公开(公告)号：US20060081919A1

公开(公告)日：2006-04-20

申请号：US11044065

申请日：2005-01-28

申请人： Tomoki Inoue ,  Hideaki Ninomiya ,  Koichi Sugiyama

发明人： Tomoki Inoue ,  Hideaki Ninomiya ,  Koichi Sugiyama

IPC分类号： H01L29/24

CPC分类号： H01L29/7397 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/66348

摘要： A semiconductor device comprising: a first-conductivity-type base layer; a second-conductivity-type emitter layer formed on a first main surface of said first-conductivity-type base layer; a collector electrode formed in contact with a surface of said second-conductivity-type emitter layer; a second-conductivity-type base layer formed on a second main surface of said first-conductivity-type base layer; a plurality of trenches which extend through said second-conductivity-type base layer to reach a predetermined depth of said first-conductivity-type base layer, and has a longitudinal direction in one direction; a gate electrode formed in said trench via a gate insulating film; a first-conductivity-type emitter layer selectively formed in contact with side walls of said trench, in a surface portion of said second-conductivity-type base layer; an emitter electrode formed in contact with a surface of said second-conductivity-type base layer and a surface of said first-conductivity-type emitter layer; and a second-conductivity-type semiconductor layer selectively formed in a region along the longitudinal direction of said trench, near the surface of said first-conductivity-type emitter layer.

摘要翻译： 一种半导体器件，包括：第一导电型基底层; 形成在所述第一导电型基底层的第一主表面上的第二导电型发射极层; 与所述第二导电型发射极层的表面接触地形成的集电极; 形成在所述第一导电型基底层的第二主表面上的第二导电型基底层; 多个沟槽，其延伸穿过所述第二导电型基底层，以达到所述第一导电型基底层的预定深度，并且在一个方向上具有纵向方向; 通过栅极绝缘膜形成在所述沟槽中的栅电极; 在所述第二导电型基底层的表面部分中选择性地形成为与所述沟槽的侧壁接触的第一导电型发射极层; 与所述第二导电型基极层的表面和所述第一导电型发射极层的表面接触形成的发射极; 以及在所述第一导电型发射极层的表面附近，沿着所述沟槽的纵向的区域选择性地形成的第二导电型半导体层。

公开(公告)号：US20050263852A1

公开(公告)日：2005-12-01

申请号：US10974810

申请日：2004-10-28

申请人： Tsuneo Ogura ,  Masakazu Yamaguchi ,  Tomoki Inoue ,  Hideaki Ninomiya ,  Koichi Sugiyama

发明人： Tsuneo Ogura ,  Masakazu Yamaguchi ,  Tomoki Inoue ,  Hideaki Ninomiya ,  Koichi Sugiyama

IPC分类号： H01L29/78 ,  H01L27/082 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/739

CPC分类号： H01L29/1095 ,  H01L29/0834 ,  H01L29/7397

摘要： A semiconductor device comprises a first base layer of a first conductivity type; a plurality of second base layers of a second conductivity type, provided on a part of a first surface of the first base layer; trenches formed on each side of the second base layers, and formed to be deeper than the second base layers; an emitter layer formed along the trench on a surface of the second base layers; a collector layer of the second conductivity type, provided on a second surface of the first base layer opposite to the first surface; an insulating film formed on an inner wall of the trench, the insulating film being thicker on a bottom of the trench than on a side surface of the trench; a gate electrode formed within the trench, and isolated from the second base layers and the emitter layer by the insulating film; and a space section provided between the second base layers adjacent to each other, the space section being deeper than the second base layers and being electrically isolated from the emitter layer and the second base layers.

摘要翻译： 半导体器件包括第一导电类型的第一基极层; 多个第二导电类型的第二基层，设置在所述第一基底层的第一表面的一部分上; 沟槽形成在第二基底层的每一侧上，并且形成为比第二基底层更深; 在所述第二基底层的表面上沿着所述沟槽形成的发射极层; 设置在与第一表面相对的第一基底层的第二表面上的第二导电类型的集电极层; 形成在所述沟槽的内壁上的绝缘膜，所述绝缘膜在所述沟槽的底部比在所述沟槽的侧表面上更厚; 形成在所述沟槽内并与所述第二基极层和所述发射极层通过所述绝缘膜隔离的栅电极; 以及设置在彼此相邻的第二基底层之间的空间部分，空间部分比第二基底层更深，并且与发射极层和第二基底层电隔离。

