公开(公告)号：US20120127615A1

公开(公告)日：2012-05-24

申请号：US12954334

申请日：2010-11-24

申请人： Liubo Hong ,  Honglin Zhu ,  Tsann Lin ,  Zheng Gao

发明人： Liubo Hong ,  Honglin Zhu ,  Tsann Lin ,  Zheng Gao

IPC分类号： G11B5/33 ,  G01R33/32

CPC分类号： G11B5/3912 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3932

摘要： The present invention generally relates to a TMR reader and a method for its manufacture. The TMR reader discussed herein adds a shield layer to the sensor structure. The shield layer is deposited over the capping layer so that the shield layer and the capping layer collectively protect the free magnetic layer within the sensor structure from damage during further processing. Additionally, the hard bias layer is shaped such that the entire hard bias layer underlies the hard bias capping layer so that a top lead layer is not present. By eliminating the top lead layer and including a shield layer within the sensor structure, the read gap is reduced while still protecting the free magnetic layer during later processing.

摘要翻译： 本发明一般涉及TMR读取器及其制造方法。 本文中讨论的TMR读取器将一个屏蔽层添加到传感器结构。 屏蔽层沉积在覆盖层上，使得屏蔽层和覆盖层共同保护传感器结构内的自由磁性层免受进一步处理期间的损坏。 此外，硬偏压层被成形为使得整个硬偏压层位于硬偏压覆盖层的下面，使得顶部引线层不存在。 通过消除顶部引线层并且在传感器结构内包括屏蔽层，读取间隙减小，同时在稍后处理期间仍然保护自由磁性层。

公开(公告)号：US08169753B2

公开(公告)日：2012-05-01

申请号：US12276003

申请日：2008-11-21

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3912 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

摘要： A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers is disclosed for reducing a read gap, in order to perform magnetic recording at higher linear densities. The ferromagnetic amorphous buffer and polycrystalline seed layers couples to a ferromagnetic lower shield, thus acting as part of the ferromagnetic lower shield and defining the upper surface of the ferromagnetic polycrystalline seed layer as the lower bound of the read gap. In addition, a CPP TMR or GMR read sensor with nonmagnetic and ferromagnetic cap layers is also disclosed for reducing the read gap, in order to perform magnetic recording at even higher linear densities. The ferromagnetic cap layer couples to a ferromagnetic upper shield, thus acting as part of the ferromagnetic upper shield and defining the lower surface of the ferromagnetic cap layer as the upper bound of the read gap.

摘要翻译： 公开了具有铁磁非晶缓冲层和多晶种子层的电流垂直平面（CPP）隧道磁阻（TMR）或巨磁电阻（GMR）读取传感器，用于减小读取间隙，以便以更高的线性密度执行磁记录 。 铁磁非晶缓冲层和多晶种子层耦合到铁磁下屏蔽，因此作为铁磁下屏蔽的一部分并且将铁磁多晶种子层的上表面限定为读间隙的下限。 此外，还公开了具有非磁性和铁磁性盖层的CPP TMR或GMR读取传感器，用于减小读取间隙，以便以更高的线性密度进行磁记录。 铁磁盖层耦合到铁磁上屏蔽，因此用作铁磁上屏蔽的一部分并且将铁磁盖层的下表面限定为读间隙的上限。

公开(公告)号：US20120069471A1

公开(公告)日：2012-03-22

申请号：US12884091

申请日：2010-09-16

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/10 ,  G11B5/187

CPC分类号： G11B5/3929 ,  G01R33/098 ,  G11B5/3912 ,  H01L43/08 ,  H01L43/10

摘要： A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with ferromagnetic buffer, shielding and seed layers is proposed for high-resolution magnetic recording. The ferromagnetic buffer layer is preferably formed of an amorphous Co—X (where X is Hf, Y, Zr, etc.) film. It provides the CPP read sensor with microstructural discontinuity from a ferromagnetic lower shield, thus facilitating the CPP read sensor to grow freely with preferred crystalline textures, and with ferromagnetic continuity to the ferromagnetic lower shield, thus acting as a portion of the ferromagnetic lower shield. The ferromagnetic shielding layer is preferably formed of a polycrystalline Ni—Fe film. It exhibits magnetic properties exactly identical to those of the ferromagnetic lower shield, thus acting identically as the ferromagnetic lower shield, and a uniform columnar grain morphology, thus initiating a uniform large grain morphology in the CPP read sensor.

