公开(公告)号：US07364837B2

公开(公告)日：2008-04-29

申请号：US11835082

申请日：2007-08-07

申请人： Won Wook Lee ,  Geun Su Lee ,  Sam Young Kim

发明人： Won Wook Lee ,  Geun Su Lee ,  Sam Young Kim

IPC分类号： G03F7/00 ,  G03F7/38

CPC分类号： G03F7/38 ,  G03F7/168

摘要： Photoresist cleaning solutions are used to clean semiconductor substrates before or after an exposing step when photoresist patterns are formed. The cleaning solutions include H2O and a nonionic surfactant compound represented by Formula 1. By spraying the disclosed cleaning solutions on a surface of the semiconductor substrate before or after exposing step to form a photoresist pattern, the desired pattern only is obtained and unnecessary patterns generated in undesired regions by ghost images are avoided as excess acid generated by the photoacid generator is neutralized and removed and damage to unexposed portions of the photoresist polymer is avoided. wherein R1 and R2 are independently H, C1-C20 alkyl, C5-C25 alkyl aryl or C1-C10 ester; m is 1 or 2; n is an integer ranging from 10 to 300; and o is 0 or 1.

摘要翻译： 当形成光致抗蚀剂图案时，光刻胶清洁溶液用于在曝光步骤之前或之后清洁半导体衬底。 清洗溶液包括H 2 O 2和由式1表示的非离子表面活性剂化合物。通过在暴露步骤之前或之后将所公开的清洁溶液喷涂在半导体衬底的表面上以形成光致抗蚀剂图案，所需的 避免了图案，并且避免了由不想要的区域产生的重影图像产生的不必要的图案，因为光致酸发生器产生的过量酸被中和和去除，并且避免了光致抗蚀剂聚合物的未曝光部分的损坏。 其中R 1和R 2独立地为H，C 1 -C 20烷基，C 5 烷基芳基或C 1 -C 10烷基酯; C 1 -C 15烷基芳基或C 1 -C 10烷基酯; m为1或2; n为10〜300的整数。 o为0或1。

公开(公告)号：US20070154838A1

公开(公告)日：2007-07-05

申请号：US11421897

申请日：2006-06-02

申请人： Geun Su Lee

发明人： Geun Su Lee

IPC分类号： G03C1/00

CPC分类号： G03F7/0752 ,  G03F7/11

摘要： Disclosed herein is a cross-linking polymer that includes a silicon compound and a hydroxyl compound. Also disclosed herein is a composition that includes the cross-linking polymer and an organic solvent. The composition can be used as a part of hard mask film applied over an underlying layer during the manufacture of a semiconductor device. The hard mask film is useful in the formation of a uniform pattern on the device.

摘要翻译： 本文公开了包含硅化合物和羟基化合物的交联聚合物。 本文还公开了包含交联聚合物和有机溶剂的组合物。 该组合物可用作在制造半导体器件期间施加在下层上的硬掩模膜的一部分。 硬掩模膜在器件上形成均匀图案是有用的。

公开(公告)号：US07033732B2

公开(公告)日：2006-04-25

申请号：US10903076

申请日：2004-07-30

申请人： Geun Su Lee

发明人： Geun Su Lee

IPC分类号： G03C1/76 ,  C08G79/02

CPC分类号： C08F230/02 ,  C08F216/06 ,  G03F7/091

摘要： Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I which is introduced to the top portion of photoresist, its preparation method and an anti-reflective coating composition, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source. More particularly, the present invention provides an organic anti-reflective coating polymer capable of protecting a photoresist from amine to improve the stability of a post exposure delay and to minimize pattern distortion caused by a swing phenomenon during a patterning process, its preparation method and an anti-reflective coating composition comprising the same. [formula I] wherein each of m and n is an integer ranging from 5 to 5,000.

摘要翻译： 公开了一种有机抗反射涂层聚合物，其具有由下式I表示的结构，其被引入到光致抗蚀剂的顶部，其制备方法和抗反射涂层组合物，用于形成光致抗蚀剂超细图案的工艺 用于通过使用193nm ArF或157nm VUV光源进行光刻。 更具体地说，本发明提供了一种能够保护光致抗蚀剂不受胺的有机抗反射涂层聚合物，以提高后曝光延迟的稳定性，并且使图案化过程中由摆动现象引起的图案变形最小化，其制备方法和 抗反射涂料组合物。 [式I]其中m和n各自为5至5,000的整数。

公开(公告)号：US07011924B2

公开(公告)日：2006-03-14

申请号：US10865731

申请日：2004-06-10

申请人： Geun Su Lee

发明人： Geun Su Lee

IPC分类号： G03F7/004

CPC分类号： G03F7/0395 ,  G03F7/0046

摘要： Photoresist polymers and photoresist compositions containing the same are disclosed that comprise a chain linking compound including an alcohol group and a boron compound represented by Formula 1 as a moiety. As a result, the photoresist polymer and the photoresist composition containing the same have excellent transmissivity, etching resistance, thermal resistance and adhesive property, low light absorbance and high affinity to an developing solution at a wavelength of 13 nm as well as 248 nm and 157 nm, thereby reducing line edge roughness (LER). wherein R1, R2, R3, R4 and R5 are as defined in the specification.

