公开(公告)号：US08239672B2

公开(公告)日：2012-08-07

申请号：US12468057

申请日：2009-05-19

申请人： Chih-Chang Chen ,  Sung-Chien Tang

发明人： Chih-Chang Chen ,  Sung-Chien Tang

IPC分类号： H04L9/00

CPC分类号： H04W12/02 ,  H04W12/04 ,  H04W48/16 ,  H04W76/10 ,  H04W84/12

摘要： A method for a access point device having first network identity information to automatically establish a security link with a peer access point device in a wireless communication system includes searching and receiving a beacon corresponding to the peer access point device by radio frequency scan, obtaining second network identity information corresponding to the peer access point device from the beacon, determining a primary-secondary relationship for the access point device and the peer access point device according to the first and second network identity information, generating or receiving security data according to the primary-secondary relationship, and then establishing the security link with the peer access point device according to the security data.

摘要翻译： 一种具有第一网络身份信息的接入点设备的方法，用于在无线通信系统中自动建立与对等接入点设备的安全链路，包括通过射频扫描来搜索和接收与对等接入点设备相对应的信标，获得第二网络 根据所述第一和第二网络身份信息确定所述接入点设备和所述对等接入点设备的主要 - 次要关系，根据所述第一和第二网络身份信息生成或接收安全数据， 次级关系，然后根据安全数据与对等接入点设备建立安全链路。

公开(公告)号：US20070297915A1

公开(公告)日：2007-12-27

申请号：US11808873

申请日：2007-06-13

申请人： Shi-Lin Li ,  Fu-Lei Yu ,  Jian-Long Li ,  Chih-Chang Chen

发明人： Shi-Lin Li ,  Fu-Lei Yu ,  Jian-Long Li ,  Chih-Chang Chen

IPC分类号： F01D25/12

CPC分类号： F04D25/0613 ,  F04D27/001

摘要： A fan comprises a ventilation device and a vibration device. The ventilation device comprises a housing, an impeller disposed in the housing and rotating with respect to a rotating center, and a driving mechanism disposed in the housing and connected to the impeller to rotate the impeller. The vibration device is disposed on the impeller and comprises at least one fixed element, at least one movable element, and at least one track. The fixed element is fixed to the track, and the movable element is slidably disposed on the track. When the movable element slides on the track, a vibration notification is generated.

摘要翻译： 风扇包括通风装置和振动装置。 通风装置包括壳体，设置在壳体中并相对于旋转中心旋转的叶轮以及设置在壳体中并连接到叶轮以旋转叶轮的驱动机构。 所述振动装置设置在所述叶轮上并且包括至少一个固定元件，至少一个可移动元件和至少一个轨道。 固定元件固定在轨道上，可移动元件可滑动地设置在轨道上。 当可移动元件在轨道上滑动时，产生振动通知。

公开(公告)号：US07271450B2

公开(公告)日：2007-09-18

申请号：US11303530

申请日：2005-12-16

申请人： Tuo-Hung Ho ,  Ming-Fang Wang ,  Chi-Chun Chen ,  Chih-Wei Yang ,  Liang-Gi Yao ,  Chih-Chang Chen

发明人： Tuo-Hung Ho ,  Ming-Fang Wang ,  Chi-Chun Chen ,  Chih-Wei Yang ,  Liang-Gi Yao ,  Chih-Chang Chen

IPC分类号： H01L29/94

CPC分类号： H01L21/823462 ,  H01L21/31111 ,  H01L29/513 ,  H01L29/517

摘要： A method of fabricating a dual-gate on a substrate and an integrated circuit having a dual-gate structure are provided. A first high-K dielectric layer is formed in a first area defined for a first gate structure and in a second area defined for a second gate structure. A second high-K dielectric layer is formed in the first and second areas. The first high-K dielectric layer has a lower etch rate to an etchant relative to the second high-K dielectric layer. The second high-K dielectric layer is etched from the second area to said first high-K dielectric layer with the etchant, and a gate conductive layer is formed in the first and second areas over the second high-K dielectric layer and first high-K dielectric layer, respectively.

摘要翻译： 提供了一种在衬底上制造双栅极的方法和具有双栅极结构的集成电路。 第一高K电介质层形成在为第一栅极结构限定的第一区域和在为第二栅极结构限定的第二区域中。 在第一和第二区域中形成第二高K电介质层。 第一高K电介质层相对于第二高K电介质层具有比腐蚀剂更低的蚀刻速率。 使用蚀刻剂将第二高K电介质层从第二区域蚀刻到所述第一高K电介质层，并且在第二高K电介质层上的第一和第二区域中形成栅极导电层， K电介质层。

公开(公告)号：US20060091469A1

公开(公告)日：2006-05-04

申请号：US11303530

申请日：2005-12-16

申请人： Tuo-Hung Ho ,  Ming-Fang Wang ,  Chi-Chun Chen ,  Chih-Wei Yang ,  Liang-Gi Yao ,  Chih-Chang Chen

