Cold cathode, cold cathode discharge lamp, and method for producing the same
    2.
    发明授权
    Cold cathode, cold cathode discharge lamp, and method for producing the same 有权
    冷阴极,冷阴极放电灯及其制造方法

    公开(公告)号:US07528535B2

    公开(公告)日:2009-05-05

    申请号:US11075883

    申请日:2005-03-10

    IPC分类号: H01J1/62

    CPC分类号: H01J1/32 H01J9/247 H01J65/046

    摘要: A cold cathode discharge lamp includes: a transparent hollow housing; a fluorescent film formed on inner surfaces of the hollow housing; a pair of cold cathodes that are located in the hollow housing; and a discharge gas that contains hydrogen gas sealed within the hollow housing. Each of the cold cathodes includes: a supporting body that has conductivity; an insulating diamond film formed on the supporting body; and an insulating layer that insulates the supporting body from the insulating diamond film.

    摘要翻译: 冷阴极放电灯包括:透明中空壳体; 形成在中空壳体的内表面上的荧光膜; 位于中空壳体中的一对冷阴极; 以及包含密封在中空壳体内的氢气的放电气体。 每个冷阴极包括:具有导电性的支撑体; 形成在所述支撑体上的绝缘金刚石膜; 以及将支撑体与绝缘金刚石膜绝缘的绝缘层。

    Electron emission device
    4.
    发明申请
    Electron emission device 审中-公开
    电子发射装置

    公开(公告)号:US20070029935A1

    公开(公告)日:2007-02-08

    申请号:US11495731

    申请日:2006-07-31

    IPC分类号: H01J17/02

    CPC分类号: H01J21/04 H01J3/021

    摘要: The electron emission device includes a first electrode; a semiconductor barrier that has a first face disposed to face the first electrode and a second face which is opposite face of the first face, and is formed with a wide bandgap semiconductor; an insulating material that forms a space sealed between the first electrode and the semiconductor barrier; an inert gas that is encapsulated in the space; a second electrode that is disposed to face a second face of the semiconductor barrier interposing vacuum therebetween; a first voltage applying unit that applies a voltage between the first electrode and the semiconductor barrier; and a second voltage applying unit that applies a voltage between the semiconductor barrier and the second electrode.

    摘要翻译: 电子发射装置包括第一电极; 具有面对第一电极的第一面和与第一面相对的第二面的半导体势垒,形成有宽带隙半导体; 形成密封在第一电极和半导体势垒之间的空间的绝缘材料; 封闭在空间中的惰性气体; 第二电极,被设置为面对介于其间的真空的半导体势垒的第二面; 第一电压施加单元,其在所述第一电极和所述半导体势垒之间施加电压; 以及在半导体阻挡层和第二电极之间施加电压的第二施加电压单元。

    Microswitch and method of manufacturing the same
    8.
    发明授权
    Microswitch and method of manufacturing the same 失效
    微动开关及制造方法相同

    公开(公告)号:US06753488B2

    公开(公告)日:2004-06-22

    申请号:US10661660

    申请日:2003-09-15

    IPC分类号: H01H5700

    摘要: Fine holes each having a diameter of scores of nanometers are formed in each of diamond thin films at an interval equal to the diameter of the fine hole, and metal electrodes each having a low resistivity are buried in the fine holes, and the distance between metal electrodes and the diamond thin films through which flows an electric current is set at an order of scores of nanometers so as to markedly lower the on-resistance. As a result, provided is a microswitch having a low on-resistance and utilizing the high reliability inherent in diamond.

    摘要翻译: 在金刚石薄膜的每一个中,以与微孔直径相等的间隔形成各具有纳米级分的细孔,并且每个具有低电阻率的金属电极都埋在细孔中,金属间的距离 电极和通过其流过电流的金刚石薄膜设定为几十纳米的数量级,以便显着降低导通电阻。 结果,提供了具有低导通电阻并且利用金刚石固有的高可靠性的微动开关。