公开(公告)号：US20050188444A1

公开(公告)日：2005-08-25

申请号：US11036379

申请日：2005-01-18

申请人： Soo-hwan Jeong ,  Wan-jun Park ,  In-kyeong Yoo ,  Ju-hye Ko

发明人： Soo-hwan Jeong ,  Wan-jun Park ,  In-kyeong Yoo ,  Ju-hye Ko

IPC分类号： B82B3/00 ,  C01B31/02 ,  C23C26/00 ,  C23C28/00 ,  H01J1/304 ,  H01J9/02 ,  C23C16/00

CPC分类号： C30B29/602 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C23C26/00 ,  C30B25/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469

摘要： Provided are a method of horizontally growing carbon nanotubes and a carbon nanotube device. The method includes: depositing an aluminum layer on a substrate; forming an insulating layer over the substrate to cover the aluminum layer; patterning the insulating layer and the aluminum layer on the substrate to expose a side of the aluminum layer; forming a plurality of holes in the exposed side of the aluminum layer to a predetermined depth; depositing a catalyst metal layer on the bottoms of the holes; and horizontally growing the carbon nanotubes from the catalyst metal layer. The carbon nanotubes can be grown in directions rather that horizontally relative to the substrate when laid flat.

摘要翻译： 提供了水平生长碳纳米管和碳纳米管装置的方法。 该方法包括：在基底上沉积铝层; 在所述基板上形成绝缘层以覆盖所述铝层; 将绝缘层和铝层图案化在基板上以暴露铝层的一侧; 在铝层的暴露侧形成多个孔至预定深度; 在所述孔的底部沉积催化剂金属层; 并从催化剂金属层水平生长碳纳米管。 当平铺时，碳纳米管可以在相对于基底的水平方向上生长。

公开(公告)号：US20050169048A1

公开(公告)日：2005-08-04

申请号：US11097157

申请日：2005-04-04

申请人： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

发明人： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/22 ,  H01L29/788 ,  H01L29/792 ,  H01L43/08 ,  G11C11/00

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.

摘要翻译： 单晶体管型磁随机存取存储器件及其操作和制造方法，其中单晶体管型磁随机存取存储器件包括衬底，彼此间隔开的第一和第二掺杂区，栅极电介质层 在第一和第二掺杂区域之间的半导体衬底的一部分，栅极电介质层上的磁性隧道结，在与第二掺杂区域相同的第一方向延伸的磁性隧道结上的字线，位线连接到 垂直于第一方向的第二方向上的第一掺杂区域和覆盖栅极介电层，磁性隧道结和字线的绝缘层。 单晶体管型磁随机存取存储器件具有简单的电路结构，寿命长，易于制造。

公开(公告)号：US06815783B2

公开(公告)日：2004-11-09

申请号：US10252532

申请日：2002-09-24

申请人： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

发明人： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

IPC分类号： H01L2982

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.

公开(公告)号：US06740925B2

公开(公告)日：2004-05-25

申请号：US10041469

申请日：2002-01-10

申请人： In-kyeong Yoo ,  Byong-man Kim

发明人： In-kyeong Yoo ,  Byong-man Kim

IPC分类号： H01L2976

CPC分类号： B82Y10/00 ,  G11C2216/08 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/7881

摘要： A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.

摘要翻译： 提供了包括具有RAM和ROM功能的单个晶体管的存储器件及其操作和制造方法。 存储器件包括形成在衬底上的单个晶体管。 晶体管可以是具有带非易失性存储元件的栅极的存储晶体管，或者在晶体管和衬底之间提供非易失性存储元件。

公开(公告)号：US5898609A

公开(公告)日：1999-04-27

申请号：US86489

申请日：1998-05-29

申请人： In-kyeong Yoo

发明人： In-kyeong Yoo

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： A ferroelectric random access memory having a discharge circuit for stably discharging pyroelectric charges generated in a ferroelectric capacitor without affecting write and read operations is provided. In the ferroelectric random access memory having the discharge circuit according to the present invention, the pyroelectric charges between the ferroelectric capacitor and the FET of the memory cell, generated during the write and read operations are automatically discharged through a resistor since the resistor is included as a discharge path between the contact point of the ferroelectric capacitor and the FET of the memory unit cell and the grounding point. Accordingly, the function of turning on and off the discharge path for discharging the pyroelectric charges is not necessary and the polarization turbulence due to the pyroelectric charges is not generated.

摘要翻译： 提供一种具有用于稳定地放电在铁电电容器中产生的热电荷而不影响写入和读取操作的放电电路的铁电随机存取存储器。 在具有根据本发明的放电电路的铁电随机存取存储器中，在写和读操作期间产生的存储单元的铁电电容器和FET之间的热电荷通过电阻器自动放电，因为电阻器被包括为 在强电介质电容器的接触点与存储单元电池的FET之间的放电路径和接地点。 因此，不需要对排出热电荷的放电路径进行导通和关闭的功能，并且不产生由于热电荷引起的极化湍流。