利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

198 条记录 (耗时 0.055 秒)

    Hole-filling technique using CVD aluminum and PVD aluminum integration
    81.
    发明授权
    Hole-filling technique using CVD aluminum and PVD aluminum integration 失效
    使用CVD铝和PVD铝整合的填孔技术

    公开(公告)号：US06605531B1

    公开(公告)日：2003-08-12

    申请号：US09127010

    申请日：1998-07-31

    申请人： Ted Guo ,  Wei Shi ,  Liang-Yuh Chen

    发明人： Ted Guo ,  Wei Shi ,  Liang-Yuh Chen

    IPC分类号： H01L214763

    CPC分类号： H01L21/2855 ,  H01L21/28556 ,  H01L21/76882

    摘要： The present invention provides a method for filling an aperture on a substrate by depositing a metal film on the substrate of insufficient thickness to fill the sub half-micron aperture and then annealing the substrate in a low pressure chamber at a temperature below a melting point of the deposited metal film. The present invention further provides forming a planarized film over the void-free aperture by physical vapor depositing a metal film over the annealed film.

    摘要翻译： 本发明提供了一种通过在基板上沉积不足厚度的金属膜来填充基板上的孔的方法，以填充次半微米孔径，然后在低压室内在低于熔点的温度下将基板退火 沉积金属膜。 本发明还提供了通过在退火膜上物理气相沉积金属膜而在无空隙孔上形成平坦化膜。

    Metallization process and method
    82.
    发明授权
    Metallization process and method 失效
    金属化过程和方法

    公开(公告)号：US06169030A

    公开(公告)日：2001-01-02

    申请号：US09007233

    申请日：1998-01-14

    申请人： Mehul B. Naik ,  Ted Guo ,  Liang-Yuh Chen ,  Roderick Craig Mosely ,  Israel Beinglass

    发明人： Mehul B. Naik ,  Ted Guo ,  Liang-Yuh Chen ,  Roderick Craig Mosely ,  Israel Beinglass

    IPC分类号： H01L2144

    CPC分类号： C23C14/32 ,  C23C14/025 ,  C23C14/046 ,  H01L21/2855 ,  H01L21/76877

    摘要： The invention generally provides an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free interconnections in high aspect ratio, sub-half micron applications. The invention provides a multi-step PVD process in which the plasma power is varied for each of the steps to obtain favorable fill characteristics as well as good reflectivity, morphology and throughput. The initial plasma powers are relatively low to ensure good, void-free filling of the aperture and, then, the plasma powers are increased to obtain the desired reflectivity and morphology characteristics. The invention provides an aperture filling process comprising physical vapor depositing a metal over the substrate and varying the plasma power during the physical vapor deposition. Preferably, the plasma power is varied from a first discrete low plasma power to a second discrete high plasma power. Even more preferably, the plasma power is varied from a first discrete low plasma power to a second discrete low plasma power to a third discrete high plasma power.

    摘要翻译： 本发明通常提供了一种改进的方法，用于在衬底上提供均匀的台阶覆盖和金属层的平坦化，以在高纵横比，半微米应用中形成连续的无空隙互连。 本发明提供了一种多步骤PVD工艺，其中等离子体功率对于每个步骤而言是变化的，以获得良好的填充特性以及良好的反射率，形态和产量。 初始等离子体功率相对较低，以确保孔的良好的无空隙填充，然后增加等离子体功率以获得期望的反射率和形态特征。 本发明提供一种孔填充方法，其包括在物理气相沉积中物理气相沉积衬底上的金属并改变等离子体功率。 优选地，等离子体功率从第一离散低等离子体功率变化到第二离散高等离子体功率。 更优选地，等离子体功率从第一离散低等离子体功率变化到第二离散低等离子体功率到第三离散高等离子体功率。

    In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization
    83.
    发明授权
    In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization 失效
    使用选择性CVD AL进行集成插头/互连金属化的现场封盖铝插头（CAP）工艺

