Photoelectric conversion device
    81.
    发明申请
    Photoelectric conversion device 有权
    光电转换装置

    公开(公告)号:US20080236645A1

    公开(公告)日:2008-10-02

    申请号:US12072943

    申请日:2008-02-28

    CPC classification number: H04N5/378 H04N5/357

    Abstract: Provided is a photoelectric conversion device for outputting an output voltage according to incident light, including photoelectric conversion unit for holding an optical charge generated by the incident light, a signal processing circuit impressed with a reference voltage for outputting the output voltage according to the incident light by applying a predetermined process to an output signal of the photoelectric conversion unit, and a switch provided between a terminal externally supplied with the reference voltage, and the signal processing circuit.

    Abstract translation: 提供了一种用于输出根据入射光的输出电压的光电转换装置,包括用于保持由入射光产生的光电荷的光电转换单元,施加用于根据入射光输出输出电压的基准电压的信号处理电路 通过对光电转换单元的输出信号应用预定处理,以及设置在外部提供参考电压的端子与信号处理电路之间的开关。

    Photoelectric conversion device and image sensor
    82.
    发明申请
    Photoelectric conversion device and image sensor 有权
    光电转换装置和图像传感器

    公开(公告)号:US20080006765A1

    公开(公告)日:2008-01-10

    申请号:US11891107

    申请日:2007-08-09

    Inventor: Satoshi Machida

    CPC classification number: H04N5/3745 H04N5/363 H04N5/37452

    Abstract: To provide a photoelectric conversion device with low noise at low cost. The photoelectric conversion device includes: a plurality of photoelectric conversion circuits whose output potentials change according to an amount of incident light; a plurality of reset circuits each connected to an output of each of the photoelectric conversion circuits; a plurality of amplification circuits for amplifying the output potentials of the photoelectric conversion circuits, the amplification circuits each being connected to the output of each of the photoelectric conversion circuits; a plurality of signal read circuits for reading the outputs from the amplification circuits; and a plurality of holding circuits for temporarily holding the read outputs from the amplification circuits.

    Abstract translation: 以低成本提供低噪音的光电转换装置。 光电转换装置包括:多个光电转换电路,其输出电位根据入射光量而变化; 多个复位电路,各自连接到每个光电转换电路的输出; 多个放大电路,用于放大光电转换电路的输出电位,各放大电路各自连接到每个光电转换电路的输出端; 用于读取放大电路的输出的多个信号读取电路; 以及用于暂时保持来自放大电路的读取输出的多个保持电路。

    Linear grating formation method
    83.
    发明授权
    Linear grating formation method 失效
    线性光栅形成方法

    公开(公告)号:US07312019B2

    公开(公告)日:2007-12-25

    申请号:US11066495

    申请日:2005-02-28

    CPC classification number: G02B5/1857 G03F7/0005 G03F7/0035

    Abstract: A method of forming a linear grating is disclosed. When forming a first resist pattern covering certain surface regions of a substrate, the mask pattern position is shifted and the first resist pattern is formed such that the trench in the target region is completely filled with the first resist pattern even when an error in positioning occurs. The surface of the first resist pattern is etched, and a lower resist pattern is left to the same level as the uppermost step of the silicon substrate. On top of this, an upper resist pattern having the same pattern as the first resist pattern is formed. At this time, the mask pattern position is shifted and the exposure dose is adjusted such that one edge of the upper resist pattern is positioned on the lower resist pattern, and the other edge is positioned in a prescribed region border portion. The lower resist pattern and upper resist pattern are used as a mask to etch the silicon substrate.

    Abstract translation: 公开了一种形成线性光栅的方法。 当形成覆盖基板的某些表面区域的第一抗蚀剂图案时,掩模图案位置移动,并且形成第一抗蚀剂图案,使得即使当定位错误发生时,目标区域中的沟槽也完全被第一抗蚀剂图案填充 。 蚀刻第一抗蚀剂图案的表面,并且将下抗蚀剂图案保留到与硅衬底的最上层步骤相同的水平。 此外,形成具有与第一抗蚀剂图案相同的图案的上抗蚀剂图案。 此时,掩模图案位置移动,并且调整曝光剂量使得上抗蚀剂图案的一个边缘位于下抗蚀剂图案上,另一边缘位于规定区域边界部分中。 下抗蚀剂图案和上抗蚀剂图案用作掩模以蚀刻硅衬底。

    Automatic computer configuration system, method and program making use of portable terminal
    84.
    发明授权
    Automatic computer configuration system, method and program making use of portable terminal 有权
    自动计算机配置系统,使用便携式终端的方法和程序