公开(公告)号：US20050230775A1

公开(公告)日：2005-10-20

申请号：US11082901

申请日：2005-03-18

申请人： Mikio Watanabe ,  Tomoki Inoue ,  Masafumi Inuiya

发明人： Mikio Watanabe ,  Tomoki Inoue ,  Masafumi Inuiya

IPC分类号： H01L27/146 ,  H01L29/04

CPC分类号： H01L27/14647 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14687 ,  H01L27/14692

摘要： In a photoelectric converting film stack type solid-state image pickup device, a plurality of photoelectric converting film are stacked on a semiconductor substrate in which a signal readout circuit is formed, each of the photoelectric converting films is sandwiched between a common electrode film and pixel electrode films corresponding to respective pixels, and photo-charges generated in the photoelectric converting films are taken out through the pixel electrode films. In the solid-state image pickup device, a common electrode film for a first photoelectric converting film is used also as a common electrode film for a second photoelectric converting film, the first photoelectric converting film is stacked below the common electrode film, and the second photoelectric converting film is stacked above the common electrode film.

摘要翻译： 在光电转换膜堆叠型固态摄像装置中，在形成信号读出电路的半导体基板上层叠多个光电转换膜，将各光电转换膜夹在公共电极膜和像素 对应于各个像素的电极膜和在光电转换膜中产生的光电荷通过像素电极膜被取出。 在固态摄像装置中，第一光电转换膜用公共电极膜也用作第二光电转换膜的公共电极膜，第一光电转换膜堆叠在公共电极膜的下方，第二光电转换膜 光电转换膜层叠在公共电极膜的上方。

公开(公告)号：US06917060B2

公开(公告)日：2005-07-12

申请号：US10662295

申请日：2003-09-16

申请人： Yoshihiro Yamaguchi ,  Hideaki Ninomiya ,  Tomoki Inoue

发明人： Yoshihiro Yamaguchi ,  Hideaki Ninomiya ,  Tomoki Inoue

IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/08 ,  H01L29/739 ,  H01L29/78 ,  H01L29/74

CPC分类号： H01L29/0696 ,  H01L29/0834 ,  H01L29/7394 ,  H01L29/7397

摘要： A vertical semiconductor device including a first conductivity type base layer having resistance higher then of a first conductivity type buffer layer, the first conductivity type buffer layer formed in one surface portion of the first conductivity type base layer, a second conductivity type drain layer selectively formed in a surface portion of the first conductivity type buffer layer, a second conductivity type base layer selectively formed in the other surface portion of the first conductivity type base layer, a first conductivity type source layer selectively formed in a surface portion of the second conductivity type base layer, a gate insulating film formed on the second conductivity type base layer between the first conductivity type source layer and the first conductivity type base layer, a gate electrode formed on the second conductivity type base layer via the gate insulating film, a drain electrode electrically connected to the second conductivity type drain layer, and a source electrode electrically connected to the first conductivity type source layer and the second conductivity type base layer, wherein the drain electrode is not electrically connected to the first conductivity buffer layer.

摘要翻译： 一种垂直半导体器件，包括具有比第一导电型缓冲层高的电阻的第一导电型基极层，形成在第一导电型基极层的一个表面部分中的第一导电型缓冲层，选择性地形成第二导电型漏极层 在第一导电型缓冲层的表面部分中，选择性地形成在第一导电型基底层的另一个表面部分中的第二导电型基极层，选择性地形成在第二导电型基底层的表面部分中的第一导电型源极 形成在第一导电型源极层和第一导电型基极层之间的第二导电型基极层上的栅极绝缘膜，经由栅极绝缘膜形成在第二导电型基极层上的栅极电极，漏极电极 电连接到第二导电类型漏极层，以及sou rce电极与第一导电型源极层和第二导电型基极层电连接，其中漏极电极不与第一导电性缓冲层电连接。

公开(公告)号：US06891224B2

公开(公告)日：2005-05-10

申请号：US10461345

申请日：2003-06-16

申请人： Tsuneo Ogura ,  Tomoki Inoue ,  Hideaki Ninomiya ,  Koichi Sugiyama

发明人： Tsuneo Ogura ,  Tomoki Inoue ,  Hideaki Ninomiya ,  Koichi Sugiyama

IPC分类号： H01L29/78 ,  H01L21/8228 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739 ,  H01L29/76 ,  H01L29/94 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/062 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/1095 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/7394 ,  H01L29/7397