    公开(公告)号：US6110828A

    公开(公告)日：2000-08-29

    申请号：US791653

    申请日：1996-12-30

    申请人： Ted Guo ,  Liang-Yuh Chen ,  Suchitra Subrahmanyan

    发明人： Ted Guo ,  Liang-Yuh Chen ,  Suchitra Subrahmanyan

    IPC分类号： H01L21/285 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/443

    CPC分类号： H01L21/76879

    摘要： The present invention generally provides a method of forming a structure having a selective CVD metal plug with a continuous barrier layer formed thereon. More particularly, the present invention applies a thin layer of warm PVD metal over a selective CVD metal plug and adjacent nodules on the dielectric field to planarize the metal surface. A barrier is then deposited over the planarized metal surface. Therefore, the invention provides the advantages of having (1) void-free, sub-half micron selective CVD metal via plugs and interconnects, and (2) a reduced number of process steps without the use of CMP, and (3) barrier layers over the metal plugs to improve the electromigration resistance of the metal.

    摘要翻译： 本发明通常提供一种形成具有在其上形成有连续势垒层的选择性CVD金属塞的结构的方法。 更具体地说，本发明在选择性CVD金属塞上和在电介质场上的相邻结节上施加薄层的温热PVD金属以使金属表面平坦化。 然后在平坦化的金属表面上沉积屏障。 因此，本发明提供了具有（1）无空隙的半微米选择性CVD金属通孔塞和互连件的优点，和（2）减少数量的工艺步骤而不使用CMP，以及（3）阻挡层 在金属插头上提高金属的电迁移阻力。

    Microdynamic release structure
    85.
    发明授权
    Microdynamic release structure 失效
    微动力释放结构

    公开(公告)号：US5072288A

    公开(公告)日：1991-12-10

    申请号：US313206

    申请日：1989-02-21

    申请人： Noel C. MacDonald ,  Liang-Yuh Chen ,  Zuoying L. Zhang

    发明人： Noel C. MacDonald ,  Liang-Yuh Chen ,  Zuoying L. Zhang

    IPC分类号： B81C1/00 ,  H01H1/00 ,  H02N1/00

    CPC分类号： H02N1/008 ,  B82Y15/00 ,  H01H1/0094

    摘要： A selective chemical vapor deposition (CVD) tungsten process is used to fabricate three-dimensional tungsten cantilever beams on a substrate. Two beams form micromechanical tweezers that move in three dimensions by the application of potential differences between the beams, and between the beams and the silicon substrate. A high deposition rate selective tungsten CVD process is used to fabricate beams of greater than 3 micrometers thickness in patterned, CVD silicon dioxide trenches ion-implanted with silicon. Tweezers 200 micrometers in length with a cross section of 2.7 by 2.5 micrometers will close upon application of a voltage of less than 150 volts.

    摘要翻译： 使用选择性化学气相沉积（CVD）钨工艺在衬底上制造三维钨悬臂梁。 两个光束形成微机械镊子，其通过施加光束之间以及光束和硅衬底之间的电位差在三维中移动。 使用高沉积速率选择性钨CVD工艺来制造离子注入硅的图案化CVD二氧化硅沟槽中大于3微米厚度的光束。 长度为200微米，截面为2.7×2.5微米的镊子将在施加小于150伏的电压时闭合。

    Multi-Stage Process for Producing a Material of a Battery Cell
    86.
    发明申请
    Multi-Stage Process for Producing a Material of a Battery Cell 有权

    公开(公告)号：US20230043691A1

    公开(公告)日：2023-02-09

    申请号：US17970342

    申请日：2022-10-20

    申请人： Liang-Yuh Chen

    发明人： Liang-Yuh Chen

    IPC分类号： B01J8/18 ,  C01B13/14 ,  C01B13/34 ,  B22F9/22 ,  C01G1/02 ,  B22F9/08 ,  B01J8/24 ,  B01J12/02 ,  C01B25/45 ,  H01M4/04 ,  H01M4/36