摘要翻译： 提出了具有铁磁缓冲器，屏蔽和种子层的电流垂直平面（CPP）隧道磁阻（TMR）或巨磁电阻（GMR）读取传感器用于高分辨率磁记录。 铁磁缓冲层优选由无定形Co-X（其中X是Hf，Y，Zr等）膜形成。 它为CPP读取传感器提供了来自铁磁下屏蔽的微结构不连续性，从而便于CPP读取传感器随着优选的结构纹理而自由生长，并且与铁磁下屏蔽层具有铁磁连续性，从而充当铁磁下屏蔽的一部分。 铁磁屏蔽层优选由多晶Ni-Fe膜形成。 它具有与铁磁下屏蔽完全相同的磁性，因此与铁磁下屏蔽相同，并且具有均匀的柱状晶粒形态，从而在CPP读取传感器中引发均匀的大晶粒形态。

公开(公告)号：US08081405B2

公开(公告)日：2011-12-20

申请号：US12129120

申请日：2008-05-29

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/33

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12

摘要： A current-to-perpendicular-to-plane (CPP) read sensor with multiple reference layers and associated fabrication methods are disclosed. According to one embodiment, the multiple reference layers of a CPP read sensor include a first reference layer (e.g., Co—Fe) formed by a ferromagnetic polycrystalline film, a second reference layer (e.g., Co—Fe—Hf) formed by a ferromagnetic amorphous film, a third reference layer (e.g., Co—Fe—B) formed by a ferromagnetic amorphous film, and a fourth reference layer (e.g., Co—Fe) formed by a ferromagnetic polycrystalline film. A plasma treatment is applied to the fourth reference layer for surface smoothening, and no replenishment is needed as long as the fourth reference layer is not completely removed after the plasma treatment. The fourth reference layer protects the surface of the third reference layer from spin polarization deterioration caused by the plasma treatment, thereby maintaining a strong TMR or GMR effect.

摘要翻译： 公开了具有多个参考层和相关制造方法的电流对垂直平面（CPP）读取传感器。 根据一个实施例，CPP读取传感器的多个参考层包括由铁磁性多晶膜形成的第一参考层（例如，Co-Fe），由铁磁性多晶膜形成的第二参考层（例如Co-Fe-Hf） 非晶膜，由铁磁性非晶膜形成的第三参考层（例如，Co-Fe-B）和由铁磁性多晶膜形成的第四参考层（例如，Co-Fe）。 对第四参考层进行等离子体处理以进行表面平滑处理，只要第四参考层在等离子体处理后未完全去除，则不需要补充。 第四参考层保护第三参考层的表面免于由等离子体处理引起的自旋极化劣化，从而保持强的TMR或GMR效应。

公开(公告)号：US20100128400A1

公开(公告)日：2010-05-27

申请号：US12276003

申请日：2008-11-21

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3912 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

摘要： A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers is disclosed for reducing a read gap, in order to perform magnetic recording at higher linear densities. The ferromagnetic amorphous buffer and polycrystalline seed layers couples to a ferromagnetic lower shield, thus acting as part of the ferromagnetic lower shield and defining the upper surface of the ferromagnetic polycrystalline seed layer as the lower bound of the read gap. In addition, a CPP TMR or GMR read sensor with nonmagnetic and ferromagnetic cap layers is also disclosed for reducing the read gap, in order to perform magnetic recording at even higher linear densities. The ferromagnetic cap layer couples to a ferromagnetic upper shield, thus acting as part of the ferromagnetic upper shield and defining the lower surface of the ferromagnetic cap layer as the upper bound of the read gap.

摘要翻译： 公开了具有铁磁非晶缓冲层和多晶种子层的电流垂直平面（CPP）隧道磁阻（TMR）或巨磁电阻（GMR）读取传感器，用于减小读取间隙，以便以更高的线性密度执行磁记录 。 铁磁非晶缓冲层和多晶种子层耦合到铁磁下屏蔽，因此作为铁磁下屏蔽的一部分并且将铁磁多晶种子层的上表面限定为读间隙的下限。 此外，还公开了具有非磁性和铁磁性盖层的CPP TMR或GMR读取传感器，用于减小读取间隙，以便以更高的线性密度进行磁记录。 铁磁盖层耦合到铁磁上屏蔽，因此用作铁磁上屏蔽的一部分并且将铁磁盖层的下表面限定为读间隙的上限。

公开(公告)号：US20090296285A1

公开(公告)日：2009-12-03

申请号：US12130389

申请日：2008-05-30

申请人： Satoru Araki ,  Ying Hong ,  Edward Hin Pong Lee ,  Tsann Lin ,  David John Seagle

发明人： Satoru Araki ,  Ying Hong ,  Edward Hin Pong Lee ,  Tsann Lin ,  David John Seagle

IPC分类号： G11B5/33 ,  G01R33/18 ,  H01L21/00 ,  B44C1/22

CPC分类号： G01R33/18 ,  G01R33/0023 ,  G11B5/3929

摘要： A system in one approach includes a sensor stack formed of a plurality of thin film layers; a shunt formed of at least some of the same layers as the sensor stack, the shunt being spaced from the sensor stack; a first lead coupled to the sensor stack and the shunt; and a second lead coupled to the sensor stack and the shunt. A method in one embodiment includes forming a plurality of thin film layers; removing a portion of the thin film layers for defining at least a portion of a sensor stack and at least a portion of a shunt spaced front the sensor stack; forming a first lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt and a second lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt. Additional systems and methods are also presented.

