摘要:
In a photoelectric converting film stack type solid-state image pickup device, a plurality of photoelectric converting film are stacked on a semiconductor substrate in which a signal readout circuit is formed, each of the photoelectric converting films is sandwiched between a common electrode film and pixel electrode films corresponding to respective pixels, and photo-charges generated in the photoelectric converting films are taken out through the pixel electrode films. In the solid-state image pickup device, a common electrode film for a first photoelectric converting film is used also as a common electrode film for a second photoelectric converting film, the first photoelectric converting film is stacked below the common electrode film, and the second photoelectric converting film is stacked above the common electrode film.
摘要:
In a photoelectric converting film stack type solid-state image pickup device, a plurality of photoelectric converting film are stacked on a semiconductor substrate in which a signal readout circuit is formed, each of the photoelectric converting films is sandwiched between a common electrode film and pixel electrode films corresponding to respective pixels, and photo-charges generated in the photoelectric converting films are taken out through the pixel electrode films. In the solid-state image pickup device, a common electrode film for a first photoelectric converting film is used also as a common electrode film for a second photoelectric converting film, the first photoelectric converting film is stacked below the common electrode film, and the second photoelectric converting film is stacked above the common electrode film.
摘要:
An information reader includes an imaging device that images a subject illuminated with light in a first wavelength region; an information-reading unit that reads information expressed by a site absorbing light in a second wavelength region based on imaging signals from the imaging device; and an information output unit, wherein the imaging device is a stack-typed imaging device that includes a plurality of pixel sections containing stacked two photoelectric conversion devices, with each of the two photoelectric conversion devices receiving light from the same position of the subject and converting it into the imaging signal, the two photoelectric conversion devices are a first photoelectric conversion device and a second photoelectric conversion device, and the information output unit generates the information based on a first imaging signal and a second imaging signal and outputs the information.
摘要:
A solid-state image sensing device comprising: a silicon substrate; a photoelectric conversion layer provided for absorbing a green light component to generate optical charge; and photodiodes provided in a shallow portion and in a deep portion respectively in a depth direction of the silicon substrate, wherein the solid-state image sensing device further comprises a trimming layer provided between the photoelectric conversion layer and the silicon substrate for adjusting intensity of each of respective color light components of the light which is transmitted through the photoelectric conversion layer so as to be made incident on the photodiodes.
摘要:
The present invention provides a film cartridge which can be looked up easily and a film image input system which can obtain a high quality image by using the film cartridge. The image signal of each frame image, of which the image quality is adjusted, is recorded in the EEPROM of the image record unit to be mounted on the film cartridge, in which the photo film is stored in a roll, so as to correspond to the frame number while the developed photo film is printed. And, the film image input system controls the adding circuit, the multiplying circuit and the gamma correction circuit based on the respective R, G, B color signals, which are respectively outputted to the black level controller, the white level controller and the gradation controller from the EEPROM, and outputs an image signal, which has the same gradation characteristics as that of the image signal which is recorded in the EEPROM, to the encoder. With this arrangement, a high-quality image can be obtained which is equal to a printed photograph on the TV monitor while the frame image is being reproduced.
摘要:
A solid-state electronic imaging device is provided that is capable of a transfer and a reverse transfer of signal electric charge. When conducting the reverse transfer of the signal electric charge, a reverse transfer signal is supplied to each set of a predetermined number of consecutive electrodes so that the reverse transfer will be produced at a high speed.
摘要:
In an imaging device having an electronic shutter, a shooting operation is achieved by the use of a CCD sensor, and a pre-shooting operation is conducted which accumulates signal electric charge such that the signal electric charge is discharged through a reverse transfer. In response to the amount of the signal electric charge thus discharged, the amount of exposure is determined (namely, the shutter speed and the iris value). By measuring the amount of the signal electric charge thus discharged for each predetermined range of a light receiving area, a multi-light measurement is achieved. The light receiving area has a plurality of photoelectric converter elements of the MOS capacitor type disposed therein and is subdivided into a plurality of areas which are insulated from each other. The pre-shooting operation is conducted which accumulates signal electric charge in the photoelectric converter elements such that the signal electric charge is discharged to the side of the substrate for each subdivided area. In response to the amount of the signal electric charge thus discharged, the amount of exposure is determined (namely, the shutter speed and the iris value). By measuring the amount of the signal electric charge thus discharged for each subdivided area, the multi-light measurement is achieved.
摘要:
A system is provided for producing image signals of a photographed subject image by a solid state image sensing device and for producing a brightness signal and line sequential color difference signals from the image signal. The subject image is sensed by the image sensing device which has a color filter formed thereon. First and second horizontal scanning lines of picture elements are alternately arranged and the picture elements are opposed to filter elements of the color filter. The first horizontal scanning lines separately transmit at least red light and green light and the second horizontal scanning lines transmit at least blue light and green light, to thereby obtain color image signals. The image signal thus obtained are signal processed to produce the line sequential color difference signals R-Y and B-Y. With this signal processing, the system can produce the image signals including the line sequential color difference signals by a simplified arrangement without impairing the color productivity.
摘要:
After electrode pads 20 formed on a silicon substrate 1 and an electrode 21 to be connected thereto are exposed, a photoelectric conversion layer 12 is formed via a first mask 23 which covers exposed surfaces of the electrode pads 20 and the electrode 21. Then, a second electrode 13 is formed on a third electrode via a second mask 26 in which an opening is formed. This establishes a connection between the second electrode 13 and the electrode pads 20.
摘要:
A solid-state image sensing device comprising: a silicon substrate; a photoelectric conversion layer provided for absorbing a green light component to generate optical charge; and photodiodes provided in a shallow portion and in a deep portion respectively in a depth direction of the silicon substrate, wherein the solid-state image sensing device further comprises a trimming layer provided between the photoelectric conversion layer and the silicon substrate for adjusting intensity of each of respective color light components of the light which is transmitted through the photoelectric conversion layer so as to be made incident on the photodiodes.