摘要:
A semiconductor device includes a silicon substrate, an SiO film, and a High-K film. The SiO film is first formed on the silicon substrate and then subjected to a nitridation process to obtain an SiON film from the SiO film. The nitridation process is performed such that nitrogen concentration in the SiO film decreases from an interface with the silicon substrate below and an interface with the High-K film above, and nitrogen having predetermined concentration or more is introduced in a thickness within a range of 0.2 nm to 1 nm from the interface with the silicon substrate. The SiON film is etched up to a depth to which nitrogen of the predetermined concentration or more is introduced. The High-K film is then formed on the SiON film.
摘要:
An emergency reporting apparatus includes a power supply circuit, a control circuit, and a timer. The power supply circuit generates operating power of the emergency reporting apparatus from a vehicle battery in a vehicle battery mode and from an auxiliary battery in an auxiliary battery mode. The control circuit causes the power supply circuit to switch from the vehicle battery mode to the auxiliary battery mode in response to a trigger event and starts an emergency reporting procedure using the auxiliary battery. The timer measures time elapsed since the power supply circuit switches to the auxiliary battery mode. The control circuit causes the power supply circuit to switch back to the vehicle battery mode, when the elapsed time exceeds a predetermined threshold time period.
摘要:
A developer cartridge including a frame, a developer carrying member, and an input gear member is provided. The frame includes a first side wall and a second side wall, and the first side wall and the second side wall extend in a length direction. The developer carrying member extends from the first side wall to the second side wall in a width direction perpendicular to the length direction. The developer carrying member includes a developer carrying member shaft rotatably supported by the first side wall and the second side wall, and the developer carrying member is rotatable about a first axis. The input gear member, for supplying a driving force for rotating the developer carrying member, is rotatably supported by the first side wall so as to be rotatable about a second axis. A first distance between the first axis and the second axis in the length direction is about 14.0 mm.
摘要:
A planetary gearset provided with a sun gear, a ring gear, and a carrier that rotatably retains a plurality of pinion gears arranged between the sun gear and the ring gear as elements, in which one of the elements is made a fixed element and one of the other elements is made a rotating element, and which transmits torque between that rotating element and an external member provided in a location eccentric with respect to that rotating member. The planetary gearset is constructed such that the fixed element is movably retained in the direction of a load from the transmission of torque between the rotating element and the external member, and the load from the transmission of torque between the rotating element and the external member is received by a fixed portion that rotatably retains that rotating element.
摘要:
A rotary-type fluid machine includes a compression mechanism having piston mechanisms arranged one on top of the other and a drive mechanism having a drive shaft that is configured and arranged to drive the piston mechanisms. Each of the two piston mechanisms includes a cylinder member with a cylinder chamber, a piston member housed eccentrically in the cylinder chamber such that the cylinder chamber is partitioned into first and second compression chambers. A phase difference of 90 degrees in volume change is made between the cylinder chambers of the two piston mechanisms. A movable one of the cylinder and piston has a first surface facing one of the first cylinder chambers and a second surface facing one of the second cylinder chambers, with a surface area of the first surface being equal to a surface area of the second surface.
摘要:
An optical film that includes an optical compensation layer having a refractive index anisotropy satisfying nx>ny>nz. The optical compensation layer contains a polyvinyl alcohol resin subjected to ultraviolet cross-linking with a cross-linking agent having at least two double bonds, where nx: a refractive index in a direction (a slow axis direction) in which an in-plane refractive index of the optical compensation layer reaches its maximum ny: a refractive index in a direction (a fast axis direction) that is orthogonal to the nx direction within a plane of the optical compensation layer nz: a refractive index in a thickness direction of the optical compensation layer that is orthogonal to each of the nx and ny directions.The optical film has a high retardation developability and high retardation reliability, uses a material that is inexpensive as compared to polyimide and has a wide choice of solvents.
摘要:
It is an object of the present invention to provide a liquid crystal display panel having a high contrast ratio in a front direction.A liquid crystal panel according to an embodiment of the present invention includes: a liquid crystal cell; a first polarizing plate placed on one side of the liquid crystal cell; a second polarizing plate placed on the other side of the liquid crystal cell; and a retardation layer placed between the liquid crystal cell and the second polarizing plate. A refractive index ellipsoid of the retardation layer exhibits a relationship of n≧ny>nz; and a light transmittance (T2) of the second polarizing plate is larger than a light transmittance (T1) of the first polarizing plate. Such a liquid crystal panel has a remarkably higher contrast ratio in a front direction than that of a conventional liquid crystal panel (for example, a liquid crystal panel in which the light transmittances of two polarizing plates placed on both sides of a liquid crystal cell are the same), and shows excellent display properties.
摘要:
A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region.
摘要:
A snowmobile is provided with airbag systems including airbag bodies expanding from a portion near a steering handle bar respectively, one of the airbag bodies expanding rearward of a handle bar and outward of both the ends of the handle bar, and the other airbag body expanding toward a front side of rider's knees. Another airbag system includes an airbag body expanding from an upper surface of an engine hood on the front portion of a vehicle body frame and blowing up toward a windshield of the engine hood. The respective airbag systems are detachable from the vehicle body, and hence, can be stored indoors.