Air conditioner
    81.
    发明授权
    Air conditioner 有权
    冷气机

    公开(公告)号:US07614248B2

    公开(公告)日:2009-11-10

    申请号:US11710539

    申请日:2007-02-26

    IPC分类号: F25D21/14

    CPC分类号: F24F13/22 F24F1/025 F24F13/20

    摘要: An air conditioner includes a main drain pan dividing an inner space of the air conditioner into upper and lower halves, an outdoor blower unit that is provided under the main drain pan to support the main drain pan and discharge the heat exchanged air with a refrigerant to an outdoor side, and a base pan defining a lower outer appearance of the air conditioner, wherein the outdoor blower unit is provided at a side with a coupling flange for receiving a heat exchanger for the heat exchange between the refrigerant and the air.

    摘要翻译: 空调机包括将空调机的内部空间分成上半部分的主排水盘,设置在主排水盘下方以支撑主排水盘并将制冷剂排出热交换空气的室外鼓风机单元 室外侧和限定空气调节器外观较低的底盘,其中室外鼓风机单元设置有连接法兰,用于接收用于制冷剂和空气之间的热交换的热交换器。

    Multi-layer ceramic capacitor
    83.
    发明授权
    Multi-layer ceramic capacitor 有权
    多层陶瓷电容

    公开(公告)号:US07545626B1

    公开(公告)日:2009-06-09

    申请号:US12073917

    申请日:2008-03-12

    IPC分类号: H01G4/06

    CPC分类号: H01G4/30 H01G4/12 H01G4/255

    摘要: A multi-layer ceramic capacitor including: a ceramic sintered body having cover layers provided on upper and lower surfaces thereof as outermost layers and a plurality of ceramic layers disposed between the cover layers; first and second internal electrodes formed on the ceramic layers, the first and second internal electrodes stacked to interpose one of the ceramic layers; first and second external electrodes formed on opposing sides of the ceramic sintered body to connect to the first and second internal electrodes, respectively; and anti-oxidant electrode layers formed between the cover layers and adjacent ones of the ceramic layers, respectively, the anti-oxidant electrode layers arranged not to affect capacitance.

    摘要翻译: 一种多层陶瓷电容器,包括:陶瓷烧结体,其具有在其上表面和下表面上设置为最外层的覆盖层和设置在所述覆盖层之间的多个陶瓷层; 形成在所述陶瓷层上的第一和第二内部电极,所述第一和第二内部电极层叠以插入所述陶瓷层之一; 形成在陶瓷烧结体的相对侧上的第一和第二外部电极分别连接到第一和第二内部电极; 以及在覆盖层和相邻的陶瓷层之间形成的抗氧化剂电极层,抗氧化剂电极层分别布置成不影响电容。

    Air conditioner
    84.
    发明申请
    Air conditioner 审中-公开
    冷气机

    公开(公告)号:US20080000252A1

    公开(公告)日:2008-01-03

    申请号:US11710540

    申请日:2007-02-26

    IPC分类号: F25D21/14

    摘要: An air conditioner is provided. The air conditioner includes a main and sub drain pan, a first and second heat exchanger, a condensed water pipe, and a pipe coupling element. The main drain pan is provided between a front frame and a rear frame, to divide a space between the rear frame and the front frame into an upper and lower section. The first and second heat exchangers are respectively provided at a lower and upper portion of the main drain pan, to allow heat exchange to occur between air and coolant. The sub-drain pan is provided at the lower portion of the main drain pan, to collect condensed water generated by the first and second heat exchangers. The condensed water pipe guides condensed water collected in a base pan to the sub-drain pan. The pipe coupling element detachably couples one end of the condensed water pipe to the sub-drain pan.

    摘要翻译: 提供空调。 空调包括主排水盘,副排水盘,第一和第二热交换器,冷凝水管和管接头元件。 主排水盘设置在前框架和后框架之间,以将后框架和前框架之间的空间分成上部和下部。 第一和第二热交换器分别设置在主排水盘的下部和上部,以允许在空气和冷却剂之间发生热交换。 副排水盘设置在主排水盘的下部,以收集由第一和第二热交换器产生的冷凝水。 冷凝水管将收集在底盘中的冷凝水引导到副排水盘。 管连接元件将冷凝水管的一端可拆卸地连接到副排水盘。

    Semiconductor device and method for fabricating the same

    公开(公告)号:US06573576B2

    公开(公告)日:2003-06-03

    申请号:US09944151

    申请日:2001-09-04

    IPC分类号: H01L2976

    摘要: A semiconductor device and a method for fabricating the same is disclosed, which minimizes device degradation, minimizes noises, and simplifies the fabrication process. The device includes a substrate having a first semiconductor layer, a buried insulating film, and a second semiconductor layer stacked; a field oxide film for separating the second semiconductor layer into a first region and a second region; a recess region formed in a particular region of the second region; gate insulating films and gate electrodes formed in stacks on each of a particular region in the first region and the recess region in the second region; first impurity regions formed in surfaces of the second semiconductor layer on both sides of the gate electrode in the first region; and second impurity regions formed in surfaces of the second semiconductor layer on both sides of the gate electrode in the recess region in the second region so that the second semiconductor layer below the gate electrode is fully depleted.