公开(公告)号：US20070047668A1

公开(公告)日：2007-03-01

申请号：US11514438

申请日：2006-09-01

申请人： Sung-Kee Kim ,  Hoon Kim ,  Seong-Taek Hwang

发明人： Sung-Kee Kim ,  Hoon Kim ,  Seong-Taek Hwang

IPC分类号： H04L27/04

CPC分类号： H04B1/68 ,  H04L27/04

摘要： A single side band (SSB) modulator module using a carrier frequency includes: first and second Mach-Zender interferometers for modulating the carrier frequency and first and second signals into an SSB signal; and an arm, which is connected to both ends at which the first and second Mach-Zender interferometers are connected, splits the carrier frequency, and outputs a split portion to the first and second Mach-Zender interferometers.

摘要翻译： 使用载波频率的单边带（SSB）调制器模块包括：第一和第二马赫 - 泽德干涉仪，用于将载波频率和第一和第二信号调制成SSB信号; 并且连接到第一和第二马赫 - 泽德干涉仪连接的两端的臂分离载波频率，并将分割部分输出到第一和第二马赫 - 泽德干涉仪。

公开(公告)号：US20060192487A1

公开(公告)日：2006-08-31

申请号：US11150617

申请日：2005-06-10

申请人： Beohm-Rock Choi ,  Hoon Kim ,  Un-Cheol Sung

发明人： Beohm-Rock Choi ,  Hoon Kim ,  Un-Cheol Sung

IPC分类号： H05B33/04 ,  H05B33/10

CPC分类号： H01L51/5284 ,  H01L27/3295 ,  H01L51/5246 ,  H01L51/5256 ,  H01L51/5259

摘要： A display device includes a first substrate, light emitting elements formed over the first substrate, a second substrate facing the first substrate, and a sealing member between the first and the second substrate to combine them. The sealing member is patterned to expose the light emitting elements. The sealing member may include black colored material to improve contrast, and dehydrating material may be part of the device to absorb moisture and/or oxygen. Accordingly, the transmittance of light generated from the light emitting elements increases and the luminance of display device improves.

摘要翻译： 显示装置包括第一基板，形成在第一基板上的发光元件，面向第一基板的第二基板，以及在第一和第二基板之间的密封部件，以组合它们。 将密封构件图案化以暴露发光元件。 密封构件可以包括黑色材料以改善对比度，并且脱水材料可以是吸收水分和/或氧气的装置的一部分。 因此，从发光元件产生的光的透射率增加，并且显示装置的亮度提高。

公开(公告)号：US20060188822A1

公开(公告)日：2006-08-24

申请号：US11358074

申请日：2006-02-22

申请人： Seung-Hyuk Chang ,  I-Hun Song ,  Won-Joo Kim ,  Suk-Pil Kim ,  Hoon Kim

发明人： Seung-Hyuk Chang ,  I-Hun Song ,  Won-Joo Kim ,  Suk-Pil Kim ,  Hoon Kim

IPC分类号： G03C5/00

CPC分类号： G03F7/70233

摘要： Off-axis projection optics that includes first and second mirrors positioned off-axis and sharing a confocal point that are arranged to reduce linear astigmatism. If a distance between an object plane and the first mirror is l1, an incident angle of light coming from the object plane to the first mirror is i1, a distance between the first mirror and the confocal point is l1′, a distance between the confocal point and the second mirror is l2, an incident angle of light coming from the first mirror to the second mirror is i2, and a distance between the second mirror and an image plane is l2′, the off-axis projection optics may satisfy the following equation: l 1 ′ + l 1 l 1 ⁢ tan ⁢   ⁢ i 1 = l 2 ′ + l 2 l 2 ⁢ tan ⁢   ⁢ i 2 .