摘要翻译： 一种方法的系统包括由多个薄膜层形成的传感器堆叠; 由与所述传感器堆叠的至少一些相同层形成的分流器，所述分流器与所述传感器堆叠间隔开; 耦合到传感器堆叠和分流器的第一引线; 以及耦合到传感器堆叠和分流器的第二引线。 一个实施例中的方法包括形成多个薄膜层; 去除用于限定传感器堆叠的至少一部分的薄膜层的一部分和与传感器堆叠间隔开的分流器的至少一部分; 形成耦合到传感器堆叠的至少一部分和分流器的至少一部分的第一引线和耦合到传感器堆叠的至少一部分和分流器的至少一部分的第二引线。 还介绍了其他系统和方法。

公开(公告)号：US07570462B2

公开(公告)日：2009-08-04

申请号：US12128188

申请日：2008-05-28

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996

摘要： A read sensor with a uniform longitudinal bias (LB) stack is proposed. The read sensor is a giant magnetoresistance (GMR) sensor used in a current-in-plane (CIP) or a current-perpendicular-to-plane (CPP) mode, or a tunneling magnetoresistance (TMR) sensor used in the CPP mode. The transverse pinning layer of the read sensor is made of an antiferromagnetic Pt—Mn, Ir—Mn or Ir—Mn—Cr film. In one embodiment of this invention, the uniform LB stack comprises a longitudinal pinning layer, preferable made of an antiferromagnetic Ir—Mn—Cr or Ir—Mn film, in direct contact with and exchange-coupled to sense layers of the read sensor. In another embodiment of the present invention, the uniform LB stack comprises the Ir—Mn—Cr or Ir—Mn longitudinal pinning layer exchange coupled to a ferromagnetic longitudinal pinned layer, and a nonmagnetic antiparallel-coupling spacer layer sandwiched between and the ferromagnetic longitudinal pinned layer and the sense layers.

摘要翻译： 提出了具有均匀纵向偏置（LB）堆叠的读取传感器。 读取传感器是在电流平面（CIP）或电流 - 垂直于平面（CPP）模式中使用的巨磁阻（GMR）传感器，或CPP模式中使用的隧道磁阻（TMR）传感器。 读取传感器的横向钉扎层由反铁磁性Pt-Mn，Ir-Mn或Ir-Mn-Cr膜制成。 在本发明的一个实施例中，均匀的LB堆叠包括纵向钉扎层，优选由反铁磁性Ir-Mn-Cr或Ir-Mn膜制成，与读取传感器的感测层直接接触并交换耦合。 在本发明的另一个实施例中，均匀LB叠层包括耦合到铁磁纵向被钉扎层的Ir-Mn-Cr或Ir-Mn纵向钉扎层交换，以及夹在其间的非磁性反向平行耦合间隔层和铁磁纵向钉扎层 层和感应层。

公开(公告)号：US20090168267A1

公开(公告)日：2009-07-02

申请号：US11964673

申请日：2007-12-26

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： A current-to-perpendicular-to-plane (CPP) read sensor with multiple reference layers and associated fabrication methods are disclosed. According to one embodiment of the invention, the multiple reference layers of a CPP tunneling magnetoresistance (TMR) read sensor includes a first reference layer formed by a ferromagnetic polycrystalline Co—Fe film, a second reference layer formed by a ferromagnetic substitute-type amorphous Co—Fe—X film where X is Hf, Zr or Y, and a third reference layer formed by a ferromagnetic interstitial-type amorphous Co—Fe—B film. The first reference layer facilitates the CPP TMR read sensor to exhibit high exchange and antiparallel-coupling fields. The second reference layer provides a thermally stable flat surface, thus facilitating the CPP TMR read sensor to exhibit a low ferromagnetic-coupling field. The multiple reference layers may induce spin-dependent scattering, thus facilitating the CPP TMR sensor to exhibit a high TMR coefficient.

