公开(公告)号：US08003524B2

公开(公告)日：2011-08-23

申请号：US12177309

申请日：2008-07-22

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。

公开(公告)号：US07786578B2

公开(公告)日：2010-08-31

申请号：US12105037

申请日：2008-04-17

申请人： Christophe Detavenier ,  Simon Gaudet ,  Christian Lavoie ,  Conal E. Murray

发明人： Christophe Detavenier ,  Simon Gaudet ,  Christian Lavoie ,  Conal E. Murray

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/28518 ,  H01L21/2855

摘要： The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.

摘要翻译： 本发明提供了一种用于生产薄镍（Ni）一硅化物或NiSi膜（具有约30nm以下的厚度）的方法，作为在退火过程中形成非晶Ni合金硅化物层的CMOS器件中的接触，其消除 （即完全旁路）形成富金属硅化物层。 通过消除富金属硅化物层的形成，与由富金属硅化物相形成的NiSi膜相比，形成的所得NiSi膜具有改善的表面粗糙度。 本发明的方法还形成Ni单硅化物膜，而不会在现有技术的NiSi膜中存在的含Si衬底内遇到掺杂剂类型浓度的任何依赖性。

公开(公告)号：US07732870B2

公开(公告)日：2010-06-08

申请号：US12105034

申请日：2008-04-17

申请人： Christophe Detavenier ,  Simon Gaudet ,  Christian Lavoie ,  Conal E. Murray

发明人： Christophe Detavenier ,  Simon Gaudet ,  Christian Lavoie ,  Conal E. Murray

IPC分类号： H01L29/78

CPC分类号： H01L21/28518 ,  H01L21/2855

摘要： The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.

公开(公告)号：US20090155996A1

公开(公告)日：2009-06-18

申请号：US12177309

申请日：2008-07-22

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。

公开(公告)号：US07498254B2

公开(公告)日：2009-03-03

申请号：US11682581

申请日：2007-03-06

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。

公开(公告)号：US20070148826A1

公开(公告)日：2007-06-28

申请号：US11682581

申请日：2007-03-06

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry Spooner

IPC分类号： H01L21/00

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。

公开(公告)号：US07215006B2

公开(公告)日：2007-05-08

申请号：US11245540

申请日：2005-10-07

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L23/58

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。

公开(公告)号：US20070080429A1

公开(公告)日：2007-04-12

申请号：US11245540

申请日：2005-10-07

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry Spooner

IPC分类号： H01L23/58

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。

公开(公告)号：US20220005999A1

公开(公告)日：2022-01-06

申请号：US16918708

申请日：2020-07-01

申请人： Christian Lavoie ,  Benjamin Wymore ,  Markus Brink ,  Stephen L. Brown

发明人： Christian Lavoie ,  Benjamin Wymore ,  Markus Brink ,  Stephen L. Brown

IPC分类号： H01L39/12 ,  H01L39/24 ,  G06N10/00

摘要： Techniques facilitating formation of amorphous superconducting alloys for superconducting circuits are provided. A device can comprise one or more superconducting components that comprise an amorphous superconducting alloy comprising two or more elements. At least one element of the two or more elements is a superconducting element.

公开(公告)号：US10396229B2

公开(公告)日：2019-08-27

申请号：US13103583

申请日：2011-05-09

申请人： Joel P. De Souza ,  Harold J. Hovel ,  Daniel A. Inns ,  Jeehwan Kim ,  Christian Lavoie ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Zhen Zhang

发明人： Joel P. De Souza ,  Harold J. Hovel ,  Daniel A. Inns ,  Jeehwan Kim ,  Christian Lavoie ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Zhen Zhang

IPC分类号： H01L31/07 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/068

摘要： A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.