Differential magneto-resistive detector for cross-tie wall memory system
    81.
    发明授权
    Differential magneto-resistive detector for cross-tie wall memory system 失效
    用于交叉连接墙存储系统的差分磁阻检测器

    公开(公告)号:US4246647A

    公开(公告)日:1981-01-20

    申请号:US20761

    申请日:1979-02-23

    IPC分类号: G11C19/08 G11C11/02

    CPC分类号: G11C19/0866

    摘要: A method of and an apparatus for magneto-resistively detecting information in a cross-tie memory system is disclosed. The detector includes a first conductive element, which is the terminating portion of an electrically-conducting wide-narrow edged propagating drive line, and second and third conductive elements that are serially aligned along a magnetic, serrated-edged data track, which three conductive elements form two gaps therebetween. The two gaps are oriented along the data track at respective narrow portions, a first narrow portion which may support a cross-tie but which second narrow portion will not support a cross-tie. A differential sense amplifier is coupled across the two gaps using the second narrow portion as a reference segment to differentially detect the presence vel non of a cross-tie in the first narrow portion.

    摘要翻译: 公开了一种用于在交叉联系存储器系统中磁阻检测信息的方法和装置。 检测器包括第一导电元件,其是导电宽窄边缘传播驱动线的端接部分,以及沿着磁性锯齿状边缘数据轨道串联对准的第二和第三导电元件,其中三个导电元件 在它们之间形成两个间隙。 两个间隙沿着相应窄部分处的数据轨道定向,第一窄部分可以支撑交叉连接,但是第二窄部分将不支撑交叉连接。 差分读出放大器使用第二窄部分作为参考部分跨越两个间隙耦合,以差分地检测第一狭窄部分中的交叉连接的存在vel。

    Coded module for use in a magnetic pulse generator and method of
manufacture
    82.
    发明授权
    Coded module for use in a magnetic pulse generator and method of manufacture 失效
    用于磁脉冲发生器的编码模块及其制造方法

    公开(公告)号:US4187981A

    公开(公告)日:1980-02-12

    申请号:US965023

    申请日:1978-11-30

    CPC分类号: G06K19/12 G06K7/083

    摘要: A coded, magnetic module has a plurality of Wiegand effect exhibiting wires deployed parallel to one another and extending substantially across the module. These wires are supported in a laminated arrangement between two thin plastic support plies. Coding is impressed on the module by punching out an intermediate portion of each wire including the adjacent zone of the support plies. This produces a relatively physically stable coded module for subsequent use as part of a coded magnetic pulse generator.

    摘要翻译: 经编码的磁性模块具有多个Wiegand效应,其显示出彼此平行布置且基本跨越模块延伸的线。 这些电线在两个薄塑料支撑层之间以层叠的方式支撑。 通过冲出包括支撑层的相邻区域的每根线的中间部分,对模块施加编码。 这产生相对物理上稳定的编码模块,用于随后用作编码磁脉冲发生器的一部分。

    Magnetic structures
    83.
    发明授权
    Magnetic structures 失效
    磁性结构

    公开(公告)号:US4138530A

    公开(公告)日:1979-02-06

    申请号:US810105

    申请日:1977-06-27

    CPC分类号: H01F10/24 Y10S428/90

    摘要: A magnetic structure having a high magnetic bubble mobility which has the property that magnetic bubbles can be transported in it at very high velocities while using comparatively weak driving fields, comprising a substrate having a (110) oriented deposition surface on which a layer of rare earth -- iron garnet with a substitution of Mn.sup.3+ in iron lattice sites has been grown in compression in such a manner that the layer of rare earth-iron garnet has an orthorhombic anisotropy.

    摘要翻译: 具有高磁性气泡迁移率的磁性结构,其具有在使用比较弱的驱动场的同时以非常高的速度传输磁性气泡的特性,该磁性结构包括具有(110)取向沉积表面的基底,稀土 在铁晶格点取代Mn3 +的铁石榴石已经以这样的方式生长,使得稀土 - 铁石榴石层具有斜方晶各向异性。

    System for pretesting electronic memory locations and automatically
identifying faulty memory sections
    85.
    发明授权
    System for pretesting electronic memory locations and automatically identifying faulty memory sections 失效
    用于预测试电子存储器位置并自动识别故障存储器部分的系统

    公开(公告)号:US4066880A

    公开(公告)日:1978-01-03

    申请号:US671938

    申请日:1976-03-30

    申请人: Ernest J. Salley

    发明人: Ernest J. Salley

    CPC分类号: G11C29/70 G11C29/20 G11C29/44

    摘要: An MOS RAM read/write memory system has thirty-two 1 .times. 512 bit RAM memory chips arranged in a matrix. The system pretests all data bit locations for each address prior to the entry of any data into that address, and automatically skips an address having a faulty data bit location in it. In addition, the system functions, upon reading out of data information from the memory chips, to uniquely identify any faulty MOS RAM memory chip; so that it may be removed and replaced if desired.