摘要： A semiconductor device includes: a base layer of a first conductivity type, a barrier layer of a first conductivity type formed on the base layer, a well layer of a second conductivity type formed on the barrier layer; a trench formed from the surface of the well layer to such a depth as to reach a region in the vicinity of a junction surface between the barrier layer and the base layer, a gate electrode formed in the trench via a gate insulating film, a contact layer of the second conductivity type selectively formed in a surface portion of the well layer, a source layer of the first conductivity type selectively formed in the surface portion of the well layer so as to contact a side wall of the gate insulating film in the trench and the contact layer, and a first main electrode formed so as to contact the contact layer and the source layer, wherein assuming that a total sum of impurity densities in the region of the barrier layer between the trenches is Qn, the Qn has a relation of the following equation: Qn≧2×1012 cm−2.

摘要翻译： 半导体器件包括：形成在第一导电类型的基底层，形成在基底层上的第一导电类型的势垒层，形成在阻挡层上的第二导电类型的阱层; 从阱层的表面形成的沟槽到达阻挡层和基底层之间的接合面附近的区域的深度，通过栅极绝缘膜形成在沟槽中的栅电极， 选择性地形成在阱层的表面部分中的第二导电类型的层，选择性地形成在阱层的表面部分中以与沟槽中的栅极绝缘膜的侧壁接触的第一导电类型的源极层 以及形成为与接触层和源极层接触的第一主电极，其中假设沟槽之间的势垒层的区域中的杂质浓度的总和为Qn，则Qn具有关系 具有以下等式：Qn> = 2×10×12

公开(公告)号：US20050067548A1

公开(公告)日：2005-03-31

申请号：US10951532

申请日：2004-09-28

申请人： Tomoki Inoue

发明人： Tomoki Inoue

IPC分类号： F16L3/02 ,  F16B5/02 ,  F16L3/16 ,  F16L3/237 ,  F16L3/26 ,  F16L55/035 ,  F16M13/00

CPC分类号： F16L3/26 ,  F16B5/0258 ,  F16L3/237 ,  F16L55/035

摘要： The present invention is a bracket for a fluid transport tube including an elongated bracket body having a length in a longitudinal direction, a tube clamp for holding the fluid transport tube in a direction transverse to the longitudinal direction, a mounting component for securing the bracket body and tube clamp to the side of a car wherein the mounting component comprises a bolt passage hole for passing a bolt having a bolt head through the passage hole to secure the mounting component to the side of the car and a vibration-absorbing bushing 9 made of a rubber-like resilient material with an annular fitting groove 15 in the middle of its outer circumference in the thickness direction thereof fitted to the mounting component 5 in such a manner to clamp part of said bushing between the bolt head and said mounting component, and another part of said bushing between said mounting component and the car body.

摘要翻译： 本发明是一种用于流体输送管的支架，其包括长度方向上的长度的细长支架体，用于将流体输送管沿纵向方向保持的管夹，用于固定支架体的安装部件 和管夹在汽车侧面，其中安装部件包括用于使具有螺栓头的螺栓穿过通孔的螺栓通道孔，以将安装部件固定在汽车侧面;以及吸振套筒9，其由 橡胶状弹性材料，其厚度方向的外周的中间具有环状的配合槽15，其以这样的方式嵌合到安装部件5上，以将所述衬套的一部分夹在螺栓头和所述安装部件之间;以及 所述安装部件和车体之间的所述衬套的另一部分。

公开(公告)号：US06762365B2

公开(公告)日：2004-07-13

申请号：US10304556

申请日：2002-11-26

申请人： Tomoki Inoue ,  Kazuhito Kasahara

发明人： Tomoki Inoue ,  Kazuhito Kasahara

IPC分类号： H02G1508

CPC分类号： F16L37/0987

摘要： A connector cover for providing a water shield between a connector and a pipe comprises two cover elements. The cover elements are joined each other to construct a tubular water shield, which internally has a connector receiving portion on one axial side thereof for receiving a pipe inserting portion of a connector, and a pipe receiving portion on an opposite axial side thereof for receiving a pipe. The pipe receiving portion has a pipe receiving section on an opposite axial side thereof for receiving an opposite axial side from an annular projection of the pipe, and a projection receiving section on one axial side thereof for receiving annular projection. An inner diameter of the pipe receiving section is designed generally identical to an outer diameter of the pipe.