摘要翻译： 公开了具有多个参考层和相关制造方法的电流对垂直平面（CPP）读取传感器。 根据本发明的一个实施例，CPP隧穿磁阻（TMR）读取传感器的多个参考层包括由铁磁性多晶Co-Fe膜形成的第一参考层，由铁磁性替代型非晶态Co -Fe-X膜，其中X是Hf，Zr或Y，以及由铁磁间隙型无定形Co-Fe-B膜形成的第三参考层。 第一个参考层有助于CPP TMR读取传感器展现出高交换和反平行耦合场。 第二参考层提供热稳定的平坦表面，因此便于CPP TMR读取传感器呈现低铁磁耦合场。 多个参考层可以诱导自旋依赖散射，从而便于CPP TMR传感器呈现高TMR系数。

公开(公告)号：US20080259507A1

公开(公告)日：2008-10-23

申请号：US11736521

申请日：2007-04-17

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/127 ,  G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  Y10T428/1121

摘要： A tunneling magnetoresistive (TMR) sensor with a free layer made of a Co—Fe—B alloy is disclosed. After annealing at a temperature of less than 300° C., the Co—Fe—B free layer exhibits a negative or zero saturation magnetostriction, λS, while the TMR sensor exhibits superior TMR properties. The Co—Fe—B free layer has an Fe content of not greater than 10 atomic percent, and a B content of not greater than 10 atomic percent. Alternatively, a free-layer structure is used in place of the Co—Fe—B free layer The free-layer structure includes a first free layer lying on a barrier layer and a second free layer lying on the first free layer. The first free layer is made of an alloy selected from Co—Fe, Co—B and Co—Fe—B alloys, while the second free layer is made of an alloy selected from Co—B and Co—Fe—B alloys. The first free layer has an Fe content of not greater than 10 atomic percent, and a B content of not greater than 10 atomic percent. The second free layer has an Fe content of not greater than 20 atomic percent, and a B content of not greater than 20 atomic percent. After annealing for 2 to 20 hours at a temperature ranging from 220° C. up to 300° C., the free-layer structure exhibits a negative saturation magnetostriction, λS, while the TMR sensor exhibits a very high TMR coefficient at a very low junction resistance-area product. By adjusting the compositions and thicknesses of the first and second Co—Fe—B free layers, it is possible to “tune” to any desired value of saturation magnetostriction, λS, in the range of −1×10−5

摘要翻译： 公开了一种具有由Co-Fe-B合金制成的自由层的隧道磁阻（TMR）传感器。 在小于300℃的温度下退火后，Co-Fe-B自由层表现出负或零饱和磁致伸缩，而TMR传感器表现出优异的TMR性能。 Co-Fe-B自由层的Fe含量不大于10原子％，B含量不大于10原子％。 或者，使用自由层结构代替Co-Fe-B自由层。自由层结构包括位于阻挡层上的第一自由层和位于第一自由层上的第二自由层。 第一自由层由选自Co-Fe，Co-B和Co-Fe-B合金的合金制成，而第二自由层由选自Co-B和Co-Fe-B合金的合金制成。 第一自由层的Fe含量不大于10原子％，B含量不大于10原子％。 第二自由层的Fe含量不大于20原子％，B含量不大于20原子％。 在220℃至300℃的温度范围内退火2至20小时后，自由层结构显示出负的饱和磁致伸缩，而TMR传感器呈现出 非常高的TMR系数在非常低的结电阻面积产品。 通过调节第一和第二Co-Fe-B自由层的组成和厚度，可以“调谐”到-1×10 -3的范围内的饱和磁致伸缩的任何期望值λS

公开(公告)号：US20080257714A1

公开(公告)日：2008-10-23

申请号：US11737705

申请日：2007-04-19

申请人： Tsann Lin ,  Daniele Mauri ,  Alexander M. Zeltser

发明人： Tsann Lin ,  Daniele Mauri ,  Alexander M. Zeltser

IPC分类号： C23C14/00

CPC分类号： C23C14/081 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/0042 ,  C23C14/025 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/18 ,  H01F41/307 ,  H01L43/12

摘要： A method for manufacturing a tunnel junction magnetoresistive sensor having improved magnetic performance and reliability. The method includes depositing a Mg—O barrier layer in a sputter deposition tool in a chamber having an oxygen concentration that changes. For example, the sputter deposition could be initiated with a first oxygen concentration in the chamber, and then, during the deposition of the barrier layer the oxygen concentration can be reduced.

摘要翻译： 一种具有改进的磁性能和可靠性的隧道结磁阻传感器的制造方法。 该方法包括在具有改变的氧浓度的室中的溅射沉积工具中沉积Mg-O阻挡层。 例如，可以在室中以第一氧浓度开始溅射沉积，然后在阻挡层的沉积期间可以减少氧浓度。