摘要翻译： 公开了含有它们的光致抗蚀剂聚合物和光致抗蚀剂组合物，其包含链烷基化合物，其包括醇基和由式1表示的硼化合物作为部分。 结果，含有该光致抗蚀剂的光致抗蚀剂聚合物和含有该光致抗蚀剂的光致抗蚀剂组合物具有优异的透光率，耐蚀刻性，耐热性和粘合性，低的吸光度和对于在波长13nm以及248nm和157的显影溶液的高亲和力 nm，从而减少线边缘粗糙度（LER）。 其中R 1，R 2，R 3，R 4和R 5， 如说明书中所定义。

公开(公告)号：US08202443B2

公开(公告)日：2012-06-19

申请号：US12833389

申请日：2010-07-09

申请人： Geun Su Lee

发明人： Geun Su Lee

IPC分类号： B44C1/22

CPC分类号： C09K13/08 ,  H01L27/10852 ,  H01L28/91

摘要： An etching composition for preventing from leaning a capacitor contains hydrofluoric acid (HF), ammonium fluoride (NH4F), an alkyl ammonium fluoride (ReNH3F; where Re is a C1-C10 linear or branched alkyl radical), a surfactant, an alcohol compound, and water. The composition can effectively suppress the leaning phenomenon of capacitors during the formation of the capacitors, so that height of the storage node of the capacitor can be secured, capacitors with improved capacitance can be manufactured, and the process can be adapted to the production of both present and future devices.

摘要翻译： 用于防止倾斜电容器的蚀刻组合物包含氢氟酸（HF），氟化铵（NH4F），烷基氟化铵（ReNH3F;其中Re是C1-C10直链或支链烷基），表面活性剂，醇化合物， 和水。 该组合物可以有效地抑制在形成电容器期间电容器的倾斜现象，从而可以确保电容器的存储节点的高度，并且可以制造具有改善的电容的电容器，并且该工艺可以适应于两者的生产 现在和未来的设备。

公开(公告)号：US20080166842A1

公开(公告)日：2008-07-10

申请号：US11784284

申请日：2007-04-06

申请人： Geun Su Lee

发明人： Geun Su Lee

IPC分类号： H01L29/00 ,  C09K13/08

CPC分类号： C09K13/08 ,  H01L27/10852 ,  H01L28/91

摘要： An etching composition for preventing from leaning a capacitor contains hydrofluoric acid (HF), ammonium fluoride (NH4F), an alkyl ammonium fluoride (ReNH3F; where Re is a C1-C10 linear or branched alkyl radical), a surfactant, an alcohol compound, and water. The composition can effectively suppress the leaning phenomenon of capacitors during the formation of the capacitors, so that height of the storage node of the capacitor can be secured, capacitors with improved capacitance can be manufactured, and the process can be adapted to the production of both present and future devices.

摘要翻译： 用于防止倾斜电容器的蚀刻组合物包含氢氟酸（HF），氟化铵（NH 4 F F），烷基氟化铵（R 3 N 3 N 3） F;其中R e是C 1 -C 10直链或支链烷基），表面活性剂，醇化合物 ，和水。 该组合物可以有效地抑制在形成电容器期间电容器的倾斜现象，从而可以确保电容器的存储节点的高度，并且可以制造具有改善的电容的电容器，并且该工艺可以适应于两者的生产 现在和未来的设备。

公开(公告)号：US20080138747A1

公开(公告)日：2008-06-12

申请号：US11935184

申请日：2007-11-05

申请人： Geun Su Lee ,  Sam Young Kim ,  Keun Do Ban

发明人： Geun Su Lee ,  Sam Young Kim ,  Keun Do Ban

IPC分类号： G03F7/30

CPC分类号： G03F7/322 ,  C11D1/004 ,  C11D11/0047

摘要： Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include H2O as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.

摘要翻译： 本文公开了当形成光致抗蚀剂图案时在显影步骤的最后步骤中用于清洁半导体衬底的光致抗蚀剂清洁溶液。 本文还公开了使用该溶液形成光致抗蚀剂图案的方法。 本发明的清洗溶液包括作为主要组分的H 2 O 2，作为添加剂的表面活性剂和任选的醇化合物。 本发明的清洗液比常规清洗液使用的蒸馏水具有更低的表面张力，从而提高了图案的崩溃性和稳定光刻胶图形的形成。

公开(公告)号：US20080083920A1

公开(公告)日：2008-04-10

申请号：US11672686

申请日：2007-02-08

申请人： Geun Su Lee

发明人： Geun Su Lee

IPC分类号： H01L51/00 ,  C07D251/30

CPC分类号： C07D251/30 ,  H01L28/91

摘要： A method for manufacturing a capacitor of a semiconductor device by using a composition to prevent leaning of a capacitor. The method includes forming a barrier film and a capacitor oxide film over a semiconductor substrate including an interlayer insulation film with contact plugs for storage nodes; etching the capacitor oxide film and the barrier film until the contact plugs are exposed to form trenches for capacitors; forming lower electrodes for the storage nodes in the trenches; coating the composition over the lower electrodes and baking the composition to form a polymer layer connecting the upper portions of the lower electrodes; performing the wet-dip out process on the resulting structure to remove the capacitor oxide film; and performing an O2 dry etching process to remove the polymer layer.

摘要翻译： 一种通过使用防止电容器倾斜的组合物来制造半导体器件的电容器的方法。 该方法包括在包括具有用于存储节点的接触插塞的层间绝缘膜的半导体衬底上形成阻挡膜和电容器氧化膜; 蚀刻电容器氧化膜和阻挡膜，直到接触塞暴露以形成用于电容器的沟槽; 形成用于沟槽中的存储节点的下电极; 将组合物涂覆在下电极上并烘烤组合物以形成连接下电极的上部的聚合物层; 对所得结构进行浸湿处理以除去电容器氧化膜; 并进行O 2 O 2干蚀刻工艺以除去聚合物层。