公开(公告)号：US20060145814A1

公开(公告)日：2006-07-06

申请号：US11137490

申请日：2005-05-26

申请人： Chang Son ,  Hoon Kim ,  Woon Jung ,  You Park ,  Hye Lee

发明人： Chang Son ,  Hoon Kim ,  Woon Jung ,  You Park ,  Hye Lee

IPC分类号： H04Q5/22

CPC分类号： G06K7/10079 ,  F25D29/005 ,  F25D2700/08 ,  G06K7/10316 ,  G06K7/10336 ,  G06K2017/0051

摘要： A refrigerator and a method of controlling the same. The refrigerator includes: tags attached to goods stored in a storage chamber; a reader, including a plurality of antennas having different identification distances, identifying the tags using the antennas; and a control unit detecting locations of the tags attached to goods stored in the storage chamber using the different identification distances of the antennas.

摘要翻译： 一种冰箱及其控制方法。 冰箱包括：附着在储存室中的货物的标签; 读取器，包括具有不同识别距离的多个天线，使用天线识别标签; 以及控制单元，使用天线的不同识别距离来检测附接到存储在存储室中的商品的标签的位置。

公开(公告)号：US20060145196A1

公开(公告)日：2006-07-06

申请号：US11024783

申请日：2004-12-30

申请人： Hoon Kim

发明人： Hoon Kim

IPC分类号： H01L21/00 ,  H01L29/768 ,  H01L27/148 ,  H01L31/113 ,  H01L21/8228 ,  H01L21/425

CPC分类号： H01L27/14689 ,  H01L27/12 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A method of fabricating a high-sensitivity image sensor is disclosed. The disclosed method comprises: etching a predetermined region of active silicon and a buried oxide layer by using a mask over an SOI substrate to expose an N-type silicon substrate; implanting P-type ions into the exposed N-type silicon substrate to form a P-type region; forming crossed active silicon by patterning the rest of the active silicon not etched while the active silicon is etched to expose the N-type silicon substrate; implanting P-type ions into first two predetermined regions facing each other of the crossed active silicon to form P-type regions; implanting N-type ions into second two predetermined regions facing each other except for the P-type regions of the crossed active silicon to form N-type regions; forming a gate oxide layer and a gate electrode on the crossed active silicon; and forming a connection part to connect the P-type region of the crossed active silicon to the P-type region of the silicon substrate.

摘要翻译： 公开了一种制造高灵敏度图像传感器的方法。 所公开的方法包括：通过在SOI衬底上使用掩模来蚀刻活性硅和掩埋氧化物层的预定区域以暴露N型硅衬底; 将P型离子注入暴露的N型硅衬底中以形成P型区域; 在蚀刻活性硅以暴露N型硅衬底时，通过图案化未蚀刻的其余有源硅来形成交叉活性硅; 将P型离子注入到交叉的活性硅相互面对的前两个预定区域中以形成P型区域; 将N型离子注入除了交叉活性硅的P型区域之外的彼此相对的第二两个预定区域中以形成N型区域; 在交叉的活性硅上形成栅氧化层和栅电极; 以及形成连接部分以将交叉活性硅的P型区域连接到硅衬底的P型区域。

公开(公告)号：US07061031B1

公开(公告)日：2006-06-13

申请号：US11024783

申请日：2004-12-30

申请人： Hoon Kim

发明人： Hoon Kim

IPC分类号： H01L27/148 ,  H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/12 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A method of fabricating a high-sensitivity image sensor is disclosed. The disclosed method comprises: etching a predetermined region of active silicon and a buried oxide layer by using a mask over an SOI substrate to expose an N-type silicon substrate; implanting P-type ions into the exposed N-type silicon substrate to form a P-type region; forming crossed active silicon by patterning the rest of the active silicon not etched while the active silicon is etched to expose the N-type silicon substrate; implanting P-type ions into first two predetermined regions facing each other of the crossed active silicon to form P-type regions; implanting N-type ions into second two predetermined regions facing each other except for the P-type regions of the crossed active silicon to form N-type regions; forming a gate oxide layer and a gate electrode on the crossed active silicon; and forming a connection part to connect the P-type region of the crossed active silicon to the P-type region of the silicon substrate.

