Microswitch and method of manufacturing the same
    84.
    发明授权
    Microswitch and method of manufacturing the same 失效
    微动开关及制造方法相同

    公开(公告)号:US06753488B2

    公开(公告)日:2004-06-22

    申请号:US10661660

    申请日:2003-09-15

    IPC分类号: H01H5700

    摘要: Fine holes each having a diameter of scores of nanometers are formed in each of diamond thin films at an interval equal to the diameter of the fine hole, and metal electrodes each having a low resistivity are buried in the fine holes, and the distance between metal electrodes and the diamond thin films through which flows an electric current is set at an order of scores of nanometers so as to markedly lower the on-resistance. As a result, provided is a microswitch having a low on-resistance and utilizing the high reliability inherent in diamond.

    摘要翻译: 在金刚石薄膜的每一个中,以与微孔直径相等的间隔形成各具有纳米级分的细孔,并且每个具有低电阻率的金属电极都埋在细孔中,金属间的距离 电极和通过其流过电流的金刚石薄膜设定为几十纳米的数量级,以便显着降低导通电阻。 结果,提供了具有低导通电阻并且利用金刚石固有的高可靠性的微动开关。