公开(公告)号：US20210372785A1

公开(公告)日：2021-12-02

申请号：US16890364

申请日：2020-06-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Zahra Hosseinimakarem ,  Jonathan D. Harms ,  Alyssa N. Scarbrough ,  Dmitry Vengertsev ,  Yi Hu

IPC: G01B11/30

Abstract: Embodiments of the disclosure are drawn to projecting light on a surface and analyzing the scattered light to obtain spatial information of the surface and generate a three dimensional model of the surface. The three dimensional model may then be analyzed to calculate one or more surface characteristics, such as roughness. The surface characteristics may then be analyzed to provide a result, such as a diagnosis or a product recommendation. In some examples, a mobile device is used to analyze the surface.

公开(公告)号：US20170331032A1

公开(公告)日：2017-11-16

申请号：US15588994

申请日：2017-05-08

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Witold Kula ,  Manzar Siddik ,  Suresh Ramarajan ,  Jonathan D. Harms

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/224 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

公开(公告)号：US20170018705A1

公开(公告)日：2017-01-19

申请号：US14797622

申请日：2015-07-13

Applicant: Micron Technology, Inc.

Inventor： Jonathan D. Harms ,  Wei Chen ,  Sunil S. Murthy

IPC: H01L43/10 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

Abstract: Some embodiments include a magnetic tunnel junction comprising magnetic reference material having an iridium-containing region between a multi-layer stack and a polarizer region. Some embodiments include a magnetic tunnel junction having a conductive first magnetic electrode which contains magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and which contains magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic reference material of the second electrode includes a first region containing a stack of cobalt alternating with one or more of platinum, palladium and nickel; includes an iridium-containing second region over the first region; and includes a cobalt-containing third region over the second region. The third region is directly against the non-magnetic insulator material.

Abstract translation: 一些实施例包括磁隧道结，其包括在多层堆叠和偏振器区域之间具有含铱区域的磁性参考材料。 一些实施例包括磁性隧道结，其具有包含磁记录材料的导电第一磁电极，与第一电极间隔开并且包含磁性参考材料的导电第二磁极和在第一和第二电极之间的非磁性绝缘体材料。 第二电极的磁性参考材料包括含有与铂，钯和镍中的一种或多种交替的钴的堆叠的第一区域; 包括在所述第一区域上的含铱的第二区域; 并且在第二区域上包括含钴的第三区域。 第三区域直接抵靠非磁性绝缘体材料。

公开(公告)号：US09537088B1

公开(公告)日：2017-01-03

申请号：US14797622

申请日：2015-07-13

Applicant: Micron Technology, Inc.

Inventor： Jonathan D. Harms ,  Wei Chen ,  Sunil S. Murthy

IPC: H01L29/82 ,  H01L21/02 ,  H01L29/66 ,  H01L21/00 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

Abstract: Some embodiments include a magnetic tunnel junction comprising magnetic reference material having an iridium-containing region between a multi-layer stack and a polarizer region. Some embodiments include a magnetic tunnel junction having a conductive first magnetic electrode which contains magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and which contains magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic reference material of the second electrode includes a first region containing a stack of cobalt alternating with one or more of platinum, palladium and nickel; includes an iridium-containing second region over the first region; and includes a cobalt-containing third region over the second region. The third region is directly against the non-magnetic insulator material.

Abstract translation: 一些实施例包括磁隧道结，其包括在多层堆叠和偏振器区域之间具有含铱区域的磁性参考材料。 一些实施例包括磁性隧道结，其具有包含磁记录材料的导电第一磁电极，与第一电极间隔开并且包含磁性参考材料的导电第二磁极和在第一和第二电极之间的非磁性绝缘体材料。 第二电极的磁性参考材料包括含有与铂，钯和镍中的一种或多种交替的钴的堆叠的第一区域; 包括在所述第一区域上的含铱的第二区域; 并且在第二区域上包括含钴的第三区域。 第三区域直接抵靠非磁性绝缘体材料。

公开(公告)号：US20150270480A1

公开(公告)日：2015-09-24

申请号：US14219748

申请日：2014-03-19

Applicant: Micron Technology, Inc.

Inventor： Jonathan D. Harms ,  Wei Chen ,  Sunil S. Murthy

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/02

CPC classification number: H04L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H04L43/02

Abstract: Spin torque transfer memory cells and methods of forming the same are described herein. As an example, spin torque transfer memory cells may include a self-aligning polarizer, a pinned polarizer, and a storage material formed between the self-aligning polarizer and the pinned polarizer.

Abstract translation: 旋转转矩传递存储器单元及其形成方法在此描述。 作为示例，自旋扭矩传递存储单元可以包括自对准偏振器，钉扎偏振器和形成在自对准偏振器和被钉入偏振器之间的存储材料。