摘要翻译： 公开了一种制造高灵敏度图像传感器的方法。 所公开的方法包括：通过在SOI衬底上使用掩模来蚀刻活性硅和掩埋氧化物层的预定区域以暴露N型硅衬底; 将P型离子注入暴露的N型硅衬底中以形成P型区域; 在蚀刻活性硅以暴露N型硅衬底时，通过图案化未蚀刻的其余有源硅来形成交叉活性硅; 将P型离子注入到交叉的活性硅相互面对的前两个预定区域中以形成P型区域; 将N型离子注入除了交叉活性硅的P型区域之外的彼此相对的第二两个预定区域中以形成N型区域; 在交叉的活性硅上形成栅氧化层和栅电极; 以及形成连接部分以将交叉活性硅的P型区域连接到硅衬底的P型区域。

公开(公告)号：US20060001096A1

公开(公告)日：2006-01-05

申请号：US10530416

申请日：2003-08-18

申请人： Hong Choi ,  Hoon Kim

发明人： Hong Choi ,  Hoon Kim

IPC分类号： H01L27/01

CPC分类号： H01L31/1136

摘要： The present invention relates to a photodetector using MOSFET with quantum channels and a method for making thereof. A photodetector using MOSFET with quantum channels according to the present invention comprises a quantum channel formed on an activated SOI wafer, a gate oxide film covering said quantum channel; a gate formed so as to control carrier current at said quantum channel; a source and a drain formed at both ends of said channel area; and metal layers connected with said gate, said source and said drain. Thus, the photodetector according to the present invention can obtain more excellent photocurrent characteristics compared with the existing SOI MOSFET device by forming quantum channels on the SOI MOSFET. The MOSFET with quantum channels according to the present invention can be used as a good photodetector maintaining advantages of the existing MOSFET such as ease in integration and high speed.

摘要翻译： 本发明涉及使用具有量子通道的MOSFET的光检测器及其制造方法。 根据本发明的使用具有量子通道的MOSFET的光电检测器包括形成在激活的SOI晶片上的量子通道，覆盖所述量子通道的栅极氧化膜; 形成为在所述量子通道处控制载流子的栅极; 在所述通道区域的两端形成的源极和漏极; 以及与所述栅极，所述源极和所述漏极连接的金属层。 因此，根据本发明的光电检测器可以通过在SOI MOSFET上形成量子通道而与现有的SOI MOSFET器件相比获得更优异的光电流特性。 根据本发明的具有量子通道的MOSFET可以用作保持现有MOSFET的优点的良好光电探测器，例如易于集成和高速度。

公开(公告)号：US20050105037A1

公开(公告)日：2005-05-19

申请号：US10959977

申请日：2004-10-08

申请人： Hoon Kim ,  Ki-Yong Lee ,  Jin-Wook Seo

发明人： Hoon Kim ,  Ki-Yong Lee ,  Jin-Wook Seo

IPC分类号： G02F1/136 ,  G02F1/1345 ,  G02F1/1362 ,  G09F9/30 ,  G09G3/00 ,  G09G3/36 ,  H01L21/00 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32

CPC分类号： G02F1/13624 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244

摘要： A flat panel display and method for fabricating the same are disclosed. In the flat panel display a substrate includes a pixel region having a plurality of unit pixels, and a peripheral circuit region arranged in the periphery of the pixel region. The peripheral circuit region also includes a driving circuit for driving the plurality of unit pixels. At least one circuit thin film transistor is positioned in the peripheral circuit region and includes a first semiconductor layer crystallized by a sequential lateral solidification method. At least one pixel thin film transistor is positioned in the pixel region and includes a second semiconductor layer having a channel region crystallized by one of a metal induced crystallization method or a metal induced lateral crystallization method.

