公开(公告)号：US20120319108A1

公开(公告)日：2012-12-20

申请号：US13602393

申请日：2012-09-04

申请人： Junichiro SAKATA ,  Hiromichi GODO ,  Takashi SHIMAZU

发明人： Junichiro SAKATA ,  Hiromichi GODO ,  Takashi SHIMAZU

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/78669 ,  H01L29/78696

摘要： To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided.

摘要翻译： 为了抑制包括氧化物半导体层的晶体管或包括晶体管的半导体器件的电特性的劣化。 在其中使用氧化物半导体形成沟道层的晶体管中，提供与氧化物半导体层的表面接触的硅层。 此外，硅层设置成与至少形成沟道的氧化物半导体层的区域接触，并且提供与氧化物半导体层的区域接触的源电极层和漏电极层， 不提供硅层。

公开(公告)号：US20120286256A1

公开(公告)日：2012-11-15

申请号：US13552899

申请日：2012-07-19

申请人： Yuji IWAKI ,  Junichiro SAKATA ,  Hisao IKEDA ,  Tomoya AOYAMA ,  Takaaki NAGATA ,  Takahiro KAWAKAMI ,  Satoshi SEO ,  Ryoji NOMURA

发明人： Yuji IWAKI ,  Junichiro SAKATA ,  Hisao IKEDA ,  Tomoya AOYAMA ,  Takaaki NAGATA ,  Takahiro KAWAKAMI ,  Satoshi SEO ,  Ryoji NOMURA

IPC分类号： H01L51/54

CPC分类号： H01L51/5048 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0072 ,  H01L51/0081

摘要： An object of the present invention is to provide a light-emitting element with high luminous efficiency, and a light-emitting element of low-voltage driving. Another object is to provide a light-emitting device with low power consumption by using the light-emitting element. Another object is to provide an electronic appliance with low power consumption by using the light-emitting device in a display portion. A light-emitting element includes, between a pair of electrodes, a layer containing a composite material of a first organic compound and an inorganic compound and a layer containing a second organic compound being in contact with the layer containing the composite material, wherein the second organic compound does not have a peak of an absorption spectrum in a wavelength region of 450 to 800 nm if the second organic compound is compounded with the inorganic compound.

摘要翻译： 本发明的目的是提供一种发光效率高的发光元件和低电压驱动用发光元件。 另一个目的是通过使用发光元件来提供具有低功耗的发光装置。 另一个目的是通过在显示部分中使用发光装置来提供具有低功耗的电子设备。 发光元件在一对电极之间包括含有第一有机化合物和无机化合物的复合材料的层和包含与含有复合材料的层接触的第二有机化合物的层，其中第二 如果第二有机化合物与无机化合物混合，有机化合物在450-800nm的波长区域中不具有吸收光谱的峰值。

公开(公告)号：US20120280225A1

公开(公告)日：2012-11-08

申请号：US13455476

申请日：2012-04-25

申请人： Junichiro SAKATA

发明人： Junichiro SAKATA

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1156 ,  H01L28/40

摘要： An oxide semiconductor is used for a semiconductor layer of a transistor included in a semiconductor device, whereby leakage current between a source and a drain can be reduced, so that reduction in power consumption of a semiconductor device and a memory device including the semiconductor device and an improvement in characteristics of retaining stored data (electric charge) in the semiconductor device and the memory device can be achieved. Further, a drain electrode of the transistor, the semiconductor layer, and a first electrode which overlaps with the drain electrode form a capacitor, and a gate electrode is led to an overlying layer at a position which overlaps with the capacitor. Thus, the semiconductor device and the memory device including the semiconductor device can be miniaturized.