    公开(公告)号:US07191324B2

    公开(公告)日:2007-03-13

    申请号:US10231178

    申请日:2002-08-30

    Inventor: Satoshi Machida

    CPC classification number: H04L41/0886 H04L41/0806

    Abstract: An automatic computer configuration system is disclosed wherein a portable terminal such as a portable telephone set which has been spread widely and is usually carried by a user can be used to automatically configure a computer suitably for a particular user. The automatic computer configuration system comprises a portable terminal and a computer connected to the portable terminal. The portable terminal stores unique computer configuration information to be used for configuration of a computer specified for a particular user. Upon login by a user, the computer communicates with the portable terminal to receive the computer configuration information stored in the portable terminal and automatically configures the computer itself based on the received computer configuration information. Upon logout, the computer transmits the latest computer configuration to the portable terminal and restores the configuration using computer configuration information used before the computer configuration information is rewritten with the unique computer configuration information received from the portable terminal, or restores a default configuration using default computer configuration information.

    Abstract translation: 公开了一种自动计算机配置系统,其中诸如便携式电话机的便携式终端已被广泛传播并且通常由用户承载,可以用于为特定用户适当地自动配置计算机。 自动计算机配置系统包括便携式终端和连接到便携式终端的计算机。 便携式终端存储用于为特定用户指定的计算机的配置的唯一计算机配置信息。 在用户登录时,计算机与便携式终端通信以接收存储在便携式终端中的计算机配置信息,并且基于接收到的计算机配置信息自动配置计算机本身。 在注销时,计算机将最新的计算机配置发送到便携式终端,并且使用在从便携式终端接收到的唯一计算机配置信息重写计算机配置信息之前使用的计算机配置信息来恢复配置,或者使用默认计算机恢复默认配置 配置信息。

    Semiconductor device and semiconductor wafer
    85.
    发明授权
    Semiconductor device and semiconductor wafer 有权
    半导体器件和半导体晶片

    公开(公告)号:US07180199B2

    公开(公告)日:2007-02-20

    申请号:US11345288

    申请日:2006-02-02

    Abstract: A semiconductor device comprises a semiconductor substrate having a first surface and a second surface, and a first multilayer laminated structure film which is formed in the first surface of the semiconductor substrate and has a first layer having a first refractive index, a second layer formed on the first layer and having a second refractive index lower than the first refractive index, and a third layer formed on the second layer and having a third refractive index higher than the second refractive index, and in which the thicknesses of the respective layers are respectively thicknesses calculated by (2N+1)λ/(4n) where the wavelength of light used for detecting the first multilayer laminated structure film is defined as λ, the refractive indices of the respective layers are defined as n, and N is defined as 0 or a natural number.

    Abstract translation: 半导体器件包括具有第一表面和第二表面的半导体衬底和形成在半导体衬底的第一表面中并且具有第一折射率的第一层的第一多层叠结构膜, 所述第一层具有低于所述第一折射率的第二折射率,以及形成在所述第二层上并具有高于所述第二折射率的第三折射率的第三层,并且其中各层的厚度分别为厚度 (2N + 1)λ/(4n)计算,其中将用于检测第一多层叠结构膜的光的波长定义为λ,将各层的折射率定义为n,将N定义为0或 自然数。

    Semiconductor device and semiconductor wafer
    86.
    发明申请
    Semiconductor device and semiconductor wafer 有权
    半导体器件和半导体晶片

    公开(公告)号:US20060197237A1

    公开(公告)日:2006-09-07

    申请号:US11345288

    申请日:2006-02-02

    Abstract: A semiconductor device comprises a semiconductor substrate having a first surface and a second surface, and a first multilayer laminated structure film which is formed in the first surface of the semiconductor substrate and has a first layer having a first refractive index, a second layer formed on the first layer and having a second refractive index lower than the first refractive index, and a third layer formed on the second layer and having a third refractive index higher than the second refractive index, and in which the thicknesses of the respective layers are respectively thicknesses calculated by (2N+1)λ/(4n) where the wavelength of light used for detecting the first multilayer laminated structure film is defined as λ, the refractive indices of the respective layers are defined as n, and N is defined as 0 or a natural number.