发明人： Tuo-Hung Ho ,  Ming-Fang Wang ,  Chi-Chun Chen ,  Chih-Wei Yang ,  Liang-Gi Yao ,  Chih-Chang Chen

IPC分类号： H01L29/94

CPC分类号： H01L21/823462 ,  H01L21/31111 ,  H01L29/513 ,  H01L29/517

摘要： A method of fabricating a dual-gate on a substrate and an integrated circuit having a dual-gate structure are provided. A first high-K dielectric layer is formed in a first area defined for a first gate structure and in a second area defined for a second gate structure. A second high-K dielectric layer is formed in the first and second areas. The first high-K dielectric layer has a lower etch rate to an etchant relative to the second high-K dielectric layer. The second high-K dielectric layer is etched from the second area to said first high-K dielectric layer with the etchant, and a gate conductive layer is formed in the first and second areas over the second high-K dielectric layer and first high-K dielectric layer, respectively.

摘要翻译： 提供了一种在衬底上制造双栅极的方法和具有双栅极结构的集成电路。 第一高K电介质层形成在为第一栅极结构限定的第一区域和在为第二栅极结构限定的第二区域中。 在第一和第二区域中形成第二高K电介质层。 第一高K电介质层相对于第二高K电介质层具有比腐蚀剂更低的蚀刻速率。 使用蚀刻剂将第二高K电介质层从第二区域蚀刻到所述第一高K电介质层，并且在第二高K电介质层上的第一和第二区域中形成栅极导电层， K电介质层。

公开(公告)号：US07030024B2

公开(公告)日：2006-04-18

申请号：US10226617

申请日：2002-08-23

申请人： Tuo-Hung Ho ,  Ming-Fang Wang ,  Chi-Chun Chen ,  Chih-Wei Yang ,  Liang-Gi Yao ,  Chih-Chang Chen

发明人： Tuo-Hung Ho ,  Ming-Fang Wang ,  Chi-Chun Chen ,  Chih-Wei Yang ,  Liang-Gi Yao ,  Chih-Chang Chen

IPC分类号： H01L21/302

CPC分类号： H01L21/823462 ,  H01L21/31111 ,  H01L29/513 ,  H01L29/517

摘要： A method of fabricating a dual-gate on a substrate and an integrated circuit having a dual-gate structure are provided. A first high-K dielectric layer is formed in a first area defined for a first gate structure and in a second area defined for a second gate structure. A second high-K dielectric layer is formed in the first and second areas. The first high-K dielectric layer has a lower etch rate to an etchant relative to the second high-K dielectric layer. The second high-K dielectric layer is etched from the second area to said first high-K dielectric layer with the etchant, and a gate conductive layer is formed in the first and second areas over the second high-K dielectric layer and first high-K dielectric layer, respectively.

公开(公告)号：US06765170B2

公开(公告)日：2004-07-20

申请号：US10322131

申请日：2002-12-17

申请人： Chih-Chang Chen ,  Chi-Mou Ni ,  Michael Gerard Poss ,  Alexander Michael Turley ,  Daniel C. Hutchinson

发明人： Chih-Chang Chen ,  Chi-Mou Ni ,  Michael Gerard Poss ,  Alexander Michael Turley ,  Daniel C. Hutchinson

IPC分类号： B23K1114

CPC分类号： B23K11/14

摘要： A method of single sided spot welding includes the steps of providing a metal tube having a convex surface portion and providing a metal sheet for welding to the metal tube. The method also includes the steps of contacting the metal sheet with the convex surface portion of the metal tube and contacting the metal sheet with a welding electrode. The method further includes the steps of supplying power to the welding electrode for melting metal and solidifying the molten metal to form a weld nugget between the metal sheet and the metal tube.

摘要翻译： 单面点焊的方法包括提供具有凸面部分的金属管和提供用于焊接到金属管的金属片的步骤。 该方法还包括使金属片与金属管的凸表面部分接触并使金属片与焊接电极接触的步骤。 该方法还包括以下步骤：向焊接电极提供电力以熔化金属并固化熔融金属，以在金属片和金属管之间形成焊接熔核。

公开(公告)号：US06498059B2

公开(公告)日：2002-12-24

申请号：US09815212

申请日：2001-03-22

申请人： Chih-Chang Chen ,  Jerry Ji-Ho Kung

发明人： Chih-Chang Chen ,  Jerry Ji-Ho Kung

IPC分类号： H01L2100

CPC分类号： H01L29/66742 ,  G02F1/1368 ,  G02F2001/136231 ,  H01L27/12 ,  H01L29/78618 ,  H01L29/78669 ,  H01L29/78687

摘要： A method for fabricating a thin film transistor (TFT) is provided. The method includes steps of a) providing an insulation substrate, b) forming a conductive layer on the insulation substrate, c) defining the conductive layer as a gate conducting structure by a first photolithography and etch process, d) forming a gate insulation layer, a channel layer, a junction layer, a source/drain layer and a data line layer in sequence, and etching the data line layer, the source/drain layer and the junction layer by a second photolithography and etch process to form a source/drain structure and a data line structure, and e) heat-treating the junction layer to reduce resistance between the source/drain structure and the channel layer.