    摘要翻译: MOS RAM读/写存储器系统具有排列成矩阵的32个1×512位RAM存储器芯片。 在将任何数据输入到该地址之前,系统会对每个地址的所有数据位位置进行预测,并自动跳过其中具有错误数据位位置的地址。 此外,该系统在从存储器芯片读取数据信息时唯一地识别任何故障的MOS RAM存储器芯片; 因此如果需要,可以将其移除和更换。

    Magneto-resistive domain detector for cylinder-domain-transport memory
    86.
    发明授权
    Magneto-resistive domain detector for cylinder-domain-transport memory 失效
    用于气缸域运输记忆体的磁阻检测器

    公开(公告)号:US4042917A

    公开(公告)日:1977-08-16

    申请号:US606477

    申请日:1975-08-21

    申请人: Arnulf Lill

    发明人: Arnulf Lill

    摘要: A magneto-resistive domain detector for reading the stored information of a cylinder-domain transport memory having a layer-shaped detector strip made of magneto-resistive material which extends perpendicular to the cylinder-domain path, and including a domain stretcher which is adjacent to and galvanically decoupled from the detector strip.

    摘要翻译: 一种磁阻域检测器,用于读取具有垂直于柱面域路径延伸的由磁阻材料制成的层状检测条的圆柱体域传输存储器的存储信息,并且包括与 并与检测器条电流去耦。

    Magnetic bubble track crossover element
    87.
    发明授权
    Magnetic bubble track crossover element 失效
    磁性气泡轨道交叉元件

    公开(公告)号:US4042916A

    公开(公告)日:1977-08-16

    申请号:US613730

    申请日:1975-09-15

    IPC分类号: G11C19/08 G11C11/02

    CPC分类号: G11C19/0883

    摘要: A magnetic bubble domain system in which magnetic bubble domains travel along propagation tracks or paths from one location to another, the complexity of the system being such that individual magnetic bubble domain paths are required to cross each other. A magnetic bubble track crossover element is included in the magnetizable overlay pattern defining the respective magnetic bubble domain propagation paths, being located at the intersection of a pair of such propagation paths so as to regulate the flow of individual bubbles from the respective propagation paths in crossing the intersection to remain undisturbed in continuing their respective courses along the same path. The crossover element is made of the same magnetizable material of the remainder of the magnetizable overlay pattern, e.g. permalloy, as provided on a layer of magnetic material of a type suitable for the propagation of magnetic bubble domains therein. An in-plane rotating magnetic field within the plane of the magnetic layer on which the magnetizable overlay pattern is disposed causes propagation of magnetic bubble domains along different tracks or paths as it revolves. The magnetic bubble domains on different tracks pass through the crossover element intersection at different drive field orientations, free from interference with each other, thereby minimizing the interaction between bubbles from different tracks.

    摘要翻译: 磁性气泡域系统,其中磁性气泡区域沿着传播轨道或从一个位置到另一个位置的路径行进,系统的复杂性使得各个气泡域路径需要彼此交叉。 磁性气泡轨道交叉元件包括在限定相应磁性气泡区域传播路径的可磁化覆盖图案中,位于一对这样的传播路径的相交处,以便调节来自各个传播路径的各个气泡在交叉路口中的流动 交叉口保持不受干扰,沿着相同的道路继续各自的课程。 交叉元件由可磁化覆盖图案的其余部分的相同的可磁化材料制成。 坡莫合金,如提供在适于在其中扩散气泡畴的类型的磁性材料层上。 在其上设置有可磁化覆盖图案的磁性层的平面内的面内旋转磁场引起磁性区域沿其旋转的不同轨道或路径的传播。 不同轨道上的磁泡区域通过不同驱动场方向的交叉元件交点,彼此无干涉,从而最小化来自不同轨道的气泡之间的相互作用。