    Abstract translation: 半导体器件包括具有第一表面和第二表面的半导体衬底和形成在半导体衬底的第一表面中并且具有第一折射率的第一层的第一多层叠结构膜, 所述第一层具有低于所述第一折射率的第二折射率,以及形成在所述第二层上并具有高于所述第二折射率的第三折射率的第三层,并且其中各层的厚度分别为厚度 (2N + 1)λ/(4n)计算,其中将用于检测第一多层叠结构膜的光的波长定义为λ,将各层的折射率定义为n,将N定义为0或 自然数。

    Linear image sensor
    88.
    发明授权
    Linear image sensor 有权
    线性图像传感器

    公开(公告)号:US07015449B2

    公开(公告)日:2006-03-21

    申请号:US10367131

    申请日:2003-02-14

    CPC classification number: H01L27/14678 H04N5/343 H04N5/347 H04N5/3692

    Abstract: A linear image sensor comprises linear image sensor ICs each having light receiving elements arranged according to a preselected resolution level for outputting output signals in accordance with an amount of light received. Switch elements interconnect output terminals of adjacent two or more of the light receiving elements for switching between the preselected resolution level of the light receiving elements to at least one other resolution level constituting a fraction of the preselected resolution level. First amplifier circuits are is connected to output terminals of the light receiving elements. Sample and hold circuits temporarily hold outputs of the first amplifier circuits. Second amplifier circuits are connected to output terminals of the sample and hold circuits. Reading switch elements read outputs of the second amplifier circuits. Scanning circuits control the reading switch elements.

    Abstract translation: 线性图像传感器包括线性图像传感器IC,其各自具有根据预选的分辨率级别布置的光接收元件,用于根据所接收的光量输出输出信号。 开关元件互连相邻的两个或更多个光接收元件的输出端子,用于在预定的光接收元件的分辨率水平之间切换至构成预选分辨率水平的一部分的至少一个其它分辨率水平。 第一放大器电路连接到光接收元件的输出端。 采样和保持电路临时保持第一放大器电路的输出。 第二放大器电路连接到采样和保持电路的输出端。 读取开关元件读取第二放大器电路的输出。 扫描电路控制读取开关元件。

    Photoelectric converter, image sensor, and signal reading circuit
    89.
    发明申请
    Photoelectric converter, image sensor, and signal reading circuit 有权
    光电转换器,图像传感器和信号读取电路

    公开(公告)号:US20060007335A1

    公开(公告)日:2006-01-12

    申请号:US11174802

    申请日:2005-07-05

    CPC classification number: H04N5/3694 H04N5/347

    Abstract: Provided is an inexpensive photoelectric converter having a function of switching resolutions. In a photoelectric converter including plural photoelectric conversion circuits, an amplifier circuit connected to outputs of the photoelectric conversion circuits, and a reset circuit connected to outputs of part of the photoelectric conversion circuits, there is arranged a connection circuit between outputs of adjacent photoelectric conversion circuits of the photoelectric conversion circuits.

    Abstract translation: 提供了具有切换分辨率功能的廉价的光电转换器。 在包括多个光电转换电路的光电转换器中,连接到光电转换电路的输出的放大器电路以及连接到部分光电转换电路的输出的复位电路,在相邻的光电转换电路的输出之间设置有一个连接电路 的光电转换电路。

    Linear grating formation method
    90.
    发明申请
    Linear grating formation method 失效
    线性光栅形成方法

    公开(公告)号:US20050196709A1

    公开(公告)日:2005-09-08

    申请号:US11066495

    申请日:2005-02-28

    CPC classification number: G02B5/1857 G03F7/0005 G03F7/0035

    Abstract: A method of forming a linear grating is disclosed. When forming a first resist pattern covering certain surface regions of a substrate, the mask pattern position is shifted and the first resist pattern is formed such that the trench in the target region is completely filled with the first resist pattern even when an error in positioning occurs. The surface of the first resist pattern is etched, and a lower resist pattern is left to the same level as the uppermost step of the silicon substrate. On top of this, an upper resist pattern having the same pattern as the first resist pattern is formed. At this time, the mask pattern position is shifted and the exposure dose is adjusted such that one edge of the upper resist pattern is positioned on the lower resist pattern, and the other edge is positioned in a prescribed region border portion. The lower resist pattern and upper resist pattern are used as a mask to etch the silicon substrate.

    Abstract translation: 公开了一种形成线性光栅的方法。 当形成覆盖基板的某些表面区域的第一抗蚀剂图案时,掩模图案位置移动,并且形成第一抗蚀剂图案,使得即使当定位错误发生时,目标区域中的沟槽也完全被第一抗蚀剂图案填充 。 蚀刻第一抗蚀剂图案的表面,并且将下抗蚀剂图案保留到与硅衬底的最上层步骤相同的水平。 此外,形成具有与第一抗蚀剂图案相同的图案的上抗蚀剂图案。 此时,掩模图案位置移动,并且调整曝光剂量使得上抗蚀剂图案的一个边缘位于下抗蚀剂图案上,另一边缘位于规定区域边界部分中。 下抗蚀剂图案和上抗蚀剂图案用作掩模以蚀刻硅衬底。

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