摘要:
A method of and an apparatus for magneto-resistively detecting information in a cross-tie memory system is disclosed. The detector includes a first conductive element, which is the terminating portion of an electrically-conducting wide-narrow edged propagating drive line, and second and third conductive elements that are serially aligned along a magnetic, serrated-edged data track, which three conductive elements form two gaps therebetween. The two gaps are oriented along the data track at respective narrow portions, a first narrow portion which may support a cross-tie but which second narrow portion will not support a cross-tie. A differential sense amplifier is coupled across the two gaps using the second narrow portion as a reference segment to differentially detect the presence vel non of a cross-tie in the first narrow portion.
摘要:
A coded, magnetic module has a plurality of Wiegand effect exhibiting wires deployed parallel to one another and extending substantially across the module. These wires are supported in a laminated arrangement between two thin plastic support plies. Coding is impressed on the module by punching out an intermediate portion of each wire including the adjacent zone of the support plies. This produces a relatively physically stable coded module for subsequent use as part of a coded magnetic pulse generator.
摘要:
A magnetic structure having a high magnetic bubble mobility which has the property that magnetic bubbles can be transported in it at very high velocities while using comparatively weak driving fields, comprising a substrate having a (110) oriented deposition surface on which a layer of rare earth -- iron garnet with a substitution of Mn.sup.3+ in iron lattice sites has been grown in compression in such a manner that the layer of rare earth-iron garnet has an orthorhombic anisotropy.
摘要:
Information storage is achieved in powdered magnetoelastic materials. Such powdered magnetoelastic materials have the capability of achieving long storage times of information and also allow information to be stored at relatively high temperatures.
摘要:
An MOS RAM read/write memory system has thirty-two 1 .times. 512 bit RAM memory chips arranged in a matrix. The system pretests all data bit locations for each address prior to the entry of any data into that address, and automatically skips an address having a faulty data bit location in it. In addition, the system functions, upon reading out of data information from the memory chips, to uniquely identify any faulty MOS RAM memory chip; so that it may be removed and replaced if desired.
摘要:
A magneto-resistive domain detector for reading the stored information of a cylinder-domain transport memory having a layer-shaped detector strip made of magneto-resistive material which extends perpendicular to the cylinder-domain path, and including a domain stretcher which is adjacent to and galvanically decoupled from the detector strip.
摘要:
A magnetic bubble domain system in which magnetic bubble domains travel along propagation tracks or paths from one location to another, the complexity of the system being such that individual magnetic bubble domain paths are required to cross each other. A magnetic bubble track crossover element is included in the magnetizable overlay pattern defining the respective magnetic bubble domain propagation paths, being located at the intersection of a pair of such propagation paths so as to regulate the flow of individual bubbles from the respective propagation paths in crossing the intersection to remain undisturbed in continuing their respective courses along the same path. The crossover element is made of the same magnetizable material of the remainder of the magnetizable overlay pattern, e.g. permalloy, as provided on a layer of magnetic material of a type suitable for the propagation of magnetic bubble domains therein. An in-plane rotating magnetic field within the plane of the magnetic layer on which the magnetizable overlay pattern is disposed causes propagation of magnetic bubble domains along different tracks or paths as it revolves. The magnetic bubble domains on different tracks pass through the crossover element intersection at different drive field orientations, free from interference with each other, thereby minimizing the interaction between bubbles from different tracks.
摘要:
The temperature variation of the bubble collapse field of a class of garnet magnetic bubble layer materials is selected by control of octahedral site substitution during layer growth. This permits the growth of layers, whose temperature dependence of critical magnetic properties more closely match the temperature dependence of bias magnet materials, resulting in extended operating temperature range and/or wider operating margins (with attendant improvement in manufacturing yield). Layer growth at higher temperature results in a larger rate of change of collapse field by producing greater octahedral occupation of predominantly tetrahedrally coordinated germanium.
摘要:
An on-chip bubble domain circuit organization. One or more storage registers are connected to a propagation path whereby data in the form of magnetic bubble domains (bubbles) may be transferred into and out of the storage registers. The propagation path includes a generator for producing the initial bubbles which are expanded into any desired number of new bubbles by a unique multiple output replicator. A unique input decoder is utilized to determine to which storage register the bubbles from the replicator will be directed along the propagation path. Those bubbles not selected may be annihilated.An output decoder utilizing essentially the same decoding scheme as the input decoder, selectively receives bubbles from the storage register. A transfer and replicate switch is utilized between the storage register and output decoder to selectively transfer bubbles to the output decoder. The output decoder may collapse all of the bubbles from certain storage registers so that only the information from the selected storage register reaches the detector. The detectors in turn produce the chip output signal. External control electronics are utilized to control the selective operation of the various devices utilized in the propagation path.
摘要:
A re-programmable memory is provided for storing information data which may be used for controlling the stitch position coordinates in the operation of a sewing machine. The memory is provided by a strata of locally magnetizable material of which the magnetization may be relatively easily induced or erased. Relatively movable with respect to the strata are coding magnets which in comparison with the strata are permanent, and by which coded data may be selectively induced on the strata in the form of local magnetized areas. The stored data may be extracted from the strata either by direct mechanical linkage responsive to the local magnetized areas on the strata or by electrical output signals generated by a Hall effect device or the like in response to the local magnetized areas on the strata.