Thin film transistor (TFT) and flat panel display including TFT
    83.
    发明申请
    Thin film transistor (TFT) and flat panel display including TFT 审中-公开
    薄膜晶体管(TFT)和平板显示器,包括TFT

    公开(公告)号:US20060001092A1

    公开(公告)日:2006-01-05

    申请号:US11169329

    申请日:2005-06-29

    申请人: Tae-Seong Kim

    发明人: Tae-Seong Kim

    IPC分类号: H01L27/01

    摘要: A Thin Film Transistor (TFT) includes: an active layer including a channel region, a source region, and a drain region; a gate electrode insulated from the active layer and adapted to supply a signal to the channel region; and a source electrode and a drain electrode, insulated from the gate electrode, and adapted to be connected to the source and drain regions, respectively, the source and drain electrodes including a first metal layer pattern and a second metal layer pattern, the first metal layer pattern adapted to be in contact with the source and drain regions of the active layer and containing at least one metal selected from the group consisting of Cr, Cr alloys, Mo, and Mo alloys, and the second metal layer pattern being arranged on the first metal layer pattern and containing at least one metal selected from the group consisting of Ti, Ti alloys, Ta, and Ta alloys; wherein the first metal layer pattern has a thickness of 500 Å or less. The TFT has a low interconnection resistance of source/drain electrodes, prevents contamination from an active layer, has improved contact resistance with a pixel electrode, and facilitates the supply of hydrogen to the active layer to improve mobility, on-current, and threshold current. The thickness of a molybdenum alloy-based layer of source/drain electrodes is controlled to provide better uniformity.

    摘要翻译: 薄膜晶体管(TFT)包括:有源层,包括沟道区,源极区和漏极区; 与所述有源层绝缘并适于向所述沟道区域提供信号的栅电极; 以及与栅电极绝缘并且适于分别连接到源区和漏区的源极和漏电极,源电极和漏电极包括第一金属层图案和第二金属层图案,第一金属 层状图案,其适于与有源层的源极和漏极区域接触并且包含选自Cr,Cr合金,Mo和Mo合金中的至少一种金属,并且第二金属层图案被布置在 第一金属层图案并含有选自Ti,Ti合金,Ta和Ta合金中的至少一种金属; 其中所述第一金属层图案具有500或更小的厚度。 TFT具有较低的源极/漏电极的互连电阻,防止有源层的污染,改善了与像素电极的接触电阻,并有利于向有源层供应氢以提高迁移率,导通电流和阈值电流 。 控制源/漏电极的钼合金层的厚度以提供更好的均匀性。

    Thin film transistor (TFT) and flat panel display including the TFT and their methods of manufacture
    84.
    发明申请
    Thin film transistor (TFT) and flat panel display including the TFT and their methods of manufacture 审中-公开
    薄膜晶体管(TFT)和平板显示器,包括TFT及其制造方法

    公开(公告)号:US20060001091A1

    公开(公告)日:2006-01-05

    申请号:US11169301

    申请日:2005-06-29

    申请人: Tae-Seong Kim

    发明人: Tae-Seong Kim

    IPC分类号: H01L21/00 H01L27/01

    摘要: A Thin Film Transistor (TFT) reduces interconnection resistance of source/drain electrodes, prevents contamination from an active layer, reduces contact resistance between a pixel electrode and the source/drain electrodes, smoothly supplies hydrogen to the active layer and has high mobility, on-current characteristics, and threshold voltage characteristics The TFT includes an active layer having a channel region and source/drain regions, a gate electrode supplying a signal to the channel region, source/drain electrodes respectively connected to the source/drain regions and including at least one of Ti, a Ti alloy, Ta, and a Ta alloy; and an insulating layer interposed between the source/drain electrodes and the active layer and including silicon nitride.

    摘要翻译: 薄膜晶体管(TFT)降低了源极/漏极的互连电阻,防止了有源层的污染,降低了像素电极与源极/漏极之间的接触电阻,从而平稳地向活性层提供氢,并具有高迁移率 电流特性和阈值电压特性TFT包括具有沟道区域和源极/漏极区域的有源层,向沟道区域提供信号的栅极电极,分别连接到源极/漏极区域的源极/漏极电极并且包括在 Ti,Ti合金,Ta和Ta合金中的至少一种; 以及介于源/漏电极和有源层之间并包括氮化硅的绝缘层。