Interactive Viewer for Advertisements
    81.
    发明申请
    Interactive Viewer for Advertisements 审中-公开
    互动查看器广告

    公开(公告)号:US20080282290A1

    公开(公告)日:2008-11-13

    申请号:US11745758

    申请日:2007-05-08

    IPC分类号: H04N7/10

    摘要: A system, method, and computer-readable media are presented for displaying an interactive viewer associated with an advertisement within a user interface. In one aspect, the system includes an advertisement manager for providing advertisements in response to request from clients. The system further includes a rendering component for determining if an advertisement has an associated interactive viewer, determining features associated with the advertisement, and displaying the interactive viewer including the determined features. Additionally, the system includes an event tracking module for monitoring a user's interaction with the interactive viewer, and reporting feedback regarding the interaction to the advertisement manager.

    摘要翻译: 呈现系统,方法和计算机可读介质,用于显示与用户界面内的广告相关联的交互式查看器。 在一个方面,系统包括广告管理器,用于响应于来自客户端的请求来提供广告。 该系统还包括用于确定广告是否具有相关联的交互式查看器,确定与该广告相关联的特征以及显示包括确定的特征的交互式查看器的呈现组件。 此外,该系统包括用于监视用户与交互式查看器的交互的事件跟踪模块,以及向广告管理器报告与交互的反馈。

    Device having contact pad with a conductive layer and a conductive passivation layer
    85.
    发明授权
    Device having contact pad with a conductive layer and a conductive passivation layer 有权
    具有接触焊盘与导电层和导电钝化层的器件

    公开(公告)号:US07358185B2

    公开(公告)日:2008-04-15

    申请号:US11234000

    申请日:2005-09-23

    申请人: Tongbi Jiang Li Li

    发明人: Tongbi Jiang Li Li

    IPC分类号: H01L21/60

    摘要: A method and apparatus is disclosed for sequential processing of integrated circuits, particularly for conductively passivating a contact pad with a material which resists formation of resistive oxides. In particular, a tank is divided into three compartments, each holding a different solution: a lower compartment and two upper compartments divided by a barrier, which extends across and partway down the tank. The solutions have different densities and therefore separate into different layers. In the illustrated embodiment, integrated circuits with patterned contact pads are passed through one of the upper compartments, in which oxide is removed from the contact pads. Continuing downward into the lower compartment and laterally beneath the barrier, a protective layer is selectively formed on the insulating layer surrounding the contact pads. As the integrated circuits are moved upwardly into the second upper compartment, a conducting monomer selectively forms on the contact pads prior to any exposure to air. The integrated circuits can then be transferred to an ozone chamber where polymerization results in a conductive passivation layer on the contact pad.

    摘要翻译: 公开了用于集成电路的顺序处理的方法和装置,特别是用抵抗形成电阻氧化物的材料导电地钝化接触焊盘。 特别地,罐被分成三个隔室,每个隔间都有一个不同的解决方案:一个下隔室和两个隔离隔间的隔离隔板,两个隔间延伸横跨槽和一半的槽。 溶液具有不同的密度,因此分离成不同的层。 在所示实施例中,具有图案化接触焊盘的集成电路通过上隔室之一,其中氧化物从接触焊盘移除。 继续向下进入下隔室并在屏障下方横向放置,在围绕接触垫的绝缘层上选择性地形成保护层。 当集成电路向上移动到第二上隔室中时,在任何暴露于空气之前,在接触焊盘上选择性地形成导电单体。 然后可以将集成电路转移到臭氧室,其中聚合导致接触焊盘上的导电钝化层。

    Methods for reducing or preventing liquid-liquid phase separation in high concentration protein solutions
    88.
    发明申请
    Methods for reducing or preventing liquid-liquid phase separation in high concentration protein solutions 审中-公开
    降低或防止高浓度蛋白质溶液中液 - 液相分离的方法

    公开(公告)号:US20080070230A1

    公开(公告)日:2008-03-20

    申请号:US11811517

    申请日:2007-06-11

    IPC分类号: G01N33/536 C07K1/00 G01N33/00

    CPC分类号: C07K1/36

    摘要: Methods of formulating proteins at high concentrations in protein solutions, wherein the protein solutions lack or have reduced liquid-liquid phase separation are described. Such protein solutions are substantially clear and substantially homogenous. Additionally, methods of concentrating and purifying proteins using liquid-liquid phase separation are provided.

    摘要翻译: 在蛋白质溶液中配制高浓度蛋白质的方法,其中蛋白质溶液缺乏或液 - 液相分离减少。 这种蛋白质溶液基本上是清楚的并且基本上均匀。 另外,提供了使用液 - 液相分离来浓缩和纯化蛋白质的方法。

    Methods and apparatus for RF shielding in vertically-integrated semiconductor devices
    89.
    发明申请
    Methods and apparatus for RF shielding in vertically-integrated semiconductor devices 有权
    垂直集成半导体器件中射频屏蔽的方法和装置

    公开(公告)号:US20070281438A1

    公开(公告)日:2007-12-06

    申请号:US11444091

    申请日:2006-05-31

    IPC分类号: H01L21/30

    摘要: A patterned ground shield (PGS) (130) in a vertically-integrated structure includes a patterned conductor (e.g., a metallic layer) provided between a first substrate (110) having a first semiconductor device (1120 formed therein and a second substrate (120) having a second device (122) formed therein. A bonding layer (140) is used to bond the vertically-integrated die and/or wafers. The PGS may be formed on a surface (e.g., the backside) of the second (topmost) substrate, or may be formed over the first semiconductor device—for example, on a dielectric layer formed over the first semiconductor device. The PGS may consist of parallel stripes in various patterns, or may be spiral-shaped, lattice-shaped, or the like.

    摘要翻译: 在垂直一体化结构中的图案化接地屏蔽(PGS)(130)包括设置在具有第一半导体器件的第一衬底(1120)和第二衬底(120)之间的图案化导体(例如,金属层) ),其中形成有第二器件(122),接合层(140)用于将垂直集成的裸片和/或晶片接合,PGS可以形成在第二(顶部)的表面(例如,背面)上 或者可以形成在第一半导体器件上,例如在形成于第一半导体器件上的电介质层上,PGS可以由各种图案的平行条纹组成,或者可以是螺旋状,格子状或 类似。

    Methods for filling trenches in a semiconductor material
    90.
    发明申请
    Methods for filling trenches in a semiconductor material 有权
    在半导体材料中填充沟槽的方法

    公开(公告)号:US20070269958A1

    公开(公告)日:2007-11-22

    申请号:US11434982

    申请日:2006-05-16

    IPC分类号: H01L21/76

    CPC分类号: H01L21/76224

    摘要: Methods of filling cavities or trenches. More specifically, methods of filling a cavity or trench in a semiconductor layer are provided. The methods include depositing a first dielectric layer into the trench by employing a conformal deposition process. Next, the first dielectric layer is etched to create a recess in the trench within the first dielectric layer. The recesses are then filled with a second dielectric layer by employing a high density plasma deposition process. The techniques may be particularly useful in filling cavities and trenches having narrow widths and/or high aspect ratios.

    摘要翻译: 填充空腔或沟槽的方法。 更具体地,提供了填充半导体层中的空腔或沟槽的方法。 所述方法包括通过采用保形沉积工艺将第一介电层沉积到沟槽中。 接下来,蚀刻第一介电层以在第一介电层内的沟槽中产生凹陷。 然后通过采用高密度等离子体沉积工艺,用第二介电层填充凹陷。 该技术在填充具有窄宽度和/或高纵横比的空腔和沟槽中可能特别有用。