制造换能器的替代方法，其采用多晶和单晶外延层。
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10.发明授权Method of manufacturing integral transducer assemblies employing built-in pressure limiting 失效使用内置压力限制的整体式换能器组件的制造方法
公开(公告)号：US4040172A
公开(公告)日：1977-08-09
申请号：US710570
申请日：1976-08-02
申请人： Anthony D. Kurtz , Joseph R. Mallon
发明人： Anthony D. Kurtz , Joseph R. Mallon
CPC分类号： G01L9/0042 , G01L19/147 , G01L9/0054 , H01C10/10 , H01C17/00 , Y10T29/49098 , Y10T29/49099 , Y10T29/49103
摘要： A transducer of an "H" shaped cross section employs a depression relatively equal to the line width of a diffused piezoresistor located in said depression. The depression is sealed by means of a glass member which acts as a "stop" for the transducer for all forces in excess of a rated force which causes a maximum diaphragm deflection relatively equal to the depth of said depression as selected in accordance with said resistor line width and the overall diaphragm diameter.
摘要翻译： “H”形横截面的换能器采用相对于位于所述凹陷部中的扩散压电电感器的线宽度的凹陷。 凹陷被玻璃构件密封，该玻璃构件作为超过额定力的所有力的换能器的“停止”，这导致相对于根据所述电阻器选择的所述凹陷的深度的最大隔膜偏转 线宽和整个膜片直径。
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