摘要翻译： 用于在连接器和管之间提供防水罩的连接器盖包括两个盖元件。 盖元件彼此连接以构造管状防水罩，其内部具有在其一个轴向侧上的连接器接收部分，用于容纳连接器的管插入部分，以及在其相对的轴向侧上的管接收部分，用于接收 管。 管接收部具有在其相对的轴向侧上具有用于接收与管的环形突起相对的轴向侧的管接收部和在其一个轴向侧上用于接收环形突起的突起接收部。 管接收部的内径大致与管的外径相同。

公开(公告)号：US06650001B2

公开(公告)日：2003-11-18

申请号：US10053657

申请日：2002-01-24

申请人： Yoshihiro Yamaguchi ,  Hideaki Ninomiya ,  Tomoki Inoue

发明人： Yoshihiro Yamaguchi ,  Hideaki Ninomiya ,  Tomoki Inoue

IPC分类号： H01L27082

CPC分类号： H01L29/0696 ,  H01L29/0834 ,  H01L29/7394 ,  H01L29/7397

摘要： A lateral semiconductor device includes an n-type buffer layer (15) selectively formed in the surface of an n-type base layer (14), a p-type drain layer (16) selectively formed in the surface of the n-type buffer layer (15), a p-type base layer (17) formed in the surface of the n-type base layer (14) so as to surround the n-type buffer layer (15), an n+-type source layer (18) selectively formed in the surface of the p-type base layer (17), a source electrode (24) in contact with the p-type base layer (17) and the n+-type source layer (18), a drain electrode (22) in contact with the p-type drain layer (16), and a gate electrode (20) formed via a gate insulating film (19) on the surface of the p-type base layer (17) sandwiched between the n+-type source layer (18) and the n-type base layer (14). The p-type drain layer (16) has an annular structure or horseshoe-shaped structure, or is divided into a plurality of portions. This realizes a high breakdown voltage with a low ON voltage.

摘要翻译： 横向半导体器件包括：n型缓冲层（15），其选择性地形成在n型基极层（14）的表面; p型漏极层（16），其选择性地形成在n型缓冲层 层（15），形成在n型基底层（14）的表面中以围绕n型缓冲层（15）的p型基底层（17），n +型源 选择性地形成在p型基底层（17）的表面中的层（18），与p型基底层（17）和n +型源极层（18）接触的源极（24） ），与p型漏极层（16）接触的漏电极（22）和在p型基极层（17）的表面上经由栅极绝缘膜（19）形成的栅电极（20） 夹在n +型源极层（18）和n型基极层（14）之间。 p型漏极层（16）具有环状结构或马蹄形结构，或分为多个部分。 这实现了具有低导通电压的高击穿电压。

公开(公告)号：US5860005A

公开(公告)日：1999-01-12

申请号：US756339

申请日：1996-11-26

申请人： Tomoki Inoue

发明人： Tomoki Inoue

IPC分类号： G06F9/44 ,  G06F17/30 ,  G06F13/00

CPC分类号： G06F8/20 ,  G06F8/70

摘要： An apparatus for supporting development of information processing systems where a plurality of computers are incorporated. A project data entry unit provides functions for entering various information descriptive of project specifications including information on a plurality of applications and data resources to be integrated into the target information processing system. An application property analyzing unit analyzes properties of each application, thus creating an application property table. Likewise, a data property analyzing unit analyzes properties of each data resource, thus creating a data property table. Consulting those two tables, a system pattern searching unit produces some search parameters. A system pattern database is prepared beforehand for storing a variety of system patterns associated with different search parameters. The system pattern searching unit searches this system pattern database for system patterns that correspond to the search parameters produced above, thus extracting a plurality of system patterns. A system pattern combination unit then combines the system patterns extracted by the system pattern searching unit to propose an optimum system configuration.

摘要翻译： 一种用于支持其中结合有多个计算机的信息处理系统的开发的装置。 项目数据输入单元提供用于输入描述项目规格的各种信息的功能，包括关于要集成到目标信息处理系统中的多个应用和数据资源的信息。 应用程序属性分析单元分析每个应用程序的属性，从而创建应用程序属性表。 类似地，数据属性分析单元分析每个数据资源的属性，从而创建数据属性表。 咨询这两个表，系统模式搜索单元产生一些搜索参数。 预先准备了用于存储与不同搜索参数相关联的各种系统模式的系统模式数据库。 系统模式搜索单元在该系统模式数据库中搜索与上述产生的搜索参数对应的系统模式，从而提取多个系统模式。 然后，系统模式组合单元组合由系统模式搜索单元提取的系统模式，以提出最佳系统配置。