摘要:
A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region.
摘要:
There is provided a film forming apparatus which is capable of forming a film on both surfaces of a substrate by sputtering continuously with high efficiency by restraining a rise in temperature of the substrate to a predetermined value or higher.In a film forming chamber 2 the pressure of which is controlled, while a rotating drum 7 is rotated by the driving of a drive motor 8, a film is formed on the top surface of a substrate 12 on a substrate tray 13 held on a substrate holder 10 by cathodes 17a and 17b for outer surface to which a d.c. voltage or an a.c. voltage or a high-frequency voltage is applied, and also a film is formed on the back surface of the substrate 12 on the substrate tray 13 held on the substrate holder 10 by cathodes 14a and 14b for inner surface to which a d.c. voltage or an a.c. voltage or a high-frequency voltage is applied, by which a high-quality film is formed on both surfaces of the substrate 12 by sputtering continuously with high efficiency by restraining a rise in temperature of the substrate to a predetermined value or higher.
摘要:
A biomicromolecule-separating, monolithic silica column having a silica matrix and pores formed in the silica matrix, the silica matrix and pores have been modified at surfaces thereof with a polymer, which is obtainable by polymerization of a monomer composition including a phosphorylcholine-analogous-group-containing monomer represented by the following formula (1): R1, R2 and R3 are the same or different and each represent a hydrogen atom, C1-6 alkyl group or C1-6 hydroxyalkyl group, R4 represents a C1-6 alkylene group, R5 represents a hydrogen atom or methyl group, and n stands for an integer of from 1 to 4, such that the surface-modified pores are provided with a pore size comparable to a molecular size of biomicromolecules to be separated.
摘要翻译:具有二氧化硅基质和在二氧化硅基质中形成的孔,二氧化硅基质和孔的生物分子分离的整体硅石柱已经在其表面上用聚合物改性,聚合物可通过聚合包含磷酸胆碱类似物的单体组合物获得, 由下式(1)表示的含有基团的单体:R1,R2和R3相同或不同,各自表示氢原子,C1-6烷基或C1-6羟烷基,R4表示C1-6亚烷基 R 5表示氢原子或甲基,n表示1〜4的整数,使得表面改性孔的孔径与分离的生物分子的分子大小相当。
摘要:
To reduce power consumption by a thermal flowmeter while good flow-rate detection sensitivity is maintained, it is only necessary to reduce power consumption by a heat resistor under predetermined conditions. Specifically, provided that a width Wh of the heat resistor is between 100 micrometers and 400 micrometers inclusive (100≦Wh≦400), it is only necessary that a relationship among the length Lh of the heat resistor, a temperature increase ΔTh for the heat resistor, and a maximum permissible power Phmax to be supplied to the heat resistor be set so as to satisfy a formula 1.4≦ΔTh·Lh/Ph max≦2.8 in order to maintain good flow-rate detection sensitivity. Accordingly, the length of the heat resistor and the temperature increase in the heat resistor are set so that the maximum power consumption can be reduced within a range in which the formula is satisfied.
摘要:
A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region.
摘要:
Conventional thermal flow measurement devices lack consideration for automobiles in severe environments. A detection element of the thermal flow measurement device according to the present invention is structured by the provision of a planar substrate made of a material having good thermal conductivity, such as silicon or ceramic, with a thin-walled portion (diaphragm). On the surface of the thin-walled portion, the detection element comprises a heat element as a heater heated to a temperature being different to a predetermined extent from the temperature of the air flow to be measured, temperature-detecting resistors as temperature-detecting means on both sides of the heat element, wiring portions formed of electrical conductors that draw signal lines from the heat element and the temperature-detecting resistors and that have a melting point of 2000° C. or higher, and pads.
摘要:
In the thermal type flowmeter for measuring the flow rate by a measuring element with an exothermic resistor and a temperature measuring resistor being shaped in the side of the surface of a substrate, a facing wall facing the surface of the measuring element is arranged, cantilever plate parts protruding from the facing wall toward the measuring element side are arranged, a gap is provided between the tip of the cantilever plate parts and the measuring element, and the cantilever plate parts are extended from the upper stream to the down stream of the measuring element.
摘要:
A thermal type air flow meter that makes it possible to precisely and easily determine whether a sensor element is a non-defective or a defective by screening is provided. First and second diaphragm sections composed of an electrical insulating film are formed in a semiconductor substrate. A heating resistor and a resistor for intake air temperature sensor are disposed on them to obtain a sensor element for thermal type air flow meters. The length of the short sides W1 of the rectangular first diaphragm section is made substantially equal to the length of the short sides of the second diaphragm section rectangular as well. Thus, the pressures applied to each of the diaphragm sections are substantially identical with each other in pressurization during screening.
摘要:
A target is produced inexpensively by safely incorporating an additive which is inflammable in the atmosphere. A primary alloy in a molten state is formed by adding an additive into a principal material in a low-level oxygen atmosphere, and a secondary alloy is produced by increasing the volume of the primary alloy through adding the principal material to the molten primary alloy in the atmospheric atmosphere. Since the primary alloys in the molten or solid condition are stable, it does not ignite in the atmosphere. Since the volume of the primary alloy is smaller than that of the secondary alloy, a smaller size of a vacuum chamber 11 for the formation of the first atmosphere suffices.
摘要:
The coupling capacitance of the wiring portions of a thermal type flow rate measuring apparatus is reduced so as to prevent a drop in the response characteristics. A detection element of the thermal type flow rate measuring apparatus includes a planar substrate made of silicon, ceramic, or the like, in which a diaphragm is formed. On the surface of the diaphragm, there are disposed a heat-generating resistor as a heat-generating element that is heated to a predetermined temperature difference from the temperature of air flow to be measured, a heat-generating element temperature-detecting resistor for detecting the temperature of the heat-generating resistor, and temperature-detecting resistors disposed on both sides of the heat-generating resistor. The detection element also includes wiring portions which have connecting terminals electrically connected to the heat-generating resistor and a wiring pattern electrically connected with the surface of the planar substrate.