摘要翻译： 提供一种制造薄膜晶体管（TFT）的方法。 该方法包括以下步骤：a）提供绝缘衬底，b）在绝缘衬底上形成导电层，c）通过第一光刻和蚀刻工艺将导电层限定为栅极导电结构，d）形成栅绝缘层， 沟道层，接合层，源极/漏极层和数据线层，并且通过第二光刻和蚀刻工艺蚀刻数据线层，源极/漏极层和结层，以形成源极/漏极 结构和数据线结构，以及e）热接合层以降低源/漏结构和沟道层之间的电阻。

公开(公告)号：US06365444B2

公开(公告)日：2002-04-02

申请号：US09812106

申请日：2001-03-19

申请人： Chih-Chang Chen ,  Jerry Ji-Ho Kung

发明人： Chih-Chang Chen ,  Jerry Ji-Ho Kung

IPC分类号： H01L2100

CPC分类号： H01L29/66765 ,  G02F1/136227 ,  G02F2202/104 ,  H01L27/12 ,  H01L29/78621

摘要： A process for forming a polycrystalline TFT LCD is provided, thereby greatly reducing the manufacturing cost and time. The process includes steps of performing a first masking procedure to define a gate conductive region, successively forming an insulation layer, an amorphous channel semiconductor layer, a catalytic layer and a doped semiconductor layer, performing a second masking procedure to remove portions of the semiconductor layer and the catalytic layer to define an electrode region, performing a thermal treatment to respectively convert the electrode region and the amorphous semiconductor channel layer into a source/drain region and a crystalline semiconductor channel layer by the catalytic layer, performing a third masking procedure to define data lines, performing a fourth masking procedure to form a contact hole, and performing a fifth masking procedure to define a transparent pixel electrode region, thereby forming the TFT.

公开(公告)号：US08541110B2

公开(公告)日：2013-09-24

申请号：US13009134

申请日：2011-01-19

申请人： Chih-Chang Chen ,  Michael J. Bland ,  Daniel C. Hutchinson

发明人： Chih-Chang Chen ,  Michael J. Bland ,  Daniel C. Hutchinson

IPC分类号： B32B15/01 ,  B32B3/30

CPC分类号： B23K11/00 ,  B23K11/0033 ,  B23K11/115 ,  B23K33/00 ,  B32B3/263 ,  C22C1/02 ,  Y10T428/12201 ,  Y10T428/12347 ,  Y10T428/12965

摘要： A resistance spot welding manufacture includes a first metal layer having a first thickness, a second metal layer having a faying surface defining an embossed region, wherein the second metal layer has a second thickness that is less than the first thickness so that a ratio of the first thickness to the second thickness is greater than about 2:1, a third metal layer sandwiched between the first metal layer and the embossed region, wherein the third metal layer has a third thickness that is greater than the second thickness, and a weld joint penetrating each of the first metal layer, the third metal layer, and the faying surface at the embossed region to thereby join each of the first metal layer and the second metal layer to the third metal layer. A method of forming a resistance spot welding manufacture is also disclosed.

摘要翻译： 电阻点焊制造包括具有第一厚度的第一金属层，具有限定压花区域的引线表面的第二金属层，其中第二金属层具有小于第一厚度的第二厚度， 第一厚度至第二厚度大于约2:1，夹在第一金属层和压花区域之间的第三金属层，其中第三金属层具有大于第二厚度的第三厚度，以及焊接接头 在压纹区域贯穿第一金属层，第三金属层和配合面的每个，从而将第一金属层和第二金属层中的每一个连接到第三金属层。 还公开了形成电阻点焊制造的方法。

公开(公告)号：US08479377B2

公开(公告)日：2013-07-09

申请号：US12550077

申请日：2009-08-28

申请人： Chih-Chang Chen ,  Michael J. Bland ,  Stephen R. Smith

发明人： Chih-Chang Chen ,  Michael J. Bland ,  Stephen R. Smith

IPC分类号： H02K5/00

CPC分类号： H02K3/12 ,  H02K15/0081 ,  Y10T29/49009 ,  Y10T29/49071 ,  Y10T29/53143

摘要： A method of joining the ends of wire windings for a motor stator or the like includes preparing a surface at each end (e.g., by removing any enamel coating), deforming the surfaces to produce knurls, striations, and the like, and then ultrasonically bonding the two surfaces to produce the bond between windings, thereby providing a joint with improved strength.

摘要翻译： 连接电动机定子等的线圈的端部的方法包括在每个端部准备表面（例如，通过去除任何搪瓷涂层），使表面变形以产生滚花，条纹等，然后超声波结合 两个表面产生绕组之间的接合，从而提供具有改善的强度的接头。