公开(公告)号：US20120285818A1

公开(公告)日：2012-11-15

申请号：US13560648

申请日：2012-07-27

申请人： Tomohiro OKUMURA ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

发明人： Tomohiro OKUMURA ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

IPC分类号： C23C14/34

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J37/32458 ,  H01J37/32623 ,  H01J37/32633

摘要： In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.

摘要翻译： 在根据本发明的等离子体掺杂装置中，在从气体供给装置引入预定气体的同时，通过排气口将涡轮分子泵作为排气装置抽真空室，以保持真空内部 通过压力调节阀到达预定压力。 13.56MHz的高频功率由高频电源提供给设置在与样品电极相对的电介质窗口附近的线圈，以在真空室中产生电感耦合等离子体。 提供了用于向样品电极提供高频电力的高频电源。 通过驱动闸门并覆盖通过门来增强处理的均匀性。

公开(公告)号：US08129202B2

公开(公告)日：2012-03-06

申请号：US12648142

申请日：2009-12-28

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

IPC分类号： H01L21/00

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

摘要翻译： 旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。 将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。 真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8， 与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

公开(公告)号：US07863168B2

公开(公告)日：2011-01-04

申请号：US11531637

申请日：2006-09-13

申请人： Tomohiro Okumura ,  Ichiro Nakayama ,  Bunji Mizuno ,  Yuichiro Sasaki

发明人： Tomohiro Okumura ,  Ichiro Nakayama ,  Bunji Mizuno ,  Yuichiro Sasaki

IPC分类号： H01L21/26 ,  H01L21/265

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412

摘要： In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode. Furthermore, a forward power Pf and a reflected power Pr of the high frequency power supplied to the substrate electrode are sampled at a high speed, and when a value of which the power difference Pf-Pr is integrated with respect to time reaches a predetermined value, the supply of the high frequency power is suspended.

摘要翻译： 为了实现能够进行稳定的低密度掺杂的等离子体掺杂方法，在从气体供给装置将预定气体引入真空室的同时用泵进行排气，真空室的压力保持在 预定的压力和高频功率从高频电源提供给线圈。 在真空室中产生等离子体之后，真空室的压力降低，并且对放置在基板电极上的基板进行低密度等离子体掺杂。 此外，真空室的压力逐渐降低，并且高频功率逐渐增加，从而对放置在基板电极上的基板进行低密度等离子体掺杂。 此外，提供给基板电极的高频功率的正向功率Pf和反射功率Pr被高速采样，并且当功率差Pf-Pr相对于时间积分的值达到预定值时 ，高频电源的供应被暂停。

公开(公告)号：US07858537B2

公开(公告)日：2010-12-28

申请号：US11517456

申请日：2006-09-08

申请人： Tomohiro Okumura ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Bunji Mizuno ,  Yuichiro Sasaki

发明人： Tomohiro Okumura ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Bunji Mizuno ,  Yuichiro Sasaki

IPC分类号： H01L21/324 ,  H01L21/477

CPC分类号： H01J37/3244 ,  H01J37/32412 ,  H01L21/2236

摘要： With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface.

摘要翻译： 在真空室的内部抽真空，并且在真空室中供气进入中止状态下，在真空室内密封氦气和乙硼烷气体的混合气体的状态下，在真空容器中产生等离子体，同时 向样品电极提供高频电力。 通过提供给样品电极的高频功率，将硼引入到衬底表面附近。

公开(公告)号：US07682954B2

公开(公告)日：2010-03-23

申请号：US10599205

申请日：2005-03-17

申请人： Yuichiro Sasaki ,  Ichiro Nakayama ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Ichiro Nakayama ,  Bunji Mizuno

IPC分类号： H01L21/425

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01L21/26513

摘要： An impurity region having a box-shaped impurity profile is formed.An impurity introducing method includes a step of introducing a desired impurity into a surface of a solid base body, and a step of radiating plasma to a surface of the solid base body after the impurity introducing step thus forming an impurity profile having an approximately box-shape.