    Magnetic bubble devices with controlled temperature characteristics
    88.
    发明授权
    Magnetic bubble devices with controlled temperature characteristics 失效
    具有控制温度特性的磁性气泡装置

    公开(公告)号:US4034358A

    公开(公告)日:1977-07-05

    申请号:US607378

    申请日:1975-08-25

    IPC分类号: G11C19/08 H01F10/24 G11C11/02

    CPC分类号: H01F10/24 G11C19/08

    摘要: The temperature variation of the bubble collapse field of a class of garnet magnetic bubble layer materials is selected by control of octahedral site substitution during layer growth. This permits the growth of layers, whose temperature dependence of critical magnetic properties more closely match the temperature dependence of bias magnet materials, resulting in extended operating temperature range and/or wider operating margins (with attendant improvement in manufacturing yield). Layer growth at higher temperature results in a larger rate of change of collapse field by producing greater octahedral occupation of predominantly tetrahedrally coordinated germanium.

    摘要翻译: 通过控制层生长期间的八面体位置取代来选择一类石榴石磁性气泡层材料的气泡塌陷场的温度变化。 这允许层的生长,其临界磁特性的温度依赖性更接近于偏置磁体材料的温度依赖性,导致扩展的工作温度范围和/或较宽的工作裕度(伴随着制造产量的提高)。 在较高温度下的层生长通过产生主要为四面体配位的锗的更大的八面体占据而导致较大的塌陷场变化率。

    Bubble domain circuit organization
    89.
    发明授权
    Bubble domain circuit organization 失效
    泡泡电路组织

    公开(公告)号:US4032905A

    公开(公告)日:1977-06-28

    申请号:US614401

    申请日:1975-09-18

    申请人: Thomas T. Chen

    发明人: Thomas T. Chen

    IPC分类号: G11C11/14 G11C19/08 G11C11/02

    CPC分类号: G11C19/0883

    摘要: An on-chip bubble domain circuit organization. One or more storage registers are connected to a propagation path whereby data in the form of magnetic bubble domains (bubbles) may be transferred into and out of the storage registers. The propagation path includes a generator for producing the initial bubbles which are expanded into any desired number of new bubbles by a unique multiple output replicator. A unique input decoder is utilized to determine to which storage register the bubbles from the replicator will be directed along the propagation path. Those bubbles not selected may be annihilated.An output decoder utilizing essentially the same decoding scheme as the input decoder, selectively receives bubbles from the storage register. A transfer and replicate switch is utilized between the storage register and output decoder to selectively transfer bubbles to the output decoder. The output decoder may collapse all of the bubbles from certain storage registers so that only the information from the selected storage register reaches the detector. The detectors in turn produce the chip output signal. External control electronics are utilized to control the selective operation of the various devices utilized in the propagation path.

    Sewing machine re-programmable memory
    90.
    发明授权
    Sewing machine re-programmable memory 失效
    缝纫机可重新编程内存

    公开(公告)号:US4014275A

    公开(公告)日:1977-03-29

    申请号:US631776

    申请日:1975-11-13

    CPC分类号: D05B19/04

    摘要: A re-programmable memory is provided for storing information data which may be used for controlling the stitch position coordinates in the operation of a sewing machine. The memory is provided by a strata of locally magnetizable material of which the magnetization may be relatively easily induced or erased. Relatively movable with respect to the strata are coding magnets which in comparison with the strata are permanent, and by which coded data may be selectively induced on the strata in the form of local magnetized areas. The stored data may be extracted from the strata either by direct mechanical linkage responsive to the local magnetized areas on the strata or by electrical output signals generated by a Hall effect device or the like in response to the local magnetized areas on the strata.

    摘要翻译: 提供了可重新编程的存储器,用于存储可用于控制缝纫机操作中的针脚位置坐标的信息数据。 存储器由局部可磁化材料的层提供,其中磁化可以相对容易地被引导或擦除。 相对于地层相对移动的是与地层相比是永久性的编码磁体,并且可以以局部磁化区域的形式在层上选择性地感应编码数据。 存储的数据可以通过响应于地层上的局部磁化区域的直接机械连接或者由响应于地层上的局部磁化区域的霍尔效应装置等产生的电输出信号从层中提取。