摘要翻译： 氧化物半导体被用于半导体器件中包括的晶体管的半导体层，由此可以减小源极与漏极之间的漏电流，从而降低半导体器件和包括半导体器件和存储器件的存储器件的功耗 可以实现在半导体器件和存储器件中保持存储数据（电荷）的特性的改进。 此外，晶体管的漏电极，半导体层和与漏电极重叠的第一电极形成电容器，并且在与电容器重叠的位置处将栅电极引导到上覆层。 因此，可以使包括半导体器件的半导体器件和存储器件小型化。

公开(公告)号：US20120241812A1

公开(公告)日：2012-09-27

申请号：US13478547

申请日：2012-05-23

申请人： Hisao IKEDA ,  Junichiro SAKATA

发明人： Hisao IKEDA ,  Junichiro SAKATA

IPC分类号： H01L33/40

CPC分类号： H01L51/5088 ,  H01L51/5048

摘要： A light-emitting element is disclosed that can drive at a low driving voltage and that has a longer lifetime than the conventional light-emitting element, and a method is disclosed for manufacturing the light-emitting element. The disclosed light-emitting element includes a plurality of layers between a pair of electrodes; and at least one layer among the plurality of layers contains one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. Such the light-emitting element can suppress the crystallization of a layer containing one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. As a result, a lifetime of the light-emitting element can be extended.

摘要翻译： 公开了一种可以在低驱动电压下驱动并且比常规发光元件具有更长寿命的发光元件，并且公开了一种用于制造发光元件的方法。 所公开的发光元件包括一对电极之间的多个层; 并且所述多个层中的至少一层包含选自氧化物半导体和金属氧化物的一种化合物和具有高空穴传输性的化合物。 这样的发光元件可以抑制含有选自氧化物半导体和金属氧化物的一种化合物的层和具有高空穴传输性的化合物的层的结晶。 结果，可以延长发光元件的寿命。

公开(公告)号：US20110108864A1

公开(公告)日：2011-05-12

申请号：US13009111

申请日：2011-01-19

申请人： Satoshi SEO ,  Daisuke KUMAKI ,  Hisao IKEDA ,  Junichiro SAKATA

发明人： Satoshi SEO ,  Daisuke KUMAKI ,  Hisao IKEDA ,  Junichiro SAKATA

IPC分类号： H01L27/15

CPC分类号： H01L27/156 ,  H01L27/322 ,  H01L27/3244 ,  H01L51/0059 ,  H01L51/0071 ,  H01L51/0081 ,  H01L51/5088 ,  H01L2251/5315 ,  H01L2251/558

摘要： Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.

摘要翻译： 发光元件具有由于发光元件内的散射光或反射光而导致其光提取效率低的问题。 需要通过新的方法来增强发光元件的光提取效率。 根据本发明，发光元件包括第一层产生孔，包括用于每种发射颜色的发光层的第二层和在阳极和阴极之间产生电子的第三层，以及第一层 层根据每个发射颜色的包含发光层的各层而不同。 使用其中混合有机化合物和金属氧化物的层作为第一层，因此即使当厚度增加时驱动电压也不会增加，这是优选的。

公开(公告)号：US20100304529A1

公开(公告)日：2010-12-02

申请号：US12787757

申请日：2010-05-26

申请人： Toshinari SASAKI ,  Hiroki OHARA ,  Junichiro SAKATA

发明人： Toshinari SASAKI ,  Hiroki OHARA ,  Junichiro SAKATA

IPC分类号： H01L21/16 ,  H01L21/84

CPC分类号： H01L29/66969 ,  H01L21/02164 ,  H01L21/02565 ,  H01L21/30604 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a highly reliable semiconductor device including a thin film transistor having stable electric characteristics. In addition, another object is to manufacture a highly reliable semiconductor device at low cost with high productivity. In a method for manufacturing a semiconductor device including a thin film transistor including an oxide semiconductor layer as a channel formation region, the oxide semiconductor layer is heated under a nitrogen atmosphere to lower its resistance, thereby forming a low-resistance oxide semiconductor layer. Further, resistance of a region of the low-resistance oxide semiconductor layer, which is overlapped with a gate electrode layer, is selectively increased, thereby forming a high-resistance oxide semiconductor layer. Resistance of the oxide semiconductor layer is increased by forming a silicon oxide film in contact with the oxide semiconductor layer by a sputtering method.