    摘要： A system and method thereof are provided for multi-stage processing of one or more precursor compounds into a battery material. The system includes a mist generator, a drying chamber, one or more gas-solid separators, and one or more in-line reaction modules comprised of one or more gas-solid feeders, one or more gas-solid separators, and one or more reactors. Various gas-solid mixtures are formed within the internal plenums of the drying chamber, the gas-solid feeders, and the reactors. In addition, heated air or gas is served as the energy source within the processing system and as the gas source for forming the gas-solid mixtures to facilitate reaction rate and uniformity of the reactions therein. Precursor compounds are continuously delivered into the processing system and processed in-line through the internal plenums of the drying chamber and the reaction modules into final reaction particles useful as a battery material.

    Method of Preparing a Material of a Battery Cell
    87.
    发明申请
    Method of Preparing a Material of a Battery Cell 审中-公开

    公开(公告)号：US20200147574A1

    公开(公告)日：2020-05-14

    申请号：US16747450

    申请日：2020-01-20

    申请人： Liang-Yuh Chen

    发明人： Liang-Yuh Chen

    IPC分类号： B01J8/18 ,  H01M4/36 ,  H01M4/04 ,  C01B25/45 ,  B01J12/02 ,  B01J8/24 ,  B22F9/08 ,  C01G1/02 ,  B22F9/22 ,  C01B13/34 ,  C01B13/14

    摘要： A continuous process for producing a material of a battery cell using a system having a mist generator, a drying chamber, one or more gas-solid separators and a reactor is provided. A mist generated from a liquid mixture of two or more metal precursor compounds in desired ratio is dried inside the drying chamber. Heated air or gas is served as the gas source for forming various gas-solid mixtures and as the energy source for reactions inside the drying chamber and the reactor. One or more gas-solid separators are used in the system to separate gas-solid mixtures from the drying chamber into solid particles mixed with the metal precursor compounds and continuously deliver the solid particles into the reactor for further reaction to obtain final solid material particles with desired crystal structure, particle size, and morphology.

    INTEGRATION OF CLUSTER MOCVD AND HVPE REACTORS WITH OTHER PROCESS CHAMBERS
    88.
    发明申请
    INTEGRATION OF CLUSTER MOCVD AND HVPE REACTORS WITH OTHER PROCESS CHAMBERS 审中-公开
    集成MOCVD和HVPE反应器与其他过程池的集成

    公开(公告)号：US20120083060A1

    公开(公告)日：2012-04-05

    申请号：US13246679

    申请日：2011-09-27

    申请人： Jie Cui ,  David Bour ,  Liang-Yuh Chen

    发明人： Jie Cui ,  David Bour ,  Liang-Yuh Chen

    IPC分类号： H01L33/04 ,  C23C16/30 ,  C30B25/02 ,  C23C16/44

    CPC分类号： H01L33/42 ,  C30B25/02 ,  C30B29/406 ,  C30B35/005 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68771 ,  H01L2933/0016

    摘要： The integration of cluster metal-organic chemical vapor deposition (MOCVD) and hydride vapor phase epitaxy (HVPE) reactors with other process chambers is described. For example, a method of fabricating a light-emitting diode (LED) structure described herein includes forming, in a first chamber of a cluster tool, a P-type group III-V material layer above a substrate. Without removing the substrate from the cluster tool a metal contact layer is formed directly on the P-type group III-V material layer in a second chamber of the cluster tool.

    摘要翻译： 描述了集群金属 - 有机化学气相沉积（MOCVD）和氢化物气相外延（HVPE）反应器与其他处理室的集成。 例如，制造本文所述的发光二极管（LED）结构的方法包括在簇工具的第一室中形成在基板上方的P型III-V族材料层。 在不从簇工具移除衬底的情况下，在簇工具的第二室中，直接在P型III-V族材料层上形成金属接触层。