Abstract:
Provided is a photoelectric conversion device for outputting an output voltage according to incident light, including photoelectric conversion unit for holding an optical charge generated by the incident light, a signal processing circuit impressed with a reference voltage for outputting the output voltage according to the incident light by applying a predetermined process to an output signal of the photoelectric conversion unit, and a switch provided between a terminal externally supplied with the reference voltage, and the signal processing circuit.
Abstract:
To provide a photoelectric conversion device with low noise at low cost. The photoelectric conversion device includes: a plurality of photoelectric conversion circuits whose output potentials change according to an amount of incident light; a plurality of reset circuits each connected to an output of each of the photoelectric conversion circuits; a plurality of amplification circuits for amplifying the output potentials of the photoelectric conversion circuits, the amplification circuits each being connected to the output of each of the photoelectric conversion circuits; a plurality of signal read circuits for reading the outputs from the amplification circuits; and a plurality of holding circuits for temporarily holding the read outputs from the amplification circuits.
Abstract:
A method of forming a linear grating is disclosed. When forming a first resist pattern covering certain surface regions of a substrate, the mask pattern position is shifted and the first resist pattern is formed such that the trench in the target region is completely filled with the first resist pattern even when an error in positioning occurs. The surface of the first resist pattern is etched, and a lower resist pattern is left to the same level as the uppermost step of the silicon substrate. On top of this, an upper resist pattern having the same pattern as the first resist pattern is formed. At this time, the mask pattern position is shifted and the exposure dose is adjusted such that one edge of the upper resist pattern is positioned on the lower resist pattern, and the other edge is positioned in a prescribed region border portion. The lower resist pattern and upper resist pattern are used as a mask to etch the silicon substrate.
Abstract:
An automatic computer configuration system is disclosed wherein a portable terminal such as a portable telephone set which has been spread widely and is usually carried by a user can be used to automatically configure a computer suitably for a particular user. The automatic computer configuration system comprises a portable terminal and a computer connected to the portable terminal. The portable terminal stores unique computer configuration information to be used for configuration of a computer specified for a particular user. Upon login by a user, the computer communicates with the portable terminal to receive the computer configuration information stored in the portable terminal and automatically configures the computer itself based on the received computer configuration information. Upon logout, the computer transmits the latest computer configuration to the portable terminal and restores the configuration using computer configuration information used before the computer configuration information is rewritten with the unique computer configuration information received from the portable terminal, or restores a default configuration using default computer configuration information.
Abstract:
A semiconductor device comprises a semiconductor substrate having a first surface and a second surface, and a first multilayer laminated structure film which is formed in the first surface of the semiconductor substrate and has a first layer having a first refractive index, a second layer formed on the first layer and having a second refractive index lower than the first refractive index, and a third layer formed on the second layer and having a third refractive index higher than the second refractive index, and in which the thicknesses of the respective layers are respectively thicknesses calculated by (2N+1)λ/(4n) where the wavelength of light used for detecting the first multilayer laminated structure film is defined as λ, the refractive indices of the respective layers are defined as n, and N is defined as 0 or a natural number.
Abstract:
A semiconductor device comprises a semiconductor substrate having a first surface and a second surface, and a first multilayer laminated structure film which is formed in the first surface of the semiconductor substrate and has a first layer having a first refractive index, a second layer formed on the first layer and having a second refractive index lower than the first refractive index, and a third layer formed on the second layer and having a third refractive index higher than the second refractive index, and in which the thicknesses of the respective layers are respectively thicknesses calculated by (2N+1)λ/(4n) where the wavelength of light used for detecting the first multilayer laminated structure film is defined as λ, the refractive indices of the respective layers are defined as n, and N is defined as 0 or a natural number.
Abstract:
The information terminal body may be designed to foldably pivot a pair of flat cases each having a display unit through a hinge which is equipped with a photographing optical system for the camera function unit of which optical axis of lens is perpendicular to an axial center of the hinge. The display units display information from communication channels and images taken in by the camera. The cases may have the display units such that the display units face outside in a folded state. At least one of the two display units may be a finder for photographers, while the other may be a finder for the subject persons. The terminal is equipped with a shutter button and a terminal operation button. The terminal operation button works also as a shutter button. The information terminal is also equipped with a viewfinder for the camera lens system.
Abstract:
A linear image sensor comprises linear image sensor ICs each having light receiving elements arranged according to a preselected resolution level for outputting output signals in accordance with an amount of light received. Switch elements interconnect output terminals of adjacent two or more of the light receiving elements for switching between the preselected resolution level of the light receiving elements to at least one other resolution level constituting a fraction of the preselected resolution level. First amplifier circuits are is connected to output terminals of the light receiving elements. Sample and hold circuits temporarily hold outputs of the first amplifier circuits. Second amplifier circuits are connected to output terminals of the sample and hold circuits. Reading switch elements read outputs of the second amplifier circuits. Scanning circuits control the reading switch elements.
Abstract:
Provided is an inexpensive photoelectric converter having a function of switching resolutions. In a photoelectric converter including plural photoelectric conversion circuits, an amplifier circuit connected to outputs of the photoelectric conversion circuits, and a reset circuit connected to outputs of part of the photoelectric conversion circuits, there is arranged a connection circuit between outputs of adjacent photoelectric conversion circuits of the photoelectric conversion circuits.
Abstract:
A method of forming a linear grating is disclosed. When forming a first resist pattern covering certain surface regions of a substrate, the mask pattern position is shifted and the first resist pattern is formed such that the trench in the target region is completely filled with the first resist pattern even when an error in positioning occurs. The surface of the first resist pattern is etched, and a lower resist pattern is left to the same level as the uppermost step of the silicon substrate. On top of this, an upper resist pattern having the same pattern as the first resist pattern is formed. At this time, the mask pattern position is shifted and the exposure dose is adjusted such that one edge of the upper resist pattern is positioned on the lower resist pattern, and the other edge is positioned in a prescribed region border portion. The lower resist pattern and upper resist pattern are used as a mask to etch the silicon substrate.