摘要翻译： 公开了一种平板显示器及其制造方法。 在平板显示器中，基板包括具有多个单位像素的像素区域和布置在像素区域周边的外围电路区域。 外围电路区域还包括用于驱动多个单位像素的驱动电路。 至少一个电路薄膜晶体管位于外围电路区域中，并且包括通过顺序横向固化方法结晶的第一半导体层。 至少一个像素薄膜晶体管位于像素区域中，并且包括具有通过金属诱导结晶法或金属诱导横向结晶法中的一种结晶的沟道区的第二半导体层。

公开(公告)号：US20050047785A1

公开(公告)日：2005-03-03

申请号：US10818194

申请日：2004-04-05

申请人： Seong-Taek Hwang ,  Dae-Kwang Jung ,  Hoon Kim ,  Yun-Je Oh ,  Chang-Sup Shim

发明人： Seong-Taek Hwang ,  Dae-Kwang Jung ,  Hoon Kim ,  Yun-Je Oh ,  Chang-Sup Shim

IPC分类号： G02B6/42 ,  H04B10/00 ,  H04B10/272 ,  H04J14/00 ,  H04J14/02 ,  H04L12/28 ,  H04L12/44

CPC分类号： H04J14/0282 ,  G02B6/4246 ,  H04J14/0226 ,  H04J14/0246 ,  H04J14/025 ,  H04J2014/0253

摘要： A bi-directional WDM-PON and a method for allocating a wavelength band are disclosed. In the bi-directional WDM-PON, bi-directional transceiver modules are used to transmit optical signals of different wavelengths in the upstream and downstream directions. An L-band and an S-band are used to allocate wavelength bands to the upstream and downstream optical signals so that a wavelength band interval at which the respective wavelength bands of the upstream and downstream optical signals are spaced is set between 50 nm to 150 nm.

摘要翻译： 公开了双向WDM-PON和分配波长带的方法。 在双向WDM-PON中，双向收发模块用于在上行和下行方向传输不同波长的光信号。 使用L波段和S波段将波长带分配给上游和下游光信号，使得上游和下游光信号的相应波长带间隔开的波长带间隔设置在50nm至150nm nm。

公开(公告)号：US06753545B2

公开(公告)日：2004-06-22

申请号：US10211564

申请日：2002-08-05

申请人： Hoon Kim

发明人： Hoon Kim

IPC分类号： H01L2906

CPC分类号： H01L33/08 ,  B82Y20/00 ,  H01L33/005 ,  H01L33/06 ,  H01S5/3412 ,  Y10S438/962

摘要： A method is provided for forming quantum holes of nanometer levels. In an ion beam scanner, ions are projected from an ion gun onto a semiconductor substrate. During the projection, ions are focused into an ion beam whose focal point is controlled to determine the diameter of the ion beam, and the ion beam is accelerated. When being incident upon the semiconductor substrate, the ion beam is deflected so as to form a plurality of quantum holes. Also provided is a light-emitting device with quantum dots. Impurities are doped onto a semiconductor substrate to form a P-type semiconductor layer on which a undoped, intrinsic semiconductor is grown to a certain thickness. A plurality of quantum holes are provided for the intrinsic semiconductor layer, followed by filling materials smaller in energy band gap than the intrinsic semiconductor in annealed quantum holes through recrystallization growth. Next, an N-type semiconductor layer is overlaid on the quantum hole layer. Composition of the materials filled in the quantum holes determines the color of the light emitted from the light-emitting device. Thus, the semiconductor device is fabricated to emit light of the three primary colors or one of them. By cutting the semiconductor device, unit display panels or elements can be prepared which emit radiation at wavelengths corresponding to red, green and blue colors.

摘要翻译： 提供了一种用于形成纳米级量子空穴的方法。 在离子束扫描器中，离子从离子枪投射到半导体衬底上。 在投影期间，离子被聚焦成离子束，其焦点被控制以确定离子束的直径，并且离子束被加速。 当入射到半导体衬底上时，离子束被偏转以形成多个量子孔。 还提供了具有量子点的发光装置。 将杂质掺杂到半导体衬底上以形成其中未掺杂的本征半导体生长到一定厚度的P型半导体层。 为本征半导体层提供多个量子孔，随后通过再结晶生长在退火的量子阱中填充比本征半导体更小的能带隙的材料。 接下来，将N型半导体层重叠在量子孔层上。 填充在量子孔中的材料的组成确定从发光装置发射的光的颜色。 因此，制造半导体器件以发射三原色光或其中之一的光。 通过切割半导体器件，可以准备发射对应于红色，绿色和蓝色的波长的辐射的单元显示面板或元件。