摘要翻译： 目的在于提供一种具有稳定电特性的薄膜晶体管的高度可靠的半导体装置。 此外，另一个目的是以高生产率以低成本制造高度可靠的半导体器件。 在包括具有作为沟道形成区域的氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，在氮气气氛下加热氧化物半导体层以降低其电阻，从而形成低电阻氧化物半导体层。 此外，选择性地增加与栅电极层重叠的低电阻氧化物半导体层的区域的电阻，从而形成高电阻氧化物半导体层。 通过溅射法形成与氧化物半导体层接触的氧化硅膜，可提高氧化物半导体层的电阻。

公开(公告)号：US20100274373A1

公开(公告)日：2010-10-28

申请号：US12834642

申请日：2010-07-12

申请人： Junichiro SAKATA

发明人： Junichiro SAKATA

IPC分类号： G06F17/00

CPC分类号： G06F3/16 ,  G06F3/0481 ,  G06F17/30772 ,  G10H1/0041 ,  G11B27/034 ,  G11B27/105 ,  G11B27/34 ,  G11B2020/10546 ,  G11B2220/213 ,  G11B2220/2545 ,  H04N21/4312 ,  H04N21/4825

摘要： Audio data are played back by a personal computer a relationship with a playback process recognized easily. Displays showing the contents of play lists are arranged and displayed so that the contents become continuous in sequence in a playback sequence from content that is currently being played back from a display of an operation element that causes an image of a playback process to appear or from a display showing the content which is currently being played back. When the playback of one piece of content of one play list from among a plurality of play lists is terminated and one piece of content of an other play list is played back, at least the content that is currently being played back and content to be subsequently played back are displayed so that the contents can be distinguished.

公开(公告)号：US20100224873A1

公开(公告)日：2010-09-09

申请号：US12717324

申请日：2010-03-04

申请人： Junichiro SAKATA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

发明人： Junichiro SAKATA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

摘要翻译： 本发明的目的是提供一种包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括半导体层为氧化物半导体层的反交错薄膜晶体管的半导体器件中，在氧化物半导体层上设置有缓冲层。 缓冲层与半导体层的沟道形成区域和源极和漏极电极层接触。 缓冲层的膜具有电阻分布。 设置在半导体层的沟道形成区域上的区域具有比半导体层的沟道形成区域更低的导电性，并且与源极和漏极电极层接触的区域具有比半导体的沟道形成区域更高的导电性 层。

公开(公告)号：US20100159639A1

公开(公告)日：2010-06-24

申请号：US12634096

申请日：2009-12-09

申请人： Junichiro SAKATA

发明人： Junichiro SAKATA

IPC分类号： H01L21/34

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02664 ,  H01L22/12 ,  H01L27/1225 ,  H01L29/7869

摘要： A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation region, a source region, and a drain region can be formed with the use of the regions with different conductivities formed in the oxide semiconductor layer.

摘要翻译： 在包含氢的氧化物半导体层上选择性地设置氢阻挡层，通过进行氧化处理，从氧化物半导体层中的给定区域选择性地解吸氢，从而在氧化物半导体层中形成具有不同导电性的区域。 之后，可以通过使用形成在氧化物半导体层中的不同导电率的区域来形成沟道形成区域，源极区域和漏极区域。

公开(公告)号：US20070221888A1

公开(公告)日：2007-09-27

申请号：US11679383

申请日：2007-02-27

申请人： Junichiro SAKATA

发明人： Junichiro SAKATA

IPC分类号： H01B1/12

CPC分类号： C09K11/584 ,  H05B33/145

摘要： The present invention provides a light emitting material having high emission efficiency, a light emitting element which can be driven at low voltage, and a light emitting device and an electronic device with reduced power consumption. The light emitting element includes, over a substrate 100, a first electrode 101, a first insulating layer 102, a light emitting layer 103, a second insulating layer 104, and a second electrode 105, in which the light emitting layer 103 includes a light emitting element including zinc (Zn), gallium (Ga), manganese (Mn) and sulfur (S).

摘要翻译： 本发明提供了一种具有高发光效率的发光材料，能够以低电压驱动的发光元件，以及具有降低功耗的发光器件和电子器件。 发光元件在衬底100上包括第一电极101，第一绝缘层102，发光层103，第二绝缘层104和第二电极105，其中发光层103包括光 包括锌（Zn），镓（Ga），锰（Mn）和硫（S）的发光元件。