摘要翻译： 形成具有盒状杂质分布的杂质区域。 杂质引入方法包括将期望的杂质引入固体基体的表面的步骤，以及在杂质引入步骤之后将等离子体辐射到固体基体表面的步骤，从而形成具有大致盒形的杂质分布， 形状。

公开(公告)号：US07575987B2

公开(公告)日：2009-08-18

申请号：US11585938

申请日：2006-10-25

申请人： Tomohiro Okumura ,  Ichiro Nakayama ,  Bunji Mizuno

发明人： Tomohiro Okumura ,  Ichiro Nakayama ,  Bunji Mizuno

IPC分类号： H01L21/26

CPC分类号： H01J37/32412 ,  C23C8/36 ,  C23C14/48 ,  H01J37/32467 ,  H01L21/2236 ,  H05H1/46

摘要： A doping device is provided having a vacuum container defining a chamber therein. The container has a portion made of dielectric material and bears an impurity to be doped in a substrate provided in the chamber. Also provided is a plasma source for generating a plasma in the chamber by forming an electric field through the portion of the container, such that ion in the plasma impinges against the portion of the container, feeding the impurity out of the portion of the container into the chamber.

摘要翻译： 提供一种具有在其中限定室的真空容器的掺杂装置。 容器具有由电介质材料制成的部分，并且在设置在腔室中的衬底中掺杂杂质。 还提供了一种用于通过在容器的一部分形成电场来产生等离子体的等离子体源，使得等离子体中的离子撞击容器的部分，将杂质从容器的一部分供给到 房间。

公开(公告)号：US20090181526A1

公开(公告)日：2009-07-16

申请号：US11887381

申请日：2006-03-30

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

IPC分类号： H01L21/22 ,  C23C16/00

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/3342

摘要： An object of the invention is to provide a plasma doping method and a plasma doping apparatus in which uniformity of concentration of impurities introduced into a sample surface are excellent.The plasma doping apparatus of the invention introduces a predetermined mass flow of gas from a gas supply device (2) into a vacuum chamber (1) while discharging the gas through an exhaust port (11) by a turbo-molecular pump (3), which is an exhaust device in order to maintain the vacuum chamber (1) under a predetermined pressure by a pressure adjusting valve (4). A high-frequency power source (5) supplies high-frequency power of 13.56 MHz to a coil (8) disposed in the vicinity of a dielectric window (7) opposite a sample electrode (6) in order to generate an inductively coupled plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying high-frequency power to the sample electrode (6) is provided. A sum of an area of an opening of a gas flow-off port (15) opposed to a center portion of the sample electrode (6) is configured to be smaller than that of an area of an opening of the gas flow-off port (15) opposed to a peripheral portion of the sample electrode (6) in order to improve the uniformity.

摘要翻译： 本发明的目的是提供一种等离子体掺杂方法和等离子体掺杂装置，其中引入样品表面的杂质的浓度均匀。 本发明的等离子体掺杂装置通过涡轮分子泵（3）将气体从气体供给装置（2）引入真空室（1），同时通过排气口排出气体， 其是为了通过压力调节阀（4）将真空室（1）保持在预定压力下的排气装置。 高频电源（5）向布置在与样品电极（6）相对的电介质窗口（7）附近的线圈（8）提供13.56MHz的高频功率，以便产生电感耦合等离子体 真空室（1）。 提供了一种用于向样品电极（6）提供高频电力的高频电源（10）。 与样品电极（6）的中心部分相对的气体流出口（15）的开口面积的总和被构造成小于气体流出口的开口面积的面积 （15）与样品电极（6）的周边部分相对，以提高均匀性。

公开(公告)号：US20090176355A1

公开(公告)日：2009-07-09

申请号：US11887323

申请日：2006-03-29

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

IPC分类号： H01L21/425 ,  C23C16/513

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J37/32458 ,  H01J37/32623 ,  H01J37/32633

