METAMATERIAL EDGE COUPLERS IN THE BACK-END-OF-LINE STACK OF A PHOTONICS CHIP

    公开(公告)号:US20220252785A1

    公开(公告)日:2022-08-11

    申请号:US17173639

    申请日:2021-02-11

    IPC分类号: G02B6/122 F21V8/00 G02B6/14

    摘要: Structures for an edge coupler and methods of forming a structure for an edge coupler. The structure includes a waveguide core over a dielectric layer, and a back-end-of-line stack over the waveguide core and the dielectric layer. The back-end-of-line stack includes an interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature. The first feature, the second feature, and the third feature are positioned on the interlayer dielectric layer adjacent to the side edge, and the third feature has an overlapping relationship with a tapered section of the waveguide core.

    Optical power splitters with a multiple-level arrangement

    公开(公告)号:US11378749B2

    公开(公告)日:2022-07-05

    申请号:US17095865

    申请日:2020-11-12

    发明人: Yusheng Bian

    IPC分类号: G02B6/28 G02B6/12 G02B6/122

    摘要: Structures for an optical power splitter and methods of forming a structure for an optical power splitter. A first waveguide core includes a portion positioned over a multimode interference region, a second waveguide core includes a portion positioned over the multimode interference region, and a third waveguide core includes a portion positioned over the multimode interference region. The first waveguide core provides an input port to the optical power splitter. The second waveguide core provides a first output port from the optical power splitter, and the third waveguide core provides a second output port from the optical power splitter.

    OPTICAL POWER MODULATORS BASED ON TOTAL INTERNAL REFLECTION

    公开(公告)号:US20220146863A1

    公开(公告)日:2022-05-12

    申请号:US17092793

    申请日:2020-11-09

    IPC分类号: G02F1/01

    摘要: Structures for an optical power modulator and methods of fabricating a structure for an optical power modulator. A waveguide core includes a longitudinal axis, a first section, and a second section spaced from the first section along the longitudinal axis. An active layer includes a portion positioned along the longitudinal axis between the first section and the second section of the waveguide core. The active layer contains a material configured to have a first state with a first refractive index in response to an applied stimulus and a second state with a second refractive index different from the first refractive index.

    PHOTODETECTORS INCLUDING A COUPLING REGION WITH MULTIPLE TAPERS

    公开(公告)号:US20220115546A1

    公开(公告)日:2022-04-14

    申请号:US17065839

    申请日:2020-10-08

    摘要: Structures for a photodetector and methods of fabricating a structure for a photodetector. A photodetector includes a photodetector pad coupled to a waveguide core and a light-absorbing layer coupled to the photodetector pad. The light-absorbing layer has a body, a first taper that projects laterally from the body toward the waveguide core, and a second taper that projects laterally from the body toward the waveguide core. The photodetector pad includes a tapered section that is laterally positioned between the first taper and the second taper of the light-absorbing layer.

    Tunable grating couplers containing a material with a variable refractive index

    公开(公告)号:US11287719B2

    公开(公告)日:2022-03-29

    申请号:US16922233

    申请日:2020-07-07

    发明人: Yusheng Bian

    IPC分类号: G02B6/26 G02F1/225 G02B6/34

    摘要: Structures including a grating coupler and methods of forming a structure that includes a grating coupler. The grating coupler includes segments that are positioned with a spaced relationship on a slab layer. The segments contain an active material configured to have a first state with a first refractive index and a second state with a second refractive index in response to an applied stimulus. The first and second states may be produced by applying different sets of bias voltages to the segments as the applied stimulus.

    Optical couplers with segmented waveguides

    公开(公告)号:US11269142B2

    公开(公告)日:2022-03-08

    申请号:US16837149

    申请日:2020-04-01

    发明人: Yusheng Bian Bo Peng

    摘要: Structures for an optical coupler and methods of fabricating a structure for an optical coupler. A coupling section has a plurality of segments arranged with a pitch, a first waveguide core has a section extending longitudinally over the first plurality of segments of the coupling section, and a second waveguide core has a section extending longitudinally over the coupling section. The section of the second waveguide core laterally spaced from the section of the first waveguide core by a given distance.

    Optical power splitters including a non-linear waveguide taper

    公开(公告)号:US11256030B1

    公开(公告)日:2022-02-22

    申请号:US17063103

    申请日:2020-10-05

    IPC分类号: G02B6/122 G02B6/12

    摘要: Structures for an optical power splitter and methods of forming a structure for an optical power splitter. A first waveguide core provides an input port, and second and third waveguide cores provide respective output ports. A non-linear waveguide taper is coupled to the first waveguide core at a first interface and is coupled to the second and third waveguide cores at a second interface. The non-linear waveguide taper includes a first curved section having a first width dimension that increases with increasing longitudinal distance from the first interface. The non-linear waveguide taper includes a second curved section having a second width dimension that increases with increasing longitudinal distance from the second interface. The first and second curved sections join at a longitudinal location at which the first and second width dimensions are each equal to a maximum width of the non-linear waveguide taper.

    FIN-BASED PHOTODETECTOR STRUCTURE
    90.
    发明申请

    公开(公告)号:US20220037545A1

    公开(公告)日:2022-02-03

    申请号:US17504614

    申请日:2021-10-19

    摘要: A photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor material of the detector structure.