摘要： An object of the invention is to provide a plasma doping method excellent in the uniformity of concentration of impurities introduced into the surface of a sample and a plasma processing device capable of uniformly performing plasma processing of a sample.In a plasma doping device according to the invention, a vacuum chamber (1) is evacuated with a turbo-molecular pump (3) as an exhaust device via a exhaust port 11 while a predetermined gas is being introduced from a gas supply device (2) in order to maintain the inside of the vacuum chamber (1) to a predetermined pressure with a pressure regulating valve (4). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source (5) to a coil (8) provided in the vicinity of a dielectric window (7) opposed to a sample electrode (6) to generate inductive-coupling plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying a high-frequency power to the sample electrode (6) is provided. Uniformity of processing is enhanced by driving a gate shutter (18) and covering a through gate (16).

摘要翻译： 本发明的目的是提供一种等离子体掺杂方法，该等离子体掺杂方法在引入样品表面的杂质的浓度均匀性和等离子体处理装置中均匀地进行等离子体处理。 在根据本发明的等离子体掺杂装置中，在从气体供给装置（2）引入预定气体的同时，通过排气口11，用作为排气装置的涡轮分子泵（3）将真空室（1）抽真空 ），以便通过压力调节阀（4）将真空室（1）的内部保持在预定压力。 高频电源（5）将13.56MHz的高频功率提供给设置在与样品电极（6）相对的电介质窗口（7）附近的线圈（8），以产生电感耦合 真空室（1）中的等离子体。 提供了用于向样品电极（6）提供高频电力的高频电源（10）。 通过驱动闸门（18）并覆盖通过门（16）来增强处理的均匀性。

公开(公告)号：US07456085B2

公开(公告)日：2008-11-25

申请号：US10597716

申请日：2005-02-04

申请人： Yuichiro Sasaki ,  Tomohiro Okumura ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Katsumi Okashita

发明人： Yuichiro Sasaki ,  Tomohiro Okumura ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Katsumi Okashita

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： H01L21/2236

摘要： To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus.At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.

摘要翻译： 为了提供可以重复进行等离子体放电以实现非晶态和等离子体掺杂的方法，在步骤简单且易于投入的情况下，不会破坏装置的方法。 在用于等离子体等离子体掺杂的等离子体照射中使用的等离子体切换时，停止放电，并且复位高频电源和外围电路的匹配点的初始状态，以适应 对于每个步骤中使用的等离子体，或者在切换时，通过增加压力和降低偏置电压来减小施加到高频电源等的负载。

公开(公告)号：US20070037367A1

公开(公告)日：2007-02-15

申请号：US11585938

申请日：2006-10-25

申请人： Tomohiro Okumura ,  Ichiro Nakayama ,  Bunji Mizuno

发明人： Tomohiro Okumura ,  Ichiro Nakayama ,  Bunji Mizuno

IPC分类号： H05H1/24 ,  H01L21/04

CPC分类号： H01J37/32412 ,  C23C8/36 ,  C23C14/48 ,  H01J37/32467 ,  H01L21/2236 ,  H05H1/46

摘要： A doping device is provided having a vacuum container defining a chamber therein. The container has a portion made of dielectric material and bears an impurity to be doped in a substrate provided in the chamber. Also provided is a plasma source for generating a plasma in the chamber by forming an electric field through the portion of the container, such that ion in the plasma impinges against the portion of the container, feeding the impurity out of the portion of the container into the chamber.

摘要翻译： 提供一种具有在其中限定室的真空容器的掺杂装置。 容器具有由电介质材料制成的部分，并且在设置在腔室中的衬底中掺杂杂质。 还提供了一种用于通过在容器的一部分形成电场来产生等离子体的等离子体源，使得等离子体中的离子撞击容器的部分，将杂质从容器的一部分供给到 房间。